{"source":{"repo":"https://github.com/jwt625/eo-modulator-atlas","commit":"eb97f961165a331599e8191c62e15b5a52ba1d51","commit_date":"2026-10-20","fetched":"2026-10-25"},"devices":[{"device_id":"aihara2026-a","paper_id":"aihara2026","year":2026,"platform":"InP","eo_material":"inp_mqw","device_class":"eam","row_kind":"device","band":"o_band","wavelength_nm":1310,"length_mm":0.1,"integration":"wafer_bonded_iii_v","waveguide_platform":"inp","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":103,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":200,"max_line_rate_gbps":448,"max_net_rate_gbps":null,"modulation_format":"PAM4 at 400 Gbps (0.5 V swing, 21-tap FFE, TDECQ below 6.4 dB, ER 3.0 to 3.6 dB over four channels) and 448 Gbps (0.4 V…","length_q":"","evidence_ref":"data/evidence/aihara2026.yaml","notes":"EAM of an EA-DFB array; measurements at 55 C except EO response at 25 C. 448 Gbps was shown as an eye without a stated baud (224 GBd if PAM4 at 2 bit/symbol); max_baud_gbd holds the highest stated 200 GBd. Laser energy 0.12 pJ/bit is laser…"},{"device_id":"aimone2026-a","paper_id":"aimone2026","year":2026,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":7.5,"integration":"monolithic","waveguide_platform":"","vpi_convention":"mzm_push_pull","vpil_best":2.445,"vpil_source":"derived_dc","vpil_q":"","bw3db_ghz":67,"bw_q":"gt","bw_method":"eo_s21","max_baud_gbd":180,"max_line_rate_gbps":null,"max_net_rate_gbps":347,"modulation_format":"PAM-4 at 120-180 GBd and PAM-8 at 120-160 GBd, NGMI vs symbol rate; PAM-8 140 GBd error-free under SC-LDPC (5/6) plus B…","length_q":"","evidence_ref":"data/evidence/aimone2026.yaml","notes":"Only the I channel of the I/Q chip is characterized. Vpi 3.26 V is the modulator's own measurement, taken stand-alone in GSG fashion (implied; drive not stated explicitly), so entered as push-pull MZM Vpi; it was not measured under the dif…"},{"device_id":"akazawa2026-a","paper_id":"akazawa2026","year":2026,"platform":"Other","eo_material":"other","device_class":"phase_shifter","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":0.6,"integration":"wafer_bonded_iii_v","waveguide_platform":"soi_rib","vpi_convention":"per_arm_phase_shifter","vpil_best":0.13,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/akazawa2026.yaml","notes":"Numbers from arXiv v1 (2609.24611v1, 10 pages, 21 Sep 2026); Supplementary Sections I-IX are not in the cached source. Phase-shifting mechanism is carrier accumulation and depletion (plasma dispersion, band filling, Franz-Keldysh) in n-InG…"},{"device_id":"anjali2025-a","paper_id":"anjali2025","year":2025,"platform":"SiPh","eo_material":"silicon_plasma_dispersion","device_class":"mzm","row_kind":"design","band":"c_band","wavelength_nm":1550,"length_mm":6.45,"integration":"","waveguide_platform":"soi_rib","vpi_convention":"per_arm_phase_shifter","vpil_best":88,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":3.5,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"NRZ OOK, PRBS; eyes at 0.1 Gb/s (BER 8.4e-117) and 5 Gb/s (BER 6.2e-4, closed eye)","length_q":"approx","evidence_ref":"data/evidence/anjali2025.yaml","notes":"Design study, all simulated. Phase shifter in one arm; 0 to 5 V reverse bias; DC bias 0 V for the eyes; 10 mW input; Y-splitter/combiner loss 2.6 dB in INTERCONNECT. dn_eff 4.3e-6 (0 to 5 V). VpiL 88 V cm is the Table 2 value (Fig. 9(b) ph…"},{"device_id":"anjali2025-b","paper_id":"anjali2025","year":2025,"platform":"SiPh","eo_material":"silicon_plasma_dispersion","device_class":"mzm","row_kind":"design","band":"c_band","wavelength_nm":1550,"length_mm":6.45,"integration":"","waveguide_platform":"soi_rib","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":6.5,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"NRZ OOK, PRBS; eyes at 1 Gb/s (BER 2.14e-25) and 10 Gb/s (BER 9.81e-4, closed eye)","length_q":"approx","evidence_ref":"data/evidence/anjali2025.yaml","notes":"Design study, all simulated. Phase shifter in one arm; 0 to 5 V reverse bias; DC bias 0 V for the eyes; 10 mW input; Y-splitter/combiner loss 2.6 dB in INTERCONNECT. vpil_dc_vcm left empty: Table 2 prints 4.5 V cm but dn_eff 7.4e-6 (p.6) a…"},{"device_id":"anjali2025-c","paper_id":"anjali2025","year":2025,"platform":"SiPh","eo_material":"silicon_plasma_dispersion","device_class":"mzm","row_kind":"design","band":"c_band","wavelength_nm":1550,"length_mm":6.45,"integration":"","waveguide_platform":"soi_rib","vpi_convention":"per_arm_phase_shifter","vpil_best":3.17,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":9.5,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":20,"max_line_rate_gbps":20,"max_net_rate_gbps":null,"modulation_format":"NRZ OOK, PRBS; eyes at 1 Gb/s (BER 0) and 20 Gb/s (BER 1.32e-9, open eye)","length_q":"approx","evidence_ref":"data/evidence/anjali2025.yaml","notes":"Design study, all simulated. Phase shifter in one arm; 0 to 5 V reverse bias; DC bias 0 V for the eyes; 10 mW input; Y-splitter/combiner loss 2.6 dB in INTERCONNECT. dn_eff 1.1e-4 (0 to 5 V); the full Vpi of 5 V at 6.45 mm is stated only f…"},{"device_id":"arabjuneghani2022-a","paper_id":"arabjuneghani2022","year":2022,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":5,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"mzm_push_pull","vpil_best":2.2,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":84,"bw_q":"","bw_method":"sideband","max_baud_gbd":100,"max_line_rate_gbps":240,"max_net_rate_gbps":null,"modulation_format":"OOK 100 Gbaud; PAM-4 53.125 and 100 Gbaud; PAM-8 80 Gbaud","length_q":"","evidence_ref":"data/evidence/arabjuneghani2022.yaml","notes":"Modulator #1 (narrow gap). EO 3 dB bandwidth 84 GHz is measured (3.6 dB roll-off at 100 GHz; VNA to 67 GHz plus OSA 60-100 GHz); the roll-off reference is 'low frequencies' (Fig. 5), no frequency stated. Data demonstrations (Fig. 8) are sp…"},{"device_id":"arabjuneghani2022-b","paper_id":"arabjuneghani2022","year":2022,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":5,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"mzm_push_pull","vpil_best":3.3,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":100,"bw_q":"gt","bw_method":"sideband","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/arabjuneghani2022.yaml","notes":"Modulator #2 (wide gap, headline). Measured 3 dB bandwidth is a bound (2 dB roll-off at 100 GHz, text 'well beyond 100 GHz'), entered as 100 gt; the authors' analytical-model extrapolation gives 170 GHz (Fig. 5(b) dashed curve, prediction,…"},{"device_id":"axline2026-d1","paper_id":"axline2026","year":2026,"platform":"TFLT","eo_material":"lithium_tantalate","device_class":"resonator","row_kind":"device","band":"c_band","wavelength_nm":1560.7,"length_mm":null,"integration":"monolithic","waveguide_platform":"ltoi_rib","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/axline2026.yaml","notes":"Table B.1 (p.16), Device 1 (wafer 1): tunability cold 0.315(0.004) GHz/V = shift of the dark-resonator frequency per applied bias voltage, below 4 K (p.5), sign not stated in the text, Fig. 2(a) (Device 1, p.4) consistent with positive d(l…"},{"device_id":"axline2026-d2","paper_id":"axline2026","year":2026,"platform":"TFLT","eo_material":"lithium_tantalate","device_class":"resonator","row_kind":"device","band":"c_band","wavelength_nm":1562.74,"length_mm":null,"integration":"monolithic","waveguide_platform":"ltoi_rib","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/axline2026.yaml","notes":"Table B.1 (p.16), Device 2 (wafer 1): tunability cold 0.179(0.004) GHz/V = shift of the dark-resonator frequency per applied bias voltage, below 4 K (p.5), sign not stated or shown for this device (magnitude entered); warm (room temperatur…"},{"device_id":"axline2026-d3","paper_id":"axline2026","year":2026,"platform":"TFLT","eo_material":"lithium_tantalate","device_class":"resonator","row_kind":"device","band":"c_band","wavelength_nm":1562,"length_mm":null,"integration":"monolithic","waveguide_platform":"ltoi_rib","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/axline2026.yaml","notes":"Table B.1 (p.16), Device 3 (wafer 1): tunability cold 0.301(0.007) GHz/V = shift of the dark-resonator frequency per applied bias voltage, below 4 K (p.5), sign not stated or shown for this device (magnitude entered); warm (room temperatur…"},{"device_id":"axline2026-d4","paper_id":"axline2026","year":2026,"platform":"TFLT","eo_material":"lithium_tantalate","device_class":"resonator","row_kind":"device","band":"c_band","wavelength_nm":1560.77,"length_mm":null,"integration":"monolithic","waveguide_platform":"ltoi_rib","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/axline2026.yaml","notes":"Table B.1 (p.16), Device 4 (wafer 2): tunability cold 0.25(0.01) GHz/V = shift of the dark-resonator frequency per applied bias voltage, below 4 K (p.5), sign not stated or shown for this device (magnitude entered); warm (room temperature)…"},{"device_id":"axline2026-d5","paper_id":"axline2026","year":2026,"platform":"TFLT","eo_material":"lithium_tantalate","device_class":"resonator","row_kind":"device","band":"c_band","wavelength_nm":1560.92,"length_mm":null,"integration":"monolithic","waveguide_platform":"ltoi_rib","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/axline2026.yaml","notes":"Table B.1 (p.16), Device 5 (wafer 2): tunability cold 0.364(0.002) GHz/V = shift of the dark-resonator frequency per applied bias voltage, below 4 K (p.5), sign not stated or shown for this device (magnitude entered); warm (room temperatur…"},{"device_id":"axline2026-d6","paper_id":"axline2026","year":2026,"platform":"TFLT","eo_material":"lithium_tantalate","device_class":"resonator","row_kind":"device","band":"c_band","wavelength_nm":1560.96,"length_mm":null,"integration":"monolithic","waveguide_platform":"ltoi_rib","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/axline2026.yaml","notes":"Table B.1 (p.16), Device 6 (wafer 2): tunability cold 0.337(0.005) GHz/V = shift of the dark-resonator frequency per applied bias voltage, below 4 K (p.5), sign not stated or shown for this device (magnitude entered); warm (room temperatur…"},{"device_id":"bankwitz2026-a","paper_id":"bankwitz2026","year":2026,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":null,"integration":"foundry_native","waveguide_platform":"","vpi_convention":"mzm_push_pull","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/bankwitz2026.yaml","notes":"Two serial MZIs (push-pull traveling-wave electrodes, lift-off metal) coupled by a 2x2 directional coupler; mean splitter ratio 75/25 with 4% standard deviation; the stages cannot be driven independently. Static ER 51 dB at optimized bias…"},{"device_id":"bao2026a-a","paper_id":"bao2026a","year":2026,"platform":"SiPh","eo_material":"silicon_plasma_dispersion","device_class":"ring","row_kind":"device","band":"o_band","wavelength_nm":1310.8,"length_mm":null,"integration":"foundry_native","waveguide_platform":"","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":110,"bw_q":"gt","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":416,"max_net_rate_gbps":null,"modulation_format":"PAM4 at 256 Gb/s (TDECQ 0.16 dB, 128 GBd), 416 Gb/s (TDECQ 2.88 dB, 9-tap FFE) and 448 Gb/s (TDECQ 4.96 dB); NRZ 224 Gb…","length_q":"","evidence_ref":"data/evidence/bao2026a.yaml","notes":"EO response (Fig. 2(d)) at -2 V bias and 3 dB insertion-loss detuning. Text gives 1 dB bandwidth >110 GHz; the trace stays above -3 dB to its end near 110 GHz, so bw3db is a bound. T-coil L1 18 pH, L2 16 pH, RL 20 ohm. PAM4 416 Gb/s is 208…"},{"device_id":"bao2026a-b","paper_id":"bao2026a","year":2026,"platform":"SiPh","eo_material":"silicon_plasma_dispersion","device_class":"ring","row_kind":"device","band":"","wavelength_nm":null,"length_mm":null,"integration":"foundry_native","waveguide_platform":"","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":64,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/bao2026a.yaml","notes":"Comparison MRM without inductors: 3 dB EO bandwidth 64 GHz at -2 V bias and 3 dB insertion-loss detuning (Fig. 2(d), blue). Authors do not state whether it is the same ring as bao2026a-a, so only the bandwidth is entered."},{"device_id":"bao2026b-a","paper_id":"bao2026b","year":2026,"platform":"SiPh","eo_material":"silicon_plasma_dispersion","device_class":"ring","row_kind":"device","band":"o_band","wavelength_nm":1326.3,"length_mm":null,"integration":"monolithic","waveguide_platform":"","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":65,"bw_q":"approx","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":256,"max_net_rate_gbps":null,"modulation_format":"PAM4 256 Gb/s per channel on all 16 channels, 16 x 256 Gb/s = 4 Tb/s per fiber; TDECQ 2.68 to 3.24 dB with 9-tap FFE on…","length_q":"","evidence_ref":"data/evidence/bao2026b.yaml","notes":"Representative disk of the 16-channel array; Fig. 2(b)-(d) show one channel at -2 V. Array: Q 3200 to 3700 and about 1.14 nm (200 GHz) spacing after thermal tuning. Each channel 256 Gb/s PAM4 at 2 Vpp (128 GBd by arithmetic, not stated), T…"},{"device_id":"behzadfar2026-a","paper_id":"behzadfar2026","year":2026,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"design","band":"","wavelength_nm":null,"length_mm":10,"integration":"","waveguide_platform":"suspended_lnoi","vpi_convention":"mzm_push_pull","vpil_best":0.84,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":219,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/behzadfar2026.yaml","notes":"Simulated design (CST RF, Lumerical optical), not fabricated; wavelength not stated. Table 1 design #1: Vpi 0.84 V, 3-dB EO bandwidth 219 GHz, optical bandwidth 3.3 nm, metal-induced optical loss 0.042 dB/cm (not a total propagation loss;…"},{"device_id":"behzadfar2026-b","paper_id":"behzadfar2026","year":2026,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"design","band":"","wavelength_nm":null,"length_mm":10,"integration":"","waveguide_platform":"suspended_lnoi","vpi_convention":"mzm_push_pull","vpil_best":0.9099999999999999,"vpil_source":"derived_dc","vpil_q":"","bw3db_ghz":219,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/behzadfar2026.yaml","notes":"Simulated design (Table 1 design #2): lower group index (pitch detuning 43 nm, T-head 6.7 um, digit length 21 um) gives Vpi 0.91 V at the same 219 GHz; optical bandwidth 5.1 nm, metal-induced optical loss 0.042 dB/cm. Wavelength not stated…"},{"device_id":"behzadfar2026-c","paper_id":"behzadfar2026","year":2026,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"design","band":"","wavelength_nm":null,"length_mm":10,"integration":"","waveguide_platform":"suspended_lnoi","vpi_convention":"mzm_push_pull","vpil_best":0.64,"vpil_source":"derived_dc","vpil_q":"","bw3db_ghz":187,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/behzadfar2026.yaml","notes":"Simulated design (Table 1 design #3): narrower gap G = 4.0 um (T-head 6.7 um, digit length 24 um) lowers Vpi to 0.64 V but raises metal-induced optical loss to 0.240 dB/cm (nearly six-fold) and cuts the bandwidth to 187 GHz; optical bandwi…"},{"device_id":"behzadfar2026-d","paper_id":"behzadfar2026","year":2026,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"design","band":"","wavelength_nm":null,"length_mm":20,"integration":"","waveguide_platform":"lnoi_rib","vpi_convention":"mzm_push_pull","vpil_best":1.25,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/behzadfar2026.yaml","notes":"Simulated benchmark structure of the same co-design study (Si substrate, SiO2 bottom cladding, air top cladding, G = 5 um, ng 4.3). Vpi 0.63 V at 20 mm and VpiL 1.25 V cm are stated (p.7, p.9). Bandwidth left empty (source contradiction):…"},{"device_id":"berman2026-a","paper_id":"berman2026","year":2026,"platform":"BTO","eo_material":"barium_titanate","device_class":"ring","row_kind":"device","band":"u_band","wavelength_nm":1631.5,"length_mm":0.134,"integration":"monolithic","waveguide_platform":"bto_on_oxide_substrate","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/berman2026.yaml","notes":"Resonator family on one chip: loss from racetracks of varied straight fraction (Fig. 1(d), 100 um bend radius); Loaded Q 605k and intrinsic Q about 1.2M belong to one resonance at 1534.14 nm of the 249 um-straight racetrack of Fig. 1(c), n…"},{"device_id":"berman2026-b","paper_id":"berman2026","year":2026,"platform":"BTO","eo_material":"barium_titanate","device_class":"resonator","row_kind":"device","band":"l_band","wavelength_nm":1570.6,"length_mm":0.6,"integration":"monolithic","waveguide_platform":"bto_on_oxide_substrate","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/berman2026.yaml","notes":"1-D photonic-crystal mirrors (55 to 70 cells) on a straight waveguide. DC tuning 29.4 pm/V over a 600 um interaction length gives r_eff = 145 pm/V (same relation as racetrack). Bias applied only in the poling direction, +2 to +10 V (random…"},{"device_id":"berman2026-c","paper_id":"berman2026","year":2026,"platform":"BTO","eo_material":"barium_titanate","device_class":"other","row_kind":"device","band":"c_band","wavelength_nm":1559.661,"length_mm":null,"integration":"monolithic","waveguide_platform":"bto_on_oxide_substrate","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":11,"bw_q":"approx","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/berman2026.yaml","notes":"Small-signal S21 measured with a VNA from 100 MHz to 25 GHz at the photonic-crystal band edge, laser at 1559.661 nm, VNA power -2 dBm; trace smoothed with a LOESS fit because of contact ringing (S11 shows strong reflection). Curve axis is…"},{"device_id":"bhasker2026-a","paper_id":"bhasker2026","year":2026,"platform":"InP","eo_material":"inp_mqw","device_class":"eam","row_kind":"device","band":"o_band","wavelength_nm":1314,"length_mm":null,"integration":"monolithic","waveguide_platform":"inp","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":83,"bw_q":"approx","bw_method":"eo_s21","max_baud_gbd":160,"max_line_rate_gbps":413,"max_net_rate_gbps":null,"modulation_format":"BTB PAM4 160 GBd (320 Gb/s), RF ER 3.8 dB; PAM6 160 GBd (413 Gb/s), RF ER 3.3 dB; 15-tap FFE, 1.5 Vppd, 55 C, 130 mA la…","length_q":"","evidence_ref":"data/evidence/bhasker2026.yaml","notes":"Static (DC) ER over 30 dB at 55 C, 100 mA laser (Fig. 2). Facet power over 11.5 dBm at 0 V, 6.5 dBm under modulation. SDD11 below -5 dB to 110 GHz; simulated flip-chip curve not entered. SSD21 ripple: dips just below -3 dB near 72 GHz (abo…"},{"device_id":"boynton2020-a","paper_id":"boynton2020","year":2020,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1551.64,"length_mm":5,"integration":"bonded_heterogeneous","waveguide_platform":"lnoi_loaded_sin","vpi_convention":"mzm_push_pull","vpil_best":6.67,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":30.55,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/boynton2020.yaml","notes":"Single device. Vpi from Fig. 7(b) (13.34 V on 0.5 cm, 50 kHz sawtooth, laser 6 dBm at 1551.64 nm, quadrature bias by wavelength); the text calls 6.67 V cm the 'half-wave voltage'. Insertion loss: 13.4 dB (Table 2) is fiber-to-fiber through…"},{"device_id":"cai2025-a","paper_id":"cai2025","year":2025,"platform":"TFLT","eo_material":"lithium_tantalate","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":6.8,"integration":"bonded_heterogeneous","waveguide_platform":"ltoi_loaded_sin","vpi_convention":"mzm_push_pull","vpil_best":4.08,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":100,"bw_q":"approx","bw_method":"eo_s21","max_baud_gbd":200,"max_line_rate_gbps":400,"max_net_rate_gbps":333,"modulation_format":"PAM4 IMDD, 144-200 GBd","length_q":"","evidence_ref":"data/evidence/cai2025.yaml","notes":"Fiber-to-chip loss about 5 dB. Hybrid ring waveguide loss 14.2 dB/m is for a 2 um wide ring. 6.1 V mean Vpi, 1 Hz-100 kHz."},{"device_id":"cai2025-b","paper_id":"cai2025","year":2025,"platform":"TFLT","eo_material":"lithium_tantalate","device_class":"iq_mzm","row_kind":"device","band":"c_band","wavelength_nm":null,"length_mm":13.5,"integration":"bonded_heterogeneous","waveguide_platform":"ltoi_loaded_sin","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":204,"max_line_rate_gbps":704,"max_net_rate_gbps":581,"modulation_format":"QPSK and 16QAM, 144-204 GBd","length_q":"","evidence_ref":"data/evidence/cai2025.yaml","notes":"Two 13.5 mm MZMs with heater phase shifter; no Vpi, bandwidth or loss reported for the IQ device. Wavelength not stated. Band inferred from the IMDD setup."},{"device_id":"cai2026-a","paper_id":"cai2026","year":2026,"platform":"GeSi EAM","eo_material":"germanium_silicon_eam","device_class":"eam","row_kind":"device","band":"l_band","wavelength_nm":1600,"length_mm":0.04,"integration":"monolithic","waveguide_platform":"","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":110,"bw_q":"gt","bw_method":"eo_s21","max_baud_gbd":150,"max_line_rate_gbps":300,"max_net_rate_gbps":null,"modulation_format":"NRZ 120 Gbit/s eyes at 1590 to 1610 nm (dynamic SNR 5.44 to 5.70); PAM-4 150 GBd eye, TDECQ 4.46 dB, no offline DSP; al…","length_q":"","evidence_ref":"data/evidence/cai2026.yaml","notes":"Bandwidth: 3 dB EO bandwidth stated to exceed 110 GHz for 1 to 4 V reverse bias at -1 dBm input power; S21 down 1 dB at 110 GHz at 4 V; trace is noisy above 80 GHz; 1 V trace has a single-point spike to about -3.2 dB near 104 GHz, 2 to 4 V…"},{"device_id":"cai2026-b","paper_id":"cai2026","year":2026,"platform":"GeSi EAM","eo_material":"germanium_silicon_eam","device_class":"eam","row_kind":"device","band":"l_band","wavelength_nm":null,"length_mm":0.1,"integration":"monolithic","waveguide_platform":"","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/cai2026.yaml","notes":"Static spectra only, 1590 to 1610 nm, bias 1 to 7 V. IL remains below 6.3 dB across that window (Fig. 2(b)); maximum ER 7.5 dB. No dynamic measurement. Fab not named."},{"device_id":"celik2022-a","paper_id":"celik2022","year":2022,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"nir_below_o","wavelength_nm":780,"length_mm":3,"integration":"monolithic","waveguide_platform":"lnos_rib","vpi_convention":"mzm_push_pull","vpil_best":1.26,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":2.7,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/celik2022.yaml","notes":"Lumped RC-limited MZI: 3 dB bandwidth 2.7 GHz set by signal-to-ground capacitance, 50 ohm source and about 20 ohm Al electrode resistance; shorter devices have higher bandwidth and higher Vpi (not tabulated). Waveguide-to-electrode gap 1 u…"},{"device_id":"chen2022-a","paper_id":"chen2022","year":2022,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"","wavelength_nm":null,"length_mm":5,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"mzm_push_pull","vpil_best":2.22,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":67,"bw_q":"gt","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/chen2022.yaml","notes":"Same electrode design as the 7 and 10 mm devices. EO 3 dB bandwidth >67 GHz (not crossed). EO roll-off at 67 GHz not stated for this length; EE S12 roll-off <1.7 dB at 67 GHz. ER reported as >30 dB."},{"device_id":"chen2022-b","paper_id":"chen2022","year":2022,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"","wavelength_nm":null,"length_mm":7,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"mzm_push_pull","vpil_best":2.25,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":67,"bw_q":"gt","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/chen2022.yaml","notes":"EO 3 dB bandwidth >67 GHz (not crossed). EO roll-off at 67 GHz not stated for this length; EE S12 roll-off <2.4 dB at 67 GHz. ER reported as >25 dB."},{"device_id":"chen2022-c","paper_id":"chen2022","year":2022,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"","wavelength_nm":null,"length_mm":10,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"mzm_push_pull","vpil_best":2.2,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":67,"bw_q":"gt","bw_method":"eo_s21","max_baud_gbd":100,"max_line_rate_gbps":112,"max_net_rate_gbps":null,"modulation_format":"OOK; PAM-4","length_q":"","evidence_ref":"data/evidence/chen2022.yaml","notes":"Headline device. EO roll-off 1.4 dB at 67 GHz and 0.76 dB at 50 GHz (Table I); 3 dB bandwidth >67 GHz (not crossed). ER >20 dB. 112 Gb/s = 56 GBd PAM-4; 100 Gb/s OOK; dynamic ER >9.7 dB; BER below KP4 FEC. Vpi from 100 kHz triangular sweep…"},{"device_id":"chen2023-a","paper_id":"chen2023","year":2023,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"cl_band","wavelength_nm":null,"length_mm":null,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"resonance_tuning_derived","vpil_best":1.29,"vpil_source":"reported_dc","vpil_q":"approx","bw3db_ghz":50,"bw_q":"gt","bw_method":"eo_s21","max_baud_gbd":80,"max_line_rate_gbps":80,"max_net_rate_gbps":null,"modulation_format":"OOK, 64 and 80 Gbit/s; back-to-back BER with offline FFE (64 Gbit/s) and Volterra nonlinear equalization (80 Gbit/s); B…","length_q":"","evidence_ref":"data/evidence/chen2023.yaml","notes":"Single SL-MZM (W 0.4 um, delta 0.24 um, P 20, N 20, measured ng about 4.0). length_mm empty: about 370 um in the abstract, p.4 and p.8 (conclusions) versus 360 um in Table 1 (p.8). Vpi in volts not reported: VpiL 1.29 V cm is deduced by th…"},{"device_id":"chen2023a-air","paper_id":"chen2023a","year":2023,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":4,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"mzm_push_pull","vpil_best":2.22,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/chen2023a.yaml","notes":"Air point of the upper-cladding comparison at wSiO2 = 3.2 um (Fig. 6(d), 4 mm devices); not geometry-matched to the headline glycerol row. The matched glycerol device at the same wSiO2 reads about 1.92 V cm (Fig. 6(d)) and is not a row; co…"},{"device_id":"chen2023a-glycerol","paper_id":"chen2023a","year":2023,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":4,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"mzm_push_pull","vpil_best":1.41,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":40,"bw_q":"gt","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/chen2023a.yaml","notes":"Headline device: almost fully glycerol-covered (right end of Fig. 6(e), P about 83 percent on the plot; the text's P about 85 percent refers to a different reverse-trend point; the air curve at that P reads about 2.32 V cm, not the 2.22 V…"},{"device_id":"chen2025-a","paper_id":"chen2025","year":2025,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"resonator","row_kind":"device","band":"l_band","wavelength_nm":1568,"length_mm":0.064,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":110,"bw_q":"gt","bw_method":"eo_s21","max_baud_gbd":220,"max_line_rate_gbps":220,"max_net_rate_gbps":null,"modulation_format":"NRZ eyes 180, 190, 220 Gb/s; PAM4 180, 200, 220 Gb/s; PAM6 128, 154 Gb/s; PAM8 150 Gb/s; BER of NRZ 50, 70, 100 Gb/s ag…","length_q":"","evidence_ref":"data/evidence/chen2025.yaml","notes":"Headline device: 70 unit cells per side, 3.5 um electrode gap (Fig. 3(f),(g); text p.5), 64 um electrode length (Fig. 3(b) dimension; photonic crystal 2 x 70 x 454 nm = 63.6 um; footprint 57.6 um^2 = 64 um x 0.9 um). Resonance near 1568 nm…"},{"device_id":"chen2025-b","paper_id":"chen2025","year":2025,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"resonator","row_kind":"device","band":"l_band","wavelength_nm":1569.2,"length_mm":null,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/chen2025.yaml","notes":"Same-chip sibling with 70 unit cells and a 3.7 um electrode gap (p.4-5 Fig. 3(e); supplement Fig. S1, S2). Tuning efficiency from the Fig. S2(d) label (Fig. S2(d) uses the reversed voltage axis and the resonance blue-shifts for positive vo…"},{"device_id":"chen2025-c","paper_id":"chen2025","year":2025,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"resonator","row_kind":"device","band":"l_band","wavelength_nm":1569.3,"length_mm":null,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/chen2025.yaml","notes":"Same-chip sibling with 70 unit cells and a 4.0 um electrode gap (p.4-5 Fig. 3(e); supplement Fig. S1, S2). Tuning efficiency from the Fig. S2(f) label (Fig. S2(f) uses the reversed voltage axis and the resonance blue-shifts for positive vo…"},{"device_id":"chen2025-d","paper_id":"chen2025","year":2025,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"resonator","row_kind":"device","band":"l_band","wavelength_nm":1569.3,"length_mm":null,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/chen2025.yaml","notes":"Same-chip sibling with 70 unit cells and a 4.2 um electrode gap (p.4-5 Fig. 3(e); supplement Fig. S1, S2). Tuning efficiency from the Fig. S2(h) label (Fig. S2(h) uses the reversed voltage axis and the resonance blue-shifts for positive vo…"},{"device_id":"chen2025-e","paper_id":"chen2025","year":2025,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"resonator","row_kind":"device","band":"l_band","wavelength_nm":1568.2,"length_mm":null,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/chen2025.yaml","notes":"Same-chip sibling with 70 unit cells and a 4.5 um electrode gap (p.4-5 Fig. 3(e); supplement Fig. S1, S2). Tuning efficiency from the Fig. S2(j) label (Fig. S2(j) uses the reversed voltage axis and the resonance blue-shifts for positive vo…"},{"device_id":"chen2025-f","paper_id":"chen2025","year":2025,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"resonator","row_kind":"device","band":"l_band","wavelength_nm":1566.7,"length_mm":null,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/chen2025.yaml","notes":"Same-chip sibling with 50 unit cells per side and 3.5 um electrode gap (p.4-5, Fig. 3(d)); tuning efficiency from the p.5 text (sign not stated; polarity convention undefined, value is the magnitude). Q 1118 is the stated end of the 1118 t…"},{"device_id":"chen2025-g","paper_id":"chen2025","year":2025,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"resonator","row_kind":"device","band":"l_band","wavelength_nm":1567.5,"length_mm":null,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/chen2025.yaml","notes":"Same-chip sibling with 60 unit cells per side and 3.5 um electrode gap (p.4-5, Fig. 3(d)); tuning efficiency from the p.5 text (sign not stated; polarity convention undefined, value is the magnitude). Q for this N is not individually state…"},{"device_id":"chen2025-h","paper_id":"chen2025","year":2025,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"resonator","row_kind":"device","band":"l_band","wavelength_nm":1569.4,"length_mm":null,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/chen2025.yaml","notes":"Same-chip sibling with 80 unit cells per side and 3.5 um electrode gap (p.4-5, Fig. 3(d)); tuning efficiency from the p.5 text (sign not stated; polarity convention undefined, value is the magnitude). Q for this N is not individually state…"},{"device_id":"chen2025-i","paper_id":"chen2025","year":2025,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"resonator","row_kind":"device","band":"l_band","wavelength_nm":1568.4,"length_mm":null,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/chen2025.yaml","notes":"Same-chip sibling with 90 unit cells per side and 3.5 um electrode gap (p.4-5, Fig. 3(d)); tuning efficiency from the p.5 text (sign not stated; polarity convention undefined, value is the magnitude). Q 3848 is the stated end of the 1118 t…"},{"device_id":"chen2026-a","paper_id":"chen2026","year":2026,"platform":"TFLT","eo_material":"lithium_tantalate","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":7.5,"integration":"monolithic","waveguide_platform":"ltoi_rib","vpi_convention":"mzm_push_pull","vpil_best":2.4,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/chen2026.yaml","notes":"Drive and Vpi convention not stated by the authors: push-pull inferred from one waveguide in each gap of the G-S-G electrode (Fig. 1(a) inset), basis derived. Vpi 3.2 V from a 5 kHz, 8 V peak-to-peak triangle, constant from 50 Hz to 500 kH…"},{"device_id":"chiang2025-a","paper_id":"chiang2025","year":2025,"platform":"Other","eo_material":"ferroelectric_nematic_lc","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":null,"length_mm":1,"integration":"polymer_backfill","waveguide_platform":"soi_slot","vpi_convention":"unspecified","vpil_best":0.3,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":51,"max_line_rate_gbps":102,"max_net_rate_gbps":null,"modulation_format":"PAM-4","length_q":"","evidence_ref":"data/evidence/chiang2025.yaml","notes":"Numbers from arXiv v1 (2507.14724v1, 4 pages; page-1 footer reads (c)2024 The Author(s), venue not stated in the source). Vpi 3 V and VpiL 0.3 V*cm are AC values at 25 MHz (entered in vpi_rf_*), not DC; convention not stated by the authors…"},{"device_id":"churaev2023-a","paper_id":"churaev2023","year":2021,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"phase_shifter","row_kind":"device","band":"","wavelength_nm":null,"length_mm":4,"integration":"bonded_heterogeneous","waveguide_platform":"lnoi_loaded_sin","vpi_convention":"per_arm_phase_shifter","vpil_best":8.8,"vpil_source":"reported_dc","vpil_q":"approx","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/churaev2023.yaml","notes":"Single-arm phase modulator measured in a Mach-Zehnder interferometer; 'single-arm' per Conclusion p.6. LN optical mode participation 38 percent (Fig. 1h legend). Authors' FEM for this geometry gives VpiL = 8.2 V cm (Fig. 1i label; simulate…"},{"device_id":"churaev2023-b","paper_id":"churaev2023","year":2021,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"phase_shifter","row_kind":"device","band":"","wavelength_nm":null,"length_mm":4,"integration":"bonded_heterogeneous","waveguide_platform":"lnoi_loaded_sin","vpi_convention":"per_arm_phase_shifter","vpil_best":5.6,"vpil_source":"reported_dc","vpil_q":"approx","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/churaev2023.yaml","notes":"Higher-confinement variant: narrower Si3N4 waveguide and 5.5 um electrode gap (Fig. 1h red curve, 52 percent participation). Vpi is not stated in text; the curve minimum lies near 14-15 V on Fig. 1h and 5.6 V cm x 0.4 cm = 14 V (not entere…"},{"device_id":"churaev2023-c","paper_id":"churaev2023","year":2021,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"ring","row_kind":"device","band":"c_band","wavelength_nm":1552,"length_mm":null,"integration":"bonded_heterogeneous","waveguide_platform":"lnoi_loaded_sin","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/churaev2023.yaml","notes":"EO comb demonstration: 40 dBm microwave at 20.97 GHz across integrated electrodes (6 um gap), phase-modulation amplitude about 0.14 pi, about 60 sidebands in a 25 dB span (Fig. 4c; p.5). Intrinsic Q up to 4.5e6 (Fig. 2g, p.3); loaded Q, ri…"},{"device_id":"datta2020-a","paper_id":"datta2020","year":2019,"platform":"Graphene/2D","eo_material":"graphene_2d","device_class":"phase_shifter","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":0.5,"integration":"transferred_2d","waveguide_platform":"sin","vpi_convention":"resonance_tuning_derived","vpil_best":1.33,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":0.3,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/datta2020.yaml","notes":"Unbalanced MZI (200 um arm imbalance, fringe visibility 0.98) with the voltage applied to the capacitor on the longer arm only. VpiL quasi-static from DC-biased spectra (frequency not stated); voltage swing -8 to 9 V, charge neutrality nea…"},{"device_id":"datta2020-b","paper_id":"datta2020","year":2019,"platform":"Graphene/2D","eo_material":"graphene_2d","device_class":"phase_shifter","row_kind":"device","band":"","wavelength_nm":null,"length_mm":0.5,"integration":"transferred_2d","waveguide_platform":"sin","vpi_convention":"resonance_tuning_derived","vpil_best":0.8,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/datta2020.yaml","notes":"SU-8 high-index cladding raises the WS2 mode overlap from 0.016 to 0.03 percent and Delta n_eff from 7.1e-4 to 1.35e-3 (p.7), cutting VpiL from 1.33 to 0.8 V cm. No bandwidth is attributed to this device in the body: Fig. 3(d) is the uncla…"},{"device_id":"datta2020-c","paper_id":"datta2020","year":2019,"platform":"Graphene/2D","eo_material":"graphene_2d","device_class":"phase_shifter","row_kind":"device","band":"","wavelength_nm":null,"length_mm":null,"integration":"transferred_2d","waveguide_platform":"sin","vpi_convention":"resonance_tuning_derived","vpil_best":1.7,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/datta2020.yaml","notes":"Monolayer MoS2 shows about half the index change of WS2 (Fig. 4(c)); mode overlap 0.054 percent, Delta n_eff 6.4e-4 at 8 V (p.8, p.10). Capacitor length and wavelength are not stated for this device (the 500 um statement is for the WS2 dev…"},{"device_id":"datta2024-a","paper_id":"datta2024","year":2022,"platform":"Graphene/2D","eo_material":"graphene_2d","device_class":"ring","row_kind":"device","band":"c_band","wavelength_nm":1538.71,"length_mm":0.04,"integration":"transferred_2d","waveguide_platform":"sin","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/datta2024.yaml","notes":"Phase change 0.46 +/- 0.05 pi with Delta T_ring 4.37 +/- 0.70 dB over a 6 to 18 V swing (p.4, Fig. 2(a)); cross-checked with a fiber MZI (p.6). Ring-bus gap 350 nm, ring under-coupled at 0 V, critically coupled at 8 V (Fig. 2 caption gives…"},{"device_id":"datta2024-b","paper_id":"datta2024","year":2022,"platform":"Graphene/2D","eo_material":"graphene_2d","device_class":"ring","row_kind":"device","band":"l_band","wavelength_nm":1569.6,"length_mm":0.04,"integration":"transferred_2d","waveguide_platform":"sin","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":14.9,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/datta2024.yaml","notes":"Same physical device I as row a but a different ring resonance (1569.6 nm versus 1538.71 nm). Bias 8 V, RF swing 10 dBm; optical bandwidth 15.8 GHz is above the 14.9 GHz EO bandwidth, which the authors attribute to graphene and WSe2 contac…"},{"device_id":"datta2024-c","paper_id":"datta2024","year":2022,"platform":"Graphene/2D","eo_material":"graphene_2d","device_class":"ring","row_kind":"device","band":"u_band","wavelength_nm":1646.22,"length_mm":0.025,"integration":"transferred_2d","waveguide_platform":"sin","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/datta2024.yaml","notes":"Headline device of the abstract. V_pi/2 L_pi/2 = 0.045 V cm is a half-wave product, not entered. IL 2.96 +/- 0.34 dB (Delta T 1.73 +/- 0.20 dB, 0.50 +/- 0.05 pi, p.5-6, Fig. 2(a)), scope undefined. IL_pi/2 = 4.7 dB (abstract, p.7, Fig. 4)…"},{"device_id":"deng2026-a","paper_id":"deng2026","year":2026,"platform":"BTO","eo_material":"barium_titanate","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":1,"integration":"monolithic","waveguide_platform":"bto_on_oxide_substrate","vpi_convention":"mzm_single_arm","vpil_best":0.7,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":12,"bw_q":"approx","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/deng2026.yaml","notes":"MZI with two 50:50 Y-branches and 1 mm arms; one arm carries the GSG coplanar traveling-wave electrode for RF plus DC bias, the other a GS capacitive electrode with low DC bias for operating-point tuning. Vpi 7 V and Vpi*L 0.7 V*cm (= 7 V…"},{"device_id":"deng2026a-a","paper_id":"deng2026a","year":2026,"platform":"SiPh","eo_material":"silicon_plasma_dispersion","device_class":"mzm","row_kind":"device","band":"o_band","wavelength_nm":null,"length_mm":2.5,"integration":"foundry_native","waveguide_platform":"soi_rib","vpi_convention":"unspecified","vpil_best":1.5,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":40.8,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":112,"max_line_rate_gbps":336,"max_net_rate_gbps":null,"modulation_format":"112 GBaud eyes: NRZ 112 Gb/s (ER 4.05 dB), PAM4 224 Gb/s (ER 3.38 dB, RLM 94.4%, TDECQ 1.25 dB), PAM6 280 Gb/s, PAM8 33…","length_q":"","evidence_ref":"data/evidence/deng2026a.yaml","notes":"40.8 GHz labels the plotted -3 V trace (also one wafer-map die); text calls it the median but the inset median is 38.0 GHz (max 43.0, bias unlabeled). VpiL 1.5 V cm is stated as modulation efficiency; bias, DC/RF and definition not given.…"},{"device_id":"deng2026a-b","paper_id":"deng2026a","year":2026,"platform":"SiPh","eo_material":"silicon_plasma_dispersion","device_class":"mzm","row_kind":"device","band":"o_band","wavelength_nm":null,"length_mm":2.5,"integration":"foundry_native","waveguide_platform":"soi_rib","vpi_convention":"unspecified","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":52.9,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/deng2026a.yaml","notes":"Same MZM as deng2026a-a at -6 V reverse bias: EO bandwidth label 52.9 GHz (Fig. 2(d), blue; text calls it the median). Only the bandwidth is bias-specific and entered; no system demonstration at this bias."},{"device_id":"derose2012-a","paper_id":"derose2012","year":2012,"platform":"SiPh","eo_material":"silicon_plasma_dispersion","device_class":"mzm","row_kind":"device","band":"","wavelength_nm":null,"length_mm":0.5,"integration":"monolithic","waveguide_platform":"soi_rib","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":24,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/derose2012.yaml","notes":"Effective active length 0.5 mm. Fig. 2(a) overlays fit curves on the measured traces; the paper does not say whether 24 GHz is read from trace or fit. S11 better than -20 dB to 30 GHz (Fig. 2(b)). Unloaded slot line 95 ohm, n_RF 2.3; desig…"},{"device_id":"derose2012-b","paper_id":"derose2012","year":2012,"platform":"SiPh","eo_material":"silicon_plasma_dispersion","device_class":"mzm","row_kind":"device","band":"","wavelength_nm":null,"length_mm":1.5,"integration":"monolithic","waveguide_platform":"soi_rib","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":14,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/derose2012.yaml","notes":"Effective active length 1.5 mm; same design as derose2012-a. Fig. 2(a) shows fit curves over the measured trace; source of the 14 GHz value (trace or fit) not stated. S11 better than -20 dB to 30 GHz (Fig. 2(b)). Not reported: Vpi, inserti…"},{"device_id":"derose2012-c","paper_id":"derose2012","year":2012,"platform":"SiPh","eo_material":"silicon_plasma_dispersion","device_class":"mzm","row_kind":"device","band":"","wavelength_nm":null,"length_mm":2,"integration":"monolithic","waveguide_platform":"soi_rib","vpi_convention":"unspecified","vpil_best":0.7,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/derose2012.yaml","notes":"Vpi*L 0.7 V cm measured on a 2 mm modulator (abstract, p.2, conclusions). Paper does not state DC versus RF, bias, or per-arm versus MZM-level; vpil_dc_vcm assumes the usual DC phase-shift measurement. Vpi and bandwidth not reported for th…"},{"device_id":"didier2026-a","paper_id":"didier2026","year":2026,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"mid_ir","wavelength_nm":4000,"length_mm":8,"integration":"monolithic","waveguide_platform":"lnos_rib","vpi_convention":"mzm_push_pull","vpil_best":22.4,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":20,"bw_q":"gt","bw_method":"eo_s21","max_baud_gbd":10,"max_line_rate_gbps":10,"max_net_rate_gbps":null,"modulation_format":"two-level PRBS 2^15 at 10 Gbit/s over 0.5 m free space; -log10(BER) = 4.3","length_q":"","evidence_ref":"data/evidence/didier2026.yaml","notes":"Headline device. On-chip loss is an upper bound deduced by the authors. Comb: 70 GHz span at 7 GHz drive. Modulated output power 350 uW."},{"device_id":"didier2026-b","paper_id":"didier2026","year":2026,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"mid_ir","wavelength_nm":null,"length_mm":6.6,"integration":"monolithic","waveguide_platform":"lnos_rib","vpi_convention":"mzm_push_pull","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":20,"bw_q":"gt","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/didier2026.yaml","notes":"Only length and S21 reported for this device; electrode gap, Vpi and wavelength not stated. Response about -2 dB at 20 GHz."},{"device_id":"didier2026-c","paper_id":"didier2026","year":2026,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"mid_ir","wavelength_nm":null,"length_mm":4,"integration":"monolithic","waveguide_platform":"lnos_rib","vpi_convention":"mzm_push_pull","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":16,"bw_q":"approx","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/didier2026.yaml","notes":"Text says up to 16 GHz, caption 15 GHz, no length attributed; authors blame 50 ohm impedance mismatch."},{"device_id":"didier2026-d","paper_id":"didier2026","year":2026,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"mid_ir","wavelength_nm":null,"length_mm":5,"integration":"monolithic","waveguide_platform":"lnos_rib","vpi_convention":"mzm_push_pull","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":14,"bw_q":"approx","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/didier2026.yaml","notes":"Crossing read from Fig. 4(a); text states up to 16 GHz and caption 15 GHz without attributing a length."},{"device_id":"didier2026-e","paper_id":"didier2026","year":2026,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"mid_ir","wavelength_nm":4300,"length_mm":null,"integration":"monolithic","waveguide_platform":"lnos_rib","vpi_convention":"mzm_push_pull","vpil_best":25,"vpil_source":"reported_dc","vpil_q":"approx","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/didier2026.yaml","notes":"Length of the swept device not stated. Insertion loss text is not tied to a named device. DFB QCL at 4.3 um. 4.0 um teal marker (about 22.5) matches -a; same device likely but not stated."},{"device_id":"didier2026-f","paper_id":"didier2026","year":2026,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"mid_ir","wavelength_nm":4500,"length_mm":null,"integration":"monolithic","waveguide_platform":"lnos_rib","vpi_convention":"mzm_push_pull","vpil_best":28,"vpil_source":"reported_dc","vpil_q":"approx","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/didier2026.yaml","notes":"Length of the swept device not stated. Facet-coupling loss not evaluated at 4.5 um, so no on-chip value. 4.0 um teal marker (about 22.5) matches -a; same device likely but not stated."},{"device_id":"didier2026-g","paper_id":"didier2026","year":2026,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"mid_ir","wavelength_nm":4000,"length_mm":null,"integration":"monolithic","waveguide_platform":"lnos_rib","vpi_convention":"mzm_push_pull","vpil_best":18.4,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/didier2026.yaml","notes":"Smallest-gap 1.5 um-film device; length and Vpi not stated. Paper: the lowest-Vpi modulator had about 150 uW output (electrode misalignment); likely, not stated, this device. Fig. 3(d) G = 10 um marker reads about 18.5 at 3.95 um and 21 at…"},{"device_id":"didier2026-h","paper_id":"didier2026","year":2026,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"mid_ir","wavelength_nm":4000,"length_mm":null,"integration":"monolithic","waveguide_platform":"lnos_rib","vpi_convention":"mzm_push_pull","vpil_best":31.4,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/didier2026.yaml","notes":"Minimum VpiL of the 0.9 um film, assigned to the 13.2 um gap by the Fig. 3(c) marker position; length and Vpi not stated."},{"device_id":"dong2026-a","paper_id":"dong2026","year":2026,"platform":"SiPh","eo_material":"silicon_plasma_dispersion","device_class":"mzm","row_kind":"device","band":"","wavelength_nm":null,"length_mm":null,"integration":"monolithic","waveguide_platform":"","vpi_convention":"unspecified","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":70,"bw_q":"gt","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":420,"max_net_rate_gbps":null,"modulation_format":"PAM4 optical back-to-back at 300, 360 and 420 Gb/s; 15-tap FFE at 300 Gb/s, 31-tap FFE at 360 and 420 Gb/s; link BER 3e…","length_q":"","evidence_ref":"data/evidence/dong2026.yaml","notes":"Differential-drive device with target differential impedance 75 ohm (design target, z0_ohm left empty). Vpi is the authors' effective Vpi = VpiL / phase-shifter length, approx 7 V; neither VpiL nor length is stated, and DC versus RF is not…"},{"device_id":"eltes2020-a","paper_id":"eltes2020","year":2020,"platform":"BTO","eo_material":"barium_titanate","device_class":"ring","row_kind":"device","band":"","wavelength_nm":null,"length_mm":null,"integration":"bonded_heterogeneous","waveguide_platform":"bto_on_sin","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/eltes2020.yaml","notes":"Material-characterization device: the Pockels coefficient is extracted from resonance shifts of SiN-BTO racetracks (bend radius 50 um, straights 75 um, coupling gap 0.53 um). The paper says the SiN design was used to study the pure nonline…"},{"device_id":"eltes2020-b","paper_id":"eltes2020","year":2020,"platform":"BTO","eo_material":"barium_titanate","device_class":"ring","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":null,"integration":"bonded_heterogeneous","waveguide_platform":"bto_on_si","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"link_eoe","max_baud_gbd":null,"max_line_rate_gbps":20,"max_net_rate_gbps":null,"modulation_format":"binary PRBS 2^7-1 bit stream (format not named); eyes at 10 and 20 Gb/s","length_q":"","evidence_ref":"data/evidence/eltes2020.yaml","notes":"Cryogenic Si-BTO ring modulator, data run with PRBS 2^7-1, eyes at 10 and 20 Gb/s with 1.7 Vpp. Bandwidth: the supplement Fig. S9 plots the EOE |S21| (dB) and its dashed cut-off marker sits at -6 dB (EOE; the paper does not call it a 3 dB…"},{"device_id":"eltes2020-c","paper_id":"eltes2020","year":2020,"platform":"BTO","eo_material":"barium_titanate","device_class":"mzm","row_kind":"device","band":"","wavelength_nm":null,"length_mm":0.5,"integration":"bonded_heterogeneous","waveguide_platform":"bto_on_sin","vpi_convention":"mzm_single_arm","vpil_best":5,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/eltes2020.yaml","notes":"Low-power switch, not a high-speed modulator. Switching between the two output ports with E from -6 to +6 MV/m (Fig. 4b); text: 6 MV/m, about 50 V (about 54 V at 9 um gap); SI Note 7: +/-50 V applied for a full pi shift. VpiL 5 V cm at 0.5…"},{"device_id":"eltes2020-d","paper_id":"eltes2020","year":2020,"platform":"BTO","eo_material":"barium_titanate","device_class":"ring","row_kind":"device","band":"","wavelength_nm":null,"length_mm":null,"integration":"bonded_heterogeneous","waveguide_platform":"","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":30,"bw_q":"gt","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/eltes2020.yaml","notes":"The paper does not say which waveguide design (SiN or Si) this ring uses, nor its electrode geometry; entered as a bandwidth operating point only, with the calibrated EO S21 (VNA 50 GHz, photodetector response compensated) flat within abou…"},{"device_id":"eltes2023-a","paper_id":"eltes2023","year":2023,"platform":"BTO","eo_material":"barium_titanate","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":2,"integration":"foundry_native","waveguide_platform":"","vpi_convention":"mzm_push_pull","vpil_best":0.72,"vpil_source":"derived_dc","vpil_q":"lt","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":128,"max_line_rate_gbps":null,"max_net_rate_gbps":262,"modulation_format":"OOK 128 GBd (net 117 Gb/s, KP4-FEC) and PAM-4 106 GBd (net 200 Gb/s, HD-FEC) driver-less; PAM-4 112 GBd (net 212 Gb/s)…","length_q":"lt","evidence_ref":"data/evidence/eltes2023.yaml","notes":"Stand-alone BTO MZMs (no SiPh components) with BTO DC tuner (below 100 uW, Fig. 1d) and on-chip 50 ohm termination; HSPS \"single-ended drive scheme enabling standard push-pull driving\". Table 1 operating point (106 GBd PAM-4, 830 mVpp, lin…"},{"device_id":"eltes2023-b","paper_id":"eltes2023","year":2023,"platform":"BTO","eo_material":"barium_titanate","device_class":"phase_shifter","row_kind":"device","band":"","wavelength_nm":null,"length_mm":1.5,"integration":"","waveguide_platform":"","vpi_convention":"unspecified","vpil_best":0.48,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/eltes2023.yaml","notes":"Vpi test structure of Fig. 1c: 1.5 mm high-speed phase shifter measured at 10 MHz by fitting average transmission versus modulation voltage with Bessel functions. Fig. 1c is an average-transmission (MZM) measurement versus Vpp, but the arm…"},{"device_id":"falcone2026-a","paper_id":"falcone2026","year":2026,"platform":"BTO","eo_material":"barium_titanate","device_class":"phase_shifter","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":null,"integration":"monolithic","waveguide_platform":"bto_on_oxide_substrate","vpi_convention":"per_arm_phase_shifter","vpil_best":35,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/falcone2026.yaml","notes":"Single-arm BTO waveguide, lengths 100 to 2000 um (s-bend plus straight, electrodes along the full length); VpiL from several lengths, so length_mm is empty. Fig. 4(e) trace is a 2000 um device. Measured at 100 kHz, triangular 360 Vpp, afte…"},{"device_id":"falcone2026-b","paper_id":"falcone2026","year":2026,"platform":"BTO","eo_material":"barium_titanate","device_class":"phase_shifter","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":null,"integration":"monolithic","waveguide_platform":"bto_on_oxide_substrate","vpi_convention":"per_arm_phase_shifter","vpil_best":52,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/falcone2026.yaml","notes":"Same design as the 700 C device with a higher final anneal; lengths 100 to 2000 um, length_mm empty. Poling field about 190 kV/cm (almost three times the 700 C value); the poling voltage is not stated and Supplementary Fig. S5 is not in th…"},{"device_id":"feng2022-a","paper_id":"feng2022","year":2022,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"l_band","wavelength_nm":1594.9,"length_mm":null,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"analog two-tone IMD3 test, tones 10 MHz apart; SFDR 120.04 dB Hz^(4/5) at 1 GHz and 114.54 dB Hz^(4/5) at 5 GHz","length_q":"","evidence_ref":"data/evidence/feng2022.yaml","notes":"VERSION arXiv v1. Racetrack with 50 GHz FSR coupled to one arm of an unbalanced MZI (50 um arm difference, MZI FSR 20 nm) through a deep over-coupled 2x2 MMI (kappa about 0.96, |kappa|^2 about 92 percent); modulation electrodes (two ground…"},{"device_id":"feng2022-b","paper_id":"feng2022","year":2022,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"","wavelength_nm":null,"length_mm":null,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"analog two-tone IMD3 test; SFDR 102.31 dB Hz^(2/3) at 1 GHz and 101.28 dB Hz^(2/3) at 5 GHz","length_q":"","evidence_ref":"data/evidence/feng2022.yaml","notes":"Reference MZI fabricated on the same chip with similar waveguide dimensions and electrode design (p.5); no geometry, Vpi, loss or bandwidth reported for it. SFDR: 102.31 dB Hz^(2/3) at 1 GHz (Fig. 3(b)) and 101.28 dB Hz^(2/3) at 5 GHz (Fig…"},{"device_id":"fukui2025-a","paper_id":"fukui2025","year":2025,"platform":"Polymer","eo_material":"eo_polymer","device_class":"free_space","row_kind":"device","band":"s_band","wavelength_nm":1510,"length_mm":0.04,"integration":"wafer_bonded_iii_v","waveguide_platform":"other","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":17.5,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/fukui2025.yaml","notes":"Free-space metasurface, not a waveguide device: no Vpi; resonance shift 18 pm/V (derived from Fano-fit resonance wavelength versus DC voltage, Supp. Fig. S8c). Resonance at 1510 nm; R+T above 0.88 across 1480-1540 nm, so the loss -10log10(…"},{"device_id":"fukui2025-b","paper_id":"fukui2025","year":2025,"platform":"Polymer","eo_material":"eo_polymer","device_class":"free_space","row_kind":"design","band":"c_band","wavelength_nm":1550,"length_mm":0.04,"integration":"wafer_bonded_iii_v","waveguide_platform":"other","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":40,"bw_q":"gt","bw_method":"indirect","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/fukui2025.yaml","notes":"Simulated design (2D FDTD for optics, 3D FEM for RC bandwidth), not a measurement: InP HCG with Lambda 760 nm, d 630 nm, w 380 nm, doping 1e19 cm-3, 40x40 um2, r33 200 pm/V assumed. wavelength_nm 1550 and il_onchip_db 0.24 follow Table S1…"},{"device_id":"gaier2025-a","paper_id":"gaier2025","year":2025,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"phase_shifter","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":2,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"per_arm_phase_shifter","vpil_best":3.4,"vpil_source":"reported_rf","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/gaier2025.yaml","notes":"Free-space-fed device: the mmWave is captured by a 400 um dipole antenna (with a hyper-hemispherical Si back lens) and launched into the 2 mm coplanar-strip line. VpiL 3.4 V cm is the authors' calculation from the sideband ratio and the on…"},{"device_id":"gaier2025-b","paper_id":"gaier2025","year":2025,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"phase_shifter","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":2,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"per_arm_phase_shifter","vpil_best":3.65,"vpil_source":"reported_rf","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/gaier2025.yaml","notes":"VpiL 3.65 V cm in WR2.8 is the authors' derived value (same method as -a: eta 2-6 % across the band estimated with Eq. 1, Z_TL not stated; band 240-380 GHz). No bandwidth entered: the detection experiment (Fig. 4, p.9-10) amplitude-modulat…"},{"device_id":"gao2024-a","paper_id":"gao2024","year":2024,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"phase_shifter","row_kind":"device","band":"cl_band","wavelength_nm":null,"length_mm":10,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"unspecified","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/gao2024.yaml","notes":"VERSION arXiv v1. Two GSG electrode pairs joined by a delay waveguide and crossing waveguides so the optical phase accumulates with the same sign in both pairs only when the delay equals an odd half-period of the RF: Vpi falls to about 3 V…"},{"device_id":"geravand2025-a","paper_id":"geravand2025","year":2024,"platform":"SiPh","eo_material":"silicon_plasma_dispersion","device_class":"ring","row_kind":"device","band":"c_band","wavelength_nm":1549.9,"length_mm":null,"integration":"foundry_native","waveguide_platform":"soi_rib","vpi_convention":"per_arm_phase_shifter","vpil_best":0.96,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/geravand2025.yaml","notes":"Version: arXiv 2412.17986v1 (preprint, 34 pp incl. Supplementary Notes), not the Nature Photonics version of record. Test MRM with the same design as the rings in the I/Q modulator (geravand2025-b); characterization row only. EO S21 at res…"},{"device_id":"geravand2025-b","paper_id":"geravand2025","year":2024,"platform":"SiPh","eo_material":"silicon_plasma_dispersion","device_class":"iq_mzm","row_kind":"device","band":"c_band","wavelength_nm":1550.5,"length_mm":null,"integration":"foundry_native","waveguide_platform":"soi_rib","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":35,"bw_q":"approx","bw_method":"eo_s21","max_baud_gbd":180,"max_line_rate_gbps":null,"max_net_rate_gbps":1000,"modulation_format":"Coherent QPSK up to 180 GBd, 16QAM up to 150 GBd, 32QAM up to 130 GBd (single polarization, back-to-back, 24 percent SD…","length_q":"","evidence_ref":"data/evidence/geravand2025.yaml","notes":"Version: arXiv 2412.17986v1 preprint (stamp 23 Dec 2024), not the Nature Photonics version of record. Headline device: two nested MRM-assisted MZMs (four identical add-drop MRMs, geravand2025-a design) forming an I/Q modulator, push-pull (…"},{"device_id":"ghavami2023-a","paper_id":"ghavami2023","year":2023,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"design","band":"","wavelength_nm":null,"length_mm":5,"integration":"","waveguide_platform":"lnoi_rib","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":300,"bw_q":"approx","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/ghavami2023.yaml","notes":"Design/simulation only. Bandwidth wording differs: abstract 'up to 300 GHz for a 5 mm-long device', introduction p.2 'over 300 GHz', Sec. 2.1.2 'exceeding 200 GHz', conclusion 'over 300 GHz'; Fig. 1(c) shows the equalized response (peak ab…"},{"device_id":"ghavami2023-b","paper_id":"ghavami2023","year":2023,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"design","band":"","wavelength_nm":null,"length_mm":null,"integration":"","waveguide_platform":"","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":70,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/ghavami2023.yaml","notes":"Regular traveling-wave MZM without equalizer simulated in COMSOL, described as having very low microwave loss and good velocity and impedance matching but a 70 GHz bandwidth (Sec. 2.1.1, Fig. 1(c) blue curve reaches -3 dB near 70 GHz). Len…"},{"device_id":"giambra2021-a","paper_id":"giambra2021","year":2020,"platform":"Graphene/2D","eo_material":"graphene_2d","device_class":"eam","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":0.03,"integration":"transferred_2d","waveguide_platform":"sin","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":11.5,"bw_q":"approx","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"approx","evidence_ref":"data/evidence/giambra2021.yaml","notes":"Numbers from arXiv v2 (2012.05816v2, 17 pages; page-1 footer shows the ACS Nano typeset article, received 2020-11-20, accepted 2021-01-21). 30 DSLG EAMs on 4 chips of one 150 mm wafer with uniform performance +/-10% (p.2). Operating wavele…"},{"device_id":"giambra2021-b","paper_id":"giambra2021","year":2020,"platform":"Graphene/2D","eo_material":"graphene_2d","device_class":"eam","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":0.06,"integration":"transferred_2d","waveguide_platform":"sin","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":6.5,"bw_q":"approx","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"approx","evidence_ref":"data/evidence/giambra2021.yaml","notes":"Numbers from arXiv v2 (2012.05816v2, 17 pages; page-1 footer shows the ACS Nano typeset article, received 2020-11-20, accepted 2021-01-21). 30 DSLG EAMs on 4 chips of one 150 mm wafer with uniform performance +/-10% (p.2). Operating wavele…"},{"device_id":"giambra2021-c","paper_id":"giambra2021","year":2020,"platform":"Graphene/2D","eo_material":"graphene_2d","device_class":"eam","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":0.09,"integration":"transferred_2d","waveguide_platform":"sin","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":7,"bw_q":"approx","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"approx","evidence_ref":"data/evidence/giambra2021.yaml","notes":"Numbers from arXiv v2 (2012.05816v2, 17 pages; page-1 footer shows the ACS Nano typeset article, received 2020-11-20, accepted 2021-01-21). 30 DSLG EAMs on 4 chips of one 150 mm wafer with uniform performance +/-10% (p.2). Operating wavele…"},{"device_id":"giambra2021-d","paper_id":"giambra2021","year":2020,"platform":"Graphene/2D","eo_material":"graphene_2d","device_class":"eam","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":0.12,"integration":"transferred_2d","waveguide_platform":"sin","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":4,"bw_q":"approx","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"approx","evidence_ref":"data/evidence/giambra2021.yaml","notes":"Numbers from arXiv v2 (2012.05816v2, 17 pages; page-1 footer shows the ACS Nano typeset article, received 2020-11-20, accepted 2021-01-21). 30 DSLG EAMs on 4 chips of one 150 mm wafer with uniform performance +/-10% (p.2). Operating wavele…"},{"device_id":"gong2026-a","paper_id":"gong2026","year":2026,"platform":"SiPh","eo_material":"silicon_plasma_dispersion","device_class":"mzm","row_kind":"device","band":"o_band","wavelength_nm":null,"length_mm":null,"integration":"foundry_native","waveguide_platform":"soi_rib","vpi_convention":"unspecified","vpil_best":1.8,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":61,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":100,"max_line_rate_gbps":240,"max_net_rate_gbps":null,"modulation_format":"PAM4 at -1 V bias, 7-tap FFE, BER target 3.8e-3: 160 Gb/s TDECQ 1.3 dB (3.2 Vppd); 200 Gb/s TDECQ 2.9 dB (3.2 Vppd) and…","length_q":"","evidence_ref":"data/evidence/gong2026.yaml","notes":"VpiL 1.80 V cm (std 0.016) and propagation loss 10.3 dB/cm (median, std 0.15) are 10-lot statistics (Fig. 2); bias and per-arm versus MZM definition not stated. Bandwidth 61 GHz is the -1 V average (Fig. 3(a)); lot median 61, std 3 GHz. ER…"},{"device_id":"gong2026-b","paper_id":"gong2026","year":2026,"platform":"SiPh","eo_material":"silicon_plasma_dispersion","device_class":"mzm","row_kind":"device","band":"o_band","wavelength_nm":null,"length_mm":null,"integration":"foundry_native","waveguide_platform":"soi_rib","vpi_convention":"unspecified","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":67,"bw_q":"gt","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/gong2026.yaml","notes":"Same MZM at -2 V bias: Fig. 3(b) traces stay above -3 dB to the 67 GHz limit, text states >67 GHz. Slight peaking from under-termination at higher line impedance."},{"device_id":"gui2022-a","paper_id":"gui2022","year":2021,"platform":"Other","eo_material":"transparent_conducting_oxide","device_class":"mzm","row_kind":"design","band":"c_band","wavelength_nm":1550,"length_mm":0.0047,"integration":"monolithic","waveguide_platform":"soi_strip","vpi_convention":"per_arm_phase_shifter","vpil_best":0.0108,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":102,"bw_q":"","bw_method":"indirect","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/gui2022.yaml","notes":"Numbers from arXiv v2 (2112.10926v2, 14 pages incl. Supplementary Information); associated journal Nanophotonics 11(17), 4001-4009 (2022). Simulation and design study only (FEM eigenmode, COMSOL RC extraction, 3D FDTD/Lumerical): the only…"},{"device_id":"gui2022-b","paper_id":"gui2022","year":2021,"platform":"Other","eo_material":"transparent_conducting_oxide","device_class":"mzm","row_kind":"design","band":"c_band","wavelength_nm":1550,"length_mm":0.0091,"integration":"monolithic","waveguide_platform":"soi_strip","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":71,"bw_q":"","bw_method":"indirect","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/gui2022.yaml","notes":"Numbers from arXiv v2 (2112.10926v2, 14 pages incl. Supplementary Information); associated journal Nanophotonics 11(17), 4001-4009 (2022). Simulation and design study only (FEM eigenmode, COMSOL RC extraction, 3D FDTD/Lumerical): the only…"},{"device_id":"guo2026-a","paper_id":"guo2026","year":2026,"platform":"TFLT","eo_material":"lithium_tantalate","device_class":"mzm","row_kind":"device","band":"visible","wavelength_nm":532,"length_mm":3,"integration":"monolithic","waveguide_platform":"ltoi_rib","vpi_convention":"mzm_push_pull","vpil_best":0.78,"vpil_source":"reported_dc","vpil_q":"approx","bw3db_ghz":50,"bw_q":"gt","bw_method":"eo_s21","max_baud_gbd":100,"max_line_rate_gbps":112,"max_net_rate_gbps":null,"modulation_format":"OOK 100 Gb/s and PAM-4 56 GBd (112 Gb/s) over 3 m; OOK 64 Gb/s over 9 m","length_q":"","evidence_ref":"data/evidence/guo2026.yaml","notes":"RF loss, n_rf, Z0 and ng are simulated CLTW design values (basis simulated/figure-read), not measurements; simulated Vpi*L 0.77 V cm. 50 ohm on-chip termination; 67 GHz GGB probe; PD Newport 1014. TFLN comparison device of similar geometry…"},{"device_id":"guo2026-b","paper_id":"guo2026","year":2026,"platform":"TFLT","eo_material":"lithium_tantalate","device_class":"mzm","row_kind":"device","band":"visible","wavelength_nm":532,"length_mm":3,"integration":"monolithic","waveguide_platform":"ltoi_rib","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"OSSB at 50 GHz drive, SSR > 15 dB; EO comb 11 lines at 50 GHz spacing, 7 flat-top","length_q":"","evidence_ref":"data/evidence/guo2026.yaml","notes":"Same TFLT platform as guo2026-a; cross-section not restated for the DD-MZM. No Vpi, bandwidth or loss reported for this device. SSR and comb metrics have no dedicated column."},{"device_id":"gupta2023-a","paper_id":"gupta2023","year":2023,"platform":"InP","eo_material":"inp_mqw","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":5,"integration":"foundry_native","waveguide_platform":"inp","vpi_convention":"mzm_push_pull","vpil_best":0.7,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":32,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":80,"max_line_rate_gbps":80,"max_net_rate_gbps":null,"modulation_format":"NRZ 64 Gb/s (SNR 5, ER 9.3 dB) and 80 Gb/s (SNR 4, ER 8 dB) optical eyes; PAM4 24 GBd (SNR 2.2, ER 5.5 dB, 3-bit 32 GBd…","length_q":"","evidence_ref":"data/evidence/gupta2023.yaml","notes":"Version: accepted manuscript (author's version, IEEE copyright notice), not the version of record (JLT 41(11) 3498-3504, Crossref date 2023-06-01). Headline device. Push-pull is stated by the authors (RF voltage divides equally and antipha…"},{"device_id":"gupta2023-b","paper_id":"gupta2023","year":2023,"platform":"InP","eo_material":"inp_mqw","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":4,"integration":"foundry_native","waveguide_platform":"inp","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":34,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/gupta2023.yaml","notes":"Version: accepted manuscript. Length-variant row: only the small-signal EO 3 dB bandwidth (34 GHz at 8 V bias, 1550 nm) is reported; no Vpi, IL or ER for 4 mm. The 4 mm and 3 mm devices were probed with a 50 ohm terminated probe instead of…"},{"device_id":"gupta2023-c","paper_id":"gupta2023","year":2023,"platform":"InP","eo_material":"inp_mqw","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":3,"integration":"foundry_native","waveguide_platform":"inp","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":42,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/gupta2023.yaml","notes":"Version: accepted manuscript. Length-variant row: only the small-signal EO 3 dB bandwidth (42 GHz at 8 V bias, 1550 nm) is reported; no Vpi, IL or ER for 3 mm. Terminated with a 50 ohm probe (p.6)."},{"device_id":"gupta2023-d","paper_id":"gupta2023","year":2023,"platform":"InP","eo_material":"inp_mqw","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1530,"length_mm":5,"integration":"foundry_native","waveguide_platform":"inp","vpi_convention":"mzm_push_pull","vpil_best":0.6,"vpil_source":"derived_dc","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/gupta2023.yaml","notes":"Version: accepted manuscript. Wavelength variant of gupta2023-a: only the half-wave voltage at 1530 nm is stated (Fig. 12(c) ER map not read quantitatively). Bias not stated, so not entered. Same Vpi definition as gupta2023-a (diagonal arr…"},{"device_id":"gupta2023-e","paper_id":"gupta2023","year":2023,"platform":"InP","eo_material":"inp_mqw","device_class":"mzm","row_kind":"device","band":"l_band","wavelength_nm":1570,"length_mm":5,"integration":"foundry_native","waveguide_platform":"inp","vpi_convention":"mzm_push_pull","vpil_best":0.85,"vpil_source":"derived_dc","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/gupta2023.yaml","notes":"Version: accepted manuscript. Wavelength variant of gupta2023-a: only the half-wave voltage at 1570 nm is stated (Fig. 12(d) ER map not read quantitatively). Bias not stated, so not entered. Same Vpi definition as gupta2023-a (diagonal arr…"},{"device_id":"han2023-a","paper_id":"han2023","year":2023,"platform":"SiPh","eo_material":"silicon_plasma_dispersion","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":0.124,"integration":"foundry_native","waveguide_platform":"soi_rib","vpi_convention":"unspecified","vpil_best":0.96,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":110,"bw_q":"approx","bw_method":"eo_s21","max_baud_gbd":112,"max_line_rate_gbps":112,"max_net_rate_gbps":null,"modulation_format":"OOK, 70 / 84 / 98 / 100 / 112 Gb/s; eye diagrams at 100 and 112 Gb/s without pre-equalization or DSP; BER with offline…","length_q":"","evidence_ref":"data/evidence/han2023.yaml","notes":"Device A (Np 20, Nr 10). Vpi 78 V and VpiL 0.96 V cm come from a sinusoidal fit to a transmission change of only about 10 percent over 0-5 V (Fig. S4); the authors state the response is strongly nonlinear (efficiency factor 0.013 pi/V, pha…"},{"device_id":"han2023-b","paper_id":"han2023","year":2023,"platform":"SiPh","eo_material":"silicon_plasma_dispersion","device_class":"mzm","row_kind":"device","band":"","wavelength_nm":null,"length_mm":0.249,"integration":"foundry_native","waveguide_platform":"soi_rib","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/han2023.yaml","notes":"Device B, same-chip sibling of Device A (supplement Sec. S5, S7): only the total insertion loss 10.5 dB is reported as a device metric. The passband narrows from 8 nm (Device A) to 7 nm (Fig. S6, supplement p.9); the IL scope is not restat…"},{"device_id":"han2023-c","paper_id":"han2023","year":2023,"platform":"SiPh","eo_material":"silicon_plasma_dispersion","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":0.124,"integration":"foundry_native","waveguide_platform":"soi_rib","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":110,"bw_q":"gt","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/han2023.yaml","notes":"Device A (Np 20, Nr 10) at 4 V reverse bias; the headline row han2023-a is at 3.5 V (same physical device, han2023-device-a). Supplement p.11-12 Sec. S8: 'by slightly increasing the reverse bias voltage to 4 V, the 3 dB bandwidth could fur…"},{"device_id":"he2019-a","paper_id":"he2019","year":2018,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":null,"length_mm":3,"integration":"bonded_heterogeneous","waveguide_platform":"lnoi_rib","vpi_convention":"mzm_push_pull","vpil_best":2.2,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":70,"bw_q":"gt","bw_method":"eo_s21","max_baud_gbd":100,"max_line_rate_gbps":112,"max_net_rate_gbps":null,"modulation_format":"OOK 56, 72, 84 and 100 Gb/s (dynamic ER 11.8, 6.0, 5.5, 5.0 dB); PAM-4 28 and 56 GBd (56 and 112 Gb/s)","length_q":"","evidence_ref":"data/evidence/he2019.yaml","notes":"Numbers from the arXiv-style manuscript (a later revision than arXiv v1) with Supplementary Information in the cache; the Nature Photonics version was not read. Vpi 7.4 V from a 100 kHz triangular sweep (Fig. 2a arrow; text), entered as DC…"},{"device_id":"he2019-b","paper_id":"he2019","year":2018,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":null,"length_mm":5,"integration":"bonded_heterogeneous","waveguide_platform":"lnoi_rib","vpi_convention":"mzm_push_pull","vpil_best":2.5,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":70,"bw_q":"gt","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/he2019.yaml","notes":"Numbers from the arXiv-style manuscript (a later revision than arXiv v1) with Supplementary Information in the cache; the Nature Photonics version was not read. Same cross-section as the 3 mm device. Vpi 5.1 V from the 100 kHz triangular s…"},{"device_id":"heidari2022-a","paper_id":"heidari2022","year":2021,"platform":"Graphene/2D","eo_material":"graphene_2d","device_class":"eam","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":null,"integration":"transferred_2d","waveguide_platform":"other","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":60,"bw_q":"approx","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/heidari2022.yaml","notes":"Numbers from arXiv v2 (2109.07476v2, 5 pages); associated journal Nanophotonics 11(17), 4011-4016 (2022). Measured: S21 small-signal response (VNA, DFB laser at 1550 nm; Fig. 3(b)-(c)) and transmission versus drive voltage at 1530, 1545, 1…"},{"device_id":"hess2026-a","paper_id":"hess2026","year":2026,"platform":"Polymer","eo_material":"eo_polymer","device_class":"ring","row_kind":"device","band":"o_band","wavelength_nm":1317,"length_mm":0.006,"integration":"polymer_backfill","waveguide_platform":"plasmonic_mim","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":100,"bw_q":"gt","bw_method":"eo_s21","max_baud_gbd":224,"max_line_rate_gbps":null,"max_net_rate_gbps":445,"modulation_format":"PAM8 168 GBd net 445 Gb/s (Setup B, 80 GHz AWG); PAM8 net 400 Gb/s at 160 GBd (Setup A) and 144 GBd (Setup B); PAM4 224…","length_q":"","evidence_ref":"data/evidence/hess2026.yaml","notes":"Wavelength is Setup B laser (445 Gb/s); Setup A 1305.2 nm; IL, ER and EO wavelength not stated. Abstract 2.2 dB = 7.8 dB minimum total loss at 1303.3 nm minus 2 x 2.8 dB couplers; 2.6 dB at operating wavelength. Resonance drift 0.048 and 0…"},{"device_id":"hillier2025-1mm-ee","paper_id":"hillier2025","year":2025,"platform":"InP","eo_material":"inp_mqw","device_class":"mzm","row_kind":"device","band":"","wavelength_nm":null,"length_mm":1,"integration":"foundry_native","waveguide_platform":"inp","vpi_convention":"unspecified","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/hillier2025.yaml","notes":"Best-performing design of a 22-device array on one 4.6 x 4.0 mm chip (w_wvg 0.8 um, w_sig 10 um, signal-signal gap 7 um, Table 2); the JePPIX PDK process at SMART Photonics with an MQW modulator stack. Wavelength, electrode metal, MQW well…"},{"device_id":"hillier2025-1mm-q1","paper_id":"hillier2025","year":2025,"platform":"InP","eo_material":"inp_mqw","device_class":"mzm","row_kind":"device","band":"","wavelength_nm":null,"length_mm":1,"integration":"foundry_native","waveguide_platform":"inp","vpi_convention":"unspecified","vpil_best":1.19,"vpil_source":"derived_dc","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/hillier2025.yaml","notes":"Best-performing design of a 22-device array on one 4.6 x 4.0 mm chip (w_wvg 0.8 um, w_sig 10 um, signal-signal gap 7 um, Table 2); the JePPIX PDK process at SMART Photonics with an MQW modulator stack. Wavelength, electrode metal, MQW well…"},{"device_id":"hillier2025-1mm-q2","paper_id":"hillier2025","year":2025,"platform":"InP","eo_material":"inp_mqw","device_class":"mzm","row_kind":"device","band":"","wavelength_nm":null,"length_mm":1,"integration":"foundry_native","waveguide_platform":"inp","vpi_convention":"unspecified","vpil_best":0.31,"vpil_source":"derived_dc","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/hillier2025.yaml","notes":"Best-performing design of a 22-device array on one 4.6 x 4.0 mm chip (w_wvg 0.8 um, w_sig 10 um, signal-signal gap 7 um, Table 2); the JePPIX PDK process at SMART Photonics with an MQW modulator stack. Wavelength, electrode metal, MQW well…"},{"device_id":"hillier2025-2mm-data","paper_id":"hillier2025","year":2025,"platform":"InP","eo_material":"inp_mqw","device_class":"mzm","row_kind":"device","band":"","wavelength_nm":null,"length_mm":2,"integration":"foundry_native","waveguide_platform":"inp","vpi_convention":"unspecified","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":192,"max_line_rate_gbps":320,"max_net_rate_gbps":256,"modulation_format":"OOK below the 25 % OH HD-FEC threshold to 192 GBd (no bit errors detected below 160 GBd; threshold crossed between 192…","length_q":"","evidence_ref":"data/evidence/hillier2025.yaml","notes":"Best-performing design of a 22-device array on one 4.6 x 4.0 mm chip (w_wvg 0.8 um, w_sig 10 um, signal-signal gap 7 um, Table 2); the JePPIX PDK process at SMART Photonics with an MQW modulator stack. Wavelength, electrode metal, MQW well…"},{"device_id":"hillier2025-2mm-q1","paper_id":"hillier2025","year":2025,"platform":"InP","eo_material":"inp_mqw","device_class":"mzm","row_kind":"device","band":"","wavelength_nm":null,"length_mm":2,"integration":"foundry_native","waveguide_platform":"inp","vpi_convention":"unspecified","vpil_best":1.4,"vpil_source":"derived_dc","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/hillier2025.yaml","notes":"Best-performing design of a 22-device array on one 4.6 x 4.0 mm chip (w_wvg 0.8 um, w_sig 10 um, signal-signal gap 7 um, Table 2); the JePPIX PDK process at SMART Photonics with an MQW modulator stack. Wavelength, electrode metal, MQW well…"},{"device_id":"hillier2025-2mm-q2","paper_id":"hillier2025","year":2025,"platform":"InP","eo_material":"inp_mqw","device_class":"mzm","row_kind":"device","band":"","wavelength_nm":null,"length_mm":2,"integration":"foundry_native","waveguide_platform":"inp","vpi_convention":"unspecified","vpil_best":0.8,"vpil_source":"derived_dc","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/hillier2025.yaml","notes":"Best-performing design of a 22-device array on one 4.6 x 4.0 mm chip (w_wvg 0.8 um, w_sig 10 um, signal-signal gap 7 um, Table 2); the JePPIX PDK process at SMART Photonics with an MQW modulator stack. Wavelength, electrode metal, MQW well…"},{"device_id":"hillier2025-2mm-q3","paper_id":"hillier2025","year":2025,"platform":"InP","eo_material":"inp_mqw","device_class":"mzm","row_kind":"device","band":"","wavelength_nm":null,"length_mm":2,"integration":"foundry_native","waveguide_platform":"inp","vpi_convention":"unspecified","vpil_best":0.5599999999999999,"vpil_source":"derived_dc","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/hillier2025.yaml","notes":"Best-performing design of a 22-device array on one 4.6 x 4.0 mm chip (w_wvg 0.8 um, w_sig 10 um, signal-signal gap 7 um, Table 2); the JePPIX PDK process at SMART Photonics with an MQW modulator stack. Wavelength, electrode metal, MQW well…"},{"device_id":"hillier2025-design","paper_id":"hillier2025","year":2025,"platform":"InP","eo_material":"inp_mqw","device_class":"mzm","row_kind":"design","band":"","wavelength_nm":null,"length_mm":1,"integration":"","waveguide_platform":"inp","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":120,"bw_q":"approx","bw_method":"indirect","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/hillier2025.yaml","notes":"Equivalent-circuit model prediction (bw_method indirect: simulated, not a VNA/LCA response), not a fabricated device: w_wvg 0.6 um, w_sig 3.8 um, waveguide-to-signal gap 0.3 um, signal-signal gap 3.6 um, 1 mm electrode, 10 V DC reverse bia…"},{"device_id":"horst2025-d1","paper_id":"horst2025","year":2025,"platform":"Polymer","eo_material":"eo_polymer","device_class":"phase_shifter","row_kind":"device","band":"c_band","wavelength_nm":null,"length_mm":0.01,"integration":"polymer_backfill","waveguide_platform":"plasmonic_mim","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":880,"bw_q":"","bw_method":"sideband","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/horst2025.yaml","notes":"THz-modulation experiment: sinusoidal THz source (eight mixer-based sources, 10 MHz to 1.14 THz) fed through GSG probes, optical sideband read with an OSA; response below 10 MHz flat per earlier work, lower end limited by OSA resolution. P…"},{"device_id":"horst2025-d2","paper_id":"horst2025","year":2025,"platform":"Polymer","eo_material":"eo_polymer","device_class":"phase_shifter","row_kind":"device","band":"c_band","wavelength_nm":null,"length_mm":0.01,"integration":"polymer_backfill","waveguide_platform":"plasmonic_mim","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":997,"bw_q":"","bw_method":"sideband","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/horst2025.yaml","notes":"Same experiment as Device 1 with a smaller signal pad (compatible with 25 um pitch probes); stated as the largest EO bandwidth of any EO device to the authors' knowledge. In Fig. 1(c) the Device 2 trace starts near 500 GHz, so no low-frequ…"},{"device_id":"horst2025-pm","paper_id":"horst2025","year":2025,"platform":"Polymer","eo_material":"eo_polymer","device_class":"phase_shifter","row_kind":"device","band":"c_band","wavelength_nm":null,"length_mm":0.01,"integration":"polymer_backfill","waveguide_platform":"plasmonic_mim","vpi_convention":"per_arm_phase_shifter","vpil_best":0.0234,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/horst2025.yaml","notes":"Loss and efficiency are stated for 'the 10 um long phase modulator' without saying which of Devices 1 and 2 (or another) it is, so they sit in their own row with no bandwidth. Vpi L 234 V um stated for the phase modulator and 117 V um for…"},{"device_id":"hou2024-a","paper_id":"hou2024","year":2023,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"ring","row_kind":"device","band":"c_band","wavelength_nm":1561.36,"length_mm":null,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/hou2024.yaml","notes":"Two identical-design rings (radius 40 um) coupled to one bus, one signal-ground electrode pair giving opposite fields in the rings (p.4, Fig. 1). Aligned ring-pair ER 32 dB (p.8; around 32 dB p.9; abstract and Table 1 state beyond 30 dB),…"},{"device_id":"hou2024-b","paper_id":"hou2024","year":2023,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"ring","row_kind":"device","band":"l_band","wavelength_nm":1567.8,"length_mm":null,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/hou2024.yaml","notes":"Single-ring modulator measured for the tuning efficiency: linear resonance shift 4.8 pm/V (240 pm at 50 V, Fig. 4b p.10), resonance near 1567.8 nm read from Fig. 4a (dashed lambda_res line, approximate). Radius 40 um is stated for the fabr…"},{"device_id":"hsu2024-a","paper_id":"hsu2024","year":2023,"platform":"SiPh","eo_material":"silicon_plasma_dispersion","device_class":"ring","row_kind":"device","band":"o_band","wavelength_nm":1317.54,"length_mm":0.0314,"integration":"monolithic","waveguide_platform":"soi_rib","vpi_convention":"resonance_tuning_derived","vpil_best":0.12,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":11,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":35,"max_line_rate_gbps":35,"max_net_rate_gbps":null,"modulation_format":"NRZ-OOK, PRBS9 (below 10 Gb/s) and PRBS15; 25 Gb/s open eye at 0.8 Vpp; 35 Gb/s open eye at 1.75 Vpp with pre-emphasis","length_q":"","evidence_ref":"data/evidence/hsu2024.yaml","notes":"Version: all values from arXiv 2308.16255v1 (21 pp incl. Supplementary Information), not the Nature Communications version of record. Heterogeneous Si ring (Intel 300 mm SOI photonics fab, passive ring) with a post-processed HfO2/ITiO gate…"},{"device_id":"hsu2024-b","paper_id":"hsu2024","year":2023,"platform":"SiPh","eo_material":"silicon_plasma_dispersion","device_class":"ring","row_kind":"design","band":"o_band","wavelength_nm":null,"length_mm":null,"integration":"monolithic","waveguide_platform":"soi_rib","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":52,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/hsu2024.yaml","notes":"Version: arXiv 2308.16255v1. Projected optimized design from the Device Optimization section (Fig. 7): TCO only on the outer sidewall, HfO2 thinned from 10 to 6 nm, hydrogen-doped indium oxide (mobility 150 cm^2/(V s), 1.5e20 cm^-3, litera…"},{"device_id":"hu2023-a","paper_id":"hu2023","year":2021,"platform":"SiPh","eo_material":"silicon_plasma_dispersion","device_class":"ring","row_kind":"device","band":"o_band","wavelength_nm":1312,"length_mm":null,"integration":"foundry_native","waveguide_platform":"soi_rib","vpi_convention":"unspecified","vpil_best":0.8,"vpil_source":"reported_dc","vpil_q":"approx","bw3db_ghz":42.5,"bw_q":"approx","bw_method":"link_eoe","max_baud_gbd":60,"max_line_rate_gbps":302,"max_net_rate_gbps":null,"modulation_format":"BPL-DMT, 256 subcarriers; 302 Gb/s back-to-back at 60 GBaud; 300 Gb/s over 1 km SSMF; Bi-GRU equalizer; BER under the 2…","length_q":"","evidence_ref":"data/evidence/hu2023.yaml","notes":"Version: all values from arXiv 2111.05331v1 (15 pp, preprint titled 'Beyond 300Gbps Silicon Microring Modulator with AI Acceleration'), not the Communications Engineering version of record (title differs; Crossref title used). Two rows by…"},{"device_id":"hu2023-b","paper_id":"hu2023","year":2021,"platform":"SiPh","eo_material":"silicon_plasma_dispersion","device_class":"ring","row_kind":"device","band":"o_band","wavelength_nm":null,"length_mm":null,"integration":"foundry_native","waveguide_platform":"soi_rib","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":67,"bw_q":"gt","bw_method":"unspecified","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/hu2023.yaml","notes":"Version: arXiv 2111.05331v1. Same physical ring as hu2023-a. The paper states an optical -3 dB bandwidth over 67 GHz at a detuning of 32 GHz with optical peaking at about 50 GHz; the supporting measurement is not shown in this preprint (de…"},{"device_id":"hu2026-a","paper_id":"hu2026","year":2025,"platform":"SiPh","eo_material":"silicon_plasma_dispersion","device_class":"ring","row_kind":"device","band":"o_band","wavelength_nm":1315,"length_mm":0.04,"integration":"foundry_native","waveguide_platform":"soi_rib","vpi_convention":"resonance_tuning_derived","vpil_best":0.57,"vpil_source":"reported_dc","vpil_q":"approx","bw3db_ghz":83,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":180,"max_line_rate_gbps":280,"max_net_rate_gbps":null,"modulation_format":"NRZ 32 Gb/s error-free (BER below 1e-12) over 2 km SSMF at 0.43 Vpp, no DSP; NRZ 80 Gb/s error-free with 3-tap FFE (0.5…","length_q":"","evidence_ref":"data/evidence/hu2026.yaml","notes":"Version: all values from arXiv 2509.01555v1 (55 pp incl. Supplementary Information), not the Laser & Photonics Reviews version of record. One physical device (8 um radius ring, 40 um doped region); two rows split by operating point (0 V se…"},{"device_id":"hu2026-b","paper_id":"hu2026","year":2025,"platform":"SiPh","eo_material":"silicon_plasma_dispersion","device_class":"ring","row_kind":"device","band":"o_band","wavelength_nm":1315,"length_mm":0.04,"integration":"foundry_native","waveguide_platform":"soi_rib","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":110,"bw_q":"gt","bw_method":"eo_s21","max_baud_gbd":200,"max_line_rate_gbps":400,"max_net_rate_gbps":null,"modulation_format":"NRZ 200 GBd (200 Gb/s, SNR 3.28 dB BtB); PAM4 180 GBd (360 Gb/s, TDECQ 3.37 dB BtB); PAM6 155 GBd (400 Gb/s, RoP 5.75 d…","length_q":"","evidence_ref":"data/evidence/hu2026.yaml","notes":"Version: arXiv 2509.01555v1 preprint values. Same physical device as hu2026-a, operated at -3 V reverse bias for scale-out links. Static spectral values and Vpi*L are on hu2026-a. EO S21 normalized, reference not stated; no 3 dB crossing o…"},{"device_id":"hu2026a-ch1","paper_id":"hu2026a","year":2026,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":7,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"mzm_push_pull","vpil_best":2.527,"vpil_source":"derived_dc","vpil_q":"","bw3db_ghz":40,"bw_q":"approx","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/hu2026a.yaml","notes":"Channel index follows Fig. 7 reading order (the paper does not number the panels); one of eight nominally identical MZMs on one chip. Fig. 7 plots S21 to about 47 GHz (read from the figure); the traces first dip below the drawn -3 dB line…"},{"device_id":"hu2026a-ch2","paper_id":"hu2026a","year":2026,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":7,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"mzm_push_pull","vpil_best":2.52,"vpil_source":"derived_dc","vpil_q":"","bw3db_ghz":40,"bw_q":"approx","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/hu2026a.yaml","notes":"Channel index follows Fig. 7 reading order (the paper does not number the panels); one of eight nominally identical MZMs on one chip. Fig. 7 plots S21 to about 47 GHz (read from the figure); the traces first dip below the drawn -3 dB line…"},{"device_id":"hu2026a-ch3","paper_id":"hu2026a","year":2026,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":7,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"mzm_push_pull","vpil_best":2.5620000000000003,"vpil_source":"derived_dc","vpil_q":"","bw3db_ghz":40,"bw_q":"approx","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/hu2026a.yaml","notes":"Channel index follows Fig. 7 reading order (the paper does not number the panels); one of eight nominally identical MZMs on one chip. Fig. 7 plots S21 to about 47 GHz (read from the figure); the traces first dip below the drawn -3 dB line…"},{"device_id":"hu2026a-ch4","paper_id":"hu2026a","year":2026,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":7,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"mzm_push_pull","vpil_best":2.618,"vpil_source":"derived_dc","vpil_q":"","bw3db_ghz":40,"bw_q":"approx","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/hu2026a.yaml","notes":"Channel index follows Fig. 7 reading order (the paper does not number the panels); one of eight nominally identical MZMs on one chip. Fig. 7 plots S21 to about 47 GHz (read from the figure); the traces first dip below the drawn -3 dB line…"},{"device_id":"hu2026a-ch5","paper_id":"hu2026a","year":2026,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":7,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"mzm_push_pull","vpil_best":2.548,"vpil_source":"derived_dc","vpil_q":"","bw3db_ghz":40,"bw_q":"approx","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/hu2026a.yaml","notes":"Channel index follows Fig. 7 reading order (the paper does not number the panels); one of eight nominally identical MZMs on one chip. Fig. 7 plots S21 to about 47 GHz (read from the figure); the traces first dip below the drawn -3 dB line…"},{"device_id":"hu2026a-ch6","paper_id":"hu2026a","year":2026,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":7,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"mzm_push_pull","vpil_best":2.52,"vpil_source":"derived_dc","vpil_q":"","bw3db_ghz":40,"bw_q":"approx","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/hu2026a.yaml","notes":"Channel index follows Fig. 7 reading order (the paper does not number the panels); one of eight nominally identical MZMs on one chip. Fig. 7 plots S21 to about 47 GHz (read from the figure); the traces first dip below the drawn -3 dB line…"},{"device_id":"hu2026a-ch7","paper_id":"hu2026a","year":2026,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":7,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"mzm_push_pull","vpil_best":2.618,"vpil_source":"derived_dc","vpil_q":"","bw3db_ghz":40,"bw_q":"approx","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/hu2026a.yaml","notes":"Channel index follows Fig. 7 reading order (the paper does not number the panels); one of eight nominally identical MZMs on one chip. Fig. 7 plots S21 to about 47 GHz (read from the figure); the traces first dip below the drawn -3 dB line…"},{"device_id":"hu2026a-ch8","paper_id":"hu2026a","year":2026,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":7,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"mzm_push_pull","vpil_best":2.681,"vpil_source":"derived_dc","vpil_q":"","bw3db_ghz":40,"bw_q":"approx","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/hu2026a.yaml","notes":"Channel index follows Fig. 7 reading order (the paper does not number the panels); one of eight nominally identical MZMs on one chip. Fig. 7 plots S21 to about 47 GHz (read from the figure); the traces first dip below the drawn -3 dB line…"},{"device_id":"huang2026-a","paper_id":"huang2026","year":2026,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"","wavelength_nm":null,"length_mm":null,"integration":"monolithic","waveguide_platform":"","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":110,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/huang2026.yaml","notes":"Bare-chip reference for the packaged engine (huang2026-b). Only the 3 dB EO bandwidth is stated; length and geometry are not given; chip type from the Fig. 2(a) schematic only. Fig. 1(c) pre-packaging trace ends near -2.6 dB at 110 GHz (lo…"},{"device_id":"huang2026-b","paper_id":"huang2026","year":2026,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1550.12,"length_mm":null,"integration":"monolithic","waveguide_platform":"","vpi_convention":"unspecified","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":100,"bw_q":"approx","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"94 GHz RF tone (11.75 GHz source multiplied to 94 GHz, amplified to 24 dBm by the EICs) for fiber time/frequency compar…","length_q":"","evidence_ref":"data/evidence/huang2026.yaml","notes":"3 dB about 100 GHz after packaging (110 GHz before); paper also says 'above 100 GHz'. 100 GHz is the authors' stated bandwidth; Fig. 1(c) packaged trace first touches -3 dB near 72 GHz and runs at about -2.6 to -3.7 dB from 82 to 110 GHz (…"},{"device_id":"hulyal2026-a","paper_id":"hulyal2026","year":2026,"platform":"TFLT","eo_material":"lithium_tantalate","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":null,"length_mm":7.6,"integration":"monolithic","waveguide_platform":"","vpi_convention":"unspecified","vpil_best":3.5796,"vpil_source":"derived_dc","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":100,"max_line_rate_gbps":null,"max_net_rate_gbps":223,"modulation_format":"8 x 100 GBd PAM4 WDM (about 190 Gb/s net per channel); 8 x 80 GBd PAM8 WDM (about 196-223 Gb/s net per channel, 1.6943…","length_q":"","evidence_ref":"data/evidence/hulyal2026.yaml","notes":"Two cascaded AWGs: 10 dB on-chip plus 4 dB coupling, 106 GHz spacing, crosstalk below -20 dB; MZM loss, wavelength and EO S21 not reported. Net rate is the best single channel (f4, 80 GBd PAM8), Fig. 2(g)."},{"device_id":"johnson2025-200g-a","paper_id":"johnson2025","year":2025,"platform":"Polymer","eo_material":"eo_polymer","device_class":"mzm","row_kind":"device","band":"o_band","wavelength_nm":1310,"length_mm":0.4,"integration":"polymer_backfill","waveguide_platform":"soi_slot","vpi_convention":"mzm_differential","vpil_best":0.0852,"vpil_source":"derived_dc","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":112,"max_line_rate_gbps":224,"max_net_rate_gbps":null,"modulation_format":"PAM4 (PRBS13Q), 224 Gb/s; FFE 35 taps, CTLE, TDECQ equalizer","length_q":"","evidence_ref":"data/evidence/johnson2025.yaml","notes":"Table 1: Vpi,diff 2.13 +/- 0.12 V, bandwidth not measured. Link data (Table 2, p.3): 200G-A Tx0 at 1.8/1.6/1.4/1.2/1.0 Vppd gave dynamic ER 6.49/5.91/5.30/4.68/3.74 dB and SER 1.69e-2/1.06e-2/1.09e-2/9.9e-3/1.02e-2 (the last row is labelle…"},{"device_id":"johnson2025-200g-b","paper_id":"johnson2025","year":2025,"platform":"Polymer","eo_material":"eo_polymer","device_class":"mzm","row_kind":"device","band":"o_band","wavelength_nm":1310,"length_mm":0.4,"integration":"polymer_backfill","waveguide_platform":"soi_slot","vpi_convention":"mzm_differential","vpil_best":0.0932,"vpil_source":"derived_dc","vpil_q":"","bw3db_ghz":84.7,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":112,"max_line_rate_gbps":224,"max_net_rate_gbps":null,"modulation_format":"PAM4 (PRBS13Q), 224 Gb/s; FFE 35 taps, CTLE, TDECQ equalizer","length_q":"","evidence_ref":"data/evidence/johnson2025.yaml","notes":"Table 1: Vpi,diff 2.33 +/- 0.15 V, 3 dB EO bandwidth 84.7 +/- 3.1 GHz. Table 2: 200-B-Tx2 dynamic ER 6.79 dB, SER 1.17e-2; 200-B-Tx3 2.69 dB, 9.9e-3 (both 1.8 Vppd driver swing). Fig. 2 S21 is measured on a single arm with a 2-port analyse…"},{"device_id":"johnson2025-200g-best","paper_id":"johnson2025","year":2025,"platform":"Polymer","eo_material":"eo_polymer","device_class":"mzm","row_kind":"device","band":"o_band","wavelength_nm":1290,"length_mm":0.4,"integration":"polymer_backfill","waveguide_platform":"soi_slot","vpi_convention":"mzm_differential","vpil_best":0.06280000000000001,"vpil_source":"derived_dc","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/johnson2025.yaml","notes":"Authors convert 1.57 V (half the swing across each arm) to a SEPP-equivalent efficiency of 0.31 V.mm (= 1.57 V / 2 x 0.4 mm) and, with n 1.9, mode confinement factor 0.14 and 1290 nm in the push-pull Pockels relation (Eq. 1), an in-device…"},{"device_id":"johnson2025-200g-c","paper_id":"johnson2025","year":2025,"platform":"Polymer","eo_material":"eo_polymer","device_class":"mzm","row_kind":"device","band":"o_band","wavelength_nm":null,"length_mm":0.4,"integration":"polymer_backfill","waveguide_platform":"soi_slot","vpi_convention":"mzm_differential","vpil_best":0.0984,"vpil_source":"derived_dc","vpil_q":"","bw3db_ghz":84.6,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/johnson2025.yaml","notes":"Table 1: Vpi,diff 2.46 +/- 0.63 V, 3 dB EO bandwidth 84.6 +/- 2.1 GHz. No link data listed for this PIC. Vpi measurement wavelength not stated. Family-level statement (p.2): static ER typically >= 25 dB with some channels > 40 dB for the 2…"},{"device_id":"johnson2025-200g-design","paper_id":"johnson2025","year":2025,"platform":"Polymer","eo_material":"eo_polymer","device_class":"mzm","row_kind":"design","band":"o_band","wavelength_nm":1310,"length_mm":0.4,"integration":"polymer_backfill","waveguide_platform":"soi_slot","vpi_convention":"mzm_differential","vpil_best":0.08320000000000001,"vpil_source":"derived_dc","vpil_q":"","bw3db_ghz":80.3,"bw_q":"","bw_method":"unspecified","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/johnson2025.yaml","notes":"Design targets of the 200G/lambda modulators: 3 dB bandwidth 80.3 GHz, Vpi,diff 2.08 V, insertion loss 2.4 dB at 1310 nm (scope of the loss not defined, not entered in il columns). Not measured data."},{"device_id":"johnson2025-400g-a","paper_id":"johnson2025","year":2025,"platform":"Polymer","eo_material":"eo_polymer","device_class":"mzm","row_kind":"device","band":"o_band","wavelength_nm":null,"length_mm":null,"integration":"polymer_backfill","waveguide_platform":"soi_slot","vpi_convention":"mzm_differential","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":109,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/johnson2025.yaml","notes":"Table 1: Vpi,diff 6.74 +/- 0.40 V, 3 dB EO bandwidth 109 +/- 1 GHz. Phase-shifter length is not stated for the 400G design (only 'reduced'); length_mm left empty. Authors quote similar modulation efficiency of about 0.5 V.mm (SEPP-equivale…"},{"device_id":"johnson2025-400g-b","paper_id":"johnson2025","year":2025,"platform":"Polymer","eo_material":"eo_polymer","device_class":"mzm","row_kind":"device","band":"o_band","wavelength_nm":null,"length_mm":null,"integration":"polymer_backfill","waveguide_platform":"soi_slot","vpi_convention":"mzm_differential","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":110,"bw_q":"gt","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/johnson2025.yaml","notes":"Table 1: Vpi,diff 7.5 +/- 1.8 V, 3 dB EO bandwidth > 110 GHz (no crossing within the 110 GHz analyser range). The large Vpi spread is as listed. Vpi measurement wavelength not stated."},{"device_id":"johnson2025-400g-design","paper_id":"johnson2025","year":2025,"platform":"Polymer","eo_material":"eo_polymer","device_class":"mzm","row_kind":"design","band":"o_band","wavelength_nm":null,"length_mm":null,"integration":"polymer_backfill","waveguide_platform":"soi_slot","vpi_convention":"mzm_differential","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/johnson2025.yaml","notes":"Design Vpi,diff 5.52 V for the 400G/lambda modulators (shorter phase shifter, length not stated). Not measured data."},{"device_id":"karakida2026-a","paper_id":"karakida2026","year":2026,"platform":"Polymer","eo_material":"eo_polymer","device_class":"free_space","row_kind":"device","band":"s_band","wavelength_nm":1515,"length_mm":0.03,"integration":"monolithic","waveguide_platform":"other","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":40,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/karakida2026.yaml","notes":"Fit-derived f3dB; trace also crosses -3 dB near 40 GHz. S21 measured at 1532 nm, IL and ER at 1515 nm."},{"device_id":"kari2025-a","paper_id":"kari2025","year":2025,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"ring","row_kind":"device","band":"","wavelength_nm":null,"length_mm":null,"integration":"foundry_native","waveguide_platform":"","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/kari2025.yaml","notes":"Single resonator (not in an MZI), grating-coupler chip. Q 6232, f3dB 29 GHz stated (Fig. 4c p.8; \"SR 1\"); Basis measured: the abstract calls 29 GHz experimental, Fig. 4c plots a measured trace and Fig. 2e marks it \"29 GHz (VNA)\" beside Q-c…"},{"device_id":"kari2025-b","paper_id":"kari2025","year":2025,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"ring","row_kind":"device","band":"","wavelength_nm":null,"length_mm":null,"integration":"foundry_native","waveguide_platform":"","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":4.4,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/kari2025.yaml","notes":"Single resonator \"SR 2\". Q 26595, f3dB 4.4 GHz (Fig. 4c p.8, also labelled VNA in Fig. 2e); the plotted response shows ripple below 1 GHz. Optical spectrum Fig. 2b: reflection bandwidth 8.64 nm, ER -10.2 dB (entered 10.2 dB static). IL abo…"},{"device_id":"kari2025-c","paper_id":"kari2025","year":2025,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"iq_mzm","row_kind":"device","band":"","wavelength_nm":null,"length_mm":null,"integration":"foundry_native","waveguide_platform":"","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"Small-signal differential modulation, 500 kHz +-10 V lock-in; in-phase drive gives amplitude modulation, out-of-phase d…","length_q":"","evidence_ref":"data/evidence/kari2025.yaml","notes":"MZI with one resonator pair, Ti/Au heaters on the fully reflective mirrors for detuning trim (up to about 400 pm shift at about 0.2 mW, Fig. S4a p.19-21). Fitted resonance detuning 0.2 nm; isolation between in-phase and out-of-phase small-…"},{"device_id":"kari2025-d","paper_id":"kari2025","year":2025,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"iq_mzm","row_kind":"device","band":"","wavelength_nm":null,"length_mm":null,"integration":"foundry_native","waveguide_platform":"","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"Small-signal differential modulation, 500 kHz +-10 V lock-in; in-phase drive gives amplitude modulation, out-of-phase d…","length_q":"","evidence_ref":"data/evidence/kari2025.yaml","notes":"MZI with one resonator pair; fitted resonance detuning 0.12 nm; isolation 26.7 dB between in-phase and out-of-phase small-signal response (Fig. 3b p.6, p.7; no column). Paper states a modulation length of just 80 um (abstract; p.4; p.7 ele…"},{"device_id":"kari2025-e","paper_id":"kari2025","year":2025,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"iq_mzm","row_kind":"device","band":"","wavelength_nm":null,"length_mm":null,"integration":"foundry_native","waveguide_platform":"","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":10,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"Eye diagram at 10 Gbaud (data format and PRBS length not stated), differential drive, eye width 100 ps","length_q":"","evidence_ref":"data/evidence/kari2025.yaml","notes":"Eye diagram of an MZI (W = 0.55, L = 120, a configuration not in the Fig. 2 single-resonator set) during differential modulation: 10 Gbaud, Vpp = 6.32 V, dynamic ER 6.2 dB, eye width 100 ps (Fig. 4d p.8). Whether Vpp is per electrode or di…"},{"device_id":"kawahara2025-a","paper_id":"kawahara2025","year":2025,"platform":"SiPh","eo_material":"silicon_plasma_dispersion","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1537,"length_mm":0.15,"integration":"foundry_native","waveguide_platform":"other","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":50,"bw_q":"","bw_method":"link_eoe","max_baud_gbd":64,"max_line_rate_gbps":64,"max_net_rate_gbps":null,"modulation_format":"NRZ PRBS; 64 Gb/s with 5-tap receiver FFE (0.78 pJ/bit at 50 mW, SD-FEC compatible); 64 Gb/s unprocessed 1.1 pJ/bit at…","length_q":"","evidence_ref":"data/evidence/kawahara2025.yaml","notes":"Version: all values from arXiv 2506.04820v1 (10 pp, 'Received XX Month' template), not the IEEE JSTQE 32(2) version of record (Crossref issue 2026-03, CC BY on the VoR; not transferred); year follows the CSV and DOI prefix. Co-packaged tra…"},{"device_id":"kawahara2025-b","paper_id":"kawahara2025","year":2025,"platform":"SiPh","eo_material":"silicon_plasma_dispersion","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":null,"length_mm":0.15,"integration":"foundry_native","waveguide_platform":"other","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":55,"bw_q":"","bw_method":"link_eoe","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/kawahara2025.yaml","notes":"Version: arXiv 2506.04820v1. Same transmitter as kawahara2025-a at a different spectral (wavelength) point: ng = 30 with tunable driver peaking ON gives the widest bandwidth, 55 GHz (Table 1 'This Work' 55 GHz; text 'recorded'). Label read…"},{"device_id":"kawahara2026-a","paper_id":"kawahara2026","year":2026,"platform":"SiPh","eo_material":"silicon_plasma_dispersion","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":null,"length_mm":null,"integration":"foundry_native","waveguide_platform":"other","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":66,"bw_q":"gt","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/kawahara2026.yaml","notes":"Paper states f3dB about 80 GHz, but the -3 dB point is reached only on the dashed extrapolation (fit of the last 10 GHz); the measured trace ends near 66 GHz at about -0.4 dB. Entered as bound. Response peaks near +6 dB around 40-45 GHz. F…"},{"device_id":"kawahara2026-b","paper_id":"kawahara2026","year":2026,"platform":"SiPh","eo_material":"silicon_plasma_dispersion","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":null,"length_mm":null,"integration":"foundry_native","waveguide_platform":"other","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":35,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/kawahara2026.yaml","notes":"Reference response of the N = 3 device without the equalizer; trace ends near 66 GHz at about -9.5 dB and crosses -3 dB near 36-37 GHz on the plot, label reads 35 GHz."},{"device_id":"kawahara2026-c","paper_id":"kawahara2026","year":2026,"platform":"SiPh","eo_material":"silicon_plasma_dispersion","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":null,"length_mm":null,"integration":"foundry_native","waveguide_platform":"other","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":200,"max_net_rate_gbps":null,"modulation_format":"OOK DSP-free 100 Gb/s (TDEC 1.8 dB, 2.3 V) and 112 Gb/s (TDEC 2.7 dB, 2.0 V); OOK 140 Gb/s with 11-tap FFE (TDEC 2.5 dB…","length_q":"","evidence_ref":"data/evidence/kawahara2026.yaml","notes":"drive_vpp_v refers to 112 Gb/s OOK; the 200 Gb/s PAM4 max rate used 4.2-5.2 Vpp. N = 4 device used for the eyes; its EO response is not shown. OOK 112 Gb/s DSP-free at Vpp about 2 V; PAM4 uses Vpp 4.2 to 5.2 V (Fig. 3 caption, per-rate map…"},{"device_id":"khalil2026-a","paper_id":"khalil2026","year":2026,"platform":"Other","eo_material":"strontium_titanate","device_class":"ring","row_kind":"device","band":"c_band","wavelength_nm":1550.1,"length_mm":0.4,"integration":"bonded_heterogeneous","waveguide_platform":"other","vpi_convention":"resonance_tuning_derived","vpil_best":0.874,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/khalil2026.yaml","notes":"Racetrack resonator (critically coupled, FSR 0.781 nm) modulated at the 3 dB transmission point (detuned to f_res + kappa/2); push-push operation because the 8 um acoustic wavelength divides the 400 um arm separation (p.26-27). VpiL is a r…"},{"device_id":"kharel2021-a","paper_id":"kharel2021","year":2020,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1560,"length_mm":10,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"mzm_push_pull","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/kharel2021.yaml","notes":"Segment parameters (g,h,s,t,r,c) = (5,6,2,6,45,5) um (Fig. 1 caption); g is the gap between the facing segment edges at the waveguide. Vpi at 1 GHz 2.3 V (Bessel-function method); DC Vpi and Vpi at 50 GHz not reported for this length. RF l…"},{"device_id":"kharel2021-b","paper_id":"kharel2021","year":2020,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1560,"length_mm":20,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"mzm_push_pull","vpil_best":2.7,"vpil_source":"derived_dc","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/kharel2021.yaml","notes":"Headline device (abstract: RF Vpi 1.3 V at 1 GHz, 1.8 dB roll-off at 50 GHz). Vpi at 50 GHz 1.6 V is stated by the authors (1.3 V plus 1.8 dB) and not entered. The 1.35 V is called DC in the text and the Fig. 3 caption but labelled 1 MHz i…"},{"device_id":"kholeif2026-a","paper_id":"kholeif2026","year":2026,"platform":"Polymer","eo_material":"eo_polymer","device_class":"ring","row_kind":"device","band":"c_band","wavelength_nm":1563.1,"length_mm":0.086,"integration":"polymer_backfill","waveguide_platform":"soi_slot","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":100,"max_line_rate_gbps":200,"max_net_rate_gbps":152,"modulation_format":"PAM4 100 GBd 200 Gb/s at 220 mVpp (BER 3.8e-2, AIR 164.5, NDR 152 Gb/s); PAM4 60 GBd below HD-FEC at 140 mVpp; PAM8 40…","length_q":"","evidence_ref":"data/evidence/kholeif2026.yaml","notes":"Shifting efficiency 25.5 GHz/V (FSR 279.5 GHz over 11.1 V per 2 pi); FSR and tuning not entered in nm. Swing: 50 ohm-load convention."},{"device_id":"kieninger2020-best-dc","paper_id":"kieninger2020","year":2020,"platform":"Polymer","eo_material":"eo_polymer","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":0.28,"integration":"polymer_backfill","waveguide_platform":"soi_slot","vpi_convention":"mzm_push_pull","vpil_best":0.041,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/kieninger2020.yaml","notes":"Lowest Vpi across investigated devices. No table device identity or same-device loss is stated. No population loss or system bandwidth attached."},{"device_id":"kieninger2020-die1-mzm1","paper_id":"kieninger2020","year":2020,"platform":"Polymer","eo_material":"eo_polymer","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1557,"length_mm":0.28,"integration":"polymer_backfill","waveguide_platform":"soi_slot","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/kieninger2020.yaml","notes":"Table 1 physical replicate; no gate voltage. Phase loss averages constructive wavelengths within 1510-1580 nm, not just 1557 nm. Phase standard deviation 0.13 dB; sigma_meas 0.34 dB at listed wavelength; total-loss quoted uncertainty 0.23…"},{"device_id":"kieninger2020-die1-mzm2","paper_id":"kieninger2020","year":2020,"platform":"Polymer","eo_material":"eo_polymer","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1554,"length_mm":0.28,"integration":"polymer_backfill","waveguide_platform":"soi_slot","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/kieninger2020.yaml","notes":"Table 1 physical replicate; no gate voltage. Phase loss averages constructive wavelengths within 1510-1580 nm, not just 1554 nm. Phase standard deviation 0.30 dB; sigma_meas 0.18 dB at listed wavelength; total-loss quoted uncertainty 0.06…"},{"device_id":"kieninger2020-die1-mzm3","paper_id":"kieninger2020","year":2020,"platform":"Polymer","eo_material":"eo_polymer","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1561,"length_mm":0.28,"integration":"polymer_backfill","waveguide_platform":"soi_slot","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/kieninger2020.yaml","notes":"Table 1 physical replicate; no gate voltage. Phase loss averages constructive wavelengths within 1510-1580 nm, not just 1561 nm. Phase standard deviation 0.16 dB; sigma_meas 0.30 dB at listed wavelength; total-loss quoted uncertainty 0.24…"},{"device_id":"kieninger2020-die1-mzm4","paper_id":"kieninger2020","year":2020,"platform":"Polymer","eo_material":"eo_polymer","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1560,"length_mm":0.28,"integration":"polymer_backfill","waveguide_platform":"soi_slot","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/kieninger2020.yaml","notes":"Table 1 physical replicate; no gate voltage. Phase loss averages constructive wavelengths within 1510-1580 nm, not just 1560 nm. Phase standard deviation 0.08 dB; sigma_meas 0.20 dB at listed wavelength; total-loss quoted uncertainty 0.05…"},{"device_id":"kieninger2020-die2-mzm1","paper_id":"kieninger2020","year":2020,"platform":"Polymer","eo_material":"eo_polymer","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1563,"length_mm":0.28,"integration":"polymer_backfill","waveguide_platform":"soi_slot","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/kieninger2020.yaml","notes":"Table 1 physical replicate; no gate voltage. Phase loss averages constructive wavelengths within 1510-1580 nm, not just 1563 nm. Phase standard deviation 0.12 dB; sigma_meas 0.12 dB at listed wavelength; total-loss quoted uncertainty 0.06…"},{"device_id":"kieninger2020-die2-mzm2","paper_id":"kieninger2020","year":2020,"platform":"Polymer","eo_material":"eo_polymer","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1561,"length_mm":0.28,"integration":"polymer_backfill","waveguide_platform":"soi_slot","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/kieninger2020.yaml","notes":"Table 1 physical replicate; no gate voltage. Phase loss averages constructive wavelengths within 1510-1580 nm, not just 1561 nm. Phase standard deviation 0.25 dB; sigma_meas 0.17 dB at listed wavelength; total-loss quoted uncertainty 0.07…"},{"device_id":"kieninger2020-die2-mzm3","paper_id":"kieninger2020","year":2020,"platform":"Polymer","eo_material":"eo_polymer","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1558,"length_mm":0.28,"integration":"polymer_backfill","waveguide_platform":"soi_slot","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/kieninger2020.yaml","notes":"Table 1 physical replicate; no gate voltage. Phase loss averages constructive wavelengths within 1510-1580 nm, not just 1558 nm. Phase standard deviation 0.14 dB; sigma_meas 0.18 dB at listed wavelength; total-loss quoted uncertainty 0.08…"},{"device_id":"kieninger2020-die2-mzm4","paper_id":"kieninger2020","year":2020,"platform":"Polymer","eo_material":"eo_polymer","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1562,"length_mm":0.28,"integration":"polymer_backfill","waveguide_platform":"soi_slot","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/kieninger2020.yaml","notes":"Table 1 physical replicate; no gate voltage. Phase loss averages constructive wavelengths within 1510-1580 nm, not just 1562 nm. Phase standard deviation 0.07 dB; sigma_meas 0.14 dB at listed wavelength; total-loss quoted uncertainty 0.08…"},{"device_id":"kieninger2020-die3-mzm1","paper_id":"kieninger2020","year":2020,"platform":"Polymer","eo_material":"eo_polymer","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1563,"length_mm":0.28,"integration":"polymer_backfill","waveguide_platform":"soi_slot","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/kieninger2020.yaml","notes":"Table 1 physical replicate; no gate voltage. Phase loss averages constructive wavelengths within 1510-1580 nm, not just 1563 nm. Phase standard deviation 0.28 dB; sigma_meas 0.11 dB at listed wavelength; total-loss quoted uncertainty 0.06…"},{"device_id":"kieninger2020-die3-mzm2","paper_id":"kieninger2020","year":2020,"platform":"Polymer","eo_material":"eo_polymer","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1563,"length_mm":0.28,"integration":"polymer_backfill","waveguide_platform":"soi_slot","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/kieninger2020.yaml","notes":"Table 1 physical replicate; no gate voltage. Phase loss averages constructive wavelengths within 1510-1580 nm, not just 1563 nm. Phase standard deviation 0.19 dB; sigma_meas 0.12 dB at listed wavelength; total-loss quoted uncertainty 0.08…"},{"device_id":"kieninger2020-die3-mzm3","paper_id":"kieninger2020","year":2020,"platform":"Polymer","eo_material":"eo_polymer","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1564,"length_mm":0.28,"integration":"polymer_backfill","waveguide_platform":"soi_slot","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/kieninger2020.yaml","notes":"Table 1 physical replicate; no gate voltage. Phase loss averages constructive wavelengths within 1510-1580 nm, not just 1564 nm. Phase standard deviation 0.31 dB; sigma_meas 0.10 dB at listed wavelength; total-loss quoted uncertainty 0.05…"},{"device_id":"kieninger2020-die3-mzm4","paper_id":"kieninger2020","year":2020,"platform":"Polymer","eo_material":"eo_polymer","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1564,"length_mm":0.28,"integration":"polymer_backfill","waveguide_platform":"soi_slot","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/kieninger2020.yaml","notes":"Table 1 physical replicate; no gate voltage. Phase loss averages constructive wavelengths within 1510-1580 nm, not just 1564 nm. Phase standard deviation 0.32 dB; sigma_meas 0.28 dB at listed wavelength; total-loss quoted uncertainty 0.27…"},{"device_id":"kieninger2020-die4-mzm1","paper_id":"kieninger2020","year":2020,"platform":"Polymer","eo_material":"eo_polymer","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1554,"length_mm":0.28,"integration":"polymer_backfill","waveguide_platform":"soi_slot","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/kieninger2020.yaml","notes":"Table 1 physical replicate; no gate voltage. Phase loss averages constructive wavelengths within 1510-1580 nm, not just 1554 nm. Phase standard deviation 0.13 dB; sigma_meas 0.10 dB at listed wavelength; total-loss quoted uncertainty 0.07…"},{"device_id":"kieninger2020-die4-mzm2","paper_id":"kieninger2020","year":2020,"platform":"Polymer","eo_material":"eo_polymer","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1555,"length_mm":0.28,"integration":"polymer_backfill","waveguide_platform":"soi_slot","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/kieninger2020.yaml","notes":"Table 1 physical replicate; no gate voltage. Phase loss averages constructive wavelengths within 1510-1580 nm, not just 1555 nm. Phase standard deviation 0.25 dB; sigma_meas 0.14 dB at listed wavelength; total-loss quoted uncertainty 0.10…"},{"device_id":"kieninger2020-die4-mzm3","paper_id":"kieninger2020","year":2020,"platform":"Polymer","eo_material":"eo_polymer","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1563,"length_mm":0.28,"integration":"polymer_backfill","waveguide_platform":"soi_slot","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/kieninger2020.yaml","notes":"Table 1 physical replicate; no gate voltage. Phase loss averages constructive wavelengths within 1510-1580 nm, not just 1563 nm. Phase standard deviation 0.36 dB; sigma_meas 0.12 dB at listed wavelength; total-loss quoted uncertainty 0.08…"},{"device_id":"kieninger2020-die4-mzm4","paper_id":"kieninger2020","year":2020,"platform":"Polymer","eo_material":"eo_polymer","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1559,"length_mm":0.28,"integration":"polymer_backfill","waveguide_platform":"soi_slot","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/kieninger2020.yaml","notes":"Table 1 physical replicate; no gate voltage. Phase loss averages constructive wavelengths within 1510-1580 nm, not just 1559 nm. Phase standard deviation 0.28 dB; sigma_meas 0.11 dB at listed wavelength; total-loss quoted uncertainty 0.07…"},{"device_id":"kieninger2020-open-ended","paper_id":"kieninger2020","year":2020,"platform":"Polymer","eo_material":"eo_polymer","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1560,"length_mm":0.28,"integration":"polymer_backfill","waveguide_platform":"soi_slot","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":100,"max_line_rate_gbps":200,"max_net_rate_gbps":187,"modulation_format":"OOK;PAM4","length_q":"","evidence_ref":"data/evidence/kieninger2020.yaml","notes":"Gate field 0.1 V/nm. 0.78 Vpp amplifier output at 50 ohms; 0.72 Vpp after probe loss; 1.44 Vpp effective device swing. Open-end bandwidth lower than terminated 40 GHz but unspecified. PAM4 BER 3.6e-3. Laser output 11.5 dBm is not on-chip l…"},{"device_id":"kieninger2020-system-dc","paper_id":"kieninger2020","year":2020,"platform":"Polymer","eo_material":"eo_polymer","device_class":"mzm","row_kind":"device","band":"","wavelength_nm":null,"length_mm":0.28,"integration":"polymer_backfill","waveguide_platform":"soi_slot","vpi_convention":"mzm_push_pull","vpil_best":0.042,"vpil_source":"derived_dc","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/kieninger2020.yaml","notes":"DC Vpi stated for the data-experiment modulator. Wavelength and gate state of this particular DC reading are not restated. Kept separate from the lowest 1.48 V result and ungated loss. Same physical device as the 100 GBd system experiment…"},{"device_id":"kieninger2020-system-loss-ungated","paper_id":"kieninger2020","year":2020,"platform":"Polymer","eo_material":"eo_polymer","device_class":"mzm","row_kind":"device","band":"","wavelength_nm":null,"length_mm":0.28,"integration":"polymer_backfill","waveguide_platform":"soi_slot","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/kieninger2020.yaml","notes":"Same system device as system-dc/open-ended, separate ungated characterization. Phase loss averages wavelengths; fiber loss is total. Gate adds 0.8 dB total and an estimated 0.14 dB phase loss; no derived sum entered. Table identity unconfi…"},{"device_id":"kieninger2020-terminated","paper_id":"kieninger2020","year":2020,"platform":"Polymer","eo_material":"eo_polymer","device_class":"mzm","row_kind":"device","band":"","wavelength_nm":null,"length_mm":0.28,"integration":"polymer_backfill","waveguide_platform":"soi_slot","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":40,"bw_q":"","bw_method":"unspecified","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/kieninger2020.yaml","notes":"Termination is a load, not a measured characteristic impedance. Reference frequency and measurement range are not stated. Same physical device as the 100 GBd system experiment (Sec. 5 refers to one \"SOH MZM\" throughout); physical_device_id…"},{"device_id":"kim2025-mzm","paper_id":"kim2025","year":2025,"platform":"BTO","eo_material":"barium_titanate","device_class":"mzm","row_kind":"device","band":"","wavelength_nm":null,"length_mm":3.75,"integration":"monolithic","waveguide_platform":"bto_on_oxide_substrate","vpi_convention":"mzm_single_arm","vpil_best":0.54,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/kim2025.yaml","notes":"Single-arm MZM with MMI splitters (Fig. 3(c) SEM), poled with 120 V across the 3.6 um gap for 30 min (333 kV/cm). Effective Pockels coefficient r_eff about 162 pm/V is the authors' estimate from lambda g / (n^3 Gamma VpiL) with n about 2.2…"},{"device_id":"kohli2023-a","paper_id":"kohli2023","year":2023,"platform":"BTO","eo_material":"barium_titanate","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1557,"length_mm":0.015,"integration":"monolithic","waveguide_platform":"bto_on_sin","vpi_convention":"resonance_tuning_derived","vpil_best":0.0048,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":70,"bw_q":"gt","bw_method":"eo_s21","max_baud_gbd":216,"max_line_rate_gbps":256,"max_net_rate_gbps":null,"modulation_format":"2PAM (NRZ) 216 GBd; 4PAM 128 GBd","length_q":"","evidence_ref":"data/evidence/kohli2023.yaml","notes":"Single device: MZM with one plasmonic BTO phase shifter in each arm (200 um arm-length asymmetry), SiN from a foundry-produced platform (foundry not named), BTO wafer-scale integrated after planarization, BEOL plasmonic section. Vpi column…"},{"device_id":"kohli2025-iq","paper_id":"kohli2025","year":2025,"platform":"BTO","eo_material":"barium_titanate","device_class":"iq_mzm","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":0.0175,"integration":"monolithic","waveguide_platform":"bto_on_sin","vpi_convention":"per_arm_phase_shifter","vpil_best":0.007000000000000001,"vpil_source":"derived_dc","vpil_q":"","bw3db_ghz":70,"bw_q":"approx","bw_method":"sideband","max_baud_gbd":224,"max_line_rate_gbps":448,"max_net_rate_gbps":null,"modulation_format":"4QAM","length_q":"","evidence_ref":"data/evidence/kohli2025.yaml","notes":"Vpi columns are per phase shifter (4 V DC); MZ push-pull Vpi 2 V in vpi_mzm_pushpull_dc_v. No RF Vpi reported. 3 dB BW 70 GHz is the paper statement (3 dB drop between 10 and 70 GHz; text: response starts to drop at ~70 GHz; Fig. 3b captio…"},{"device_id":"kohli2025-mzm","paper_id":"kohli2025","year":2025,"platform":"BTO","eo_material":"barium_titanate","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":0.015,"integration":"monolithic","waveguide_platform":"bto_on_sin","vpi_convention":"per_arm_phase_shifter","vpil_best":0.0054,"vpil_source":"derived_dc","vpil_q":"","bw3db_ghz":110,"bw_q":"approx","bw_method":"sideband","max_baud_gbd":256,"max_line_rate_gbps":340,"max_net_rate_gbps":null,"modulation_format":"2PAM at 256 GBd; 4PAM at 170 GBd; 8PAM at 96 GBd","length_q":"","evidence_ref":"data/evidence/kohli2025.yaml","notes":"Row granularity: one row per distinct device (MZM, IQ, racetrack); DC and RF Vpi and all data-rate points share the row. Vpi columns are per phase shifter (3.6 V DC, 6.4 V at 40 GHz); the push-pull MZ Vpi of 1.8 V at DC (paper headline) is…"},{"device_id":"kohli2025-rt","paper_id":"kohli2025","year":2025,"platform":"BTO","eo_material":"barium_titanate","device_class":"ring","row_kind":"device","band":"o_band","wavelength_nm":1315.7,"length_mm":0.005,"integration":"monolithic","waveguide_platform":"bto_on_sin","vpi_convention":"resonance_tuning_derived","vpil_best":0.0015,"vpil_source":"derived_dc","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":200,"max_line_rate_gbps":200,"max_net_rate_gbps":null,"modulation_format":"2PAM","length_q":"","evidence_ref":"data/evidence/kohli2025.yaml","notes":"Resonant device. Vpi 3 V DC derived by the paper from 0.3 nm/V tuning (FSR 1.79 nm) after poling; single phase shifter in the cavity. On-chip device loss (below 2 dB, from reference waveguides) and ER (above 6 dB, static, Fig. 4b) are boun…"},{"device_id":"kotz2026-a","paper_id":"kotz2026","year":2026,"platform":"Polymer","eo_material":"eo_polymer","device_class":"iq_mzm","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":1,"integration":"polymer_backfill","waveguide_platform":"soi_slot","vpi_convention":"mzm_push_pull","vpil_best":0.079,"vpil_source":"derived_dc","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":200,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"16QAM 200 GBd over 85 km SMF (NGMI 0.857, above SD-FEC 25% OH threshold; AIR 712 Gbit/s at 192 GBd); 64QAM 144 GBd over…","length_q":"","evidence_ref":"data/evidence/kotz2026.yaml","notes":"Vpi 780 mV and 790 mV for the two nested MZMs (larger entered; frequency, wavelength and arm convention not stated). Drive swing below 1.1 Vpp. Fiber-to-fiber figure written as transmission 17.7 dB at 1550 nm. ECL 17.8 dBm is laser power,…"},{"device_id":"larocque2024-a","paper_id":"larocque2024","year":2023,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"iq_mzm","row_kind":"device","band":"c_band","wavelength_nm":1548.66,"length_mm":null,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":1.5,"bw_q":"approx","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"4-QAM (2 bits/symbol) from two binary-driven cavities, 2^7-1 PRBS, 20 MHz to 1 GHz modulation frequency, EVM below 0.27…","length_q":"","evidence_ref":"data/evidence/larocque2024.yaml","notes":"One physical device. No Vpi (resonant device, tuning efficiency instead). Per-cavity fit (Table I p.4, fitted to Fig. 3b,c and 4b): Q 6.6e4 / 7.4e4, total linewidth 2.9 / 2.6 GHz (cavity 1 / 2), kappa_c/kappa_i 0.46 / 1.42, tuning 1.15 / 1…"},{"device_id":"lee2020-a","paper_id":"lee2020","year":2020,"platform":"Graphene/2D","eo_material":"graphene_2d","device_class":"ring","row_kind":"device","band":"","wavelength_nm":null,"length_mm":0.005,"integration":"transferred_2d","waveguide_platform":"sin","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":14.7,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/lee2020.yaml","notes":"Numbers from arXiv v1 preprint (2007.00955v1, 21 pages incl. Supplementary Information); the Nanophotonics version (Crossref 10.1515/nanoph-2020-0363, 10(1) 99-104, 2020-09-25; Crossref lists publisher Wiley) was not read. Ring-resonator l…"},{"device_id":"lee2020-b","paper_id":"lee2020","year":2020,"platform":"Graphene/2D","eo_material":"graphene_2d","device_class":"ring","row_kind":"device","band":"l_band","wavelength_nm":1586.2,"length_mm":0.005,"integration":"transferred_2d","waveguide_platform":"sin","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":12.6,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":20,"max_line_rate_gbps":20,"max_net_rate_gbps":null,"modulation_format":"NRZ, PRBS 2^9-1, 5 to 20 Gb/s; calculated BER 7.4e-4 at 20 Gb/s (from eye Q)","length_q":"","evidence_ref":"data/evidence/lee2020.yaml","notes":"Numbers from arXiv v1 preprint (2007.00955v1, 21 pages incl. Supplementary Information); the Nanophotonics version (Crossref 10.1515/nanoph-2020-0363, 10(1) 99-104, 2020-09-25; Crossref lists publisher Wiley) was not read. Ring-resonator l…"},{"device_id":"lee2020a-a","paper_id":"lee2020a","year":2020,"platform":"Graphene/2D","eo_material":"graphene_2d","device_class":"eam","row_kind":"device","band":"","wavelength_nm":null,"length_mm":0.1,"integration":"transferred_2d","waveguide_platform":"sin","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":3.92,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":7,"max_line_rate_gbps":7,"max_net_rate_gbps":null,"modulation_format":"NRZ, PRBS 2^9-1, 7 Gbit/s per modulator (BER below HD-FEC 3.8e-3 for 30 of 32 devices)","length_q":"","evidence_ref":"data/evidence/lee2020a.yaml","notes":"Numbers from arXiv v1 preprint (2011.08832v1, 21 pages incl. Supplementary Information); no DOI or journal version found in the cache. Statistics over 32 modulators on one 8 mm x 1 mm chip: mean 3 dB BW 3.92 GHz (std 0.53, Fig. 3(c); text…"},{"device_id":"lee2020a-b","paper_id":"lee2020a","year":2020,"platform":"Graphene/2D","eo_material":"graphene_2d","device_class":"eam","row_kind":"design","band":"","wavelength_nm":null,"length_mm":null,"integration":"transferred_2d","waveguide_platform":"sin","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/lee2020a.yaml","notes":"Simulated design projection, not a fabricated device (arXiv v1, 2011.08832v1, Fig. 5(a,c), p.6-7). Expected modulation depth 15 dB before breakdown with 1 dB insertion loss (simulated); Monte Carlo yield above 80% at up to 20 Gbit/s, close…"},{"device_id":"lee2026-a","paper_id":"lee2026","year":2026,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"nir_above_u","wavelength_nm":2700,"length_mm":20,"integration":"monolithic","waveguide_platform":"suspended_lnoi","vpi_convention":"mzm_push_pull","vpil_best":5.4,"vpil_source":"derived_dc","vpil_q":"","bw3db_ghz":40,"bw_q":"gt","bw_method":"indirect","max_baud_gbd":1.5,"max_line_rate_gbps":3,"max_net_rate_gbps":null,"modulation_format":"OOK 1.5 GBd; PAM-4 0.5 and 1.5 GBd; PAM-8 0.5 GBd (BER below the 7 percent HD-FEC threshold; offline RLS equalization f…","length_q":"","evidence_ref":"data/evidence/lee2026.yaml","notes":"Passive suspended loss 1.2 dB/cm at 2.7 um. Z0 and n_RF stated only as matched to 50 ohm and ng. Detector-limited data rate. Authors' extrapolated 3 dB bandwidth 50 GHz (fit, Table 1 note d) and FOM 17.4 GHz/V not entered. Stated 2.7 dB dr…"},{"device_id":"lee2026-b","paper_id":"lee2026","year":2026,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"nir_above_u","wavelength_nm":2400,"length_mm":20,"integration":"monolithic","waveguide_platform":"suspended_lnoi","vpi_convention":"mzm_push_pull","vpil_best":4.6,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/lee2026.yaml","notes":"Active-region loss; passive suspended loss 2.2 dB/cm (Ext. Data Table 1); simulated metal loss 0.2 dB/cm."},{"device_id":"lee2026-c","paper_id":"lee2026","year":2026,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"mid_ir","wavelength_nm":3600,"length_mm":20,"integration":"monolithic","waveguide_platform":"suspended_lnoi","vpi_convention":"mzm_push_pull","vpil_best":8.6,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/lee2026.yaml","notes":"Active-region loss; passive 2.8 dB/cm; simulated metal loss 4.8 dB/cm. Fig. 2 caption: Vpi 4.26 V."},{"device_id":"lee2026-d","paper_id":"lee2026","year":2026,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":20,"integration":"monolithic","waveguide_platform":"suspended_lnoi","vpi_convention":"mzm_push_pull","vpil_best":3.6,"vpil_source":"derived_dc","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/lee2026.yaml","notes":"Near-infrared check of the broadband claim; only Vpi reported. 1.2-octave span with the 2.4-3.6 um data."},{"device_id":"lee2026-e","paper_id":"lee2026","year":2026,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"phase_shifter","row_kind":"device","band":"nir_above_u","wavelength_nm":null,"length_mm":40,"integration":"monolithic","waveguide_platform":"suspended_lnoi","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"EO comb: modulation index 4 pi at 29.2 GHz (2.7 um) and 4.2 pi at 27.2 GHz (2.36 um); 10 dB span 0.8 THz, 33 lines","length_q":"","evidence_ref":"data/evidence/lee2026.yaml","notes":"No Vpi or loss reported for the phase modulator. Waveguide crossing used to recycle the 2 cm line. Band from the 2.36 and 2.7 um comb operation (p.6), ISO 20473 near-IR."},{"device_id":"li2020-a","paper_id":"li2020","year":2020,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"ring","row_kind":"device","band":"c_band","wavelength_nm":1554.47,"length_mm":0.03,"integration":"monolithic","waveguide_platform":"suspended_lnoi","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/li2020.yaml","notes":"Resonant device, no Vpi reported; tuning 16 pm/V equals 1.98 GHz/V (stated, 1554 nm). Simulated: tuning 1.81 GHz/V, optical Q about 1e5, EO modal volume 0.58 um3 (1.52 (lambda/n)^3), capacitance about 22 fF; not entered as measured. ER 11.…"},{"device_id":"li2020-b","paper_id":"li2020","year":2020,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"ring","row_kind":"device","band":"c_band","wavelength_nm":null,"length_mm":null,"integration":"monolithic","waveguide_platform":"suspended_lnoi","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":17.5,"bw_q":"approx","bw_method":"eo_s21","max_baud_gbd":11,"max_line_rate_gbps":11,"max_net_rate_gbps":null,"modulation_format":"NRZ 2^7-1 PRBS, 9 and 11 Gb/s eye diagrams","length_q":"","evidence_ref":"data/evidence/li2020.yaml","notes":"Another similar device on the same chip with lower loaded Q (text 14000, Fig. 7 caption around 14000); geometry differences not stated, so geometry columns left empty (see row a for the design). 3 dB bandwidth about 17.5 GHz equals the pho…"},{"device_id":"li2020-c","paper_id":"li2020","year":2020,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"ring","row_kind":"device","band":"c_band","wavelength_nm":null,"length_mm":null,"integration":"monolithic","waveguide_platform":"suspended_lnoi","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":12.5,"bw_q":"approx","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/li2020.yaml","notes":"Second device in Fig. 7a (orange curve, Q around 20000, text: about 12.5 GHz). Reference level for the 3 dB cutoff not stated. Geometry not stated separately (see row a for the design)."},{"device_id":"li2022b-a","paper_id":"li2022b","year":2022,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"visible","wavelength_nm":532,"length_mm":3.3,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"mzm_push_pull","vpil_best":1.1,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":25,"bw_q":"gt","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/li2022b.yaml","notes":"Version of record numbers; they differ from the arXiv v1 row (bandwidth 25 vs 30 GHz, IL, Fig. 4 simulation with SiO2 cladding). EO measurement: cables, probes, photodetector (Newport 1414, 25 GHz) and a microwave amplifier (Talent Microwa…"},{"device_id":"li2024-c","paper_id":"li2024","year":2023,"platform":"BTO","eo_material":"barium_titanate","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":2,"integration":"foundry_native","waveguide_platform":"","vpi_convention":"mzm_push_pull","vpil_best":0.72,"vpil_source":"derived_dc","vpil_q":"lt","bw3db_ghz":null,"bw_q":"","bw_method":"unspecified","max_baud_gbd":128,"max_line_rate_gbps":null,"max_net_rate_gbps":300,"modulation_format":"OOK 128 GBd (net 117 Gb/s, KP4-FEC) and PAM-4 106 GBd (net 200 Gb/s, HD-FEC) driver-less; PAM-4 112 GBd (net 212 Gb/s,…","length_q":"lt","evidence_ref":"data/evidence/li2024.yaml","notes":"VERSION: journal version of the OFC 2023 post-deadline work (same device and figures as eltes2023-a; both papers keep their own rows, no shared physical_device_id). BTO MZMs \"integrated into the commercial 8-inch SiPh process\" (foundry_nat…"},{"device_id":"li2024-o","paper_id":"li2024","year":2023,"platform":"BTO","eo_material":"barium_titanate","device_class":"mzm","row_kind":"device","band":"o_band","wavelength_nm":1310,"length_mm":2,"integration":"foundry_native","waveguide_platform":"","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":124,"max_line_rate_gbps":null,"max_net_rate_gbps":250,"modulation_format":"PAM-4 106 GBd (net 200 Gb/s, KP4-FEC, 10 km), PAM-6 100 GBd (net 234 Gb/s, HD-FEC, 10 km), PAM-4 124 GBd (net 232 Gb/s,…","length_q":"lt","evidence_ref":"data/evidence/li2024.yaml","notes":"O-band design of the same MZM family (\"designs for C- and O-band are similar in fundamental, with adjustments for their effective refractive indexes\", p.2); the paper says the Vpi (3.6 V), VpiL and IL (about 2 dB) discussed in Section II a…"},{"device_id":"li2024-ps","paper_id":"li2024","year":2023,"platform":"BTO","eo_material":"barium_titanate","device_class":"phase_shifter","row_kind":"device","band":"","wavelength_nm":null,"length_mm":1.5,"integration":"","waveguide_platform":"","vpi_convention":"unspecified","vpil_best":0.48,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/li2024.yaml","notes":"Vpi test structure of Fig. 1c (also eltes2023 Fig. 1c): 1.5 mm HSPS, AC Vpi at 10 MHz from the average-transmission method of ref. 22. Fig. 1c is an average-transmission (MZM) measurement versus Vpp; the arm drive (one arm or both) is not…"},{"device_id":"li2025a-a","paper_id":"li2025a","year":2024,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":null,"length_mm":2.8,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"mzm_push_pull","vpil_best":1.23,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":67,"bw_q":"gt","bw_method":"eo_s21","max_baud_gbd":100,"max_line_rate_gbps":200,"max_net_rate_gbps":null,"modulation_format":"OOK 100 Gb/s; PAM-4 200 Gb/s; PAM-8 150 Gb/s (all 2.0 Vpp; ER 4.5 / 3.8 / 3.6 dB)","length_q":"","evidence_ref":"data/evidence/li2025a.yaml","notes":"Vpi wavelength not stated; EO responses at 1550.5-1556.1 nm. Simulated EO bandwidth above 320 GHz not entered. Optical 3 dB bandwidth about 6 nm. Slow-light excess loss about 0.6 dB/mm over a straight reference waveguide (Fig. 3(f)); total…"},{"device_id":"li2025b-a","paper_id":"li2025b","year":2025,"platform":"AlGaAs","eo_material":"algaas_gaas","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1540,"length_mm":20.8,"integration":"monolithic","waveguide_platform":"algaas","vpi_convention":"mzm_push_pull","vpil_best":112.944,"vpil_source":"derived_dc","vpil_q":"","bw3db_ghz":0.8,"bw_q":"approx","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/li2025b.yaml","notes":"Perpendicularly meandering MZM, arms 2.5 cm and 2.36 cm (asymmetric, 1.4 mm length difference), 1 mm x 3.1 mm footprint. True push-pull from r41 orientation: one arm along [011], the other along [01-1], same vertical field. Vpi is a model…"},{"device_id":"li2025b-b","paper_id":"li2025b","year":2025,"platform":"AlGaAs","eo_material":"algaas_gaas","device_class":"ring","row_kind":"device","band":"c_band","wavelength_nm":null,"length_mm":null,"integration":"monolithic","waveguide_platform":"algaas","vpi_convention":"resonance_tuning_derived","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":2,"bw_q":"approx","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/li2025b.yaml","notes":"Racetrack on the same chip, sides along the crystal axes, used to calibrate the field and propagation loss; quadratic EO term does not cancel here. Vpi is the voltage shifting the transmission from maximum to minimum (lambda_pi/delta lambd…"},{"device_id":"li2025b-c","paper_id":"li2025b","year":2025,"platform":"AlGaAs","eo_material":"algaas_gaas","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1538.5,"length_mm":null,"integration":"monolithic","waveguide_platform":"algaas","vpi_convention":"mzm_single_arm","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/li2025b.yaml","notes":"Single-arm meandering MZM (SeM-MZM) with the meandering arm along [011]; control for the push-pull effect. Meander arm lengths designed nominally equal for the two controls (values not stated); opposite DC-bias slopes of the AM change (Fig…"},{"device_id":"li2025b-d","paper_id":"li2025b","year":2025,"platform":"AlGaAs","eo_material":"algaas_gaas","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1538.5,"length_mm":null,"integration":"monolithic","waveguide_platform":"algaas","vpi_convention":"mzm_single_arm","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/li2025b.yaml","notes":"Single-arm meandering MZM (SeM-MZM) with the meandering arm along [01-1]; control for the push-pull effect. Meander arm lengths designed nominally equal for the two controls (values not stated); opposite DC-bias slopes of the AM change (Fi…"},{"device_id":"li2026-a","paper_id":"li2026","year":2026,"platform":"TFLT","eo_material":"lithium_tantalate","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":8,"integration":"monolithic","waveguide_platform":"ltoi_rib","vpi_convention":"mzm_push_pull","vpil_best":4,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":110,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":208,"max_line_rate_gbps":564,"max_net_rate_gbps":460,"modulation_format":"PAM4 (up to 208 GBd), PAM6 (up to 192 GBd), PAM8 (up to 188 GBd), all below 25% SD-FEC BER limit; PAM4 below KP4 up to…","length_q":"","evidence_ref":"data/evidence/li2026.yaml","notes":"Headline 8 mm suspended-electrode device. S21 of the CPW -4.3 dB at 120 GHz; S11 < -20 dB. Fiber-to-fiber coupling loss typically -5.2 dB (coupling only, not modulator insertion loss); modulator IL not reported; ER only visible in Fig. 2(a…"},{"device_id":"li2026a-a","paper_id":"li2026a","year":2026,"platform":"TFLT","eo_material":"lithium_tantalate","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":18,"integration":"other","waveguide_platform":"ltoi_rib","vpi_convention":"mzm_push_pull","vpil_best":2.8,"vpil_source":"reported_dc","vpil_q":"approx","bw3db_ghz":67,"bw_q":"","bw_method":"unspecified","max_baud_gbd":208,"max_line_rate_gbps":552,"max_net_rate_gbps":437,"modulation_format":"PAM4 (up to 208 GBd), PAM6 (up to 192 GBd), PAM8 (up to 184 GBd), all below 25% SD-FEC BER limit","length_q":"","evidence_ref":"data/evidence/li2026a.yaml","notes":"OFC 2026 conference version of the LT-on-fused-silica MZM; numbers differ from the later arXiv version (li2026ba: 64 GHz, 1.53 V, 440.6 Gbit/s). Text-only source: all figures unavailable. Quoted abstract: 3 dB EO bandwidth 67 GHz and modul…"},{"device_id":"li2026a-b","paper_id":"li2026a","year":2026,"platform":"TFLT","eo_material":"lithium_tantalate","device_class":"mzm","row_kind":"device","band":"o_band","wavelength_nm":1300,"length_mm":18,"integration":"other","waveguide_platform":"ltoi_rib","vpi_convention":"mzm_push_pull","vpil_best":2.3,"vpil_source":"reported_dc","vpil_q":"approx","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/li2026a.yaml","notes":"OFC 2026 conference version of the LT-on-fused-silica MZM; numbers differ from the later arXiv version (li2026ba: 64 GHz, 1.53 V, 440.6 Gbit/s). Text-only source: all figures unavailable. O-band row carries only the quasi-DC efficiency; no…"},{"device_id":"li2026aa-a","paper_id":"li2026aa","year":2026,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"o_band","wavelength_nm":1310,"length_mm":9,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"mzm_push_pull","vpil_best":1.92,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":100,"bw_q":"approx","bw_method":"eo_s21","max_baud_gbd":170,"max_line_rate_gbps":260,"max_net_rate_gbps":null,"modulation_format":"OOK up to 170 Gb/s; PAM-4 up to 260 Gb/s; BER below HD-FEC 3.8e-3","length_q":"","evidence_ref":"data/evidence/li2026aa.yaml","notes":"Load 38 ohm; ground width 150 um. Fig. 4(a) eye diagram is 160 Gb/s OOK."},{"device_id":"li2026aa-b","paper_id":"li2026aa","year":2026,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"e_band","wavelength_nm":1450,"length_mm":9,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"mzm_push_pull","vpil_best":2.39,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":67,"bw_q":"gt","bw_method":"eo_s21","max_baud_gbd":170,"max_line_rate_gbps":260,"max_net_rate_gbps":null,"modulation_format":"OOK up to 170 Gb/s; PAM-4 up to 260 Gb/s; BER below HD-FEC 3.8e-3","length_q":"","evidence_ref":"data/evidence/li2026aa.yaml","notes":"Bandwidth limited by the 67 GHz VNA with a commercial photodiode."},{"device_id":"li2026aa-c","paper_id":"li2026aa","year":2026,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"s_band","wavelength_nm":1485,"length_mm":9,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"mzm_push_pull","vpil_best":2.48,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":100,"bw_q":"approx","bw_method":"eo_s21","max_baud_gbd":170,"max_line_rate_gbps":260,"max_net_rate_gbps":null,"modulation_format":"OOK up to 170 Gb/s; PAM-4 up to 260 Gb/s; BER below HD-FEC 3.8e-3","length_q":"","evidence_ref":"data/evidence/li2026aa.yaml","notes":"About 100 GHz crossing read near the 110 GHz LCA limit. Text writes 1484 nm once for this S-band point."},{"device_id":"li2026aa-d","paper_id":"li2026aa","year":2026,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":9,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"mzm_push_pull","vpil_best":2.61,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":100,"bw_q":"approx","bw_method":"eo_s21","max_baud_gbd":180,"max_line_rate_gbps":280,"max_net_rate_gbps":null,"modulation_format":"OOK up to 180 Gb/s; PAM-4 up to 280 Gb/s; BER below HD-FEC 3.8e-3","length_q":"","evidence_ref":"data/evidence/li2026aa.yaml","notes":"Z0 about 42 ohm and nRF 2.13 are simulated design values; load 38 ohm, below Z0 by design; ng equals nRF."},{"device_id":"li2026aa-e","paper_id":"li2026aa","year":2026,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"l_band","wavelength_nm":1590,"length_mm":9,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"mzm_push_pull","vpil_best":2.74,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":100,"bw_q":"approx","bw_method":"eo_s21","max_baud_gbd":180,"max_line_rate_gbps":280,"max_net_rate_gbps":null,"modulation_format":"OOK up to 180 Gb/s; PAM-4 up to 280 Gb/s; BER below HD-FEC 3.8e-3","length_q":"","evidence_ref":"data/evidence/li2026aa.yaml","notes":"About 100 GHz crossing read near the 110 GHz LCA limit."},{"device_id":"li2026aa-f","paper_id":"li2026aa","year":2026,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"u_band","wavelength_nm":1653,"length_mm":9,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"mzm_push_pull","vpil_best":2.89,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":67,"bw_q":"gt","bw_method":"eo_s21","max_baud_gbd":170,"max_line_rate_gbps":240,"max_net_rate_gbps":null,"modulation_format":"OOK up to 170 Gb/s; PAM-4 up to 240 Gb/s; BER below HD-FEC 3.8e-3","length_q":"","evidence_ref":"data/evidence/li2026aa.yaml","notes":"Bandwidth limited by the 67 GHz VNA with a commercial photodiode."},{"device_id":"li2026aa-g","paper_id":"li2026aa","year":2026,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"nir_above_u","wavelength_nm":1970,"length_mm":9,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"mzm_push_pull","vpil_best":3.9,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":50,"bw_q":"gt","bw_method":"eo_s21","max_baud_gbd":150,"max_line_rate_gbps":170,"max_net_rate_gbps":null,"modulation_format":"OOK up to 150 Gb/s; PAM-4 up to 170 Gb/s (85 GBd); BER below HD-FEC 3.8e-3","length_q":"","evidence_ref":"data/evidence/li2026aa.yaml","notes":"GeSn photodiode (above 40 GHz) limits the measurement; simulation suggests about 80 GHz. SSC coupling loss 0.82 dB per facet at 1970 nm (p.4, Fig. 3(a))."},{"device_id":"li2026aa-h","paper_id":"li2026aa","year":2026,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"nir_above_u","wavelength_nm":2000,"length_mm":9,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"mzm_push_pull","vpil_best":3.94,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":50,"bw_q":"gt","bw_method":"eo_s21","max_baud_gbd":140,"max_line_rate_gbps":150,"max_net_rate_gbps":null,"modulation_format":"OOK up to about 140 Gb/s (Fig. 4(d) read); PAM-4 up to 150 Gb/s; BER below HD-FEC 3.8e-3","length_q":"","evidence_ref":"data/evidence/li2026aa.yaml","notes":"GeSn photodiode limits the measurement; simulation suggests about 80 GHz. Coupling loss 2.21 dB per facet at 2000 nm."},{"device_id":"li2026b-a","paper_id":"li2026b","year":2026,"platform":"GeSi EAM","eo_material":"germanium_silicon_eam","device_class":"eam","row_kind":"device","band":"c_band","wavelength_nm":1563,"length_mm":null,"integration":"monolithic","waveguide_platform":"","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":67,"bw_q":"gt","bw_method":"eo_s21","max_baud_gbd":160,"max_line_rate_gbps":null,"max_net_rate_gbps":300,"modulation_format":"PAM4 160 GBd, BU-GRU equalizer, 35 taps: BER 4.22e-3 back-to-back (RoP 5 dBm) and 4.36e-3 after 100 m SMF, below the 6.…","length_q":"","evidence_ref":"data/evidence/li2026b.yaml","notes":"EO response at 1.4 V reverse bias to about 67 GHz (Fig. 1(b)). Authors state above 67 GHz (abstract, p.2); Fig. 1(b) EAM trace has a notch to about -3.2 dB near 46.6 GHz (below -2 dB from about 45 to 48 GHz) and ends near -2 dB at 67 GHz.…"},{"device_id":"li2026ba-a","paper_id":"li2026ba","year":2026,"platform":"TFLT","eo_material":"lithium_tantalate","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":18,"integration":"bonded_heterogeneous","waveguide_platform":"ltoi_rib","vpi_convention":"mzm_push_pull","vpil_best":2.76,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":64,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":208,"max_line_rate_gbps":552,"max_net_rate_gbps":440.6,"modulation_format":"PAM4 (up to 208 GBd), PAM6 (up to 192 GBd), PAM8 (up to 184 GBd), all below 25% SD-FEC BER limit; PAM4 below KP4 up to…","length_q":"","evidence_ref":"data/evidence/li2026ba.yaml","notes":"arXiv v1 (2026-04-16). Optical power: ECDL 17.8 dBm, 3.7 dBm in the fiber after the MZM (not on-chip). Fiber-to-fiber coupling loss ~12 dB with unpolished laser-diced facets (coupling only; modulator IL not reported). S21 -8.2 dB at 120 GH…"},{"device_id":"li2026ba-b","paper_id":"li2026ba","year":2026,"platform":"TFLT","eo_material":"lithium_tantalate","device_class":"mzm","row_kind":"device","band":"o_band","wavelength_nm":1300,"length_mm":18,"integration":"bonded_heterogeneous","waveguide_platform":"ltoi_rib","vpi_convention":"mzm_push_pull","vpil_best":2.19,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/li2026ba.yaml","notes":"O-band operating point of the same device. EO response at 1310 nm shows similar characteristics to C-band (Fig. 3(d)) but no O-band bandwidth is stated; paper notes calibration uncertainty of the O-band photodiode."},{"device_id":"lin2025-a","paper_id":"lin2025","year":2025,"platform":"TFLT","eo_material":"lithium_tantalate","device_class":"mzm","row_kind":"device","band":"","wavelength_nm":null,"length_mm":16,"integration":"monolithic","waveguide_platform":"ltoi_rib","vpi_convention":"mzm_push_pull","vpil_best":2.7,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":40,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/lin2025.yaml","notes":"Accepted unedited manuscript (Nat Commun 17, 3211 (2026)); arXiv 2505.04755 is the earlier version. Wavelength of the Vpi/EO measurements not stated in the main text. Cu thin-film resistivity 2.04 uOhm cm; microwave loss of a 16 mm test CP…"},{"device_id":"lin2025-b","paper_id":"lin2025","year":2025,"platform":"TFLT","eo_material":"lithium_tantalate","device_class":"mzm","row_kind":"device","band":"","wavelength_nm":null,"length_mm":6,"integration":"monolithic","waveguide_platform":"ltoi_rib","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":100,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/lin2025.yaml","notes":"6 mm device with the same 6 um gap electrode design. Vpi, ER and wavelength not reported for this length. 15 h bias drift 0.4 dB at 1.75 mW on-chip power measured on a 6 mm device (Fig. 3(c))."},{"device_id":"lin2025-c","paper_id":"lin2025","year":2025,"platform":"TFLT","eo_material":"lithium_tantalate","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":null,"integration":"monolithic","waveguide_platform":"ltoi_rib","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":208,"max_line_rate_gbps":540,"max_net_rate_gbps":423,"modulation_format":"PAM4 (up to 208 GBd, 416 Gbit/s); PAM8 (up to 180 GBd, 540 Gbit/s); BER below 25% SD-FEC","length_q":"","evidence_ref":"data/evidence/lin2025.yaml","notes":"System-demonstration row: the paper does not say which modulator length was used for the IMDD experiment (6 mm and 16 mm devices are both characterized), so no device metrics are attached. Output fiber power 5.6 dBm at quadrature; PAM4 rat…"},{"device_id":"lin2025a-mzi","paper_id":"lin2025a","year":2025,"platform":"BTO","eo_material":"barium_titanate","device_class":"phase_shifter","row_kind":"device","band":"","wavelength_nm":null,"length_mm":3.5,"integration":"monolithic","waveguide_platform":"bto_on_oxide_substrate","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/lin2025a.yaml","notes":"Resonance shift of the unbalanced MZI vs DC voltage 0 to 20 V (Fig. 2(c,d)). No Vpi reported, none entered: (FSR/2)/tuning gives about 31 V (41.3 pm/V) or 22 V (5 V point, 57.6 pm/V), extrapolated beyond the 20 V measured range, assuming o…"},{"device_id":"lin2026-a","paper_id":"lin2026","year":2026,"platform":"SiPh","eo_material":"silicon_plasma_dispersion","device_class":"ring","row_kind":"device","band":"c_band","wavelength_nm":null,"length_mm":null,"integration":"foundry_native","waveguide_platform":"","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":90,"bw_q":"approx","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":224,"max_net_rate_gbps":null,"modulation_format":"PAM4 optical eyes at 200 and 224 Gb/s, no equalization (as stated), -6 dB detuning; TDECQ 1.58 dB (200 Gb/s) and 2.94 d…","length_q":"","evidence_ref":"data/evidence/lin2026.yaml","notes":"Version: OFC 2026 3-page paper. Ring radius 5 um (p.2); resonance dip near 1556.3 nm in Fig. 2(a) (operating wavelength is detuned, so wavelength_nm is empty); band from that figure. Measured EO response is the black trace of Fig. 2(d), no…"},{"device_id":"lin2026a-a","paper_id":"lin2026a","year":2026,"platform":"TFLT","eo_material":"lithium_tantalate","device_class":"mzm","row_kind":"device","band":"uv","wavelength_nm":375,"length_mm":0.2,"integration":"monolithic","waveguide_platform":"ltoi_rib","vpi_convention":"mzm_push_pull","vpil_best":0.085,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":0.922,"bw_q":"gt","bw_method":"link_eoe","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/lin2026a.yaml","notes":"Vpi 4.2 V measured with a 400 kHz triangular drive (quasi-DC, avoids drift) as the voltage swing between minimum and maximum transmission; push-pull GSG convention stated on p.4 and in the Fig. 4 caption. VpiL 85 +- 2 mV cm uses the 200 um…"},{"device_id":"liu2021-a","paper_id":"liu2021","year":2021,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":5,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"mzm_push_pull","vpil_best":1.7,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":67,"bw_q":"gt","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/liu2021.yaml","notes":"Vpi from a 100 kHz triangular sweep (Fig. 4(c)); VpiL 1.7 V cm is the authors product of 3.4 V and 5 mm. Authors do not state push-pull or the Vpi convention: entered by geometry (one arm per gap of the G-S-G line, x-cut) with basis derive…"},{"device_id":"liu2023-a","paper_id":"liu2023","year":2023,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"resonator","row_kind":"device","band":"c_band","wavelength_nm":1531,"length_mm":0.1,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":36,"bw_q":"approx","bw_method":"photon_lifetime_estimate","max_baud_gbd":80,"max_line_rate_gbps":100,"max_net_rate_gbps":null,"modulation_format":"OOK 40 and 80 Gb/s (dynamic ER at 40 Gb/s given); PAM4 100 Gb/s (50 GBd), eye open","length_q":"approx","evidence_ref":"data/evidence/liu2023.yaml","notes":"Resonant 2x2 Fabry-Perot cavity between two multimode waveguide gratings (MWG reflectors, reflectivity about 0.85 designed), G-S electrodes beside the cavity. Chip footprint 0.3 x 2.8 mm^2 for four channels; WDM filter excess loss below 0.…"},{"device_id":"liu2023-b","paper_id":"liu2023","year":2023,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"resonator","row_kind":"device","band":"c_band","wavelength_nm":1551,"length_mm":0.1,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":31,"bw_q":"approx","bw_method":"photon_lifetime_estimate","max_baud_gbd":80,"max_line_rate_gbps":100,"max_net_rate_gbps":null,"modulation_format":"OOK 40 and 80 Gb/s (dynamic ER at 40 Gb/s given); PAM4 100 Gb/s (50 GBd), eye open","length_q":"approx","evidence_ref":"data/evidence/liu2023.yaml","notes":"Resonant 2x2 Fabry-Perot cavity between two multimode waveguide gratings (MWG reflectors, reflectivity about 0.85 designed), G-S electrodes beside the cavity. Chip footprint 0.3 x 2.8 mm^2 for four channels; WDM filter excess loss below 0.…"},{"device_id":"liu2023-c","paper_id":"liu2023","year":2023,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"resonator","row_kind":"device","band":"l_band","wavelength_nm":1571,"length_mm":0.1,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":31,"bw_q":"approx","bw_method":"photon_lifetime_estimate","max_baud_gbd":80,"max_line_rate_gbps":100,"max_net_rate_gbps":null,"modulation_format":"OOK 40 and 80 Gb/s (dynamic ER at 40 Gb/s given); PAM4 100 Gb/s (50 GBd), eye open","length_q":"approx","evidence_ref":"data/evidence/liu2023.yaml","notes":"Resonant 2x2 Fabry-Perot cavity between two multimode waveguide gratings (MWG reflectors, reflectivity about 0.85 designed), G-S electrodes beside the cavity. Chip footprint 0.3 x 2.8 mm^2 for four channels; WDM filter excess loss below 0.…"},{"device_id":"liu2023-d","paper_id":"liu2023","year":2023,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"resonator","row_kind":"device","band":"l_band","wavelength_nm":1591,"length_mm":0.1,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":29,"bw_q":"approx","bw_method":"photon_lifetime_estimate","max_baud_gbd":80,"max_line_rate_gbps":80,"max_net_rate_gbps":null,"modulation_format":"OOK 40 and 80 Gb/s; PAM4 100 Gb/s (50 GBd) eye degraded (grating coupler and EDFA roll-off near 1600 nm)","length_q":"approx","evidence_ref":"data/evidence/liu2023.yaml","notes":"Resonant 2x2 Fabry-Perot cavity between two multimode waveguide gratings (MWG reflectors, reflectivity about 0.85 designed), G-S electrodes beside the cavity. Chip footprint 0.3 x 2.8 mm^2 for four channels; WDM filter excess loss below 0.…"},{"device_id":"liu2025-a","paper_id":"liu2025","year":2024,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":7,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"mzm_push_pull","vpil_best":1.33,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":110,"bw_q":"gt","bw_method":"eo_s21","max_baud_gbd":130,"max_line_rate_gbps":390,"max_net_rate_gbps":null,"modulation_format":"NRZ, PAM4, PAM6, PAM8 at 112 and 130 Gbaud","length_q":"","evidence_ref":"data/evidence/liu2025.yaml","notes":"Same physical 7 mm device as liu2025-b, measured at 1550 nm. Fig. 8(a) transmission sweep at 1 MHz; drive and push-pull are not stated by the authors (GSG layout with an arm in each gap, Fig. 1(b)). Measured 3 dB bandwidth is a bound (far…"},{"device_id":"liu2025-b","paper_id":"liu2025","year":2024,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"o_band","wavelength_nm":1310,"length_mm":7,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"mzm_push_pull","vpil_best":1.08,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":110,"bw_q":"gt","bw_method":"eo_s21","max_baud_gbd":130,"max_line_rate_gbps":390,"max_net_rate_gbps":null,"modulation_format":"NRZ, PAM4, PAM6, PAM8 at 112 and 130 Gbaud","length_q":"","evidence_ref":"data/evidence/liu2025.yaml","notes":"Same physical 7 mm device as liu2025-a, measured at 1310 nm; RF index n_rf is entered on liu2025-a only; RF loss and Z0 are not entered. Drive and push-pull not stated by the authors. Vpi 1.54 V (1 MHz sweep, Fig. 8(a)). Measured 3 dB band…"},{"device_id":"liu2025b-a","paper_id":"liu2025b","year":2025,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":10,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"mzm_push_pull","vpil_best":2.92,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":110,"bw_q":"gt","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/liu2025b.yaml","notes":"Chip-level 10 mm modulator from the 4-inch wafer (wafer yield 6 of 12 chips with bandwidth over 110 GHz and Vpi under 3 V, Fig. 5). 3 dB bandwidth is a bound (2.3 dB roll-off at 110 GHz); roll-off reference not stated (Fig. 4(b) normalised…"},{"device_id":"liu2025b-b","paper_id":"liu2025b","year":2025,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"","wavelength_nm":null,"length_mm":null,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":95,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":190,"max_line_rate_gbps":380,"max_net_rate_gbps":null,"modulation_format":"PAM4 at 190 Gbaud","length_q":"","evidence_ref":"data/evidence/liu2025b.yaml","notes":"Packaged module (Fig. 6). Whether it is the same chip as liu2025b-a is not stated, so Vpi, length and geometry are left empty (Table 1 gives one combined 'this work' line: IL 6.5 dB, Vpi 2.92 V, 10 mm, over 110 GHz, 190 Gbaud PAM4). Wire-b…"},{"device_id":"liu2025c-a","paper_id":"liu2025c","year":2025,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"free_space","row_kind":"device","band":"nir_below_o","wavelength_nm":787,"length_mm":null,"integration":"bonded_heterogeneous","waveguide_platform":"other","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":0.005,"bw_q":"approx","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/liu2025c.yaml","notes":"Modulation depth M = 1 - Tmin/Tmax of 43% at 787 nm under a +-50 V square-wave drive (no column; sim 798.5 and 800.6 nm M-shaped peaks). 3 dB bandwidth about 5 MHz measured with a lock-in and stroboscopic delayed sampling on a pulsed 50 kH…"},{"device_id":"liu2025d-a","paper_id":"liu2025d","year":2025,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"ring","row_kind":"device","band":"c_band","wavelength_nm":1554.4,"length_mm":null,"integration":"monolithic","waveguide_platform":"","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":1,"max_line_rate_gbps":2,"max_net_rate_gbps":null,"modulation_format":"QPSK on LFM carrier, 1 GBd, 2 Gb/s, wireless link at 23, 33 and 43 cm; EVM 15.5, 16.1, 16.8 %","length_q":"","evidence_ref":"data/evidence/liu2025d.yaml","notes":"Antenna + ring on one chip; no geometry, wafer or fabrication details in the paper. No bandwidth entered: 1.5 GHz in Fig. 2(f) is the 3 dB full width of an RF band-pass peak centred at 30.5 GHz (RF scanned 27-34 GHz; read from the dashed f…"},{"device_id":"liu2026a-a","paper_id":"liu2026a","year":2026,"platform":"SiPh","eo_material":"silicon_plasma_dispersion","device_class":"ring","row_kind":"device","band":"o_band","wavelength_nm":1313,"length_mm":null,"integration":"foundry_native","waveguide_platform":"","vpi_convention":"resonance_tuning_derived","vpil_best":0.538,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":83,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":140,"max_line_rate_gbps":140,"max_net_rate_gbps":null,"modulation_format":"NRZ 140 GBd (PRBS15, Vpp 1.2 V, 16 FFE taps, 0 dBm received, dynamic ER 1.94 dB); PAM4 64 GBd (-3 dBm received, dynamic…","length_q":"","evidence_ref":"data/evidence/liu2026a.yaml","notes":"Same MRM as liu2026a-b; this row is the 0 V point. 3 dB EO bandwidth at 0 V is 83, 97 and above 110 GHz at detuned operating points of 6, 5 and 4 dB IL (Fig. 1c); the 83 GHz point is the -6 dB point used in the link demo. Bandwidth, Q, FSR…"},{"device_id":"liu2026a-b","paper_id":"liu2026a","year":2026,"platform":"SiPh","eo_material":"silicon_plasma_dispersion","device_class":"ring","row_kind":"device","band":"o_band","wavelength_nm":1313,"length_mm":null,"integration":"foundry_native","waveguide_platform":"","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":110,"bw_q":"gt","bw_method":"eo_s21","max_baud_gbd":160,"max_line_rate_gbps":280,"max_net_rate_gbps":null,"modulation_format":"NRZ 160 GBd (PRBS15, Vpp 2.7 V, 32 FFE taps, 0 dBm received, dynamic ER 1.98 dB); PAM4 140 GBd = 280 Gb/s (-3 dBm recei…","length_q":"","evidence_ref":"data/evidence/liu2026a.yaml","notes":"Same MRM as liu2026a-a; this row is the -3 V point. At -3 V all three detuned operating points (6, 5, 4 dB) exceed 110 GHz; no -3 dB crossing within the 110 GHz axis. ER 3.50 dB is the dynamic ER of the 280 Gb/s PAM4 eye. 280 Gb/s PAM4 is…"},{"device_id":"liu2026b-a","paper_id":"liu2026b","year":2026,"platform":"SiPh","eo_material":"silicon_plasma_dispersion","device_class":"mzm","row_kind":"device","band":"o_band","wavelength_nm":null,"length_mm":null,"integration":"foundry_native","waveguide_platform":"soi_rib","vpi_convention":"unspecified","vpil_best":1.14,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":67,"bw_q":"gt","bw_method":"eo_s21","max_baud_gbd":192,"max_line_rate_gbps":192,"max_net_rate_gbps":null,"modulation_format":"OOK (NRZ), PRBS7, eye diagrams at 64, 96, 112, 128, 160 and 192 GBd; dynamic ER 3.67, 2.87, 2.51, 2.23, 1.68, 1.17 dB;…","length_q":"","evidence_ref":"data/evidence/liu2026b.yaml","notes":"Total length not stated: three 950 um phase shifters (2.85 mm by arithmetic, equal to 1.14 V cm / 4 V), so length_mm is empty. Vpi 4 V is the average of two single-junction bypass measurements at -2 V bias; VpiL 1.14 is the authors' value…"},{"device_id":"liu2026c-a","paper_id":"liu2026c","year":2026,"platform":"SiPh","eo_material":"silicon_plasma_dispersion","device_class":"mzm","row_kind":"device","band":"o_band","wavelength_nm":1310,"length_mm":2,"integration":"foundry_native","waveguide_platform":"soi_rib","vpi_convention":"unspecified","vpil_best":0.9,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":80,"bw_q":"gt","bw_method":"eo_s21","max_baud_gbd":128,"max_line_rate_gbps":280,"max_net_rate_gbps":null,"modulation_format":"NRZ 64 and 128 GBd (PRBS7, dynamic ER 5.08 and 2.21 dB); PAM4 128 and 256 Gb/s (PRBS7, TDECQ 0.33 and 2.88 dB); PAM6 28…","length_q":"","evidence_ref":"data/evidence/liu2026c.yaml","notes":"Tabbed periodic electrode (tab pairs act as capacitive elements per the authors) on a series push-pull GS electrode; electrode type cl_twe is the closest enum. Vpi 4.5 V is the DC voltage of the transmission null in Fig. 2(b); Vpi*L 0.9 V…"},{"device_id":"liu2026c-b","paper_id":"liu2026c","year":2026,"platform":"SiPh","eo_material":"silicon_plasma_dispersion","device_class":"mzm","row_kind":"device","band":"","wavelength_nm":null,"length_mm":2,"integration":"foundry_native","waveguide_platform":"soi_rib","vpi_convention":"unspecified","vpil_best":1.18,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":60,"bw_q":"approx","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/liu2026c.yaml","notes":"Reference device on the same chip: identical optical and doping design, differs only in the electrode (Fig. 2a), 2 mm, same GS pad layout. 1 dB EO bandwidth 39 GHz at -3 V. 3 dB bandwidth is not stated: the measured trace is read to first…"},{"device_id":"liu2026d-a","paper_id":"liu2026d","year":2026,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"visible","wavelength_nm":445,"length_mm":1.35,"integration":"foundry_native","waveguide_platform":"lnoi_rib","vpi_convention":"mzm_push_pull","vpil_best":0.83,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/liu2026d.yaml","notes":"Design 1 blue/green, operating point 445 nm. VpiL 0.83 V cm (Table 1, EO section length 1.35 mm; Vpi = VpiL / 0.135 cm by the build step) is extracted from high-pass-filter fits of Vpi(f_mod, T) taken at 10-100 kHz, because dielectric rela…"},{"device_id":"liu2026d-b","paper_id":"liu2026d","year":2026,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"visible","wavelength_nm":461,"length_mm":1.35,"integration":"foundry_native","waveguide_platform":"lnoi_rib","vpi_convention":"mzm_push_pull","vpil_best":0.86,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":26.5,"bw_q":"gt","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/liu2026d.yaml","notes":"Design 1 blue/green, operating point 461 nm. VpiL 0.86 V cm (Table 1, EO section length 1.35 mm; Vpi = VpiL / 0.135 cm by the build step) is extracted from high-pass-filter fits of Vpi(f_mod, T) taken at 10-100 kHz, because dielectric rela…"},{"device_id":"liu2026d-c","paper_id":"liu2026d","year":2026,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"visible","wavelength_nm":488,"length_mm":1.35,"integration":"foundry_native","waveguide_platform":"lnoi_rib","vpi_convention":"mzm_push_pull","vpil_best":0.91,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":26.5,"bw_q":"gt","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/liu2026d.yaml","notes":"Design 1 blue/green, operating point 488 nm. VpiL 0.91 V cm (Table 1, EO section length 1.35 mm; Vpi = VpiL / 0.135 cm by the build step) is extracted from high-pass-filter fits of Vpi(f_mod, T) taken at 10-100 kHz, because dielectric rela…"},{"device_id":"liu2026d-d","paper_id":"liu2026d","year":2026,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"visible","wavelength_nm":520,"length_mm":1.35,"integration":"foundry_native","waveguide_platform":"lnoi_rib","vpi_convention":"mzm_push_pull","vpil_best":1,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":26.5,"bw_q":"gt","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/liu2026d.yaml","notes":"Design 1 blue/green, operating point 520 nm. VpiL 1.0 V cm (Table 1, EO section length 1.35 mm; Vpi = VpiL / 0.135 cm by the build step) is extracted from high-pass-filter fits of Vpi(f_mod, T) taken at 10-100 kHz, because dielectric relax…"},{"device_id":"liu2026d-e","paper_id":"liu2026d","year":2026,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"visible","wavelength_nm":594,"length_mm":1.35,"integration":"foundry_native","waveguide_platform":"lnoi_rib","vpi_convention":"mzm_push_pull","vpil_best":1.34,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":26.5,"bw_q":"gt","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/liu2026d.yaml","notes":"Design 2 orange/red, operating point 594 nm. VpiL 1.34 V cm (Table 1, EO section length 1.35 mm; Vpi = VpiL / 0.135 cm by the build step) is extracted from high-pass-filter fits of Vpi(f_mod, T) taken at 10-100 kHz, because dielectric rela…"},{"device_id":"liu2026d-f","paper_id":"liu2026d","year":2026,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"visible","wavelength_nm":640,"length_mm":1.35,"integration":"foundry_native","waveguide_platform":"lnoi_rib","vpi_convention":"mzm_push_pull","vpil_best":1.56,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":26.5,"bw_q":"gt","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/liu2026d.yaml","notes":"Design 2 orange/red, operating point 640 nm. VpiL 1.56 V cm (Table 1, EO section length 1.35 mm; Vpi = VpiL / 0.135 cm by the build step) is extracted from high-pass-filter fits of Vpi(f_mod, T) taken at 10-100 kHz, because dielectric rela…"},{"device_id":"liu2026d-g","paper_id":"liu2026d","year":2026,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"nir_below_o","wavelength_nm":940,"length_mm":1.35,"integration":"foundry_native","waveguide_platform":"lnoi_rib","vpi_convention":"mzm_push_pull","vpil_best":2.81,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":26.5,"bw_q":"gt","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/liu2026d.yaml","notes":"Design 3 NIR, operating point 940 nm. VpiL 2.81 V cm (Table 1, EO section length 1.35 mm; Vpi = VpiL / 0.135 cm by the build step) is extracted from high-pass-filter fits of Vpi(f_mod, T) taken at 10-100 kHz, because dielectric relaxation…"},{"device_id":"liu2026d-h","paper_id":"liu2026d","year":2026,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"nir_below_o","wavelength_nm":875,"length_mm":1.35,"integration":"foundry_native","waveguide_platform":"lnoi_rib","vpi_convention":"mzm_push_pull","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":10,"max_line_rate_gbps":10,"max_net_rate_gbps":null,"modulation_format":"NRZ-OOK 10 Gbit/s PRBS9 eye (SNR 9.4 dB, 10 million symbols); 10 MHz pulse train, 100 ps nominal, FWHM 117 ps, ER 25 dB…","length_q":"","evidence_ref":"data/evidence/liu2026d.yaml","notes":"Same NIR design as liu2026d-g (not stated to be the same physical chip), operated at 875 nm (Toptica DL pro CW laser) for the bias-stable demonstrations: ER median 25 dB over 93 min under closed-loop TO bias (std 0.65 dB, Fig. 5(a)); pulse…"},{"device_id":"lotkov2024-a","paper_id":"lotkov2024","year":2024,"platform":"Other","eo_material":"transparent_conducting_oxide","device_class":"eam","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":0.0093,"integration":"monolithic","waveguide_platform":"sin","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":1.05,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/lotkov2024.yaml","notes":"IL scope is uncertain (audit F4, 2026-10-03): abstract and conclusion give 5.7 dB (at -7 V), p.3 gives 6.3 dB and 'on-chip IL = 14.6 dB' for the same device, and the authors never say what each excludes; il_onchip_db holds the headline 5.7…"},{"device_id":"lu2020-a","paper_id":"lu2020","year":2020,"platform":"Polymer","eo_material":"eo_polymer","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":8,"integration":"polymer_backfill","waveguide_platform":"other","vpi_convention":"unspecified","vpil_best":1.44,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":68,"bw_q":"approx","bw_method":"eo_s21","max_baud_gbd":120,"max_line_rate_gbps":200,"max_net_rate_gbps":null,"modulation_format":"OOK 90, 100, 110, 120 Gbit/s (no error floor down to BER 1e-5 for 90-110 Gbit/s); PAM4 88, 104, 112 Gbit/s (44-56 GBd);…","length_q":"","evidence_ref":"data/evidence/lu2020.yaml","notes":"Single device; numbers from the Nature Communications version of record, its Supplementary Information and the Author Correction (Fig. 1c label 4 mm -> 4 um; no value changes). Vpi 1.8 V comes from Table 1 and equals the measured Vpi*L of…"},{"device_id":"luan2026-a","paper_id":"luan2026","year":2026,"platform":"Graphene/2D","eo_material":"graphene_2d","device_class":"ring","row_kind":"device","band":"c_band","wavelength_nm":1549.023,"length_mm":0.01,"integration":"transferred_2d","waveguide_platform":"soi_slot","vpi_convention":"resonance_tuning_derived","vpil_best":0.022,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":70,"bw_q":"gt","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":50,"max_net_rate_gbps":null,"modulation_format":"binary eye diagram, PRBS 2^15-1, 50 Gbit/s (format name not stated)","length_q":"","evidence_ref":"data/evidence/luan2026.yaml","notes":"Numbers from arXiv v1 preprint (2604.08472v1); Crossref record 10.1002/lpor.71349 (Laser & Photonics Reviews, e71349, issued 2026-05-27) matches this paper (title, five authors); the journal version was not read. Supplementary Information…"},{"device_id":"luan2026-b","paper_id":"luan2026","year":2026,"platform":"Graphene/2D","eo_material":"graphene_2d","device_class":"ring","row_kind":"device","band":"nir_above_u","wavelength_nm":2000,"length_mm":0.01,"integration":"transferred_2d","waveguide_platform":"soi_slot","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":20,"bw_q":"gt","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":20,"max_net_rate_gbps":null,"modulation_format":"binary eye diagram, 20 Gbit/s (format name not stated)","length_q":"","evidence_ref":"data/evidence/luan2026.yaml","notes":"Same physical chip design as luan2026-a with 2 um grating couplers. Numbers from arXiv v1 (2604.08472v1). Phase change only 0.46 pi (20 V and 4 V, Fig. 3(e)), so no V_pi entered. BW over 20 GHz is limited by a 15 GHz photodetector (Discove…"},{"device_id":"luan2026-c","paper_id":"luan2026","year":2026,"platform":"Graphene/2D","eo_material":"graphene_2d","device_class":"ring","row_kind":"device","band":"c_band","wavelength_nm":null,"length_mm":0.01,"integration":"transferred_2d","waveguide_platform":"soi_slot","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":40,"bw_q":"gt","bw_method":"unspecified","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/luan2026.yaml","notes":"Reproducibility statistics of the 1.5 um band design (Fig. 5): slot 50 nm, coupling length 5 um, bus-ring gap 100-150 nm, graphene length 10 um. Mean ER 26.4 dB and mean IL 5.2 dB, mean OMA -5.3 dBm at 6 V swing, all bandwidths above 40 GH…"},{"device_id":"luan2026a-a","paper_id":"luan2026a","year":2026,"platform":"Graphene/2D","eo_material":"graphene_2d","device_class":"eam","row_kind":"device","band":"nir_above_u","wavelength_nm":2000,"length_mm":0.006,"integration":"transferred_2d","waveguide_platform":"soi_slot","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":40,"bw_q":"gt","bw_method":"sideband","max_baud_gbd":null,"max_line_rate_gbps":25,"max_net_rate_gbps":null,"modulation_format":"NRZ, PRBS 2^15-1, 25 Gbit/s open eye (photodetector limited)","length_q":"","evidence_ref":"data/evidence/luan2026a.yaml","notes":"Numbers from arXiv v1 preprint (2604.03153v1, 8 pages, 3 Apr 2026); no DOI or journal version found in the cache. Static modulation efficiency 0.22 dB/um over -15 V to 15 V (Fig. 3(c)); no ER value for a stated length is reported. BW over…"},{"device_id":"luan2026a-b","paper_id":"luan2026a","year":2026,"platform":"Graphene/2D","eo_material":"graphene_2d","device_class":"eam","row_kind":"device","band":"c_band","wavelength_nm":null,"length_mm":0.006,"integration":"transferred_2d","waveguide_platform":"soi_slot","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":70,"bw_q":"gt","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":50,"max_net_rate_gbps":null,"modulation_format":"NRZ, PRBS 2^15-1, 50 Gbit/s open eye (setup limited)","length_q":"","evidence_ref":"data/evidence/luan2026a.yaml","notes":"Numbers from arXiv v1 preprint (2604.03153v1). Same slot width, waveguide width and electrical structure as Device A, with 1.55 um grating couplers (4 dB) and strip-to-slot converter 0.45 dB. Modulation efficiency 0.2 dB/um (p.5); Fig. 4(b…"},{"device_id":"mao2022-a","paper_id":"mao2022","year":2022,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":6,"integration":"monolithic","waveguide_platform":"lnoi_loaded_si","vpi_convention":"mzm_push_pull","vpil_best":1.9,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":60,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":100,"max_line_rate_gbps":200,"max_net_rate_gbps":null,"modulation_format":"OOK 84 and 100 Gbit/s; PAM4 168 and 200 Gbit/s (raised-cosine roll-off 0.4); offline feed-forward equalization; OOK BER…","length_q":"","evidence_ref":"data/evidence/mao2022.yaml","notes":"Single device; propagation loss comes from separate cut-back waveguides of the Si/TFLN structure. Vpi from a 10 kHz triangle wave at 5.0 Vpp (bias point not stated); Vpi*L 1.9 V cm is Vpi times the 6.0 mm length (abstract calls it measured…"},{"device_id":"mao2024-1310","paper_id":"mao2024","year":2024,"platform":"Other","eo_material":"plzt","device_class":"mzm","row_kind":"device","band":"o_band","wavelength_nm":1310,"length_mm":2.5,"integration":"monolithic","waveguide_platform":"other","vpi_convention":"mzm_push_pull","vpil_best":0.58,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":172,"max_line_rate_gbps":304,"max_net_rate_gbps":null,"modulation_format":"OOK 128-172 Gbit/s (BER below HD-FEC without FFE at 172); PAM4 232-304 Gbit/s (BER below HD-FEC 4.5e-3 at 304)","length_q":"","evidence_ref":"data/evidence/mao2024.yaml","notes":"Vpi measured at 1310 nm; text says high-speed performance independent of wavelength (OOK 172 Gbit/s eye Q 3.0, 4.0 with FFE; PAM4 304 Gbit/s below HD-FEC at both wavelengths, Fig. 4(d,e,g,i)). Loss and bandwidth values are not wavelength-a…"},{"device_id":"mao2024-1550","paper_id":"mao2024","year":2024,"platform":"Other","eo_material":"plzt","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":2.5,"integration":"monolithic","waveguide_platform":"other","vpi_convention":"mzm_push_pull","vpil_best":0.7,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":70,"bw_q":"gt","bw_method":"eo_s21","max_baud_gbd":172,"max_line_rate_gbps":304,"max_net_rate_gbps":null,"modulation_format":"OOK 128-172 Gbit/s (BER below HD-FEC without FFE at 172); PAM4 232-304 Gbit/s (BER below HD-FEC 4.5e-3 at 304)","length_q":"","evidence_ref":"data/evidence/mao2024.yaml","notes":"Headline row. Bandwidth, on-chip loss and propagation loss are stated without a wavelength; entered on this row only (assumed headline wavelength, not stated). Table 1 (p.6) lists phase-shifter loss 0.6 dB/mm for this work; Methods (p.6) g…"},{"device_id":"meng2023-a","paper_id":"meng2023","year":2023,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"o_band","wavelength_nm":1310,"length_mm":5,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"mzm_push_pull","vpil_best":1.02,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":108,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":112,"max_line_rate_gbps":224,"max_net_rate_gbps":null,"modulation_format":"OOK 56/80/112 Gb/s; PAM4 112 Gb/s (56 GBd) and 224 Gb/s (112 GBd)","length_q":"","evidence_ref":"data/evidence/meng2023.yaml","notes":"Vpi 2.04 V from a 100 kHz sawtooth sweep (Fig. 5(a)); VpiL 1.02 V*cm in abstract/Sec. 3.1, 1.024 in Sec. 1/Table 1 (2.04 V x 0.5 cm = 1.02). Measured at 1310 nm (O-band laser; wavelength explicitly given for IL). EO S21 reaches -3 dB at 10…"},{"device_id":"meng2023-b","paper_id":"meng2023","year":2023,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"","wavelength_nm":null,"length_mm":8,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":56,"max_net_rate_gbps":null,"modulation_format":"OOK 56 Gb/s","length_q":"","evidence_ref":"data/evidence/meng2023.yaml","notes":"Only reported metric is the dynamic eye ER at 56 Gb/s OOK under the same drive voltage as the device without TCO (Fig. 8(b)); wavelength, gap and drive amplitude not stated; Sec. 4 rounds the improvement to about 4.7 dB. Geometry assumed t…"},{"device_id":"meng2023-c","paper_id":"meng2023","year":2023,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"","wavelength_nm":null,"length_mm":8,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":56,"max_net_rate_gbps":null,"modulation_format":"OOK 56 Gb/s","length_q":"","evidence_ref":"data/evidence/meng2023.yaml","notes":"Only reported metric is the dynamic eye ER at 56 Gb/s OOK (Fig. 8(a)); electrode gap, wavelength and drive not stated."},{"device_id":"mohl2025-a","paper_id":"mohl2025","year":2025,"platform":"BTO","eo_material":"barium_titanate","device_class":"resonator","row_kind":"device","band":"l_band","wavelength_nm":1603.5,"length_mm":null,"integration":"bonded_heterogeneous","waveguide_platform":"bto_on_oxide_substrate","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/mohl2025.yaml","notes":"Row kept for the EO-device quantities only. Cryogenic dc electro-optic tuning efficiency near the working bias Vbias = -100 V: d(omega_a)/dV = 2pi x 145 MHz/V (p.26, Fig. 22, linear fit; measurement temperature not stated, so temperature_k…"},{"device_id":"montifiore2026-a","paper_id":"montifiore2026","year":2026,"platform":"Other","eo_material":"pzt","device_class":"mzm","row_kind":"device","band":"visible","wavelength_nm":532,"length_mm":50,"integration":"monolithic","waveguide_platform":"sin","vpi_convention":"mzm_single_arm","vpil_best":14,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":0.0004,"bw_q":"","bw_method":"unspecified","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/montifiore2026.yaml","notes":"PZT actuator on one MZI arm only (coil). Tuning 716 MHz/V (0.68 pm/V). VpiL*alpha 6.71 V*dB (stated) is inconsistent with 14.0 V*cm x 0.24 dB/cm = 3.36 V*dB (implies 0.48 dB/cm); both as printed. 6 dB bandwidth 0.6 MHz, 180 degree phase la…"},{"device_id":"montifiore2026-b","paper_id":"montifiore2026","year":2026,"platform":"Other","eo_material":"pzt","device_class":"phase_shifter","row_kind":"device","band":"visible","wavelength_nm":493,"length_mm":50,"integration":"monolithic","waveguide_platform":"sin","vpi_convention":"per_arm_phase_shifter","vpil_best":14,"vpil_source":"derived_dc","vpil_q":"","bw3db_ghz":0.00016,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/montifiore2026.yaml","notes":"Coil MZM with the input splitter diced off; only the PZT-actuated arm used. Vpi 2.8 V appears in abstract and Sec. 1 only (no measurement figure); V_pi L and loss not stated for this device. Bandwidth values are the Fig. 4(a) legend cutoff…"},{"device_id":"montifiore2026-c","paper_id":"montifiore2026","year":2026,"platform":"Other","eo_material":"pzt","device_class":"ring","row_kind":"device","band":"visible","wavelength_nm":493,"length_mm":null,"integration":"monolithic","waveguide_platform":"sin","vpi_convention":"resonance_tuning_derived","vpil_best":9.75,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":0.0026,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/montifiore2026.yaml","notes":"Critically coupled single-bus ring, 750 um radius, 20 nm nitride core. Intrinsic Q 3.4 million (no column), FWHM 324 MHz. Linear tuning 0.92 GHz/V (0.75 pm/V) only outside the hysteresis region (|V| above about 1.5 V; nonlinear below). Vpi…"},{"device_id":"montifiore2026-d","paper_id":"montifiore2026","year":2026,"platform":"Other","eo_material":"pzt","device_class":"ring","row_kind":"device","band":"nir_below_o","wavelength_nm":780,"length_mm":null,"integration":"monolithic","waveguide_platform":"sin","vpi_convention":"resonance_tuning_derived","vpil_best":8.86,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":0.01,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/montifiore2026.yaml","notes":"Two-bus add-drop ring, 750 um radius, 120 nm x 900 nm nitride core, slightly under-coupled at 780 nm. Intrinsic Q 1.9 million (no column), FWHM 539 MHz. Linear tuning 1.01 GHz/V (2.1 pm/V) outside the 0-3 V hysteresis region. Vpi 18.8 V, V…"},{"device_id":"murai2025-a","paper_id":"murai2025","year":2025,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":9.9,"integration":"micro_transfer_printed","waveguide_platform":"lnoi_rib","vpi_convention":"mzm_push_pull","vpil_best":2.7,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":28,"bw_q":"approx","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/murai2025.yaml","notes":"Headline device: coupon 11 mm x 100 um, 9.9 mm electrodes (p.2-6). VpiL 2.7 V cm vs simulated 2.5 V cm (Fig. 5(c)); text gives the sweep as +-2 V with -3 V offset while Fig. 5(a) shows a drive from about -3.05 to +0.9 V (axis ticks only 0…"},{"device_id":"murai2025-b","paper_id":"murai2025","year":2025,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":3,"integration":"micro_transfer_printed","waveguide_platform":"lnoi_rib","vpi_convention":"mzm_push_pull","vpil_best":2.6700000000000004,"vpil_source":"derived_dc","vpil_q":"","bw3db_ghz":50,"bw_q":"gt","bw_method":"eo_s21","max_baud_gbd":50,"max_line_rate_gbps":50,"max_net_rate_gbps":null,"modulation_format":"NRZ, PRBS7","length_q":"","evidence_ref":"data/evidence/murai2025.yaml","notes":"Second device on the same process: coupon 4 mm x 100 um, 3.0 mm electrodes. Vpi 8.9 V is not a direct sweep: Table 1 footnote says estimated from the Fig. 5(b) measurement; it is length-scaled from row -a (2.7 V x 9.9/3.0), so a derived Vp…"},{"device_id":"navarro2026-a","paper_id":"navarro2026","year":2026,"platform":"Graphene/2D","eo_material":"graphene_2d","device_class":"phase_shifter","row_kind":"design","band":"c_band","wavelength_nm":1550,"length_mm":0.143,"integration":"","waveguide_platform":"sin","vpi_convention":"mzm_single_arm","vpil_best":0.0887,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":6.5,"bw_q":"","bw_method":"indirect","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/navarro2026.yaml","notes":"Numbers from arXiv v1 (2605.00112v1, 29 pages, 30 Apr 2026); theory and simulation only (COMSOL, Kubo conductivity), no fabricated device. Values from Table 1 (p.15), single-arm (SA) and push-pull (PP) rows. Graphene mobility 10000 cm2/Vs,…"},{"device_id":"navarro2026-b","paper_id":"navarro2026","year":2026,"platform":"Graphene/2D","eo_material":"graphene_2d","device_class":"phase_shifter","row_kind":"design","band":"c_band","wavelength_nm":1550,"length_mm":0.096,"integration":"","waveguide_platform":"sin","vpi_convention":"mzm_single_arm","vpil_best":0.0704,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":6.5,"bw_q":"","bw_method":"indirect","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/navarro2026.yaml","notes":"Numbers from arXiv v1 (2605.00112v1, 29 pages, 30 Apr 2026); theory and simulation only (COMSOL, Kubo conductivity), no fabricated device. Values from Table 1 (p.15), single-arm (SA) and push-pull (PP) rows. Graphene mobility 10000 cm2/Vs,…"},{"device_id":"navarro2026-c","paper_id":"navarro2026","year":2026,"platform":"Graphene/2D","eo_material":"graphene_2d","device_class":"phase_shifter","row_kind":"design","band":"c_band","wavelength_nm":1550,"length_mm":0.048,"integration":"","waveguide_platform":"sin","vpi_convention":"mzm_push_pull","vpil_best":0.0704,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":6.5,"bw_q":"","bw_method":"indirect","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/navarro2026.yaml","notes":"Numbers from arXiv v1 (2605.00112v1, 29 pages, 30 Apr 2026); theory and simulation only (COMSOL, Kubo conductivity), no fabricated device. Values from Table 1 (p.15), single-arm (SA) and push-pull (PP) rows. Graphene mobility 10000 cm2/Vs,…"},{"device_id":"navarro2026-d","paper_id":"navarro2026","year":2026,"platform":"Graphene/2D","eo_material":"graphene_2d","device_class":"phase_shifter","row_kind":"design","band":"c_band","wavelength_nm":1550,"length_mm":0.383,"integration":"","waveguide_platform":"sin","vpi_convention":"mzm_single_arm","vpil_best":0.1348,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":15.2,"bw_q":"","bw_method":"indirect","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/navarro2026.yaml","notes":"Numbers from arXiv v1 (2605.00112v1, 29 pages, 30 Apr 2026); theory and simulation only (COMSOL, Kubo conductivity), no fabricated device. Values from Table 1 (p.15), single-arm (SA) and push-pull (PP) rows. Graphene mobility 10000 cm2/Vs,…"},{"device_id":"navarro2026-e","paper_id":"navarro2026","year":2026,"platform":"Graphene/2D","eo_material":"graphene_2d","device_class":"phase_shifter","row_kind":"design","band":"c_band","wavelength_nm":1550,"length_mm":0.164,"integration":"","waveguide_platform":"sin","vpi_convention":"mzm_single_arm","vpil_best":0.1004,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":15.2,"bw_q":"","bw_method":"indirect","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/navarro2026.yaml","notes":"Numbers from arXiv v1 (2605.00112v1, 29 pages, 30 Apr 2026); theory and simulation only (COMSOL, Kubo conductivity), no fabricated device. Values from Table 1 (p.15), single-arm (SA) and push-pull (PP) rows. Graphene mobility 10000 cm2/Vs,…"},{"device_id":"navarro2026-f","paper_id":"navarro2026","year":2026,"platform":"Graphene/2D","eo_material":"graphene_2d","device_class":"phase_shifter","row_kind":"design","band":"c_band","wavelength_nm":1550,"length_mm":0.082,"integration":"","waveguide_platform":"sin","vpi_convention":"mzm_push_pull","vpil_best":0.1004,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":15.2,"bw_q":"","bw_method":"indirect","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/navarro2026.yaml","notes":"Numbers from arXiv v1 (2605.00112v1, 29 pages, 30 Apr 2026); theory and simulation only (COMSOL, Kubo conductivity), no fabricated device. Values from Table 1 (p.15), single-arm (SA) and push-pull (PP) rows. Graphene mobility 10000 cm2/Vs,…"},{"device_id":"nelan2022-a","paper_id":"nelan2022","year":2022,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":11,"integration":"monolithic","waveguide_platform":"lnoi_loaded_sin","vpi_convention":"mzm_push_pull","vpil_best":3.3,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":30,"bw_q":"approx","bw_method":"sideband","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/nelan2022.yaml","notes":"VERSION arXiv v1. Folded layout with waveguide crossing: two 5.5 mm interaction sections (11 mm total), physical length 7.8 mm; output 2x2 MMI gives two complementary outputs. Vpi 2.98 V from a 150 kHz triangular sweep (Fig. 7(f)); abstrac…"},{"device_id":"nelan2022a-a","paper_id":"nelan2022a","year":2022,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"","wavelength_nm":null,"length_mm":10,"integration":"monolithic","waveguide_platform":"lnoi_loaded_sin","vpi_convention":"mzm_push_pull","vpil_best":3.75,"vpil_source":"derived_dc","vpil_q":"approx","bw3db_ghz":95,"bw_q":"approx","bw_method":"sideband","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/nelan2022a.yaml","notes":"VERSION arXiv v1. Operating wavelength not stated. Electrode: T-segments with W_SIG 50, W_GAP 6, W_TOP 45, W_TGAP 5, W_STEM 34, H_TOP 3, H_BASE 3, H_STEM 3, T_AU 1 um (Fig. 1(c)); W_STEM tuned from 10 to 42 um moves n_RF from 2.3 to 2.1; s…"},{"device_id":"nenezic2026-case1","paper_id":"nenezic2026","year":2026,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"design","band":"o_band","wavelength_nm":1310,"length_mm":7,"integration":"micro_transfer_printed","waveguide_platform":"lnoi_rib","vpi_convention":"mzm_push_pull","vpil_best":1.246,"vpil_source":"derived_dc","vpil_q":"","bw3db_ghz":139,"bw_q":"","bw_method":"link_eoe","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/nenezic2026.yaml","notes":"Table I case 1, noted 'BiCMOS driving'; design target Vpi compatible with BiCMOS drive, bandwidth above 110 GHz, low insertion loss. Values are Monte Carlo means with +- as printed (Vpi +-0.04 V, loss +-0.02 dB, bandwidth +-2 GHz). Bandwid…"},{"device_id":"nenezic2026-case2","paper_id":"nenezic2026","year":2026,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"design","band":"o_band","wavelength_nm":1310,"length_mm":5,"integration":"micro_transfer_printed","waveguide_platform":"lnoi_rib","vpi_convention":"mzm_push_pull","vpil_best":1.125,"vpil_source":"derived_dc","vpil_q":"","bw3db_ghz":150,"bw_q":"gt","bw_method":"link_eoe","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/nenezic2026.yaml","notes":"Table I case 2, noted 'BiCMOS driving, smaller devices'; design target bandwidth above 150 GHz with Vpi compatible with BiCMOS drive. Bandwidth printed as '150+', entered as 150 with a gt qualifier. Vpi +-0.16 V, loss +-0.01 dB. Bandwidth…"},{"device_id":"nenezic2026-case3","paper_id":"nenezic2026","year":2026,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"design","band":"o_band","wavelength_nm":1310,"length_mm":12,"integration":"micro_transfer_printed","waveguide_platform":"lnoi_rib","vpi_convention":"mzm_push_pull","vpil_best":1.23,"vpil_source":"derived_dc","vpil_q":"","bw3db_ghz":95,"bw_q":"","bw_method":"link_eoe","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/nenezic2026.yaml","notes":"Table I case 3, noted 'CMOS driving, low Vpi variance'; design target Vpi compatible with CMOS drive. Vpi +-0.025 V, loss +-0.1 dB, bandwidth +-3 GHz. Bandwidth is the EOE 3 dB bandwidth. Vpi frequency not stated (quasi-static EO simulatio…"},{"device_id":"niels2025a-a","paper_id":"niels2025a","year":2024,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":10,"integration":"micro_transfer_printed","waveguide_platform":"lnoi_loaded_sin","vpi_convention":"mzm_push_pull","vpil_best":3.2,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/niels2025a.yaml","notes":"Unbalanced MZM with one printed coupon per arm, arms driven 180 degrees out of phase (p.5-6). Frequency response (Fig. 8(b)) falls to about -4.5 dB by 3 GHz then sits near -6 to -7 dB flat to 35 GHz; the authors attribute the early roll-of…"},{"device_id":"niels2026-a","paper_id":"niels2026","year":2025,"platform":"TFLT","eo_material":"lithium_tantalate","device_class":"mzm","row_kind":"device","band":"o_band","wavelength_nm":1310,"length_mm":6.6,"integration":"micro_transfer_printed","waveguide_platform":"ltoi_loaded_sin","vpi_convention":"per_arm_phase_shifter","vpil_best":4.619999999999999,"vpil_source":"derived_dc","vpil_q":"","bw3db_ghz":70,"bw_q":"gt","bw_method":"link_eoe","max_baud_gbd":190,"max_line_rate_gbps":320,"max_net_rate_gbps":null,"modulation_format":"NRZ up to 190 GBd; PAM4 up to 160 GBd (BER below the 15% overhead FEC threshold)","length_q":"","evidence_ref":"data/evidence/niels2026.yaml","notes":"Numbers from the arXiv v1 manuscript (PDF dated 2025-03-14), not the Nature Photonics 20(2) version. Per-arm Vpi 7.0 V; push-pull 3.5 V and VpiL 2.3 V cm refer to the push-pull value (3.5 V x 6.6 mm), so vpil is left empty to avoid mixing…"},{"device_id":"oe2026-a","paper_id":"oe2026","year":2026,"platform":"InP","eo_material":"inp_mqw","device_class":"eam","row_kind":"device","band":"o_band","wavelength_nm":1311.1,"length_mm":null,"integration":"monolithic","waveguide_platform":"inp","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":80,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":113.4375,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"PAM4 113.4375 GBd (SSPRQ), 2.0 Vpp differential, 15-tap FFE: ER 5.2 dB, OMA 8.6 dBm, TDECQ 1.28 dB at SER 9.6e-3 (56.72…","length_q":"","evidence_ref":"data/evidence/oe2026.yaml","notes":"EA1 (laser side) driven by positive phase, EA2 by negative phase; EA1 longer than EA2, lengths not given. Static ER 22 dB for 0 to -3 V. Operating bias -1.7 V. Return loss below -10 dB and CMRR above 15 dB to 60 GHz."},{"device_id":"ogiso2016-a","paper_id":"ogiso2016","year":2016,"platform":"InP","eo_material":"inp_mqw","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":3,"integration":"monolithic","waveguide_platform":"inp","vpi_convention":"mzm_series_push_pull","vpil_best":0.6,"vpil_source":"derived_dc","vpil_q":"","bw3db_ghz":67,"bw_q":"gt","bw_method":"eo_s21","max_baud_gbd":100,"max_line_rate_gbps":100,"max_net_rate_gbps":null,"modulation_format":"NRZ-OOK","length_q":"","evidence_ref":"data/evidence/ogiso2016.yaml","notes":"n-i-p-n heterostructure; CL-TWE plated on BCB; single-ended 50 ohm design. Vpi 2.0 V set at 1530-1560 nm by adjusting DC bias (bias value not stated, so bias_for_vpi_v empty); EO and S-parameter responses measured at -5 V reverse bias. ER…"},{"device_id":"ogiso2020-a","paper_id":"ogiso2020","year":2019,"platform":"InP","eo_material":"inp_mqw","device_class":"iq_mzm","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":4,"integration":"monolithic","waveguide_platform":"inp","vpi_convention":"mzm_series_push_pull","vpil_best":0.6,"vpil_source":"derived_dc","vpil_q":"","bw3db_ghz":80,"bw_q":"approx","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/ogiso2020.yaml","notes":"Twin-IQ PIC with differential GSSG line and flip-chip terminators; 4.0 mm long CL-TWE (periodic length shortened from 200 to 150 um; measured EE responses roll off over 100 GHz, Fig. 3); chip 3.3 x 8.3 mm2. Vpi 1.5 V (title/abstract; Sec.…"},{"device_id":"ogiso2020-b","paper_id":"ogiso2020","year":2019,"platform":"InP","eo_material":"inp_mqw","device_class":"iq_mzm","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":null,"integration":"monolithic","waveguide_platform":"inp","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":67,"bw_q":"gt","bw_method":"eo_s21","max_baud_gbd":128,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"back-to-back single polarization: QPSK 128 GBd BER 3.38e-5 (below 20% SD-FEC; oscilloscope 63 GHz insufficient); QPSK 1…","length_q":"","evidence_ref":"data/evidence/ogiso2020.yaml","notes":"Drive series_push_pull derived as for the twin-IQ PIC (the paper says \"differential\"). Sub-assembly of a single-IQ modulator PIC (electrical design and characteristics almost the same as the twin-IQ PIC, flip-chip terminators replaced by b…"},{"device_id":"ogiso2024-a","paper_id":"ogiso2024","year":2024,"platform":"InP","eo_material":"inp_mqw","device_class":"iq_mzm","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":3.6,"integration":"monolithic","waveguide_platform":"inp","vpi_convention":"mzm_series_push_pull","vpil_best":0.54,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":100,"bw_q":"gt","bw_method":"unspecified","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/ogiso2024.yaml","notes":"Headline device of the paper (abstract: Vpi 1.5 V, 3 dB EO bandwidth over 100 GHz, on-chip IL below 3.5 dB). Vpi set to 1.5 V by reverse bias of about -10 V over the whole C band (bias-dependent absorption: Vpi 1.4 V costs up to 1.0 dB ext…"},{"device_id":"ogiso2024-b","paper_id":"ogiso2024","year":2024,"platform":"InP","eo_material":"inp_mqw","device_class":"iq_mzm","row_kind":"device","band":"cl_band","wavelength_nm":null,"length_mm":3.6,"integration":"monolithic","waveguide_platform":"inp","vpi_convention":"mzm_series_push_pull","vpil_best":0.72,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":100,"bw_q":"gt","bw_method":"unspecified","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/ogiso2024.yaml","notes":"Wide-wavelength variant (MMI or taper cross waveguide) at Vpi 2.0 V, where bias absorption is sufficiently low over the whole C+L band (Fig. 3). Table 1 values for this column: on-chip IL 4.0 dB typ, EO bandwidth >100 / >110 GHz (3 / 6 dB)…"},{"device_id":"ogiso2024-c","paper_id":"ogiso2024","year":2024,"platform":"InP","eo_material":"inp_mqw","device_class":"iq_mzm","row_kind":"device","band":"","wavelength_nm":null,"length_mm":3.6,"integration":"monolithic","waveguide_platform":"inp","vpi_convention":"mzm_series_push_pull","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":90,"bw_q":"","bw_method":"unspecified","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/ogiso2024.yaml","notes":"Intermediate variant: electrode design and process modified (capacitance-loaded TWE period shortened from 150 to 120 um to raise the Bragg and RC roll-off frequency); optical waveguide unchanged. Only the 3 dB EO bandwidth (90 GHz, Fig. 4b…"},{"device_id":"ogiso2024-d","paper_id":"ogiso2024","year":2024,"platform":"InP","eo_material":"inp_mqw","device_class":"iq_mzm","row_kind":"device","band":"","wavelength_nm":null,"length_mm":3.6,"integration":"monolithic","waveguide_platform":"inp","vpi_convention":"mzm_series_push_pull","vpil_best":0.72,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":70,"bw_q":"approx","bw_method":"unspecified","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/ogiso2024.yaml","notes":"Previous-generation 130 GBd-class commercial PIC shown as the reference (Fig. 4a, Table 1 first column; band 'C or L'). Text: 3 dB EO bandwidth around 70 GHz (Table 1 lists >67 GHz at 3 dB and >80 GHz at 6 dB), limited by microwave loss an…"},{"device_id":"okuda2026-a","paper_id":"okuda2026","year":2026,"platform":"InP","eo_material":"inp_mqw","device_class":"eam","row_kind":"device","band":"o_band","wavelength_nm":1310,"length_mm":null,"integration":"monolithic","waveguide_platform":"inp","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":100,"bw_q":"gt","bw_method":"eo_s21","max_baud_gbd":180,"max_line_rate_gbps":360,"max_net_rate_gbps":null,"modulation_format":"PAM4 differential, 15-tap FFE, SER 9.6e-3: BtB 180 GBd (360 Gb/s) TDECQ 3.3 dB, 170 GBd (340 Gb/s) 2.1 dB; 500 m 170 GB…","length_q":"","evidence_ref":"data/evidence/okuda2026.yaml","notes":"EAMs biased +2.3 V and -2.3 V on a common GND electrode; DFB 100 mA, threshold 8 mA, 19 mW output. S21 is the differential value computed from the two EAMs. Transmission over 500 m and 2 km."},{"device_id":"pan2021-a","paper_id":"pan2021","year":2021,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"nir_above_u","wavelength_nm":1957,"length_mm":5,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"mzm_push_pull","vpil_best":3.67,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":22,"bw_q":"gt","bw_method":"eo_s21","max_baud_gbd":32,"max_line_rate_gbps":32,"max_net_rate_gbps":null,"modulation_format":"OOK","length_q":"","evidence_ref":"data/evidence/pan2021.yaml","notes":"Authors' priority claim (abstract p.1): 'the first Mach-Zehnder EO modulator working at 2 um'. Push-pull is stated for the VpiL definition (p.3); the measurement drive is a single probe, so drive/convention follow that design statement. Fi…"},{"device_id":"park2026-a","paper_id":"park2026","year":2026,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"nir_below_o","wavelength_nm":1064,"length_mm":null,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"unspecified","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/park2026.yaml","notes":"DC bias sweep (Fig. 3b): Vpi 3.98 V; static ER 23.2 dB on the 1064 nm pump transmission (Fig. 3d). Fiber-to-fiber 14.3 dB at the pump 'through the MZI' (p.8); whether the PPLN section and its facet are included is not stated. Rise/fall (10…"},{"device_id":"park2026-b","paper_id":"park2026","year":2026,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"visible","wavelength_nm":532,"length_mm":null,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"unspecified","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/park2026.yaml","notes":"Second-harmonic output of the same device: the SH transfer curve is cos^4 of the MZI phase and gives the same Vpi 3.98 V (Fig. 3c, text p.9); the 42.2 dB SH ER (Fig. 3e) is limited by the photodetector noise floor and is a nonlinear (SHG-s…"},{"device_id":"porto2026-a","paper_id":"porto2026","year":2026,"platform":"InP","eo_material":"inp_mqw","device_class":"mzm","row_kind":"device","band":"o_band","wavelength_nm":null,"length_mm":null,"integration":"monolithic","waveguide_platform":"inp","vpi_convention":"unspecified","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":106.25,"max_line_rate_gbps":212,"max_net_rate_gbps":null,"modulation_format":"PAM4 at 106.25 GBd (212 Gb/s), direct linear drive with SiGe driver, FFE 15 taps at Tx and Rx","length_q":"","evidence_ref":"data/evidence/porto2026.yaml","notes":"Monolithic InP PIC with four O-band DFBs (each feeds two channels), eight traveling-wave MZMs with DC phase adjusters in each arm and integrated 30 ohm metallic load resistors connecting the two arms, eight SOAs and power-monitor taps. MZM…"},{"device_id":"powell2024-a","paper_id":"powell2024","year":2024,"platform":"TFLT","eo_material":"lithium_tantalate","device_class":"mzm","row_kind":"device","band":"visible","wavelength_nm":737,"length_mm":5,"integration":"monolithic","waveguide_platform":"ltoi_rib","vpi_convention":"mzm_push_pull","vpil_best":0.65,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":5,"bw_q":"approx","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/powell2024.yaml","notes":"S21 trace flat near -5 dB to 20 GHz (Fig. 1(e)). Ring loss 0.5 dB/cm is at 638 nm, uncladded."},{"device_id":"powell2024a-a","paper_id":"powell2024a","year":2024,"platform":"TFLT","eo_material":"lithium_tantalate","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":7.5,"integration":"monolithic","waveguide_platform":"ltoi_rib","vpi_convention":"mzm_push_pull","vpil_best":3.4,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":30,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"NRZ PRBS; BER below SD-FEC at 5 GBd from 0 to 70 C; open eye at 30 GBd","length_q":"","evidence_ref":"data/evidence/powell2024a.yaml","notes":"VERSION arXiv v1. Cladded device (800 nm SiO2) carries the VpiL, ER, S21 and Z0 numbers; the MZMs used for the 46 h DC-drift comparison with TFLN are uncladded. DC stability (not a column): below 1 dB power change from quadrature in the fi…"},{"device_id":"prountzou2026-a","paper_id":"prountzou2026","year":2026,"platform":"BTO","eo_material":"barium_titanate","device_class":"free_space","row_kind":"device","band":"nir_below_o","wavelength_nm":783.6,"length_mm":0.05,"integration":"monolithic","waveguide_platform":"other","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":0.001,"bw_q":"approx","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/prountzou2026.yaml","notes":"Free-space metasurface, not a waveguide device: no Vpi; relative transmission modulation dT/T = (T(Vpp) - T(0))/T(0) measured with a lock-in at 1.5 V and 400 kHz at the steepest resonance slope. Maximum |dT/T| 0.08% at 1.5 V (text p.10; Fi…"},{"device_id":"prountzou2026-b","paper_id":"prountzou2026","year":2026,"platform":"BTO","eo_material":"barium_titanate","device_class":"free_space","row_kind":"device","band":"visible","wavelength_nm":768.6,"length_mm":0.05,"integration":"monolithic","waveguide_platform":"other","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":0.001,"bw_q":"approx","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/prountzou2026.yaml","notes":"Free-space metasurface, not a waveguide device: no Vpi; relative transmission modulation dT/T = (T(Vpp) - T(0))/T(0) measured with a lock-in at 1.5 V and 400 kHz at the steepest resonance slope. Maximum |dT/T| 0.12% at 1.5 V (text p.10; Fi…"},{"device_id":"qi2024-a","paper_id":"qi2024","year":2023,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":3,"integration":"monolithic","waveguide_platform":"lnoi_loaded_oxide","vpi_convention":"unspecified","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":110,"bw_q":"gt","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/qi2024.yaml","notes":"3 dB bandwidth defined relative to 1 GHz. Electrical S21 above -6.41 dB to 110 GHz (Fig. 4(d)). Per-length Vpi not reported for this length."},{"device_id":"qi2024-b","paper_id":"qi2024","year":2023,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":5,"integration":"monolithic","waveguide_platform":"lnoi_loaded_oxide","vpi_convention":"unspecified","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":94.171,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/qi2024.yaml","notes":"Per-length Vpi not reported for this length."},{"device_id":"qi2024-c","paper_id":"qi2024","year":2023,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":8,"integration":"monolithic","waveguide_platform":"lnoi_loaded_oxide","vpi_convention":"unspecified","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":80.661,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/qi2024.yaml","notes":"Per-length Vpi not reported for this length."},{"device_id":"qi2024-d","paper_id":"qi2024","year":2023,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":12.917,"integration":"monolithic","waveguide_platform":"lnoi_loaded_oxide","vpi_convention":"unspecified","vpil_best":2.53,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/qi2024.yaml","notes":"Only length with a Vpi measurement (5 kHz, to avoid photorefractive effect). Best ER 10.73 dB and best insertion loss 18.3 dB are quoted over all fabricated devices, not tied to a length; IL definition not stated."},{"device_id":"qiu2026-a","paper_id":"qiu2026","year":2026,"platform":"BTO","eo_material":"barium_titanate","device_class":"mzm","row_kind":"device","band":"o_band","wavelength_nm":null,"length_mm":1.75,"integration":"other","waveguide_platform":"bto_on_si","vpi_convention":"mzm_differential","vpil_best":1.05,"vpil_source":"derived_dc","vpil_q":"","bw3db_ghz":55,"bw_q":"","bw_method":"unspecified","max_baud_gbd":225,"max_line_rate_gbps":null,"max_net_rate_gbps":540,"modulation_format":"PAM4 at 225 GBd (net 422 Gb/s per lane, BER under HD-FEC, 2 km SSMF); PAM6 at 225 GBd (net 506 Gb/s); PAM8 at 225 GBd (…","length_q":"","evidence_ref":"data/evidence/qiu2026.yaml","notes":"Four-channel DR4 chip, 5.1 x 3.5 mm2 die, 1.75 mm phase shifters, 50 ohm differential on-chip terminations, thermal phase shifters (P_pi 13 mW), Ge monitor photodiodes. Row values are for the bare BTO die (Vpi, EO S21, DC ER) or system lev…"},{"device_id":"qiu2026a-a","paper_id":"qiu2026a","year":2026,"platform":"BTO","eo_material":"barium_titanate","device_class":"iq_mzm","row_kind":"device","band":"c_band","wavelength_nm":null,"length_mm":null,"integration":"bonded_heterogeneous","waveguide_platform":"bto_on_oxide_substrate","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"link_eoe","max_baud_gbd":125,"max_line_rate_gbps":null,"max_net_rate_gbps":1000,"modulation_format":"Net 1 Tb/s per lambda: 125 GBd DP-32QAM and 105 GBd DP-64QAM below SD25 FEC, over 80 km (ZR-modeled) and 2 km (bi-direc…","length_q":"","evidence_ref":"data/evidence/qiu2026a.yaml","notes":"Package-level numbers: 1 GHz Vpi 0.4 V includes RF driver, BTO die and test structures (not a device Vpi, not entered); 6 dB EO S21 about 25 GHz at 30 and 85 C includes drivers and wire bonds (Fig. 1(b)). Fiber-to-fiber IL 14.5 dB per pola…"},{"device_id":"rahman2025-1","paper_id":"rahman2025","year":2025,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":null,"integration":"bonded_heterogeneous","waveguide_platform":"lnoi_loaded_sin","vpi_convention":"mzm_push_pull","vpil_best":4.29,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":20,"bw_q":"approx","bw_method":"sideband","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/rahman2025.yaml","notes":"Plain CPW without substrate undercut; length and Vpi not reported. Simulated VpiL 2.75 V cm. Four-chip means. On-chip IL cleared 2026-10-05 under convention (y): main text p.3-4 gives 3.1 dB, Supplementary p.11 gives 2.95 dB (excess over a…"},{"device_id":"rahman2025-2","paper_id":"rahman2025","year":2025,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":null,"integration":"bonded_heterogeneous","waveguide_platform":"lnoi_loaded_sin","vpi_convention":"mzm_push_pull","vpil_best":3.4,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":100,"bw_q":"gt","bw_method":"sideband","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/rahman2025.yaml","notes":"Capacitively loaded T-rail on undercut substrate; length and Vpi not reported. Simulated VpiL 3.33 V cm. On-chip IL cleared 2026-10-05 under convention (y): main text p.3-4 gives 6.6 dB, Supplementary p.11 gives 6.43 dB (excess over a pass…"},{"device_id":"rahman2025-3","paper_id":"rahman2025","year":2025,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":6,"integration":"bonded_heterogeneous","waveguide_platform":"lnoi_loaded_sin","vpi_convention":"mzm_push_pull","vpil_best":3.83,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":111,"bw_q":"gt","bw_method":"sideband","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/rahman2025.yaml","notes":"Headline device. Vpi 6.4 V and ER from one representative device; VpiL and IL are four-chip means. Simulated VpiL 3.96 V cm. On-chip IL cleared 2026-10-05 under convention (y): main text p.3-4 gives 4.0 dB, Supplementary p.11 gives 3.77 dB…"},{"device_id":"rakowski2026-a","paper_id":"rakowski2026","year":2026,"platform":"SiPh","eo_material":"silicon_plasma_dispersion","device_class":"ring","row_kind":"device","band":"o_band","wavelength_nm":1314.385,"length_mm":null,"integration":"foundry_native","waveguide_platform":"soi_rib","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":55,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":120,"max_line_rate_gbps":240,"max_net_rate_gbps":null,"modulation_format":"NRZ 120 Gb/s (PRBS 2^16-1, DC -1 V, ER 2.6 dB); PAM4 240 Gb/s = 120 GBd (DC -0.86 V, 32 GHz receiver filter, 21-tap FFE…","length_q":"","evidence_ref":"data/evidence/rakowski2026.yaml","notes":"Same MRM as rakowski2026-b. Operating point about -80 pm detuning from the 0 V resonance (1314.385 nm, Fig. 2b) at 1 V average reverse bias, 2 Vpp swing 0 to -2 V; resonance shift 80 pm per 2 V and heater efficiency 2.5 mW/nm (0.4 nm/mW).…"},{"device_id":"rakowski2026-b","paper_id":"rakowski2026","year":2026,"platform":"SiPh","eo_material":"silicon_plasma_dispersion","device_class":"ring","row_kind":"device","band":"o_band","wavelength_nm":1314.385,"length_mm":null,"integration":"foundry_native","waveguide_platform":"soi_rib","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":70,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/rakowski2026.yaml","notes":"Same MRM as rakowski2026-a, driven 0.5 V forward to 2.5 V reverse (average 1 V reverse). Resonance shift 125 pm per 3 V. 70 GHz, IL 1.8 dB, rOMA 4.5 dB at ER=3.5 dB (Table 1) are read by the authors from the Fig. 3(b) regression trend; the…"},{"device_id":"renaud2023-2p5um-738","paper_id":"renaud2023","year":2022,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"visible","wavelength_nm":738,"length_mm":10,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"mzm_push_pull","vpil_best":0.4699999999999999,"vpil_source":"derived_dc","vpil_q":"approx","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/renaud2023.yaml","notes":"Vpi measured at 1 MHz with a triangle waveform (Methods p.5). Push-pull GSG CPW electrodes stated (p.2). Electrode signal and ground widths and whether the Au contacts the LN slab or sits on cladding are not stated. Gap series at 738 nm (F…"},{"device_id":"renaud2023-3um-532","paper_id":"renaud2023","year":2022,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"visible","wavelength_nm":532,"length_mm":10,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"mzm_push_pull","vpil_best":0.42000000000000004,"vpil_source":"derived_dc","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/renaud2023.yaml","notes":"Vpi measured at 1 MHz with a triangle waveform (Methods p.5). Push-pull GSG CPW electrodes stated (p.2). Electrode signal and ground widths and whether the Au contacts the LN slab or sits on cladding are not stated. Wavelength series on on…"},{"device_id":"renaud2023-3um-638","paper_id":"renaud2023","year":2022,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"visible","wavelength_nm":638,"length_mm":10,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"mzm_push_pull","vpil_best":0.45,"vpil_source":"derived_dc","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/renaud2023.yaml","notes":"Vpi measured at 1 MHz with a triangle waveform (Methods p.5). Push-pull GSG CPW electrodes stated (p.2). Electrode signal and ground widths and whether the Au contacts the LN slab or sits on cladding are not stated. Wavelength series on on…"},{"device_id":"renaud2023-3um-738","paper_id":"renaud2023","year":2022,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"visible","wavelength_nm":738,"length_mm":10,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"mzm_push_pull","vpil_best":0.55,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":35,"bw_q":"approx","bw_method":"sideband","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/renaud2023.yaml","notes":"Vpi measured at 1 MHz with a triangle waveform (Methods p.5). Push-pull GSG CPW electrodes stated (p.2). Electrode signal and ground widths and whether the Au contacts the LN slab or sits on cladding are not stated. Wavelength series on on…"},{"device_id":"renaud2023-3um-838","paper_id":"renaud2023","year":2022,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"nir_below_o","wavelength_nm":838,"length_mm":10,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"mzm_push_pull","vpil_best":0.85,"vpil_source":"derived_dc","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/renaud2023.yaml","notes":"Vpi measured at 1 MHz with a triangle waveform (Methods p.5). Push-pull GSG CPW electrodes stated (p.2). Electrode signal and ground widths and whether the Au contacts the LN slab or sits on cladding are not stated. Wavelength series on on…"},{"device_id":"renaud2023-3um-938","paper_id":"renaud2023","year":2022,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"nir_below_o","wavelength_nm":938,"length_mm":10,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"mzm_push_pull","vpil_best":0.8,"vpil_source":"derived_dc","vpil_q":"approx","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/renaud2023.yaml","notes":"Vpi measured at 1 MHz with a triangle waveform (Methods p.5). Push-pull GSG CPW electrodes stated (p.2). Electrode signal and ground widths and whether the Au contacts the LN slab or sits on cladding are not stated. Wavelength series on on…"},{"device_id":"renaud2023-4um-738","paper_id":"renaud2023","year":2022,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"visible","wavelength_nm":738,"length_mm":10,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"mzm_push_pull","vpil_best":0.79,"vpil_source":"derived_dc","vpil_q":"approx","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/renaud2023.yaml","notes":"Vpi measured at 1 MHz with a triangle waveform (Methods p.5). Push-pull GSG CPW electrodes stated (p.2). Electrode signal and ground widths and whether the Au contacts the LN slab or sits on cladding are not stated. Gap series at 738 nm (F…"},{"device_id":"renaud2023-5um-738","paper_id":"renaud2023","year":2022,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"visible","wavelength_nm":738,"length_mm":10,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"mzm_push_pull","vpil_best":0.93,"vpil_source":"derived_dc","vpil_q":"approx","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/renaud2023.yaml","notes":"Vpi measured at 1 MHz with a triangle waveform (Methods p.5). Push-pull GSG CPW electrodes stated (p.2). Electrode signal and ground widths and whether the Au contacts the LN slab or sits on cladding are not stated. Gap series at 738 nm (F…"},{"device_id":"renaud2023-pm","paper_id":"renaud2023","year":2022,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"phase_shifter","row_kind":"device","band":"visible","wavelength_nm":737,"length_mm":10,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"per_arm_phase_shifter","vpil_best":1,"vpil_source":"derived_dc","vpil_q":"approx","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/renaud2023.yaml","notes":"Phase modulator used for the spectral-shearing demonstration (optical pulses at 737 nm, 1 ns, shift +-6.6 GHz, 100 MHz RF tone of about 20 Vpi) and, with the same 3 um gap design, for 30 GHz EO combs with over 50 lines at 638/738/838 nm. V…"},{"device_id":"sabatti2024-fh","paper_id":"sabatti2024","year":2024,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1536,"length_mm":7.3,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"mzm_push_pull","vpil_best":1.825,"vpil_source":"derived_dc","vpil_q":"","bw3db_ghz":60,"bw_q":"gt","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/sabatti2024.yaml","notes":"Modulated fundamental harmonic of the upconversion chip. Fiber grating coupler efficiency -4 dB at 1550 nm (design wavelength). Vpi*L left to the build step (7.3 mm is the stated MZI modulator length, electrode length not stated). Etch dep…"},{"device_id":"sabatti2024-sh","paper_id":"sabatti2024","year":2024,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"visible","wavelength_nm":768,"length_mm":7.3,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"mzm_push_pull","vpil_best":1.825,"vpil_source":"derived_dc","vpil_q":"","bw3db_ghz":40,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/sabatti2024.yaml","notes":"Second harmonic generated in a 7 mm PPLN after the MZI; inherits Vpi and speed, ER doubled in dB by the quadratic SHG. SH RF power 33 dB below FH in the EO measurement; 1 dB EO-response difference FH vs SH from 20 MHz to 20 GHz. Grating co…"},{"device_id":"saxena2023-a","paper_id":"saxena2023","year":2023,"platform":"SiPh","eo_material":"silicon_plasma_dispersion","device_class":"ring","row_kind":"device","band":"l_band","wavelength_nm":1566.65,"length_mm":null,"integration":"foundry_native","waveguide_platform":"","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":28,"max_line_rate_gbps":40,"max_net_rate_gbps":null,"modulation_format":"NRZ PRBS-13 at 20, 25 and 28 Gb/s; PAM4 at 20 GSps (40 Gb/s); all at 2 Vpp, laser detuned -50 pm from the unbiased reso…","length_q":"","evidence_ref":"data/evidence/saxena2023.yaml","notes":"Measured with the fitted compact model overlaid. Operating wavelength is the laser line (unbiased resonance about 1566.7 nm). Tuning from the polyfit of the measured resonance minima lambda0(v) = 1.5667e-6 + 8.8004e-11 v (m, V; v = reverse…"},{"device_id":"sayem2026a-c125","paper_id":"sayem2026a","year":2026,"platform":"TFLT","eo_material":"lithium_tantalate","device_class":"ring","row_kind":"device","band":"","wavelength_nm":null,"length_mm":1.5,"integration":"monolithic","waveguide_platform":"ltoi_rib","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/sayem2026a.yaml","notes":"Resonance tuning of the coupling modulator phase section, 0 to 25 V DC at 125 C. Tuning value is the batch secant at 25 V from the Fig. 4(e) end point (-35.1 pm; authors give no number). The 125 C curve is strongly nonlinear (steeper at lo…"},{"device_id":"sayem2026a-c25","paper_id":"sayem2026a","year":2026,"platform":"TFLT","eo_material":"lithium_tantalate","device_class":"ring","row_kind":"device","band":"","wavelength_nm":null,"length_mm":1.5,"integration":"monolithic","waveguide_platform":"ltoi_rib","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/sayem2026a.yaml","notes":"Resonance tuning of the coupling modulator phase section, 0 to 25 V DC at 25 C. Tuning value is the batch secant at 25 V from the Fig. 4(e) end point (-13.4 pm; authors give no number). 25 C curve is close to linear. Coupling condition cha…"},{"device_id":"sayem2026a-c95","paper_id":"sayem2026a","year":2026,"platform":"TFLT","eo_material":"lithium_tantalate","device_class":"ring","row_kind":"device","band":"","wavelength_nm":null,"length_mm":1.5,"integration":"monolithic","waveguide_platform":"ltoi_rib","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/sayem2026a.yaml","notes":"Resonance tuning of the coupling modulator phase section, 0 to 25 V DC at 95 C. Tuning value is the batch secant at 25 V from the Fig. 4(e) end point (-34.3 pm; authors give no number). The 95 C curve is strongly nonlinear (steeper at low…"},{"device_id":"sayem2026a-m120","paper_id":"sayem2026a","year":2026,"platform":"TFLT","eo_material":"lithium_tantalate","device_class":"mzm","row_kind":"device","band":"","wavelength_nm":null,"length_mm":7,"integration":"monolithic","waveguide_platform":"ltoi_rib","vpi_convention":"mzm_push_pull","vpil_best":2.38,"vpil_source":"derived_dc","vpil_q":"","bw3db_ghz":50,"bw_q":"gt","bw_method":"sideband","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/sayem2026a.yaml","notes":"Same 7 mm MZM measured at hot-plate temperatures 25, 91 and 120 C (Fig. 2(c) legend); Vpi falls about 10 percent at 120 C. Bandwidth statement is common to the three temperatures (Fig. 3(b) legend 28, 92, 119 C) and is repeated on each row…"},{"device_id":"sayem2026a-m25","paper_id":"sayem2026a","year":2026,"platform":"TFLT","eo_material":"lithium_tantalate","device_class":"mzm","row_kind":"device","band":"","wavelength_nm":null,"length_mm":7,"integration":"monolithic","waveguide_platform":"ltoi_rib","vpi_convention":"mzm_push_pull","vpil_best":2.6599999999999997,"vpil_source":"derived_dc","vpil_q":"","bw3db_ghz":50,"bw_q":"gt","bw_method":"sideband","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/sayem2026a.yaml","notes":"Same 7 mm MZM measured at hot-plate temperatures 25, 91 and 120 C (Fig. 2(c) legend); Vpi falls about 10 percent at 120 C. Bandwidth statement is common to the three temperatures (Fig. 3(b) legend 28, 92, 119 C) and is repeated on each row…"},{"device_id":"sayem2026a-m91","paper_id":"sayem2026a","year":2026,"platform":"TFLT","eo_material":"lithium_tantalate","device_class":"mzm","row_kind":"device","band":"","wavelength_nm":null,"length_mm":7,"integration":"monolithic","waveguide_platform":"ltoi_rib","vpi_convention":"mzm_push_pull","vpil_best":2.52,"vpil_source":"derived_dc","vpil_q":"","bw3db_ghz":50,"bw_q":"gt","bw_method":"sideband","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/sayem2026a.yaml","notes":"Same 7 mm MZM measured at hot-plate temperatures 25, 91 and 120 C (Fig. 2(c) legend); Vpi falls about 10 percent at 120 C. Bandwidth statement is common to the three temperatures (Fig. 3(b) legend 28, 92, 119 C) and is repeated on each row…"},{"device_id":"sayem2026b-cm","paper_id":"sayem2026b","year":2026,"platform":"TFLT","eo_material":"lithium_tantalate","device_class":"ring","row_kind":"device","band":"c_band","wavelength_nm":null,"length_mm":2,"integration":"monolithic","waveguide_platform":"ltoi_rib","vpi_convention":"unspecified","vpil_best":0.6,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/sayem2026b.yaml","notes":"Resonant coupling modulator (tunable directional couplers designed 50:50 near C-band), DC bias only: no RF/bandwidth, loss, Q or wavelength reported for this device; design and system results deferred to a separate work. Vpi 3 V is the vol…"},{"device_id":"sayem2026c-a","paper_id":"sayem2026c","year":2026,"platform":"TFLT","eo_material":"lithium_tantalate","device_class":"mzm","row_kind":"device","band":"nir_below_o","wavelength_nm":1071,"length_mm":7,"integration":"monolithic","waveguide_platform":"ltoi_rib","vpi_convention":"mzm_push_pull","vpil_best":1.62,"vpil_source":"reported_dc","vpil_q":"approx","bw3db_ghz":50,"bw_q":"gt","bw_method":"sideband","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/sayem2026c.yaml","notes":"Vpi 2.4 V x 7 mm is 1.68 V cm versus 1.62 read from Fig. 2(c). RF index from a separate unterminated device. Fig. 3(d) peaks near +1.2 dB at about 11 GHz (first point about -1.8 dB at 4 GHz); roll-off relative to 0 dB normalisation. Fig. 2…"},{"device_id":"sayem2026c-b","paper_id":"sayem2026c","year":2026,"platform":"TFLT","eo_material":"lithium_tantalate","device_class":"mzm","row_kind":"device","band":"nir_below_o","wavelength_nm":984,"length_mm":7,"integration":"monolithic","waveguide_platform":"ltoi_rib","vpi_convention":"mzm_push_pull","vpil_best":1.45,"vpil_source":"reported_dc","vpil_q":"approx","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/sayem2026c.yaml","notes":"Same device as the headline row; only VpiL versus wavelength reported."},{"device_id":"sayem2026c-c","paper_id":"sayem2026c","year":2026,"platform":"TFLT","eo_material":"lithium_tantalate","device_class":"mzm","row_kind":"device","band":"o_band","wavelength_nm":1311,"length_mm":7,"integration":"monolithic","waveguide_platform":"ltoi_rib","vpi_convention":"mzm_push_pull","vpil_best":2.07,"vpil_source":"reported_dc","vpil_q":"approx","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/sayem2026c.yaml","notes":"Same device as the headline row; only VpiL versus wavelength reported."},{"device_id":"sayem2026c-d","paper_id":"sayem2026c","year":2026,"platform":"TFLT","eo_material":"lithium_tantalate","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1551,"length_mm":7,"integration":"monolithic","waveguide_platform":"ltoi_rib","vpi_convention":"mzm_push_pull","vpil_best":2.57,"vpil_source":"reported_dc","vpil_q":"approx","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/sayem2026c.yaml","notes":"EO response also measured at 1551 nm; nearly identical to 1071 nm (Fig. 3(d)). Same device as the headline row."},{"device_id":"schwarzenberger2023-a","paper_id":"schwarzenberger2023","year":2023,"platform":"Polymer","eo_material":"eo_polymer","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":1,"integration":"polymer_backfill","waveguide_platform":"soi_slot","vpi_convention":"mzm_push_pull","vpil_best":0.19,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/schwarzenberger2023.yaml","notes":"Initial state right after poling and crosslinking: UpiL 1.9 V mm on the 1 mm device at 1550 nm (so Upi 1.9 V; Upi itself is not stated and not entered). Push-pull GSG operation stated in Sec. Device structure. r33 57 pm/V is the authors es…"},{"device_id":"schwarzenberger2023-b","paper_id":"schwarzenberger2023","year":2023,"platform":"Polymer","eo_material":"eo_polymer","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":1,"integration":"polymer_backfill","waveguide_platform":"soi_slot","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":100,"max_line_rate_gbps":200,"max_net_rate_gbps":null,"modulation_format":"PAM4 100 GBd (200 Gbit/s) below 20% SD-FEC at 2.8 Vpp nominal (about 2.1 Vpp on chip, estimated); PAM4 up to 80 GBd (16…","length_q":"","evidence_ref":"data/evidence/schwarzenberger2023.yaml","notes":"Same device type after high-temperature storage (geometry columns repeat the as-poled row, from the paper device description of \"our devices\") (physical device identity with the as-poled row is not stated). In-device Upi increased by a fac…"},{"device_id":"schwarzenberger2023a-a","paper_id":"schwarzenberger2023a","year":2023,"platform":"Polymer","eo_material":"eo_polymer","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1532,"length_mm":1,"integration":"polymer_backfill","waveguide_platform":"soi_slot","vpi_convention":"mzm_push_pull","vpil_best":0.092,"vpil_source":"derived_dc","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":100,"max_line_rate_gbps":140,"max_net_rate_gbps":null,"modulation_format":"PAM4 70 GBd (140 Gbit/s) at 11 K, 1.4 Vpp, 2 dBm on chip: BER 2.3e-2 (below 20% SD-FEC); OOK terminated: 60 Gb/s below…","length_q":"","evidence_ref":"data/evidence/schwarzenberger2023a.yaml","notes":"Headline: Upi 0.92 V at 11 K (abstract; body prints 0.9 V measured at RT and at 11 K on a 1 mm device, procedure per their ref. 9: frequency, wavelength and arm convention not stated; drive push_pull and vpi_convention mzm_push_pull are de…"},{"device_id":"schwarzenberger2023a-b","paper_id":"schwarzenberger2023a","year":2023,"platform":"Polymer","eo_material":"eo_polymer","device_class":"mzm","row_kind":"device","band":"","wavelength_nm":null,"length_mm":1,"integration":"polymer_backfill","waveguide_platform":"soi_slot","vpi_convention":"mzm_push_pull","vpil_best":0.09,"vpil_source":"derived_dc","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/schwarzenberger2023a.yaml","notes":"Same single-GSG slot-arm geometry as the 11 K row (drive push_pull and vpi_convention mzm_push_pull derived, not stated by the authors). Room-temperature operating point of the cryogenic device: body states Upi 0.9 V measured both at RT an…"},{"device_id":"schwarzenberger2026-a","paper_id":"schwarzenberger2026","year":2026,"platform":"Polymer","eo_material":"eo_polymer","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":0.28,"integration":"polymer_backfill","waveguide_platform":"soi_slot","vpi_convention":"mzm_push_pull","vpil_best":0.067,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":74,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":204,"max_line_rate_gbps":528,"max_net_rate_gbps":412.5,"modulation_format":"PAM4 up to 204 GBd (408 Gbit/s) and 192 GBd (384 Gbit/s); PAM6 up to 176 GBd (455 Gbit/s), highest below the 20 percent…","length_q":"","evidence_ref":"data/evidence/schwarzenberger2026.yaml","notes":"Single device. All numbers from the publisher-formatted KIT repository copy of the JLT article (17 PDF pages, 2026 IEEE notice; license not verifiable from the copy or from Crossref, so redistribution stays restricted_local_only). Vpi 2.4…"},{"device_id":"schwarzenberger2026a-a","paper_id":"schwarzenberger2026a","year":2026,"platform":"Polymer","eo_material":"eo_polymer","device_class":"mzm","row_kind":"device","band":"o_band","wavelength_nm":1310,"length_mm":0.5,"integration":"polymer_backfill","waveguide_platform":"soi_slot","vpi_convention":"mzm_push_pull","vpil_best":0.046,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":20,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":192,"max_line_rate_gbps":384,"max_net_rate_gbps":323.5,"modulation_format":"PAM4 192 GBd (384 Gbit/s) at 0.95 Vpp: BER 2.7e-2 (below 20% SD-FEC), AIR 332.4, NDR 310.9 Gbit/s (best NDR under sub-1…","length_q":"","evidence_ref":"data/evidence/schwarzenberger2026a.yaml","notes":"Single device. Vpi 0.92 V from a 1 kHz triangular sweep at 1310 nm (UpiL 0.46 V mm reported, stored as 0.046 V cm). Mixed operating points in the max_* columns: max_baud 192 GBd, max_line_rate 384 Gbit/s and drive 0.95 Vpp belong to the 19…"},{"device_id":"shabaninezhad2025-a","paper_id":"shabaninezhad2025","year":2024,"platform":"Other","eo_material":"transparent_conducting_oxide","device_class":"eam","row_kind":"design","band":"c_band","wavelength_nm":1550,"length_mm":0.0062,"integration":"","waveguide_platform":"plasmonic_mim","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":123.9,"bw_q":"","bw_method":"indirect","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/shabaninezhad2025.yaml","notes":"Design study, all simulated (COMSOL 2D modes, 3D beam envelope). Two tapers of length LT each, so active length = 2 x LT (derived; consistent with the Eq. 12 bandwidth for the RC estimate). ER is the maximum over gate voltage of 10 log(Pon…"},{"device_id":"shabaninezhad2025-b","paper_id":"shabaninezhad2025","year":2024,"platform":"Other","eo_material":"transparent_conducting_oxide","device_class":"eam","row_kind":"design","band":"c_band","wavelength_nm":1550,"length_mm":0.0041,"integration":"","waveguide_platform":"plasmonic_mim","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":185.4,"bw_q":"","bw_method":"indirect","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/shabaninezhad2025.yaml","notes":"Design study, all simulated (COMSOL 2D modes, 3D beam envelope). Two tapers of length LT each, so active length = 2 x LT (derived; consistent with the Eq. 12 bandwidth for the RC estimate). ER is the maximum over gate voltage of 10 log(Pon…"},{"device_id":"shabaninezhad2025-c","paper_id":"shabaninezhad2025","year":2024,"platform":"Other","eo_material":"transparent_conducting_oxide","device_class":"eam","row_kind":"design","band":"c_band","wavelength_nm":1550,"length_mm":0.0036,"integration":"","waveguide_platform":"plasmonic_mim","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":210.3,"bw_q":"","bw_method":"indirect","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/shabaninezhad2025.yaml","notes":"Design study, all simulated (COMSOL 2D modes, 3D beam envelope). Two tapers of length LT each, so active length = 2 x LT (derived; consistent with the Eq. 12 bandwidth for the RC estimate). ER is the maximum over gate voltage of 10 log(Pon…"},{"device_id":"shamsansari2021-a","paper_id":"shamsansari2021","year":2021,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"","wavelength_nm":null,"length_mm":5,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"unspecified","vpil_best":2.15,"vpil_source":"derived_dc","vpil_q":"","bw3db_ghz":50,"bw_q":"approx","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/shamsansari2021.yaml","notes":"Intensity modulator on the same chip as a flip-chip bonded DFB laser (transmitter); on-chip power after the MZI about 25 mW (estimate) at about 0.8 A. Vpi*L (2.15 V cm for 5 mm) left to the build step. Etch depth 300 nm derived. 50 ohm ter…"},{"device_id":"shawon2024-a","paper_id":"shawon2024","year":2023,"platform":"SiPh","eo_material":"silicon_plasma_dispersion","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":1.555,"integration":"foundry_native","waveguide_platform":"soi_rib","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":2.5,"bw_q":"approx","bw_method":"link_eoe","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/shawon2024.yaml","notes":"Operating point {lambda_c, phi_quad, theta_DC, tau} = {1550 nm, pi/2, pi, 1/2} (anti-resonant rings). Bandwidth: Fig. 21(c) link-gain S21 at 0 dBm RF input with a 50 GHz photodiode, absolute link gain (about -29 dB at low frequency); the p…"},{"device_id":"shen2021-a","paper_id":"shen2021","year":2021,"platform":"SiPh","eo_material":"silicon_plasma_dispersion","device_class":"ring","row_kind":"device","band":"nir_above_u","wavelength_nm":1960,"length_mm":0.0628,"integration":"foundry_native","waveguide_platform":"soi_rib","vpi_convention":"resonance_tuning_derived","vpil_best":0.975,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":15,"bw_q":"gt","bw_method":"eo_s21","max_baud_gbd":45,"max_line_rate_gbps":45,"max_net_rate_gbps":null,"modulation_format":"NRZ-OOK; 40 Gb/s BER under the 7% FEC threshold 3.8e-3 above 0 dBm received power; 45 Gb/s BER 8.85e-4 at 3 dBm with RR…","length_q":"","evidence_ref":"data/evidence/shen2021.yaml","notes":"Version: all values from arXiv 2104.01163v1 (5 pp, short preprint titled 'High-speed silicon microring modulator at 2-um waveband'), not the Photonics Research 10(3) A35 (2022) version of record (Crossref title adds 'with analysis and obse…"},{"device_id":"shen2024-a","paper_id":"shen2024","year":2023,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"","wavelength_nm":null,"length_mm":500,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"mzm_push_pull","vpil_best":2.2,"vpil_source":"reported_dc","vpil_q":"approx","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":0.0002,"max_net_rate_gbps":null,"modulation_format":"eye diagrams at Vpp 1 mV and 3 mV, 200 kb/s, room temperature (normal-metal RC limited)","length_q":"","evidence_ref":"data/evidence/shen2024.yaml","notes":"Vpi and length refer to push-pull MZM with the total modulation length split over two spiral arms (convention and drive inferred: GSG line between the two arms, authors do not say push-pull). Length column is the per-arm length. Vpi 42 mV…"},{"device_id":"shen2024-b","paper_id":"shen2024","year":2023,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"","wavelength_nm":null,"length_mm":200,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"mzm_push_pull","vpil_best":2.2,"vpil_source":"reported_dc","vpil_q":"approx","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/shen2024.yaml","notes":"Vpi and length refer to push-pull MZM with the total modulation length split over two spiral arms (convention and drive inferred: GSG line between the two arms, authors do not say push-pull). Length column is the per-arm length. Vpi 110 mV…"},{"device_id":"shen2024-c","paper_id":"shen2024","year":2023,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"","wavelength_nm":null,"length_mm":100,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"mzm_push_pull","vpil_best":2.2,"vpil_source":"reported_dc","vpil_q":"approx","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/shen2024.yaml","notes":"Vpi and length refer to push-pull MZM with the total modulation length split over two spiral arms (convention and drive inferred: GSG line between the two arms, authors do not say push-pull). Length column is the per-arm length. Vpi 230 mV…"},{"device_id":"shen2024-d","paper_id":"shen2024","year":2023,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"","wavelength_nm":null,"length_mm":100,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"mzm_push_pull","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":17.5,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":4,"max_net_rate_gbps":null,"modulation_format":"eye diagrams at Vpp 10 mV, 2 and 4 Gb/s, cryogenic (format not stated; 6 GHz oscilloscope)","length_q":"","evidence_ref":"data/evidence/shen2024.yaml","notes":"Vpi and length refer to push-pull MZM with the total modulation length split over two spiral arms (convention and drive inferred: GSG line between the two arms, authors do not say push-pull). Length column is the per-arm length. 3 dB EO ba…"},{"device_id":"shen2024-e","paper_id":"shen2024","year":2023,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"","wavelength_nm":null,"length_mm":100,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"mzm_push_pull","vpil_best":3.8,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":1,"max_line_rate_gbps":1,"max_net_rate_gbps":null,"modulation_format":"NRZ PRBS7 at 1 Gb/s: RSFQ 5 mV Vpp (SNR 3.1 dB, BER 2.2e-2 calculated); AWG 10 mV (7.0 dB, 7.7e-4) and 20 mV (10.4 dB,…","length_q":"","evidence_ref":"data/evidence/shen2024.yaml","notes":"Vpi and length refer to push-pull MZM with the total modulation length split over two spiral arms (convention and drive inferred: GSG line between the two arms, authors do not say push-pull). Length column is the per-arm length. Packaged m…"},{"device_id":"shen2025-a","paper_id":"shen2025","year":2024,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1547.1,"length_mm":1,"integration":"monolithic","waveguide_platform":"lnoi_loaded_sin","vpi_convention":"mzm_push_pull","vpil_best":0.21,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":110,"bw_q":"gt","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/shen2025.yaml","notes":"VERSION: version of record (Laser Photonics Rev. 19, 2401092) with the Supporting Information (docx text, cited by section). Rows a-e are wavelength operating points of one 1 mm push-pull slow-light MZM (physical device shared with shen202…"},{"device_id":"shen2025-b","paper_id":"shen2025","year":2024,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1546.92,"length_mm":1,"integration":"monolithic","waveguide_platform":"lnoi_loaded_sin","vpi_convention":"mzm_push_pull","vpil_best":0.4,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":110,"bw_q":"gt","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/shen2025.yaml","notes":"Operating point of the same 1 mm slow-light MZM as shen2025-a (10 kHz triangular Vpi sweep, Fig. 2(e); EO S21 in Fig. 3(b), flat beyond 110 GHz, bound equal to the 110 GHz LCA limit). Data-transmission results are not assigned to this wave…"},{"device_id":"shen2025-c","paper_id":"shen2025","year":2024,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1546.7,"length_mm":1,"integration":"monolithic","waveguide_platform":"lnoi_loaded_sin","vpi_convention":"mzm_push_pull","vpil_best":0.7,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":110,"bw_q":"gt","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/shen2025.yaml","notes":"Operating point of the same 1 mm slow-light MZM as shen2025-a (10 kHz triangular Vpi sweep, Fig. 2(e); EO S21 in Fig. 3(b), flat beyond 110 GHz, bound equal to the 110 GHz LCA limit). Data-transmission results are not assigned to this wave…"},{"device_id":"shen2025-d","paper_id":"shen2025","year":2024,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1546.1,"length_mm":1,"integration":"monolithic","waveguide_platform":"lnoi_loaded_sin","vpi_convention":"mzm_push_pull","vpil_best":0.98,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":110,"bw_q":"gt","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/shen2025.yaml","notes":"Operating point of the same 1 mm slow-light MZM as shen2025-a (10 kHz triangular Vpi sweep, Fig. 2(e); EO S21 in Fig. 3(b), flat beyond 110 GHz, bound equal to the 110 GHz LCA limit). Data-transmission results are not assigned to this wave…"},{"device_id":"shen2025-design","paper_id":"shen2025","year":2024,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"design","band":"","wavelength_nm":null,"length_mm":1,"integration":"monolithic","waveguide_platform":"lnoi_loaded_sin","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":235,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/shen2025.yaml","notes":"Simulated values of the fabricated electrode design (Fig. 1(g),(h)). The 3 dB EO bandwidth 235 GHz is simulated with the optical group index n_g = 3.09 used in Fig. 1(g),(h) (not the much larger slow-light group index of Fig. 1(c),(d)); th…"},{"device_id":"shen2025-e","paper_id":"shen2025","year":2024,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1535,"length_mm":1,"integration":"monolithic","waveguide_platform":"lnoi_loaded_sin","vpi_convention":"mzm_push_pull","vpil_best":2.17,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/shen2025.yaml","notes":"Regular (non-slow-light) operating point of the same MZM at 1535 nm: Vpi 21.7 V (Fig. 2(e)), Vpi*L 2.17 V cm and ER 22 dB from supplement Section 8; Fig. 2(g) shows the point at about 2.2 V cm. No EO S21 is reported at this wavelength. Fig…"},{"device_id":"shen2025-sys","paper_id":"shen2025","year":2024,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":null,"length_mm":1,"integration":"monolithic","waveguide_platform":"lnoi_loaded_sin","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":180,"max_line_rate_gbps":300,"max_net_rate_gbps":null,"modulation_format":"NRZ 120/150/180 Gbps; PAM4 200/220/240 Gbps (100/110/120 GBd); PAM6 257 Gbps (100 GBd); PAM8 270 Gbps (90 GBd) and 300…","length_q":"","evidence_ref":"data/evidence/shen2025.yaml","notes":"Data-transmission results of the 1 mm slow-light MZM; the carrier wavelength of the eye-diagram experiments is not stated (Fig. 4(l) scans about 1544.9-1547.1 nm, 100 Gbps NRZ BER below 4e-2 over a 2.2 nm range, 4.4 nm with the symmetric b…"},{"device_id":"shen2026-a","paper_id":"shen2026","year":2026,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"nir_below_o","wavelength_nm":1064,"length_mm":5.8,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"unspecified","vpil_best":1.8,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":100,"bw_q":"gt","bw_method":"sideband","max_baud_gbd":null,"max_line_rate_gbps":160,"max_net_rate_gbps":null,"modulation_format":"100 Gb/s NRZ (SNR 14.61 dB); 160 Gb/s PAM4 (post-FFE TDECQ 0.04 dB)","length_q":"","evidence_ref":"data/evidence/shen2026.yaml","notes":"Vpi 3.1 V is the label in Fig. 3(d) (2 MHz sine, null bias); VpiL 1.8 V cm stated. Fig. 3(c) S21 is a fit plus VNA and OSA points to 110 GHz and the paper states only 'exceeding 100 GHz'. S11 about -20 dB. DFB laser over 10 mW on-chip; tun…"},{"device_id":"sia2022-a","paper_id":"sia2022","year":2022,"platform":"SiPh","eo_material":"silicon_plasma_dispersion","device_class":"mzm","row_kind":"device","band":"nir_above_u","wavelength_nm":1970,"length_mm":null,"integration":"foundry_native","waveguide_platform":"soi_rib","vpi_convention":"unspecified","vpil_best":0.7,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":16.2,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/sia2022.yaml","notes":"Version: arXiv 2210.06994v1 (9 pp, IEEE template placeholder header), no journal DOI located. Ring-assisted MZM (racetrack phase shifter on one arm of a symmetric MZI), measured at Vbias = 1 V reverse (paper quotes the magnitude; negative…"},{"device_id":"sia2022-b","paper_id":"sia2022","year":2022,"platform":"SiPh","eo_material":"silicon_plasma_dispersion","device_class":"mzm","row_kind":"device","band":"nir_above_u","wavelength_nm":1970,"length_mm":null,"integration":"foundry_native","waveguide_platform":"soi_rib","vpi_convention":"unspecified","vpil_best":0.8,"vpil_source":"reported_dc","vpil_q":"approx","bw3db_ghz":17.5,"bw_q":"gt","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/sia2022.yaml","notes":"Version: arXiv 2210.06994v1 (9 pp, IEEE template placeholder header), no journal DOI located. Ring-assisted MZM (racetrack phase shifter on one arm of a symmetric MZI), measured at Vbias = 3 V reverse (paper quotes the magnitude; negative…"},{"device_id":"sia2022-c","paper_id":"sia2022","year":2022,"platform":"SiPh","eo_material":"silicon_plasma_dispersion","device_class":"mzm","row_kind":"device","band":"nir_above_u","wavelength_nm":1970,"length_mm":null,"integration":"foundry_native","waveguide_platform":"soi_rib","vpi_convention":"unspecified","vpil_best":0.93,"vpil_source":"reported_dc","vpil_q":"approx","bw3db_ghz":17.5,"bw_q":"gt","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/sia2022.yaml","notes":"Version: arXiv 2210.06994v1 (9 pp, IEEE template placeholder header), no journal DOI located. Ring-assisted MZM (racetrack phase shifter on one arm of a symmetric MZI), measured at Vbias = 5 V reverse (paper quotes the magnitude; negative…"},{"device_id":"sia2022-d","paper_id":"sia2022","year":2022,"platform":"SiPh","eo_material":"silicon_plasma_dispersion","device_class":"mzm","row_kind":"device","band":"nir_above_u","wavelength_nm":1970,"length_mm":null,"integration":"foundry_native","waveguide_platform":"soi_rib","vpi_convention":"unspecified","vpil_best":1.13,"vpil_source":"reported_dc","vpil_q":"approx","bw3db_ghz":17.5,"bw_q":"gt","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/sia2022.yaml","notes":"Version: arXiv 2210.06994v1 (9 pp, IEEE template placeholder header), no journal DOI located. Ring-assisted MZM (racetrack phase shifter on one arm of a symmetric MZI), measured at Vbias = 7 V reverse (paper quotes the magnitude; negative…"},{"device_id":"singer2025-a","paper_id":"singer2025","year":2025,"platform":"Polymer","eo_material":"eo_polymer","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":1,"integration":"polymer_backfill","waveguide_platform":"soi_slot","vpi_convention":"mzm_push_pull","vpil_best":0.1,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":56,"max_line_rate_gbps":112,"max_net_rate_gbps":null,"modulation_format":"PAM4 Gray-coded, PRBS 2^11-1; without RF amplifier 24, 48, 54 and 56 GBd at 299, 253, 252 and 265 mVpp; with 11 dB RF a…","length_q":"","evidence_ref":"data/evidence/singer2025.yaml","notes":"Single device (one of an array of eight MZMs on the die; the O-band 0.5 mm device with 0.46 V mm and 0.92 V is from an earlier paper and not entered). Vpi 1 V stated for the 1 mm device after poling, measurement frequency not stated; push-…"},{"device_id":"soma2025-a","paper_id":"soma2025","year":2025,"platform":"Polymer","eo_material":"eo_polymer","device_class":"free_space","row_kind":"device","band":"c_band","wavelength_nm":1563.15,"length_mm":0.06,"integration":"polymer_backfill","waveguide_platform":"other","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":0.046,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":0.05,"max_line_rate_gbps":0.1,"max_net_rate_gbps":null,"modulation_format":"NRZ 50 Mbps (Vpp 0.2 V); PAM4 100 Mbps (Vpp 0.8 V); PRBS 2^9-1; BER below 7% HD-FEC","length_q":"","evidence_ref":"data/evidence/soma2025.yaml","notes":"Free-space metasurface, not a waveguide device: no Vpi. Authors' required voltage Vreq = 2.5 V (voltage that shifts the resonance by one linewidth, lambda_res/Q/S, p.5) and efficiency eta = dR/Vreq = 0.25 1/V; reflectance swing dR = 0.63 b…"},{"device_id":"soma2025-b","paper_id":"soma2025","year":2025,"platform":"Polymer","eo_material":"eo_polymer","device_class":"free_space","row_kind":"device","band":"c_band","wavelength_nm":1562.7,"length_mm":0.01,"integration":"polymer_backfill","waveguide_platform":"other","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":0.38,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":1,"max_line_rate_gbps":1.6,"max_net_rate_gbps":null,"modulation_format":"NRZ 1.0 Gbps (no DSP); PAM4 up to 1.6 Gbps (0.8 GBd, with DSP equalization); Vpp 1 V; PRBS","length_q":"","evidence_ref":"data/evidence/soma2025.yaml","notes":"Free-space metasurface, not a waveguide device: no Vpi. Authors' Vreq = 11.2 V and S = 0.18 nm/V; the quoted Vreq is not reproduced by lambda/Q/S from the rounded S and Q (about 13 V), cause not stated. Reflectance swing dR = 0.68 only in…"},{"device_id":"starnault2026-a","paper_id":"starnault2026","year":2026,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"o_band","wavelength_nm":1310,"length_mm":null,"integration":"monolithic","waveguide_platform":"","vpi_convention":"unspecified","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"indirect","max_baud_gbd":225,"max_line_rate_gbps":null,"max_net_rate_gbps":540,"modulation_format":"PAM4 225 GBd over 2 km (net 421 Gb/s, headline 448 Gbps PAM4, BER 1.51e-3); PAM6 175 GBd (net 410 Gb/s, 2 km); PAM8 162…","length_q":"","evidence_ref":"data/evidence/starnault2026.yaml","notes":"Vpi 2.2 V is a differential low-MHz value stated for 'the BW oDACs'; 6 dB bandwidth is simulated and 'well exceeding 100 GHz'. 600 mV differential drive (peak-to-peak not stated). ER 3.76 dB from the 225 GBd PAM4 eye (Fig. 2(g)). 20 dBm QD…"},{"device_id":"starnault2026-b","paper_id":"starnault2026","year":2026,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"iq_mzm","row_kind":"device","band":"o_band","wavelength_nm":1310,"length_mm":null,"integration":"monolithic","waveguide_platform":"","vpi_convention":"unspecified","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"indirect","max_baud_gbd":187.5,"max_line_rate_gbps":null,"max_net_rate_gbps":1200,"modulation_format":"DP-16-QAM 125 GBd (net 800 Gb/s; HD-FEC at 10 km, c-FEC at 20 km); DP-16-QAM 187.5 GBd over 10 km (net 1.2 Tb/s, 25% SD…","length_q":"","evidence_ref":"data/evidence/starnault2026.yaml","notes":"Single-polarization BW-IQM with four emulated logic gates; dual polarization emulated optically. Vpi and simulated 6 dB bandwidth come from the shared sentence on 'the BW oDACs' (applied to both rows). Receiver balanced PDs limit to 70 GHz…"},{"device_id":"steckler2025-a","paper_id":"steckler2025","year":2025,"platform":"GeSi EAM","eo_material":"germanium_silicon_eam","device_class":"eam","row_kind":"device","band":"l_band","wavelength_nm":1580,"length_mm":0.04,"integration":"monolithic","waveguide_platform":"","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":100,"bw_q":"approx","bw_method":"eo_s21","max_baud_gbd":160,"max_line_rate_gbps":160,"max_net_rate_gbps":null,"modulation_format":"NRZ-OOK; eye diagrams at 120, 140 and 160 Gbit/s (1575 nm)","length_q":"","evidence_ref":"data/evidence/steckler2025.yaml","notes":"Headline device for the 140 Gbit/s result. Bandwidth at -3 V bias, 1580 nm, 2 dBm at fiber tip; response normalized in Fig. 3(f) (reference frequency not stated), measured 0.1-110 GHz on a 110 GHz LCA; the -3 dB crossing is seen near 100 G…"},{"device_id":"steckler2025-b","paper_id":"steckler2025","year":2025,"platform":"GeSi EAM","eo_material":"germanium_silicon_eam","device_class":"eam","row_kind":"device","band":"l_band","wavelength_nm":1580,"length_mm":0.02,"integration":"monolithic","waveguide_platform":"","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":110,"bw_q":"gt","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/steckler2025.yaml","notes":"Bandwidth exceeds the 110 GHz instrument limit at -3 V, 1580 nm (Fig. 3(e) response about -2.4 dB at 110 GHz, read by eye, not entered); Table 1 gives >110 (approx 140) as an estimate, not entered. RC estimate about 150 GHz from R=84.8 ohm…"},{"device_id":"steckler2025-c","paper_id":"steckler2025","year":2025,"platform":"GeSi EAM","eo_material":"germanium_silicon_eam","device_class":"eam","row_kind":"device","band":"u_band","wavelength_nm":1635,"length_mm":0.04,"integration":"monolithic","waveguide_platform":"","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/steckler2025.yaml","notes":"Pure-Ge comparison EAM of identical geometry; maximum extinction near 1635 nm in the L-band. Dynamic response not measured (EDFA limited to about 1600 nm). Insertion loss only in Fig. 3(a,b) curves, not entered. Dark current about 50 nA at…"},{"device_id":"steckler2025-d","paper_id":"steckler2025","year":2025,"platform":"GeSi EAM","eo_material":"germanium_silicon_eam","device_class":"eam","row_kind":"device","band":"u_band","wavelength_nm":1635,"length_mm":0.02,"integration":"monolithic","waveguide_platform":"","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/steckler2025.yaml","notes":"Pure-Ge comparison EAM of identical geometry; maximum extinction near 1635 nm in the L-band. Dynamic response not measured (EDFA limited to about 1600 nm). Insertion loss only in Fig. 3(a,b) curves, not entered. Dark current about 50 nA at…"},{"device_id":"su2026-a","paper_id":"su2026","year":2026,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":1,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"mzm_push_pull","vpil_best":1.3,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":110,"bw_q":"gt","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/su2026.yaml","notes":"VpiL from a 100 kHz sawtooth, Fig. 3(c) (Vpi about 13 V at 1 mm, not stated). 3 dB bandwidth exceeds the 110 GHz instrument limit; S11 below -8 dB (text). 11.81 dB is total loss incl. gratings. 8.2 dB/cm computed from ring Q 2.0e5 (air-cla…"},{"device_id":"sun2026-a","paper_id":"sun2026","year":2026,"platform":"SiPh","eo_material":"silicon_plasma_dispersion","device_class":"ring","row_kind":"device","band":"o_band","wavelength_nm":1310,"length_mm":null,"integration":"foundry_native","waveguide_platform":"soi_rib","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/sun2026.yaml","notes":"Resonance range and std 2.5x smaller than simple rings (sim 5x). Radii 5, 10 um; gaps 60-140 nm; equivalent loss about 8 dB/cm higher. Values read from repeated markers in Fig. 3(e) (median, convention aa)."},{"device_id":"sun2026-b","paper_id":"sun2026","year":2026,"platform":"SiPh","eo_material":"silicon_plasma_dispersion","device_class":"ring","row_kind":"device","band":"o_band","wavelength_nm":1310,"length_mm":null,"integration":"foundry_native","waveguide_platform":"soi_rib","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/sun2026.yaml","notes":"Reference ring on the same wafer, same junction offset. Stable ring phase efficiency about 15 percent higher (text). Values read from repeated markers in Fig. 3(e) (median, convention aa)."},{"device_id":"sun2026a-a","paper_id":"sun2026a","year":2026,"platform":"BTO","eo_material":"barium_titanate","device_class":"free_space","row_kind":"device","band":"l_band","wavelength_nm":1579.2,"length_mm":2,"integration":"epitaxial_on_silicon","waveguide_platform":"other","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/sun2026a.yaml","notes":"Free-space metasurface, not a waveguide device: no Vpi. Transmittance modulation efficiency eta_mod = absolute dT per volt at the operating wavelength, maximum about 0.014 1/V over 9-16 V (Fig. 3e, p.8); transmittance contrast about 0.25.…"},{"device_id":"sun2026a-b","paper_id":"sun2026a","year":2026,"platform":"BTO","eo_material":"barium_titanate","device_class":"free_space","row_kind":"device","band":"","wavelength_nm":null,"length_mm":0.3,"integration":"epitaxial_on_silicon","waveguide_platform":"other","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":0.8,"bw_q":"approx","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/sun2026a.yaml","notes":"Free-space metasurface, not a waveguide device: no Vpi. Headline device: eta_mod about 0.020 1/V (calculated from the Fano-fit maximum slope 0.303 1/nm times the 0-20 V shift rate 0.065 nm/V, Supp. Note 6 p.33), r_eff about 151 pm/V (mean…"},{"device_id":"taghavi2022a-a","paper_id":"taghavi2022a","year":2022,"platform":"Polymer","eo_material":"eo_polymer","device_class":"mzm","row_kind":"device","band":"l_band","wavelength_nm":1620,"length_mm":1,"integration":"polymer_backfill","waveguide_platform":"soi_slot","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/taghavi2022a.yaml","notes":"VPI CONTRADICTION kept visible (audit F1, 2026-10-03): the abstract (p.1) says measurement results indicate VpiL below 1.2 V.mm 'are possible' for balanced MZMs with this slot, but the only measurement of this 1 mm device, Fig. 11 (p.12),…"},{"device_id":"taghavi2022a-sim","paper_id":"taghavi2022a","year":2022,"platform":"Polymer","eo_material":"eo_polymer","device_class":"mzm","row_kind":"design","band":"","wavelength_nm":null,"length_mm":null,"integration":"polymer_backfill","waveguide_platform":"soi_slot","vpi_convention":"unspecified","vpil_best":0.035,"vpil_source":"reported_dc","vpil_q":"approx","bw3db_ghz":39,"bw_q":"","bw_method":"indirect","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/taghavi2022a.yaml","notes":"Projection, not a fabricated device: the measured devices use lightly doped silicon. Model parameters in Table 1 (p.5): r33 100 pm/V assumed, arm length 0.5 mm, slot 40 nm, TiO2 5 nm. Fig. 12 VpiL panel (left in the render; the caption lab…"},{"device_id":"taghavi2024-a","paper_id":"taghavi2024","year":2024,"platform":"Other","eo_material":"ferroelectric_nematic_lc","device_class":"mzm","row_kind":"device","band":"l_band","wavelength_nm":null,"length_mm":0.5,"integration":"polymer_backfill","waveguide_platform":"other","vpi_convention":"mzm_push_pull","vpil_best":0.025,"vpil_source":"reported_dc","vpil_q":"approx","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/taghavi2024.yaml","notes":"DC and AC operating points of one 0.5 mm push-pull MZM (Table 2, p.22: Vpi 0.5 V DC and 51.4 V AC, VpiLalpha 1.05 and 107.94 V.dB, dn/dV 4.04e-3 per V, dkappa/dV 4.54e-5 per V, ER 26 dB). The AC result is an estimate (S21 plus analytical p…"},{"device_id":"taghavi2024-b","paper_id":"taghavi2024","year":2024,"platform":"Other","eo_material":"ferroelectric_nematic_lc","device_class":"mzm","row_kind":"device","band":"l_band","wavelength_nm":null,"length_mm":0.5,"integration":"polymer_backfill","waveguide_platform":"other","vpi_convention":"mzm_push_pull","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/taghavi2024.yaml","notes":"AC (Pockels) operating point of the same 0.5 mm MZM as taghavi2024-a. The AC values are estimates from S21 plus analytical post-processing (r33 about 24 pm/V), not a direct Vpi measurement. r_eff from the authors own estimate (Eq. 3, Metho…"},{"device_id":"taghavi2026-a","paper_id":"taghavi2026","year":2026,"platform":"Other","eo_material":"ferroelectric_nematic_lc","device_class":"ring","row_kind":"device","band":"c_band","wavelength_nm":null,"length_mm":null,"integration":"polymer_backfill","waveguide_platform":"soi_rib","vpi_convention":"resonance_tuning_derived","vpil_best":0.333,"vpil_source":"reported_dc","vpil_q":"approx","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/taghavi2026.yaml","notes":"Numbers from arXiv v1 (2602.20406v1, 16 pages, 23 Feb 2026); journal version (Optica 13(7) 1368, issued 2026-07-15, print 2026-07-20) not read. Coupling loss is reported separately for the PIC (average about 12 dB per photonic-wire-bond ch…"},{"device_id":"taghavi2026-b","paper_id":"taghavi2026","year":2026,"platform":"Other","eo_material":"ferroelectric_nematic_lc","device_class":"ring","row_kind":"device","band":"c_band","wavelength_nm":null,"length_mm":null,"integration":"polymer_backfill","waveguide_platform":"soi_rib","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/taghavi2026.yaml","notes":"Fast Pockels response of the same ring as taghavi2026-a: f-6dB about 7.8 GHz, about 30 dB below the slow-response plateau in S21 (reference = fast-response plateau, not DC); AC drive 2.83 Vpp in the S21 measurement; Edyn about 1.65 fJ/bit…"},{"device_id":"taki2024-a","paper_id":"taki2024","year":2023,"platform":"Other","eo_material":"other","device_class":"phase_shifter","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":4.5,"integration":"monolithic","waveguide_platform":"sin","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/taki2024.yaml","notes":"No Vpi: the metric is a non-volatile effective-index change, Delta n_eff about -1.5e-4 retained at 0 V after the first 210 V (Fig. 3(c)); it is negative for either field direction, absent from 0 to 120 V on the pristine device and only occ…"},{"device_id":"tan2024-a","paper_id":"tan2024","year":2023,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"ring","row_kind":"device","band":"l_band","wavelength_nm":1566,"length_mm":0.8,"integration":"micro_transfer_printed","waveguide_platform":"lnoi_loaded_si","vpi_convention":"per_arm_phase_shifter","vpil_best":7,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":16,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":45,"max_line_rate_gbps":45,"max_net_rate_gbps":null,"modulation_format":"NRZ-OOK, PRBS7, 32-45 Gbit/s eyes","length_q":"","evidence_ref":"data/evidence/tan2024.yaml","notes":"Resonant device: no Vpi voltage; vpil is the simulated phase-shifter VpiL (per hybrid waveguide, E field in the same direction in both straights). Tuning 3.89 pm/V measured at about 1566 nm vs 3.81 pm/V simulated at 1550 nm. Ring: straight…"},{"device_id":"tanaka2026-a","paper_id":"tanaka2026","year":2026,"platform":"InP","eo_material":"inp_mqw","device_class":"iq_mzm","row_kind":"device","band":"","wavelength_nm":null,"length_mm":2,"integration":"wafer_bonded_iii_v","waveguide_platform":"inp","vpi_convention":"mzm_differential","vpil_best":0.43,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/tanaka2026.yaml","notes":"IQ modulator of four RF sections (I-LSB, I-MSB, Q-LSB, Q-MSB; two segments per quadrature for optical DAC), InP MQW (QCSE) bonded on SOI by chip-on-wafer bonding, capacitively loaded electrodes with filling factor (FF) setting the impedanc…"},{"device_id":"tanaka2026-b","paper_id":"tanaka2026","year":2026,"platform":"InP","eo_material":"inp_mqw","device_class":"iq_mzm","row_kind":"device","band":"","wavelength_nm":null,"length_mm":1,"integration":"wafer_bonded_iii_v","waveguide_platform":"inp","vpi_convention":"unspecified","vpil_best":0.54,"vpil_source":"derived_dc","vpil_q":"","bw3db_ghz":60,"bw_q":"approx","bw_method":"unspecified","max_baud_gbd":64,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"16QAM (optical DAC: QPSK on MSB and LSB segments) at 64 GBd","length_q":"","evidence_ref":"data/evidence/tanaka2026.yaml","notes":"EO response (Fig. 6a) of all four RF sections (I-LSB, I-MSB, Q-LSB, Q-MSB) measured at a bias where Vpi is 5.4 V (1.0 mm, FF 80%); about 60 GHz 3 dB bandwidth (abstract 'electrical/optical 3-dB bandwidth is approximately 60 GHz'), response…"},{"device_id":"tatarczak2026-a","paper_id":"tatarczak2026","year":2026,"platform":"InP","eo_material":"inp_mqw","device_class":"eam","row_kind":"device","band":"o_band","wavelength_nm":1310,"length_mm":null,"integration":"monolithic","waveguide_platform":"inp","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":100,"bw_q":"approx","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/tatarczak2026.yaml","notes":"Paper says exceeding 100 GHz; trace crosses -3 dB near 100 GHz. Simulated 426 Gb/s eye (ER 4.9 dB, OMA 8.6 dBm) not entered."},{"device_id":"theurer2026-a","paper_id":"theurer2026","year":2026,"platform":"InP","eo_material":"inp_mqw","device_class":"eam","row_kind":"device","band":"o_band","wavelength_nm":null,"length_mm":0.08,"integration":"monolithic","waveguide_platform":"inp","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":65,"bw_q":"approx","bw_method":"eo_s21","max_baud_gbd":145,"max_line_rate_gbps":290,"max_net_rate_gbps":null,"modulation_format":"BtB PAM4 145 GBd (290 Gb/s) BER below 3.8e-3 on all four channels at 10 dBm Rx power; 140 GBd over up to 11 km SSMF; 14…","length_q":"","evidence_ref":"data/evidence/theurer2026.yaml","notes":"Bandwidth density 770 Gb/s/mm at 375 um pitch. Ex-facet power over 24 mW (SOA 80 mA), about 10 dBm modulated. Crosstalk below -32.2 dB (noise limited), -40.9 dB above noise floor. EAM bias -2 V (CW), -1.9 V (PAM4, 50 C)."},{"device_id":"thiele2022-a","paper_id":"thiele2022","year":2022,"platform":"Bulk Ti:LN","eo_material":"lithium_niobate","device_class":"phase_shifter","row_kind":"device","band":"","wavelength_nm":null,"length_mm":12,"integration":"monolithic","waveguide_platform":"other","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/thiele2022.yaml","notes":"Senarmont read-out of the TE/TM phase difference (two polarisations), z-cut with top electrode and adjacent ground (p.6-8). V_pi/2 (min-to-max swing of the Senarmont output, not a Vpi; Vpi columns left empty): 23.3 V at 296 K (Table 3 p.14…"},{"device_id":"thiele2022-b","paper_id":"thiele2022","year":2022,"platform":"Bulk Ti:LN","eo_material":"lithium_niobate","device_class":"phase_shifter","row_kind":"device","band":"","wavelength_nm":null,"length_mm":12,"integration":"monolithic","waveguide_platform":"other","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/thiele2022.yaml","notes":"Senarmont read-out of the TE/TM phase difference (two polarisations), z-cut with top electrode and adjacent ground (p.6-8). V_pi/2 (min-to-max swing of the Senarmont output, not a Vpi; Vpi columns left empty): 40 V at 8.5 K (Table 3 p.14),…"},{"device_id":"thiele2022-c","paper_id":"thiele2022","year":2022,"platform":"Bulk Ti:LN","eo_material":"lithium_niobate","device_class":"other","row_kind":"device","band":"","wavelength_nm":null,"length_mm":12,"integration":"monolithic","waveguide_platform":"other","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/thiele2022.yaml","notes":"Coupling parameter V_pi/2 (Phi = pi/2 for full cross-state transfer) is a switching voltage, not a Vpi; Vpi columns left empty. Bar-state wavelength left empty because the sources conflict: Table 3 (p.14) lists 1460 nm at 296 K and 1545 nm…"},{"device_id":"thiele2022-d","paper_id":"thiele2022","year":2022,"platform":"Bulk Ti:LN","eo_material":"lithium_niobate","device_class":"other","row_kind":"device","band":"","wavelength_nm":null,"length_mm":12,"integration":"monolithic","waveguide_platform":"other","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/thiele2022.yaml","notes":"Coupling parameter V_pi/2 (Phi = pi/2 for full cross-state transfer) is a switching voltage, not a Vpi; Vpi columns left empty. Bar-state wavelength left empty because the sources conflict: Table 3 (p.14) lists 1460 nm at 296 K and 1545 nm…"},{"device_id":"thiele2022-e","paper_id":"thiele2022","year":2022,"platform":"Bulk Ti:LN","eo_material":"lithium_niobate","device_class":"other","row_kind":"device","band":"s_band","wavelength_nm":1472,"length_mm":15,"integration":"monolithic","waveguide_platform":"other","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/thiele2022.yaml","notes":"V_pi/2 11.1 V at the 1472 nm phase-matched wavelength (Table 3 p.14, Fig. 5b p.12), V_pi/2/(lambda L) 5 V/(um cm); r24 conversion, periodic poling period 19.9 um, waveguide 6 um Ti width, 22 mm chip, electrodes placed symmetrically next to…"},{"device_id":"thiele2022-f","paper_id":"thiele2022","year":2022,"platform":"Bulk Ti:LN","eo_material":"lithium_niobate","device_class":"other","row_kind":"device","band":"l_band","wavelength_nm":1584,"length_mm":15,"integration":"monolithic","waveguide_platform":"other","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/thiele2022.yaml","notes":"V_pi/2 16.1 V at the 1584 nm phase-matched wavelength (Table 3 p.14, Fig. 5c p.12-13), V_pi/2/(lambda L) 6.73 V/(um cm), a 35 percent increase after normalisation; phase-matched wavelength shift 112 nm on cooling from 295 K to 5 K for the…"},{"device_id":"tiberi2025-a","paper_id":"tiberi2025","year":2025,"platform":"Graphene/2D","eo_material":"graphene_2d","device_class":"eam","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":0.04,"integration":"transferred_2d","waveguide_platform":"soi_strip","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":67,"bw_q":"approx","bw_method":"eo_s21","max_baud_gbd":80,"max_line_rate_gbps":80,"max_net_rate_gbps":null,"modulation_format":"NRZ","length_q":"","evidence_ref":"data/evidence/tiberi2025.yaml","notes":"Numbers from arXiv v1 (2506.03281v1, 21 pages, 3 Jun 2025); no DOI or journal version found. Static optical transmission measured on grating-coupler test structures (about 6 dB per coupler, extracted from reference waveguides; p.11) with 1…"},{"device_id":"tiberi2025-b","paper_id":"tiberi2025","year":2025,"platform":"Graphene/2D","eo_material":"graphene_2d","device_class":"eam","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":0.02,"integration":"transferred_2d","waveguide_platform":"soi_strip","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":17,"bw_q":"","bw_method":"unspecified","max_baud_gbd":20,"max_line_rate_gbps":20,"max_net_rate_gbps":null,"modulation_format":"NRZ","length_q":"","evidence_ref":"data/evidence/tiberi2025.yaml","notes":"Numbers from arXiv v1 (2506.03281v1, 21 pages, 3 Jun 2025); no DOI or journal version found. Static optical transmission measured on grating-coupler test structures (about 6 dB per coupler, extracted from reference waveguides; p.11) with 1…"},{"device_id":"tiberi2025-c","paper_id":"tiberi2025","year":2025,"platform":"Graphene/2D","eo_material":"graphene_2d","device_class":"eam","row_kind":"device","band":"o_band","wavelength_nm":null,"length_mm":0.04,"integration":"transferred_2d","waveguide_platform":"soi_strip","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":40,"max_line_rate_gbps":40,"max_net_rate_gbps":null,"modulation_format":"NRZ","length_q":"","evidence_ref":"data/evidence/tiberi2025.yaml","notes":"Numbers from arXiv v1 (2506.03281v1, 21 pages, 3 Jun 2025); no DOI or journal version found. Static optical transmission measured on grating-coupler test structures (about 6 dB per coupler, extracted from reference waveguides; p.11) with 1…"},{"device_id":"tiberi2026-c","paper_id":"tiberi2026","year":2026,"platform":"Graphene/2D","eo_material":"graphene_2d","device_class":"eam","row_kind":"device","band":"o_band","wavelength_nm":1310,"length_mm":0.04,"integration":"transferred_2d","waveguide_platform":"soi_rib","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"NRZ 2^7-1 PRBS, 40 Gb/s demo as tiberi2025-c; BER 4.4e-2, eye ER 0.81 dB (Table 1)","length_q":"","evidence_ref":"data/evidence/tiberi2026.yaml","notes":"Likely same 40 um device and eye as tiberi2025-c; new: static ER about 2 dB at 1310 nm, bias about -6 V, Table 1 BER."},{"device_id":"tiberi2026-d","paper_id":"tiberi2026","year":2026,"platform":"Graphene/2D","eo_material":"graphene_2d","device_class":"eam","row_kind":"device","band":"o_band","wavelength_nm":null,"length_mm":0.1,"integration":"transferred_2d","waveguide_platform":"soi_rib","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":40,"max_line_rate_gbps":40,"max_net_rate_gbps":null,"modulation_format":"NRZ 2^7-1 PRBS at 40 Gb/s; BER 4.1e-2","length_q":"","evidence_ref":"data/evidence/tiberi2026.yaml","notes":"Eye ER 0.81 dB at 40 Gb/s (Table 1). No static or S21 data for this length; wavelength not stated."},{"device_id":"tobing2026-a","paper_id":"tobing2026","year":2026,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"cl_band","wavelength_nm":null,"length_mm":7,"integration":"bonded_heterogeneous","waveguide_platform":"lnoi_rib","vpi_convention":"unspecified","vpil_best":2.9,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":20,"bw_q":"approx","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/tobing2026.yaml","notes":"MZI passives in SiN, only straight TFLN waveguide modulates; 7 mm is arm length. Vpi 4.14 V is the Fig. 4(e) label; VpiL 2.9 V cm stated. Unbalanced-arm TFLN MZI (Fig. 4(d), wavelength sweep) shows fringe extinction up to ~40 dB; not state…"},{"device_id":"tran2026-a","paper_id":"tran2026","year":2026,"platform":"InP","eo_material":"inp_mqw","device_class":"mzm","row_kind":"device","band":"o_band","wavelength_nm":1310,"length_mm":null,"integration":"monolithic","waveguide_platform":"inp","vpi_convention":"unspecified","vpil_best":0.62,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":76,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":180,"max_line_rate_gbps":360,"max_net_rate_gbps":null,"modulation_format":"PAM4, 150-200 GBd measured; BER below 20% HD-FEC (1.4e-2) at 180 GBd, 0.4 Vppd driver input","length_q":"","evidence_ref":"data/evidence/tran2026.yaml","notes":"Single device: HHI InP p-i-n MZM (traveling-wave electrode, on-chip 85 ohm termination, spot size converters) co-packaged with the driver. Vpi 3.1 V in text and conclusion; the Fig. 1 center label reads Vp=3.4 V (kept out of the column). L…"},{"device_id":"ulrich2025-mzi","paper_id":"ulrich2025","year":2025,"platform":"Other","eo_material":"strontium_titanate","device_class":"mzm","row_kind":"device","band":"s_band","wavelength_nm":1470,"length_mm":15.37,"integration":"bonded_heterogeneous","waveguide_platform":"other","vpi_convention":"mzm_single_arm","vpil_best":1.04,"vpil_source":"reported_dc","vpil_q":"approx","bw3db_ghz":0.001,"bw_q":"gt","bw_method":"indirect","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"approx","evidence_ref":"data/evidence/ulrich2025.yaml","notes":"Quasi-static ferroelectric operation: Vpi*L is the author-computed value for the effective Pockels coefficient r_eff 345 +/- 30 pm/V (4 K, remanent zero-field point after poling; r_eff 140 +/- 30 pm/V at 1.6 V/um) and depends on bias histo…"},{"device_id":"ummethala2021-a","paper_id":"ummethala2021","year":2020,"platform":"Polymer","eo_material":"eo_polymer","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":1,"integration":"polymer_backfill","waveguide_platform":"soi_slot","vpi_convention":"mzm_push_pull","vpil_best":0.13,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":76,"bw_q":"approx","bw_method":"eo_s21","max_baud_gbd":100,"max_line_rate_gbps":200,"max_net_rate_gbps":null,"modulation_format":"OOK (64 and 100 GBd); PAM4 (64 and 100 GBd)","length_q":"","evidence_ref":"data/evidence/ummethala2021.yaml","notes":"Single device characterized; the paper does not explicitly restate that the Sec. 4 data chip is the Fig. 2 chip (tag device_identity_unresolved), so system results sit on this row. Bandwidth: 3 dB on detected RF power (phase-modulation ind…"},{"device_id":"valdez2022-a","paper_id":"valdez2022","year":2022,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":5,"integration":"bonded_heterogeneous","waveguide_platform":"lnoi_loaded_si","vpi_convention":"mzm_push_pull","vpil_best":3.1,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":110,"bw_q":"","bw_method":"sideband","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/valdez2022.yaml","notes":"Hybrid mode: 2% of power in Si, 84% in LN (Fig. 1(d)); TE, x-cut, unetched LN. VpiL 3.1 V*cm is the average over 0.1-10 MHz of a trapezoid-overdrive measurement (Fig. 4(b), about 3.0-3.15 V*cm); wavelength of that measurement not stated; i…"},{"device_id":"valdez2023-cn1","paper_id":"valdez2023","year":2022,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":10,"integration":"bonded_heterogeneous","waveguide_platform":"lnoi_loaded_si","vpi_convention":"mzm_push_pull","vpil_best":3.11,"vpil_source":"derived_dc","vpil_q":"","bw3db_ghz":69,"bw_q":"approx","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/valdez2023.yaml","notes":"1.0 cm electrode. Vpi from a 1 kHz cosine-squared fit (Fig. 7); no DC bias used (wavelength tuned to quadrature on an asymmetric MZM). Push-pull stated for the VpiL equation (Eq. 2, p.10). Wavelength is the nominal band (1550/1310 nm); act…"},{"device_id":"valdez2023-cn2","paper_id":"valdez2023","year":2022,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":5.4,"integration":"bonded_heterogeneous","waveguide_platform":"lnoi_loaded_si","vpi_convention":"mzm_push_pull","vpil_best":3.1212000000000004,"vpil_source":"derived_dc","vpil_q":"","bw3db_ghz":109,"bw_q":"approx","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/valdez2023.yaml","notes":"0.54 cm electrode. Vpi from a 1 kHz cosine-squared fit (Fig. 7); no DC bias used (wavelength tuned to quadrature on an asymmetric MZM). Push-pull stated for the VpiL equation (Eq. 2, p.10). Wavelength is the nominal band (1550/1310 nm); ac…"},{"device_id":"valdez2023-cw1","paper_id":"valdez2023","year":2022,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":10,"integration":"bonded_heterogeneous","waveguide_platform":"lnoi_loaded_si","vpi_convention":"mzm_push_pull","vpil_best":2.93,"vpil_source":"derived_dc","vpil_q":"","bw3db_ghz":54,"bw_q":"approx","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/valdez2023.yaml","notes":"1.0 cm electrode. Vpi from a 1 kHz cosine-squared fit (Fig. 7); no DC bias used (wavelength tuned to quadrature on an asymmetric MZM). Push-pull stated for the VpiL equation (Eq. 2, p.10). Wavelength is the nominal band (1550/1310 nm); act…"},{"device_id":"valdez2023-cw2","paper_id":"valdez2023","year":2022,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":5.4,"integration":"bonded_heterogeneous","waveguide_platform":"lnoi_loaded_si","vpi_convention":"mzm_push_pull","vpil_best":3.0186,"vpil_source":"derived_dc","vpil_q":"","bw3db_ghz":79,"bw_q":"approx","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/valdez2023.yaml","notes":"0.54 cm electrode. Vpi from a 1 kHz cosine-squared fit (Fig. 7); no DC bias used (wavelength tuned to quadrature on an asymmetric MZM). Push-pull stated for the VpiL equation (Eq. 2, p.10). Wavelength is the nominal band (1550/1310 nm); ac…"},{"device_id":"valdez2023-on1","paper_id":"valdez2023","year":2022,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"o_band","wavelength_nm":1310,"length_mm":10,"integration":"bonded_heterogeneous","waveguide_platform":"lnoi_loaded_si","vpi_convention":"mzm_push_pull","vpil_best":2.6,"vpil_source":"derived_dc","vpil_q":"","bw3db_ghz":66,"bw_q":"approx","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/valdez2023.yaml","notes":"1.0 cm electrode. Vpi from a 1 kHz cosine-squared fit (Fig. 7); no DC bias used (wavelength tuned to quadrature on an asymmetric MZM). Push-pull stated for the VpiL equation (Eq. 2, p.10). Wavelength is the nominal band (1550/1310 nm); act…"},{"device_id":"valdez2023-on2","paper_id":"valdez2023","year":2022,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"o_band","wavelength_nm":1310,"length_mm":5.4,"integration":"bonded_heterogeneous","waveguide_platform":"lnoi_loaded_si","vpi_convention":"mzm_push_pull","vpil_best":2.3598000000000003,"vpil_source":"derived_dc","vpil_q":"","bw3db_ghz":102,"bw_q":"approx","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/valdez2023.yaml","notes":"0.54 cm electrode. Vpi from a 1 kHz cosine-squared fit (Fig. 7); no DC bias used (wavelength tuned to quadrature on an asymmetric MZM). Push-pull stated for the VpiL equation (Eq. 2, p.10). Wavelength is the nominal band (1550/1310 nm); ac…"},{"device_id":"valdez2023-ow1","paper_id":"valdez2023","year":2022,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"o_band","wavelength_nm":1310,"length_mm":5.4,"integration":"bonded_heterogeneous","waveguide_platform":"lnoi_loaded_si","vpi_convention":"mzm_push_pull","vpil_best":2.0412,"vpil_source":"derived_dc","vpil_q":"","bw3db_ghz":94,"bw_q":"approx","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/valdez2023.yaml","notes":"0.54 cm electrode. Vpi from a 1 kHz cosine-squared fit (Fig. 7); no DC bias used (wavelength tuned to quadrature on an asymmetric MZM). Push-pull stated for the VpiL equation (Eq. 2, p.10). Wavelength is the nominal band (1550/1310 nm); ac…"},{"device_id":"valdez2023-ow2","paper_id":"valdez2023","year":2022,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"o_band","wavelength_nm":1310,"length_mm":10,"integration":"bonded_heterogeneous","waveguide_platform":"lnoi_loaded_si","vpi_convention":"mzm_push_pull","vpil_best":2.01,"vpil_source":"derived_dc","vpil_q":"","bw3db_ghz":54,"bw_q":"approx","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/valdez2023.yaml","notes":"1.0 cm electrode. Vpi from a 1 kHz cosine-squared fit (Fig. 7); no DC bias used (wavelength tuned to quadrature on an asymmetric MZM). Push-pull stated for the VpiL equation (Eq. 2, p.10). Wavelength is the nominal band (1550/1310 nm); act…"},{"device_id":"valdez2023a-a","paper_id":"valdez2023a","year":2022,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"nir_below_o","wavelength_nm":784,"length_mm":4,"integration":"bonded_heterogeneous","waveguide_platform":"lnoi_loaded_sin","vpi_convention":"mzm_push_pull","vpil_best":0.8,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":100,"bw_q":"gt","bw_method":"sideband","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/valdez2023a.yaml","notes":"Vpi 2.0 V and 1.0 V (p.4; conclusion rounds to 2 V and 1 V). EOR normalised to 1 GHz; the trace first reaches -3 dB at the last point (about 110 GHz, Fig. 4(b)) and the text states beyond 100 GHz, so 100 is entered as a bound with measurem…"},{"device_id":"valdez2023a-b","paper_id":"valdez2023a","year":2022,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"nir_below_o","wavelength_nm":784,"length_mm":8,"integration":"bonded_heterogeneous","waveguide_platform":"lnoi_loaded_sin","vpi_convention":"mzm_push_pull","vpil_best":0.8,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":100,"bw_q":"approx","bw_method":"sideband","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/valdez2023a.yaml","notes":"Headline device; 100 GHz/V bandwidth-to-Vpi ratio. EOR normalised to 1 GHz; the trace scatters around -3 dB from about 80 to 105 GHz and ends near -4 dB at 110 GHz (Fig. 4(d)); the text takes the roll-off as above 100 GHz, so 100 is entere…"},{"device_id":"valdez2026-a","paper_id":"valdez2026","year":2026,"platform":"TFLT","eo_material":"lithium_tantalate","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":2,"integration":"bonded_heterogeneous","waveguide_platform":"ltoi_loaded_sin","vpi_convention":"mzm_push_pull","vpil_best":1.36,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":50,"bw_q":"gt","bw_method":"sideband","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/valdez2026.yaml","notes":"Coupling-coefficient modulator; Vpi from 20 Vpp 1 MHz sine scan. Intro says Vpi 6.8 V. Round-trip loss 1.0 dB; LT confinement about 53 percent. Authors state over 50 GHz; isolated 46 GHz point at about -3.2 dB, fit about -1.8 dB at 50 GHz.…"},{"device_id":"valdez2026-b","paper_id":"valdez2026","year":2026,"platform":"TFLT","eo_material":"lithium_tantalate","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":2,"integration":"bonded_heterogeneous","waveguide_platform":"ltoi_loaded_sin","vpi_convention":"mzm_push_pull","vpil_best":4.2,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/valdez2026.yaml","notes":"Comparison MZM next to the RAMZM. Vpi from cosine-squared fit of a 1 MHz scan. Paper says 3 dB bandwidth over 50 GHz for both devices, but Fig. 2(c) data reach -3 dB near 25 GHz (fit about -3.1 dB at 50 GHz); contradiction, no value entere…"},{"device_id":"vanackere2023-a","paper_id":"vanackere2023","year":2023,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":2,"integration":"micro_transfer_printed","waveguide_platform":"lnoi_loaded_sin","vpi_convention":"mzm_push_pull","vpil_best":2.96,"vpil_source":"derived_dc","vpil_q":"","bw3db_ghz":50,"bw_q":"gt","bw_method":"eo_s21","max_baud_gbd":70,"max_line_rate_gbps":70,"max_net_rate_gbps":null,"modulation_format":"NRZ (raised cosine), 56 and 70 Gb/s eyes, BER below KP4-FEC after equalization of the electrical drive chain","length_q":"","evidence_ref":"data/evidence/vanackere2023.yaml","notes":"First micro-transfer-printed LN modulator on SiN. Vpi 14.8 V x 0.2 cm = 2.96 V cm, close to the authors' simulated 3.0 V cm for the push-pull MZM (6.0 V cm per phase section, COMSOL, p.3); the simulated values are not entered and vpil is l…"},{"device_id":"wang2018-mzi","paper_id":"wang2018","year":2017,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"","wavelength_nm":null,"length_mm":2,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"mzm_push_pull","vpil_best":1.8,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":15,"bw_q":"approx","bw_method":"eo_s21","max_baud_gbd":22,"max_line_rate_gbps":22,"max_net_rate_gbps":null,"modulation_format":"NRZ OOK, 2^7-1 PRBS; eye diagrams at 5, 12.5 and 22 Gb/s","length_q":"","evidence_ref":"data/evidence/wang2018.yaml","notes":"Numbers from arXiv v1 (23 Jan 2017); the Optics Express version of record was not read. Etched x-cut LN waveguide (TE, r33) in SiO2 with gold electrodes either side; Vpi is the on-off voltage of the MZI with phase delay in one arm and adva…"},{"device_id":"wang2018-rt-eye","paper_id":"wang2018","year":2017,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"ring","row_kind":"device","band":"","wavelength_nm":null,"length_mm":null,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":40,"max_line_rate_gbps":40,"max_net_rate_gbps":null,"modulation_format":"NRZ OOK, 2^7-1 PRBS; eye diagrams at 22, 30 and 40 Gb/s","length_q":"","evidence_ref":"data/evidence/wang2018.yaml","notes":"Numbers from arXiv v1 (23 Jan 2017); the Optics Express version of record was not read. Separate row because the paper does not say which racetrack (Q) produced the 40 Gb/s eyes, 3 dB ER and 240 fJ/bit; not merged into the Q ~8,000 row. Da…"},{"device_id":"wang2018-rt-q18k","paper_id":"wang2018","year":2017,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"ring","row_kind":"device","band":"","wavelength_nm":null,"length_mm":null,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":11,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/wang2018.yaml","notes":"Numbers from arXiv v1 (23 Jan 2017); the Optics Express version of record was not read. Text-only data point (no curve shown). Cut, cladding, electrode metal and waveguide w/h/s from the p.3 platform statement; electrode gap not entered (Q…"},{"device_id":"wang2018-rt-q50k","paper_id":"wang2018","year":2017,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"ring","row_kind":"device","band":"l_band","wavelength_nm":1576,"length_mm":null,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/wang2018.yaml","notes":"Numbers from arXiv v1 (23 Jan 2017); the Optics Express version of record was not read. Resonance near 1576 nm read from the Fig. 3a wavelength axis. 7.0 pm/V linear shift (Fig. 3b), no change of ER or linewidth. On-chip insertion loss of…"},{"device_id":"wang2018-rt-q5p7k","paper_id":"wang2018","year":2017,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"ring","row_kind":"device","band":"","wavelength_nm":null,"length_mm":null,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":40,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/wang2018.yaml","notes":"Numbers from arXiv v1 (23 Jan 2017); the Optics Express version of record was not read. Text-only data point (no curve shown); confirms lifetime-limited bandwidth. Cut, cladding, electrode metal and waveguide w/h/s from the p.3 platform st…"},{"device_id":"wang2018-rt-q8k","paper_id":"wang2018","year":2017,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"ring","row_kind":"device","band":"","wavelength_nm":null,"length_mm":null,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":30,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/wang2018.yaml","notes":"Numbers from arXiv v1 (23 Jan 2017); the Optics Express version of record was not read. 3 dB EO bandwidth limited by cavity photon lifetime (~6 ps), Fig. 4b; 0 dB reference frequency not stated. Text says 'Q factor' without 'loaded'; Q set…"},{"device_id":"wang2022-a","paper_id":"wang2022","year":2022,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":null,"length_mm":12.5,"integration":"bonded_heterogeneous","waveguide_platform":"lnoi_loaded_si","vpi_convention":"mzm_push_pull","vpil_best":2.13,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":67,"bw_q":"gt","bw_method":"eo_s21","max_baud_gbd":100,"max_line_rate_gbps":168,"max_net_rate_gbps":null,"modulation_format":"OOK 56 and 100 Gbit/s, PAM4 112 Gbit/s, PAM8 168 Gbit/s (56 GBd) eyes; B2B BER of 64 and 100 Gbit/s OOK below the KP-4…","length_q":"","evidence_ref":"data/evidence/wang2022.yaml","notes":"Single intensity MZM; numbers from the ACS Photonics version of record and its Supporting Information. Vpi 1.7 V from Fig. 3(c) (100 kHz triangular drive; wavelength not stated, the paper says C-band); VpiL 2.13 V cm is the authors' 1.7 V…"},{"device_id":"wang2022-b","paper_id":"wang2022","year":2022,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"iq_mzm","row_kind":"device","band":"","wavelength_nm":null,"length_mm":7.5,"integration":"bonded_heterogeneous","waveguide_platform":"lnoi_loaded_si","vpi_convention":"unspecified","vpil_best":2.25,"vpil_source":"derived_dc","vpil_q":"","bw3db_ghz":70,"bw_q":"gt","bw_method":"unspecified","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"DP-16QAM 96 GBd (main text; supplement states 90 GBd), SNR 15.5 dB (X-pol) and 14.7 dB (Y-pol), BER better than 1e-3 in…","length_q":"","evidence_ref":"data/evidence/wang2022.yaml","notes":"Dual-polarization IQ modulator with four hybrid MZIs (7.5 mm arms), two 2D grating couplers, on-chip 50 ohm terminations and heaters; footprint 9 mm x 1.6 mm (Fig. 6). Vpi 3 V and a bandwidth of >70 GHz are given in one sentence (p.5) with…"},{"device_id":"wang2022a-a","paper_id":"wang2022a","year":2022,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"iq_mzm","row_kind":"device","band":"","wavelength_nm":null,"length_mm":12,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"mzm_push_pull","vpil_best":2.6,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":136,"max_line_rate_gbps":null,"max_net_rate_gbps":1600,"modulation_format":"DP-PS-256QAM, entropy about 7.0 bit/symbol","length_q":"","evidence_ref":"data/evidence/wang2022a.yaml","notes":"arXiv v1 numbers. X, Y polarization IQ chips with PRC; XI/XQ/YI/YQ MZMs share the 1.2 cm GSGSG line; 38 ohm termination. Polarization ER above 33 dB at 1550 nm. S11 below -14 dB; S11/S21 include RF probes. Fig. 3(c) 3 dB point not stated (…"},{"device_id":"wang2024a-a","paper_id":"wang2024a","year":2024,"platform":"TFLT","eo_material":"lithium_tantalate","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":6,"integration":"monolithic","waveguide_platform":"ltoi_rib","vpi_convention":"mzm_push_pull","vpil_best":2.8,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":110,"bw_q":"approx","bw_method":"eo_s21","max_baud_gbd":208,"max_line_rate_gbps":528,"max_net_rate_gbps":405,"modulation_format":"IMDD back-to-back PAM2/PAM4/PAM8, 144-208 GBd; 176 GBd PAM8 (BER 3.8e-2, below 25% SD-FEC); 200 GBd PAM4 and 208 GBd PA…","length_q":"","evidence_ref":"data/evidence/wang2024a.yaml","notes":"First TFLT MZM. Fig. 1(c) RF loss alpha 0.58 (Ag) vs 0.77 (Au; figure label 0.7) dB/cm/GHz^0.5 on test CPWs, 67 GHz. Coupling loss about 7 dB per facet; no on-chip or fiber-to-fiber IL, no ER stated. Bias drift after 60 min: about 3 dB (Si…"},{"device_id":"wang2024b-a","paper_id":"wang2024b","year":2024,"platform":"TFLT","eo_material":"lithium_tantalate","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":2.5,"integration":"monolithic","waveguide_platform":"ltoi_rib","vpi_convention":"mzm_push_pull","vpil_best":1.9,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":40,"bw_q":"gt","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/wang2024b.yaml","notes":"Paper's bound stored (convention c): more than 40 GHz (p.5; abstract: up to 40 GHz). Fig. 3(f) trace touches -3 dB near 33-35 GHz, recovers to about -1.7 dB near 37 GHz, crosses near 41 GHz, below -3 dB from about 43 GHz (approx. reading).…"},{"device_id":"wang2024b-b","paper_id":"wang2024b","year":2024,"platform":"TFLT","eo_material":"lithium_tantalate","device_class":"mzm","row_kind":"device","band":"o_band","wavelength_nm":1310,"length_mm":2.5,"integration":"monolithic","waveguide_platform":"ltoi_rib","vpi_convention":"mzm_push_pull","vpil_best":1.6,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/wang2024b.yaml","notes":"Same chip as wang2024b-a, measured at 1310 nm with the broadband adiabatic Y-splitter. Bandwidth shown only at 1550 nm. ER 15 dB quoted in Methods without wavelength; not entered. Waveguide sidewall to electrode 2.5 um each side (p.5); ele…"},{"device_id":"wang2024b-c","paper_id":"wang2024b","year":2024,"platform":"TFLT","eo_material":"lithium_tantalate","device_class":"ring","row_kind":"device","band":"","wavelength_nm":null,"length_mm":null,"integration":"monolithic","waveguide_platform":"ltoi_rib","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/wang2024b.yaml","notes":"EO tuning 255 MHz/V with a single electrode pair, 510 MHz/V with both phase-shifter sections (Fig. 3(c), 0-40 V). Apex radius 100 um, straight section 400 um. Measured in C and O band; wavelength of Fig. 3(c) not stated. No Q or FSR given…"},{"device_id":"wang2025-a","paper_id":"wang2025","year":2025,"platform":"TFLT","eo_material":"lithium_tantalate","device_class":"mzm","row_kind":"device","band":"","wavelength_nm":null,"length_mm":7,"integration":"monolithic","waveguide_platform":"ltoi_rib","vpi_convention":"mzm_push_pull","vpil_best":3.22,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":55,"bw_q":"approx","bw_method":"eo_s21","max_baud_gbd":100,"max_line_rate_gbps":112,"max_net_rate_gbps":null,"modulation_format":"OOK 80 and 100 Gb/s; PAM-4 80 Gb/s (40 GBd) and 112 Gb/s (56 GBd); eye diagrams at 0 and 35 dBm fiber input; 80 Gb/s OO…","length_q":"","evidence_ref":"data/evidence/wang2025.yaml","notes":"Results identical at 0 and 35 dBm fiber input (-7 and 28 dBm in the modulator; 7 dB loss = 6 dB grating coupler + 1 dB front end). 28 dBm limited by the source, not damage. Z0 from Fig. 3(h) oscillates about 47-60 ohm; EE S21 roll-off 5.7…"},{"device_id":"wang2026a-a","paper_id":"wang2026a","year":2026,"platform":"SiPh","eo_material":"silicon_plasma_dispersion","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":null,"length_mm":2.25,"integration":"foundry_native","waveguide_platform":"soi_rib","vpi_convention":"unspecified","vpil_best":2.3,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":81.8,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":100,"max_line_rate_gbps":300,"max_net_rate_gbps":null,"modulation_format":"PAM-8 eye diagram at 100 GBd (no BER reported)","length_q":"","evidence_ref":"data/evidence/wang2026a.yaml","notes":"Total MZM length 2.5 mm, effective modulation length 2.25 mm (length_mm). VpiL 2.3 V cm extracted from phase shift versus bias in transmission spectra; Vpi approx 10.2 V is the authors' value for DC from VpiL and length. Fig. 1(d): -3 dB c…"},{"device_id":"wang2026a-b","paper_id":"wang2026a","year":2026,"platform":"SiPh","eo_material":"silicon_plasma_dispersion","device_class":"mzm","row_kind":"device","band":"o_band","wavelength_nm":null,"length_mm":null,"integration":"foundry_native","waveguide_platform":"soi_rib","vpi_convention":"unspecified","vpil_best":1.36,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":59.5,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":112,"max_line_rate_gbps":336,"max_net_rate_gbps":null,"modulation_format":"PAM-4 at 100 GBd (SER 4.8e-4, ER 4.2 dB, TDECQ 2.6 dB); PAM-8 eye diagrams at 100 and 112 GBd (eyes only)","length_q":"","evidence_ref":"data/evidence/wang2026a.yaml","notes":"Improved-efficiency device for verification, O-band (spectra near 1305-1313 nm, Fig. 2(a)). VpiL 1.36 V cm from transmission spectra at 0 to 6 V; Vpi approx 6 V is the authors' value. Effective length is not stated for this device (Table I…"},{"device_id":"wang2026b-am","paper_id":"wang2026b","year":2026,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"","wavelength_nm":null,"length_mm":11,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"unspecified","vpil_best":2.4,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":30,"bw_q":"approx","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"approx","evidence_ref":"data/evidence/wang2026b.yaml","notes":"Packaging paper: this row is the modulator unit inside the 2x8 switch. Fig. 2(f) AM (chip-level EO S21, about 30 GHz) is taken to be the same design as AM 3-1 because the RF Vpi extraction combines the DC Vpi with that curve; the paper doe…"},{"device_id":"wang2026b-am2","paper_id":"wang2026b","year":2026,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"","wavelength_nm":null,"length_mm":11,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"unspecified","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":20,"max_line_rate_gbps":20,"max_net_rate_gbps":null,"modulation_format":"OOK at 5, 10, 20 Gbaud on the left first comb sideband","length_q":"approx","evidence_ref":"data/evidence/wang2026b.yaml","notes":"Rate is oscilloscope-limited (demonstrated maximum, entered without a bound qualifier); authors estimate at least 40 Gbaud per channel (assuming 90 percent spectral efficiency, not entered). No Vpi, bandwidth or drive amplitude reported fo…"},{"device_id":"wang2026b-pm","paper_id":"wang2026b","year":2026,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"phase_shifter","row_kind":"device","band":"","wavelength_nm":null,"length_mm":null,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"unspecified","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/wang2026b.yaml","notes":"Comb with PM only: 13 lines, flatness 15 dB; PM plus AM 1 at 24.5 and 9 dBm gives 7 lines with 2.8 dB flatness (Fig. 4(c)). Optical length of the double-pass PM not stated, so length_mm is empty."},{"device_id":"wang2026b-switch","paper_id":"wang2026b","year":2026,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"other","row_kind":"device","band":"","wavelength_nm":null,"length_mm":null,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/wang2026b.yaml","notes":"Circuit-level metrics: optical crosstalk below -20 dB over 1540-1595 nm, rise/fall 33/34 ps limited by a 13 GHz oscilloscope (about 12 ps estimated at package-level bandwidth). No column for switching time or optical crosstalk."},{"device_id":"weckenmann2026-a","paper_id":"weckenmann2026","year":2026,"platform":"SiPh","eo_material":"silicon_plasma_dispersion","device_class":"iq_mzm","row_kind":"device","band":"o_band","wavelength_nm":null,"length_mm":null,"integration":"foundry_native","waveguide_platform":"","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":110,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"Nyquist super-channel (two chips, zero guard band), single polarization, back-to-back: QPSK to 220 GBd total (BER below…","length_q":"","evidence_ref":"data/evidence/weckenmann2026.yaml","notes":"Authors' earlier ring-assisted MZM I/Q design (ref. 11, same group's arXiv 2509.20584); Q 5300, resonance depth 10.7 dB and 6 dB EO bandwidth 54 GHz are quoted from it, not re-measured here, so they are not entered as cells (6 dB bandwidth…"},{"device_id":"weigel2018-a","paper_id":"weigel2018","year":2018,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1560,"length_mm":5,"integration":"bonded_heterogeneous","waveguide_platform":"lnoi_loaded_si","vpi_convention":"mzm_push_pull","vpil_best":6.7,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":106,"bw_q":"gt","bw_method":"sideband","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/weigel2018.yaml","notes":"Numbers from the author manuscript in the cache (single-column manuscript with figures at the end); the Optics Express version of record was not read. One device (test electrodes for push-pull were fabricated on one EOM only, Fig. 1c capti…"},{"device_id":"witmer2020-converter","paper_id":"witmer2020","year":2019,"platform":"Polymer","eo_material":"eo_polymer","device_class":"resonator","row_kind":"device","band":"c_band","wavelength_nm":1558,"length_mm":0.45,"integration":"polymer_backfill","waveguide_platform":"other","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/witmer2020.yaml","notes":"Q and temperature: loaded Q 19,900 and Fano fit at about 7 mK (Fig. 7(a,b)); EO tuning 3.70 pm/V measured at room temperature on the same resonance (Fig. 7(c,d)); temperature_class left empty (mixed). Tuning stable up to 10 MHz (generator…"},{"device_id":"witmer2020-slot","paper_id":"witmer2020","year":2019,"platform":"Polymer","eo_material":"eo_polymer","device_class":"resonator","row_kind":"device","band":"","wavelength_nm":null,"length_mm":null,"integration":"polymer_backfill","waveguide_platform":"soi_slot","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":0.00002,"bw_q":"approx","bw_method":"unspecified","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/witmer2020.yaml","notes":"Test device used to evaluate the slot geometry; total Q about 30,000-60,000 after poling (range, not entered as a single value). Operating wavelength not stated (Fig. 4(d) axis spans 1569.4-1570 nm); band left empty. Slot geometry was not…"},{"device_id":"witmer2020-unslotted","paper_id":"witmer2020","year":2019,"platform":"Polymer","eo_material":"eo_polymer","device_class":"resonator","row_kind":"device","band":"","wavelength_nm":null,"length_mm":null,"integration":"polymer_backfill","waveguide_platform":"other","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/witmer2020.yaml","notes":"Comparison device for Fig. 4(e-h); Fig. 4(h) axis spans 1546.8-1547.4 nm (wavelength not stated in text, not entered). Same family as the converter device, whose 3.70 pm/V is on its own row."},{"device_id":"wolf2018a-gated","paper_id":"wolf2018a","year":2017,"platform":"Polymer","eo_material":"eo_polymer","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":1.1,"integration":"polymer_backfill","waveguide_platform":"soi_slot","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":100,"max_net_rate_gbps":null,"modulation_format":"NRZ OOK (100 Gb/s back-to-back; 80 and 100 Gb/s over 10 km)","length_q":"","evidence_ref":"data/evidence/wolf2018a.yaml","notes":"6 dB EOE convention retained; bw3db blank. Gate field 0.1 V/nm stated for frequency response and linked to the 100 Gb/s transmission experiment on p.7. Initial BER values estimated from Q: 3.2e-4 back-to-back and 3.0e-3 over 10 km at 100 G…"},{"device_id":"wolf2018a-static","paper_id":"wolf2018a","year":2017,"platform":"Polymer","eo_material":"eo_polymer","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":1.1,"integration":"polymer_backfill","waveguide_platform":"soi_slot","vpi_convention":"mzm_push_pull","vpil_best":0.1,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/wolf2018a.yaml","notes":"Static characterization of the transmission-device design; gate condition not stated here. Losses describe this fabrication generation; Ge contamination reported. Phase-only loss is not whole-chip IL. Fiber loss >=20 dB uses available gt q…"},{"device_id":"wolf2018a-ungated","paper_id":"wolf2018a","year":2017,"platform":"Polymer","eo_material":"eo_polymer","device_class":"mzm","row_kind":"device","band":"","wavelength_nm":null,"length_mm":1.1,"integration":"polymer_backfill","waveguide_platform":"soi_slot","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":100,"max_net_rate_gbps":null,"modulation_format":"NRZ OOK (60-80 Gb/s AWG back-to-back; 60-70 Gb/s over 10 km; 100 Gb/s DAC back-to-back)","length_q":"","evidence_ref":"data/evidence/wolf2018a.yaml","notes":"No gate field. Same modulator, alternate drive setup; no separate static metrics duplicated. Directly measured BER 4.2e-3 without post-equalization and 6.6e-6 with it; Q-estimated BER 8.2e-3 and 5.4e-6. DAC experiment does not restate cali…"},{"device_id":"wu2022-a","paper_id":"wu2022","year":2022,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":7,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"mzm_push_pull","vpil_best":2.16,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":50,"bw_q":"gt","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/wu2022.yaml","notes":"Fabricated by PLACE on a commercial x-cut LNOI wafer (NanoLN), MMI splitter and combiner, GSG CPW electrodes with 50 ohm terminal pads, SiON overcladding, LN inverse-taper SSCs. Vpi 3.1 V from a 100 kHz, 20 V peak-to-peak triangle sweep (F…"},{"device_id":"wu2023-a","paper_id":"wu2023","year":2023,"platform":"Graphene/2D","eo_material":"graphene_2d","device_class":"eam","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":0.025,"integration":"foundry_native","waveguide_platform":"soi_rib","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":15.1,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/wu2023.yaml","notes":"Numbers from arXiv v1 preprint (2304.02646v1). Wafer D (optimized: extra CMP planarization, long TMA soak, no contact delay). Table 2/3 entries are mean +- std (IL +-0.4 dB, ER +-0.2 dB, EO BW +-1.8 GHz); text medians at 1550 nm: ER 1.3 dB…"},{"device_id":"wu2023-b","paper_id":"wu2023","year":2023,"platform":"Graphene/2D","eo_material":"graphene_2d","device_class":"eam","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":0.05,"integration":"foundry_native","waveguide_platform":"soi_rib","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":14.1,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/wu2023.yaml","notes":"Numbers from arXiv v1 preprint (2304.02646v1). Wafer D (optimized: extra CMP planarization, long TMA soak, no contact delay). Table 2/3 entries are mean +- std (IL +-0.7 dB, ER +-0.1 dB, EO BW +-1.4 GHz); text medians at 1550 nm: ER 2.5 dB…"},{"device_id":"wu2023-c","paper_id":"wu2023","year":2023,"platform":"Graphene/2D","eo_material":"graphene_2d","device_class":"eam","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":0.075,"integration":"foundry_native","waveguide_platform":"soi_rib","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":12.6,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/wu2023.yaml","notes":"Numbers from arXiv v1 preprint (2304.02646v1). Wafer D (optimized: extra CMP planarization, long TMA soak, no contact delay). Table 2/3 entries are mean +- std (IL +-1.5 dB, ER +-0.3 dB, EO BW +-0.9 GHz); text medians at 1550 nm: ER 3.8 dB…"},{"device_id":"wu2023-d","paper_id":"wu2023","year":2023,"platform":"Graphene/2D","eo_material":"graphene_2d","device_class":"eam","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":0.1,"integration":"foundry_native","waveguide_platform":"soi_rib","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":11.2,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/wu2023.yaml","notes":"Numbers from arXiv v1 preprint (2304.02646v1). Wafer D (optimized: extra CMP planarization, long TMA soak, no contact delay). Table 2/3 entries are mean +- std (IL +-1.7 dB, ER +-0.2 dB, EO BW +-0.7 GHz); text medians at 1550 nm: ER 5.0 dB…"},{"device_id":"wu2025-a","paper_id":"wu2025","year":2025,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":null,"length_mm":6.4,"integration":"bonded_heterogeneous","waveguide_platform":"lnoi_rib","vpi_convention":"mzm_push_pull","vpil_best":2.8,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":100,"bw_q":"approx","bw_method":"eo_s21","max_baud_gbd":128,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"OOK 128 GBd (BER below 2.4e-4, KP4-FEC threshold); PAM4 100 GBd (BER below 3.8e-3, HD-FEC); offline resampling and feed…","length_q":"","evidence_ref":"data/evidence/wu2025.yaml","notes":"Numbers from arXiv v1 (see paper notes). 3 dB EO bandwidth is read against 0 dB at the lowest plotted frequency: S21 rises to about +3 dB near 6 GHz (intentional mismatch of the roughly 43 ohm termination, p.7), then rolls off to the -3 dB…"},{"device_id":"xie2024-a","paper_id":"xie2024","year":2024,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"","wavelength_nm":null,"length_mm":null,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"mzm_push_pull","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":67,"bw_q":"gt","bw_method":"unspecified","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/xie2024.yaml","notes":"Vpi 'approximately 3 V' (p.3, Methods p.6); the Vpi frequency, wavelength and MZM length are not stated (entered in the DC field as the quasi-static default; the bias is a DC null bias). The authors call it a push-pull MZM; they do not def…"},{"device_id":"xu2020-a","paper_id":"xu2020","year":2020,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"iq_mzm","row_kind":"device","band":"c_band","wavelength_nm":null,"length_mm":13,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"mzm_push_pull","vpil_best":2.4,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":48,"bw_q":"approx","bw_method":"eo_s21","max_baud_gbd":110,"max_line_rate_gbps":320,"max_net_rate_gbps":null,"modulation_format":"QPSK 60-110 GBd; 16QAM 60 and 80 GBd","length_q":"","evidence_ref":"data/evidence/xu2020.yaml","notes":"Nested IQ chip, single-drive push-pull I and Q MZMs, 15 mm total length, GSG per MZM, ground width 80 um; waveguide width 4 um (single-mode 0.3 dB/cm). Vpi wavelength not stated. Source is arXiv v1; fig labels 3(b)/3(c) differ from the tex…"},{"device_id":"xu2020-b","paper_id":"xu2020","year":2020,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"iq_mzm","row_kind":"device","band":"c_band","wavelength_nm":null,"length_mm":7.5,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"mzm_push_pull","vpil_best":2.3,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":67,"bw_q":"gt","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/xu2020.yaml","notes":"Same chip and cross-section as xu2020-a (nested IQ, ground width 80 um). Per-device ER and data demo not reported for 7.5 mm (ER 24 to 28 dB across >10 devices on the chip). Text cites Fig. 4(a) for this device although the caption names t…"},{"device_id":"xu2022-a","paper_id":"xu2022","year":2022,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"iq_mzm","row_kind":"device","band":"","wavelength_nm":null,"length_mm":23.5,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"mzm_push_pull","vpil_best":2.35,"vpil_source":"derived_dc","vpil_q":"","bw3db_ghz":110,"bw_q":"gt","bw_method":"eo_s21","max_baud_gbd":130,"max_line_rate_gbps":null,"max_net_rate_gbps":1960,"modulation_format":"DP-PCS-400QAM at 130 GBd, entropy 8.14-8.54 bit/symbol/pol; 8.44 bit/symbol/pol: pre-FEC BER 1.91e-2, SNR 23.4 dB, info…","length_q":"","evidence_ref":"data/evidence/xu2022.yaml","notes":"Single row for the four sub-MZMs (XI, XQ, YI, YQ), all stated to give Vpi 1 V and 3 dB EO bandwidth above 110 GHz; the paper gives no per-channel numbers, statistic left empty. More than five DP-IQ modulators on the same chip all show abou…"},{"device_id":"xu2026a-a","paper_id":"xu2026a","year":2026,"platform":"TFLT","eo_material":"lithium_tantalate","device_class":"mzm","row_kind":"device","band":"o_band","wavelength_nm":1310,"length_mm":15,"integration":"monolithic","waveguide_platform":"ltoi_rib","vpi_convention":"mzm_push_pull","vpil_best":1.63,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":110,"bw_q":"gt","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/xu2026a.yaml","notes":"Vpi is the average of the 10 Hz-10 kHz triangular-wave scan (1.045 V at 10 Hz; range 1.045-1.166 V). Simulated VpiL 1.6 V cm and loss 0.01 dB/cm not entered. Authors state 3 dB bandwidth beyond 110 GHz (text, Fig. 4(b) caption); trace touc…"},{"device_id":"xu2026b-a","paper_id":"xu2026b","year":2026,"platform":"TFLT","eo_material":"lithium_tantalate","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":18,"integration":"monolithic","waveguide_platform":"ltoi_rib","vpi_convention":"mzm_push_pull","vpil_best":2.43,"vpil_source":"derived_dc","vpil_q":"","bw3db_ghz":110,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":226,"max_line_rate_gbps":768,"max_net_rate_gbps":536.6,"modulation_format":"226 GBd back-to-back, no linear pre-equalization: PAM4 452 (420) Gb/s BER 2.27e-3; PAM6 584 (494) Gb/s BER 1.72e-2; PAM…","length_q":"","evidence_ref":"data/evidence/xu2026b.yaml","notes":"Vpi is the average over 1 Hz-10 kHz (+-4 percent). Net rates use FEC code rate 0.7436 and NGMI threshold 0.8105; 25 um Si undercut depth. Authors state exceeds 110 GHz (text, Fig. 3(c) label); trace touches -3 dB near 103-104 GHz, ends nea…"},{"device_id":"xue2023-a","paper_id":"xue2023","year":2023,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"visible","wavelength_nm":630,"length_mm":8,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"mzm_push_pull","vpil_best":0.48,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/xue2023.yaml","notes":"Same 8 mm push-pull MZM (300 nm x-cut film, 180 nm etch, 1 um width, WEG 0.8 um, 2.6 um electrode spacing) measured at three laser wavelengths; the paper reports one device and does not give the quasi-static sweep frequency. GSG layout rea…"},{"device_id":"xue2023-b","paper_id":"xue2023","year":2023,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"visible","wavelength_nm":520,"length_mm":8,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"mzm_push_pull","vpil_best":0.25,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/xue2023.yaml","notes":"Same 8 mm push-pull MZM (300 nm x-cut film, 180 nm etch, 1 um width, WEG 0.8 um, 2.6 um electrode spacing) measured at three laser wavelengths; the paper reports one device and does not give the quasi-static sweep frequency. GSG layout rea…"},{"device_id":"xue2023-c","paper_id":"xue2023","year":2023,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"visible","wavelength_nm":450,"length_mm":8,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"mzm_push_pull","vpil_best":0.17,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/xue2023.yaml","notes":"Same 8 mm push-pull MZM (300 nm x-cut film, 180 nm etch, 1 um width, WEG 0.8 um, 2.6 um electrode spacing) measured at three laser wavelengths; the paper reports one device and does not give the quasi-static sweep frequency. GSG layout rea…"},{"device_id":"xue2023-d","paper_id":"xue2023","year":2023,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"","wavelength_nm":null,"length_mm":8,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":20,"bw_q":"gt","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/xue2023.yaml","notes":"Bandwidth row: the paper states neither the laser wavelength nor the bias of the S21 measurement (Fig. 2(e)), so no wavelength or band is entered. Raw 3 dB bandwidth 16 GHz (blue trace) is limited by the Newport 1544-B detector; the >20 GH…"},{"device_id":"xue2026-a","paper_id":"xue2026","year":2026,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":4,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"mzm_push_pull","vpil_best":1.25,"vpil_source":"reported_dc","vpil_q":"approx","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/xue2026.yaml","notes":"Static characterization only (Fig. 3(b)); EO response, RF line, loss and data results are reported for the 7 mm device. Sidewall angle 60 deg stated without its reference, left empty. Fig. 1 symbols W, g, H, S, T, R, C = 50, 5, 5.2, 2, 5,…"},{"device_id":"xue2026-b","paper_id":"xue2026","year":2026,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":7,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"mzm_push_pull","vpil_best":1.25,"vpil_source":"reported_dc","vpil_q":"approx","bw3db_ghz":67,"bw_q":"gt","bw_method":"eo_s21","max_baud_gbd":112,"max_line_rate_gbps":112,"max_net_rate_gbps":null,"modulation_format":"OOK 80 and 112 Gb/s; PAM-4 40 and 50 GBd (80 and 100 Gb/s)","length_q":"","evidence_ref":"data/evidence/xue2026.yaml","notes":"Headline device. EO bandwidth: 3 dB not crossed up to 67 GHz; the 1.3 dB roll-off at 67 GHz follows a rapid 1 dB drop below 2 GHz and a trace described as flat from 2 GHz to 67 GHz (p.7), so the 1.3 dB may be referenced to about 2 GHz rath…"},{"device_id":"yamaguchi2026-a","paper_id":"yamaguchi2026","year":2026,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"","wavelength_nm":null,"length_mm":45,"integration":"monolithic","waveguide_platform":"","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":110,"bw_q":"gt","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"approx","evidence_ref":"data/evidence/yamaguchi2026.yaml","notes":"Device of OFC 2024 M3K.4 as reviewed here. Vpi, wavelength, material cut, electrode metal and signal width not stated; Fig. 1(b) shows 2 um and 5 um labels (gap 5 um stated, 2 um taken to be waveguide width, not entered). 8.2 dB per gratin…"},{"device_id":"yamaguchi2026-b","paper_id":"yamaguchi2026","year":2026,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"","wavelength_nm":null,"length_mm":40.5,"integration":"monolithic","waveguide_platform":"","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":110,"bw_q":"gt","bw_method":"unspecified","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/yamaguchi2026.yaml","notes":"Device of OFC 2025 Th4D.4. Chip trace in Fig. 2(c) ends about -0.5 dB at 110 GHz with minimum about -1.7 dB near 105 GHz; paper's own metric is 1 dB bandwidth 100 GHz. Vpi, IL, ER, geometry, wavelength not given for the chip separately."},{"device_id":"yamaguchi2026-c","paper_id":"yamaguchi2026","year":2026,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"","wavelength_nm":null,"length_mm":null,"integration":"monolithic","waveguide_platform":"","vpi_convention":"unspecified","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":100,"bw_q":"","bw_method":"unspecified","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/yamaguchi2026.yaml","notes":"Packaged ceramic module of the folded device. Vpi and ER 2 V and 40 dB are given for 'the modulator' in Sec. 3; Conclusion attributes 2 V to the packaged module; assigned here, not to the chip row. Authors state module 3 dB bandwidth is li…"},{"device_id":"yang2022-a","paper_id":"yang2022","year":2021,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1549.93,"length_mm":5,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"mzm_push_pull","vpil_best":2.37,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":110,"bw_q":"gt","bw_method":"eo_s21","max_baud_gbd":100,"max_line_rate_gbps":250,"max_net_rate_gbps":null,"modulation_format":"PAM-6; PAM-4","length_q":"","evidence_ref":"data/evidence/yang2022.yaml","notes":"Vpi 4.74 V from a 5 MHz triangular sweep with a 1 GHz photodiode (Fig. 5(a)); the text writes \"VpiL at 5 MHz is 4.74 V for our 5 mm long device\", read as Vpi (the Fig. 5(a) annotation reads \"Vpi=4.74V\", which resolves the text label), VpiL…"},{"device_id":"yang2026-a","paper_id":"yang2026","year":2026,"platform":"SiPh","eo_material":"silicon_plasma_dispersion","device_class":"mzm","row_kind":"device","band":"o_band","wavelength_nm":1310,"length_mm":0.5,"integration":"foundry_native","waveguide_platform":"soi_rib","vpi_convention":"unspecified","vpil_best":0.66,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":94.7,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":150,"max_line_rate_gbps":400,"max_net_rate_gbps":null,"modulation_format":"NRZ eyes at 56 and 112 GBd; PAM-4 eyes at 112 GBd (TDECQ 1.05 dB) and 150 GBd (TDECQ 1.8 dB); PAM-8 eye at 135 GBd; eye…","length_q":"","evidence_ref":"data/evidence/yang2026.yaml","notes":"Median values over wafer-level dies (Fig. 2(b), 2(e)); individual dies about 89.8-100.1 GHz and 1.46-3.71 dB IL. Two active 500 um PhC waveguides (one per arm), two p-n junctions in series (push-pull) on a GSSG differential electrode; foot…"},{"device_id":"yin2026-a","paper_id":"yin2026","year":2026,"platform":"SiPh","eo_material":"silicon_plasma_dispersion","device_class":"ring","row_kind":"device","band":"o_band","wavelength_nm":null,"length_mm":null,"integration":"foundry_native","waveguide_platform":"soi_rib","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":67,"bw_q":"gt","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":256,"max_net_rate_gbps":null,"modulation_format":"NRZ 100 Gb/s (SNR 5.08) and 140 Gb/s (SNR 4.07); PAM4 224 Gb/s (TDECQ 4.09 dB) and 256 Gb/s (TDECQ 4.18 dB, SD-FEC thre…","length_q":"","evidence_ref":"data/evidence/yin2026.yaml","notes":"Headline device. Fig. 2(d): inductor lifts the -9 dB IL response from 40 GHz to full 67 GHz range (over 27 GHz improvement); no 3 dB crossing up to 67 GHz (VNA limit), so bandwidth is a bound. Inductor response peaks about +4 dB near 55 GH…"},{"device_id":"yin2026-b","paper_id":"yin2026","year":2026,"platform":"SiPh","eo_material":"silicon_plasma_dispersion","device_class":"ring","row_kind":"device","band":"o_band","wavelength_nm":null,"length_mm":null,"integration":"foundry_native","waveguide_platform":"soi_rib","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":40,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":100,"max_net_rate_gbps":null,"modulation_format":"NRZ 100 Gb/s eye (SNR 4.53, 6-tap FFE); 140 Gb/s NRZ failed (not shown)","length_q":"","evidence_ref":"data/evidence/yin2026.yaml","notes":"Same ring layout without the spiral inductor (Fig. 2(a)); baseline for the inductive-peaking device. 3 dB EO bandwidth 40 GHz at -9 dB IL read from the text; Fig. 2(d) green trace is consistent. 140 Gb/s NRZ failed without the inductor (te…"},{"device_id":"yin2026-c","paper_id":"yin2026","year":2026,"platform":"SiPh","eo_material":"silicon_plasma_dispersion","device_class":"ring","row_kind":"device","band":"o_band","wavelength_nm":null,"length_mm":null,"integration":"foundry_native","waveguide_platform":"soi_rib","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":62,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/yin2026.yaml","notes":"Bandwidth-only operating point of the no-inductor ring (Fig. 2(c), -6 dB IL trace, 62 GHz stated in text). No eye or data experiment at this point."},{"device_id":"yin2026-d","paper_id":"yin2026","year":2026,"platform":"SiPh","eo_material":"silicon_plasma_dispersion","device_class":"ring","row_kind":"device","band":"o_band","wavelength_nm":null,"length_mm":null,"integration":"foundry_native","waveguide_platform":"soi_rib","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":67,"bw_q":"gt","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/yin2026.yaml","notes":"Bandwidth-only operating point of the no-inductor ring (Fig. 2(c), -3 dB IL trace): over 67 GHz in text; trace stays near -1 dB or above at 67 GHz so no crossing."},{"device_id":"yu2024-s0","paper_id":"yu2024","year":2024,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":4,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"mzm_push_pull","vpil_best":1.98,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/yu2024.yaml","notes":"Untreated as-fabricated device; Vpi 4.95 V, modulation efficiency 1.98 V cm (= 4.95 V x 0.4 cm). Intro states the intrinsic literature Pockels coefficient 32 pm/V. Vpi measured with a 1 MHz voltage sweep at 1550 nm (quasi-static). Single d…"},{"device_id":"yu2024-s1","paper_id":"yu2024","year":2024,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":4,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"mzm_push_pull","vpil_best":1.7,"vpil_source":"derived_dc","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/yu2024.yaml","notes":"After magnetic-field annealing (1 T along z, heated to 733 K at 100 K/min, 30 min); Vpi 4.25 V, which the authors say stays within the simulated range of their earlier design (ref 39); VpiL not stated in the text. Vpi measured with a 1 MHz…"},{"device_id":"yu2024-s2","paper_id":"yu2024","year":2024,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":4,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"mzm_push_pull","vpil_best":0.696,"vpil_source":"derived_dc","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/yu2024.yaml","notes":"After the first rapid anneal (823 K at 500 K/min, 20 min); Vpi 1.74 V, below the simulated value according to the authors; VpiL not stated in the text. Vpi measured with a 1 MHz voltage sweep at 1550 nm (quasi-static). Single device in suc…"},{"device_id":"yu2024-s3","paper_id":"yu2024","year":2024,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":4,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"mzm_push_pull","vpil_best":0.63,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/yu2024.yaml","notes":"After the second rapid anneal ('excited twice'); Vpi 1.57 V, modulation efficiency 0.63 V cm (= 1.57 V x 0.4 cm), the headline claim; authors quote 3.2 times better than untreated and a Pockels coefficient of 101 pm/V (abstract) or 69 pm/V…"},{"device_id":"yu2026-a","paper_id":"yu2026","year":2026,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"o_band","wavelength_nm":1310,"length_mm":null,"integration":"monolithic","waveguide_platform":"","vpi_convention":"unspecified","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":110,"bw_q":"approx","bw_method":"unspecified","max_baud_gbd":210,"max_line_rate_gbps":420,"max_net_rate_gbps":null,"modulation_format":"PAM4 with 23-tap equalizer, target SER 9.7e-3: 185 GBd (370 Gb/s, TDECQ 2.97 dB, sample a), 200 GBd (400 Gb/s, 3.83 dB,…","length_q":"","evidence_ref":"data/evidence/yu2026.yaml","notes":"Modulator characterized only by stated numbers (Vpi < 2 V design value, about 110 GHz bandwidth); Fig. 2-3 S21 are simulations (driver-A TOSA link EO 3 dB about 95 GHz). Wavelength 1310 nm from the DFB. Eyes after DCA equalization, not BER…"},{"device_id":"yue2023-a","paper_id":"yue2023","year":2023,"platform":"SiPh","eo_material":"silicon_plasma_dispersion","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":null,"length_mm":3,"integration":"foundry_native","waveguide_platform":"soi_rib","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":90,"max_line_rate_gbps":90,"max_net_rate_gbps":null,"modulation_format":"OOK, no DSP; open eyes 30 GBd (EF 0), 60 GBd (EF 0.36), 80 GBd (EF 0.61), 90 GBd (EF 0.75)","length_q":"","evidence_ref":"data/evidence/yue2023.yaml","notes":"Version: all values from arXiv 2312.14537v1 (19 pp), no journal DOI; no Crossref record. Dual-drive MZM whose two carrier-depletion phase shifters are set to different bandwidths by bias; the equalization factor EF is the low-speed to high…"},{"device_id":"yue2023-b","paper_id":"yue2023","year":2023,"platform":"SiPh","eo_material":"silicon_plasma_dispersion","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":null,"length_mm":1,"integration":"foundry_native","waveguide_platform":"soi_rib","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":128,"max_line_rate_gbps":128,"max_net_rate_gbps":null,"modulation_format":"OOK, no DSP; EF 0 open eyes up to 100 GBd; EF 0.5 open eyes 90 to 128 GBd","length_q":"","evidence_ref":"data/evidence/yue2023.yaml","notes":"Version: arXiv 2312.14537v1. Improved version of the low-speed DDMZM: 1 mm phase shifters, two 50 ohm on-chip terminators in parallel (25 ohm), traveling-wave electrode size said to equal the low-speed device. EF = 0 reaches 100 GBd; EF =…"},{"device_id":"yue2025-a","paper_id":"yue2025","year":2024,"platform":"SiPh","eo_material":"silicon_plasma_dispersion","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":null,"length_mm":0.9,"integration":"foundry_native","waveguide_platform":"soi_rib","vpi_convention":"unspecified","vpil_best":4.86,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":110,"bw_q":"gt","bw_method":"eo_s21","max_baud_gbd":140,"max_line_rate_gbps":140,"max_net_rate_gbps":null,"modulation_format":"OOK, no DSP, eye diagrams at 100, 110, 120, 130 and 140 GBd; dynamic ER 2.94, 2.77, 2.54, 2.26, 2.08 dB; 5 Vpp drive","length_q":"","evidence_ref":"data/evidence/yue2025.yaml","notes":"Headline TFT device (m=1, forward region equal to main region). Length 0.9 mm is the Table 2 total (three 0.3 mm regions); reverse region cancels DC response. At 6 V reverse bias EO response stays above -1.5 dB to 110 GHz (Fig. 5(b)), roug…"},{"device_id":"yue2025-b","paper_id":"yue2025","year":2024,"platform":"SiPh","eo_material":"silicon_plasma_dispersion","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":null,"length_mm":0.3,"integration":"foundry_native","waveguide_platform":"soi_rib","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":70,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":110,"max_line_rate_gbps":110,"max_net_rate_gbps":null,"modulation_format":"OOK, no DSP, eye diagrams at 100, 110 GBd (dynamic ER 2.36, 2.14 dB); eyes at 120 GBd and above not open (ER N/A)","length_q":"","evidence_ref":"data/evidence/yue2025.yaml","notes":"Conventional reference device without equalization regions. 3 dB bandwidth 70 GHz at 6 V bias is the stated value; Fig. 5(b) purple trace reaches -3 dB near 68 to 70 GHz. At 0 V bias 43.1 GHz. Static ER 35.3 dB; FSR 9.3 nm. Series push-pul…"},{"device_id":"yue2025-c","paper_id":"yue2025","year":2024,"platform":"SiPh","eo_material":"silicon_plasma_dispersion","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":null,"length_mm":0.9,"integration":"foundry_native","waveguide_platform":"soi_rib","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":81.9,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/yue2025.yaml","notes":"Same device as yue2025-a with 0 V bias on all regions; 3 dB bandwidth 81.9 GHz stated for the measured Fig. 5(b) response (p.13), DC-normalized as for the 6 V point. Bias for the Methods IL, ER and loss values is not stated, so those are e…"},{"device_id":"yue2025-d","paper_id":"yue2025","year":2024,"platform":"SiPh","eo_material":"silicon_plasma_dispersion","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":null,"length_mm":0.3,"integration":"foundry_native","waveguide_platform":"soi_rib","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":43.1,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/yue2025.yaml","notes":"Same device as yue2025-b with 0 V bias; 3 dB bandwidth 43.1 GHz stated for the measured Fig. 5(b) response (p.13), DC-normalized as for the 6 V point. Bias for the Methods IL, ER and loss values is not stated, so those are empty."},{"device_id":"zhang2022-a","paper_id":"zhang2022","year":2022,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"l_band","wavelength_nm":null,"length_mm":5.8,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"unspecified","vpil_best":2.3,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":170,"bw_q":"","bw_method":"sideband","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/zhang2022.yaml","notes":"EO response measured to 325 GHz in four bands with large scatter; bandwidth crossings are read on the EO S21 curve calculated from measured s-parameters, which the authors state agrees with the raw sideband data (Fig. 5(c,d)); the raw data…"},{"device_id":"zhang2022-b","paper_id":"zhang2022","year":2022,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"l_band","wavelength_nm":null,"length_mm":10.8,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"unspecified","vpil_best":2.3,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":100,"bw_q":"","bw_method":"sideband","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/zhang2022.yaml","notes":"Same cross-section as zhang2022-a. Lower RF Vpi than the 5.8 mm device across the mmWave band; 7.3 V at 250 GHz is the abstract headline. Low-frequency Vpi*L 2.67 V cm at 1 GHz. Bandwidth crossings are read on the EO S21 curve calculated f…"},{"device_id":"zhang2023-a","paper_id":"zhang2023","year":2023,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"resonator","row_kind":"device","band":"c_band","wavelength_nm":1560,"length_mm":0.15,"integration":"monolithic","waveguide_platform":"lnoi_loaded_sin","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/zhang2023.yaml","notes":"Split 2026-10-05 from the former single zhang2023-a row (convention d). This row is the cavity with gold microelectrodes used for DC tuning: 11 pm/V linear over +-24 V (Fig. 2f), 0 V resonance about 1559.8 nm read from Fig. 2e. Whether it…"},{"device_id":"zhang2023-b","paper_id":"zhang2023","year":2023,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"resonator","row_kind":"device","band":"","wavelength_nm":null,"length_mm":0.15,"integration":"monolithic","waveguide_platform":"lnoi_loaded_sin","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":104,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":100,"max_line_rate_gbps":100,"max_net_rate_gbps":null,"modulation_format":"NRZ up to 100 GBd (BER below 7% HD-FEC threshold 3.8e-3, offline DSP); PAM-4 100 Gb/s (50 GBd) and 80 Gb/s (40 GBd); PA…","length_q":"","evidence_ref":"data/evidence/zhang2023.yaml","notes":"Split 2026-10-05 from the former single zhang2023-a row (convention d). p.6: another topological modulator device on the same chip with a lower Q of 5400 (tau 4.5 ps, photon-lifetime limit 35 GHz, calculated) was used for the 110 GHz LCA S…"},{"device_id":"zhang2023-c","paper_id":"zhang2023","year":2023,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"resonator","row_kind":"device","band":"c_band","wavelength_nm":1558,"length_mm":null,"integration":"monolithic","waveguide_platform":"lnoi_loaded_sin","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/zhang2023.yaml","notes":"Split 2026-10-05 from the former single zhang2023-a row (convention d). Electrode-free TPC cavity on the same chip (p.5, Fig. 2d): 3 dB linewidth 0.172 nm, Q 9066, IL 1.3 dB, ER 32 dB. The ER is the contrast between the resonance transmiss…"},{"device_id":"zhang2024-a","paper_id":"zhang2024","year":2024,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":null,"length_mm":8,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"mzm_push_pull","vpil_best":2.43,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":145,"bw_q":"","bw_method":"sideband","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/zhang2024.yaml","notes":"DC Vpi 3.04 V from a kilohertz triangular sweep (frequency not given, Fig. 2a); VpiL 2.43 V cm = 3.04 x 0.8 (authors). RF Vpi at 500 GHz left empty (self-contradiction, convention y): text p.6, abstract and SI Table 2 say 8 V; Fig. 3(c) me…"},{"device_id":"zhang2024-b","paper_id":"zhang2024","year":2024,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":null,"length_mm":8,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"mzm_push_pull","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/zhang2024.yaml","notes":"Same physical device as zhang2024-a; RF Vpi 6 V at 300 GHz from the OSA sideband method (text p.6, SI Table 2); Fig. 3(c) smoothed line about 6.2-6.6 V near 297-300 GHz, calculated about 5.9-6.0 V. Only the Vpi operating point and the geom…"},{"device_id":"zhang2026a-a","paper_id":"zhang2026a","year":2026,"platform":"Other","eo_material":"ferroelectric_nematic_lc","device_class":"mzm","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":0.5,"integration":"polymer_backfill","waveguide_platform":"soi_slot","vpi_convention":"unspecified","vpil_best":0.335,"vpil_source":"derived_dc","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":224,"max_line_rate_gbps":null,"max_net_rate_gbps":414,"modulation_format":"100 m SSMF, 41-tap FFE + 1-tap DFE: PAM4 176 GBd net 330 Gb/s (HD-FEC 6.7% OH); PAM6 136 GBd net 330 Gb/s (HD-FEC); PAM…","length_q":"","evidence_ref":"data/evidence/zhang2026a.yaml","notes":"Vpi 6.7 V from a 1 MHz sinusoid. Paper gives VpiL 3.4 V mm (phase extraction; device not stated, equals 6.7 V x 0.5 mm within rounding) and in-device r33 27 pm/V. Fig. 2(a) linear to 20 Vpp (about 0.5 MV/cm). HTOL over 1000 h at 70 C, 4 Vp…"},{"device_id":"zhang2026a-b","paper_id":"zhang2026a","year":2026,"platform":"Other","eo_material":"ferroelectric_nematic_lc","device_class":"mzm","row_kind":"device","band":"","wavelength_nm":null,"length_mm":1,"integration":"polymer_backfill","waveguide_platform":"soi_slot","vpi_convention":"unspecified","vpil_best":0.32,"vpil_source":"derived_dc","vpil_q":"approx","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/zhang2026a.yaml","notes":"Vpi vs frequency from 50 mHz to 1 MHz with a DC-coupled sinusoid (Fig. 2(b)): about 2.84 to 3.21 V, changes about 10% over 7 decades. 1 MHz value (3.2 V) read from the plot; entered as quasi-static. Drive, wavelength and electrode not stat…"},{"device_id":"zhang2026b-a","paper_id":"zhang2026b","year":2026,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"o_band","wavelength_nm":1310,"length_mm":5,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"unspecified","vpil_best":2.15,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/zhang2026b.yaml","notes":"Typical wafer device. Vpi x L gives 2.15 V cm (author-stated). RF loss, n_rf and ng_opt are from CPW S-parameters of an unidentified electrode, entered on this row only. Wafer-average VpiL 2.37 +- 0.35 V cm. Geometry is the process geometr…"},{"device_id":"zhang2026b-b","paper_id":"zhang2026b","year":2026,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"o_band","wavelength_nm":null,"length_mm":5,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"unspecified","vpil_best":1.87,"vpil_source":"reported_dc","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/zhang2026b.yaml","notes":"Best of the wafer-map VpiL (Fig. 3(b) colour scale 2.0 to 3.2 V cm). Wavelength not stated for the map; Vpi not stated. 1.87 V cm x 1/0.5 cm would be 3.74 V (not entered). Geometry is the process geometry stated once for the wafer. Modulat…"},{"device_id":"zhang2026b-c","paper_id":"zhang2026b","year":2026,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"o_band","wavelength_nm":null,"length_mm":null,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":110,"bw_q":"","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/zhang2026b.yaml","notes":"Exemplary chip-level EO S21 of a few MZMs: worst about 93 GHz (red crosses -3 dB), best 110 GHz at the end of the measurement range. Device length and wavelength of these traces not stated. Geometry is the process geometry stated once for…"},{"device_id":"zheng2026-al1000","paper_id":"zheng2026","year":2026,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"","wavelength_nm":null,"length_mm":7,"integration":"micro_transfer_printed","waveguide_platform":"lnoi_loaded_sin","vpi_convention":"mzm_push_pull","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":70,"bw_q":"gt","bw_method":"link_eoe","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/zheng2026.yaml","notes":"Four MZMs on one chip, electric-optic-electric response. Authors expect about 90 GHz, limited by tools; gap and wavelength not stated. Ripple dips below -3 dB near 42 GHz in Fig. 4(h); 70 GHz+ is the authors' envelope reading."},{"device_id":"zheng2026-al500","paper_id":"zheng2026","year":2026,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"","wavelength_nm":null,"length_mm":7,"integration":"micro_transfer_printed","waveguide_platform":"lnoi_loaded_sin","vpi_convention":"mzm_push_pull","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":30,"bw_q":"lt","bw_method":"link_eoe","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/zheng2026.yaml","notes":"Four MZMs on one chip, electric-optic-electric response. Paper range 20-30 GHz; gap and wavelength not stated."},{"device_id":"zheng2026-g4","paper_id":"zheng2026","year":2026,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"","wavelength_nm":null,"length_mm":7,"integration":"micro_transfer_printed","waveguide_platform":"lnoi_loaded_sin","vpi_convention":"mzm_push_pull","vpil_best":2.8,"vpil_source":"derived_dc","vpil_q":"approx","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/zheng2026.yaml","notes":"Wafer-level Vpi vs electrode gap (design 4-6 um); Al RDL misalignment about 1 um adds about 2 dB loss. Wavelength not stated. Raw Fig. 4(d),(e) traces suggest about 5.5-6 V; text and Fig. 4(f) median give about 4 V."},{"device_id":"zheng2026-g5","paper_id":"zheng2026","year":2026,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"","wavelength_nm":null,"length_mm":7,"integration":"micro_transfer_printed","waveguide_platform":"lnoi_loaded_sin","vpi_convention":"mzm_push_pull","vpil_best":3.85,"vpil_source":"derived_dc","vpil_q":"approx","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/zheng2026.yaml","notes":"Wafer-level Vpi vs electrode gap (design 4-6 um); Al RDL misalignment about 1 um adds about 2 dB loss. Wavelength not stated."},{"device_id":"zheng2026-g6","paper_id":"zheng2026","year":2026,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"","wavelength_nm":null,"length_mm":7,"integration":"micro_transfer_printed","waveguide_platform":"lnoi_loaded_sin","vpi_convention":"mzm_push_pull","vpil_best":4.9,"vpil_source":"derived_dc","vpil_q":"approx","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/zheng2026.yaml","notes":"Wafer-level Vpi vs electrode gap (design 4-6 um); Al RDL misalignment about 1 um adds about 2 dB loss. Wavelength not stated."},{"device_id":"zheng2026-pre","paper_id":"zheng2026","year":2026,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"o_band","wavelength_nm":1310,"length_mm":7,"integration":"micro_transfer_printed","waveguide_platform":"lnoi_loaded_sin","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/zheng2026.yaml","notes":"Pre-metallisation wafer statistic: four wafers, over 600 phase modulators; about 2 dB extra loss after metallisation. No Vpi."},{"device_id":"zhong2026-a","paper_id":"zhong2026","year":2025,"platform":"SiPh","eo_material":"silicon_plasma_dispersion","device_class":"resonator","row_kind":"device","band":"c_band","wavelength_nm":1555.2,"length_mm":0.01,"integration":"foundry_native","waveguide_platform":"soi_rib","vpi_convention":"resonance_tuning_derived","vpil_best":0.38,"vpil_source":"reported_dc","vpil_q":"approx","bw3db_ghz":110,"bw_q":"gt","bw_method":"eo_s21","max_baud_gbd":130,"max_line_rate_gbps":130,"max_net_rate_gbps":null,"modulation_format":"NRZ 50, 70, 90, 110 Gb/s eyes (SNR 8.23, 6.07, 3.98, 3.17 dB); BER below 3.8e-3 at 110 Gb/s and below 2e-2 at 130 Gb/s","length_q":"","evidence_ref":"data/evidence/zhong2026.yaml","notes":"Version: version of record, Nature Communications 17:1069 (CC-BY-NC-ND 4.0 per cached PDF and Crossref); Supplementary Information (Notes 1-7, uniformity on other devices) not cached. device_class other: resonant photonic-crystal nanobeam…"},{"device_id":"zhou2026-a","paper_id":"zhou2026","year":2026,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"mzm","row_kind":"device","band":"","wavelength_nm":null,"length_mm":null,"integration":"foundry_native","waveguide_platform":"","vpi_convention":"unspecified","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":67,"bw_q":"gt","bw_method":"eo_s21","max_baud_gbd":182.5,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"PAM4, PRBSQ, 140 to 182.5 GBd; TDECQ 3.7 dB at 160 GBd with 15-tap FFE (KP4 FEC threshold 2.4e-4); at 180 GBd 2.5 dB wi…","length_q":"","evidence_ref":"data/evidence/zhou2026.yaml","notes":"Designed and fabricated by Liobate Technology (p.1): integration foundry_native (convention ee). 3 dB not reached in measurement: bw3db is the 67 GHz end of the measured trace; authors' extrapolated >140 GHz (simulation curve) not entered.…"},{"device_id":"zhu2022-a","paper_id":"zhu2022","year":2021,"platform":"TFLN","eo_material":"lithium_niobate","device_class":"phase_shifter","row_kind":"device","band":"c_band","wavelength_nm":1550,"length_mm":null,"integration":"monolithic","waveguide_platform":"lnoi_rib","vpi_convention":"per_arm_phase_shifter","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/zhu2022.yaml","notes":"Double-pass design: the waveguide passes the velocity-matched CPW electrode twice (p.2; Fig. S1a; design details in the authors' ref 30, not read). Vpi was measured against RF frequency, 10-40 GHz in 100 MHz steps at 13.0 and 19.0 dBm, by…"},{"device_id":"zwickel2020-design-0p5mm","paper_id":"zwickel2020","year":2019,"platform":"Polymer","eo_material":"eo_polymer","device_class":"mzm","row_kind":"design","band":"","wavelength_nm":null,"length_mm":0.5,"integration":"polymer_backfill","waveguide_platform":"soi_slot","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"indirect","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/zwickel2020.yaml","notes":"Projection from the doping-optimization study (Figs. 11, 12), not a device and not a single computed operating point. Authors state a 0.5 mm SOH modulator could reach f6dB,EOE above 100 GHz with doping-related optical excess loss below 0.1…"},{"device_id":"zwickel2020-design-1mm","paper_id":"zwickel2020","year":2019,"platform":"Polymer","eo_material":"eo_polymer","device_class":"mzm","row_kind":"design","band":"","wavelength_nm":null,"length_mm":1,"integration":"polymer_backfill","waveguide_platform":"soi_slot","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":null,"bw_q":"","bw_method":"indirect","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/zwickel2020.yaml","notes":"Simulated design example, not a fabricated device. The authors' Eq. (6) model with the stated parameters predicts f6dB,EOE = 114 GHz for 1 mm; response normalized to zero frequency with matched source and termination, 6 dB electrical-optic…"},{"device_id":"zwickel2020-gate0","paper_id":"zwickel2020","year":2019,"platform":"Polymer","eo_material":"eo_polymer","device_class":"mzm","row_kind":"device","band":"","wavelength_nm":null,"length_mm":0.75,"integration":"polymer_backfill","waveguide_platform":"soi_slot","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":3,"bw_q":"approx","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/zwickel2020.yaml","notes":"Source: arXiv v1 (2001.02642v1, 27 pages); the Optics Express version of record is not cached, so its numbers are not claimed. Equivalent-circuit modelling paper: the measured device is a 750 um SOH MZM terminated with 50 ohm, small-signal…"},{"device_id":"zwickel2020-gate300","paper_id":"zwickel2020","year":2019,"platform":"Polymer","eo_material":"eo_polymer","device_class":"mzm","row_kind":"device","band":"","wavelength_nm":null,"length_mm":0.75,"integration":"polymer_backfill","waveguide_platform":"soi_slot","vpi_convention":"","vpil_best":null,"vpil_source":"","vpil_q":"","bw3db_ghz":20,"bw_q":"approx","bw_method":"eo_s21","max_baud_gbd":null,"max_line_rate_gbps":null,"max_net_rate_gbps":null,"modulation_format":"","length_q":"","evidence_ref":"data/evidence/zwickel2020.yaml","notes":"Source: arXiv v1 (2001.02642v1, 27 pages); the Optics Express version of record is not cached, so its numbers are not claimed. Equivalent-circuit modelling paper: the measured device is a 750 um SOH MZM terminated with 50 ohm, small-signal…"}],"papers":[{"paper_id":"aihara2026","title":"4-ch × 400-Gbps PAM4 O-band Membrane InGaAlAs EA-DFB Laser Array on a Si Photonics Platform","first_author":"Aihara","n_authors":7,"year":2026,"venue":"Optical Fiber Communication Conference (OFC) 2026, paper Th4A.1","doi":"10.1364/ofc.2026.th4a.1","url":"https://doi.org/10.1364/ofc.2026.th4a.1","countries":"JP","foundry_or_fab":"","wafer_supplier":"","discovered_via":"ofc2026;local_corpus","redistribution":"restricted_local_only"},{"paper_id":"aimone2026","title":"Truly-Differential Drive of TFLN TWE-MZM by Linear SiGe Driver in a Codesigned Hybrid Integrated Assembly","first_author":"Aimone","n_authors":10,"year":2026,"venue":"Optical Fiber Communication Conference (OFC) 2026, paper M4D.4","doi":"10.1364/ofc.2026.m4d.4","url":"https://doi.org/10.1364/ofc.2026.m4d.4","countries":"DE;US","foundry_or_fab":"","wafer_supplier":"","discovered_via":"ofc2026;local_corpus","redistribution":"restricted_local_only"},{"paper_id":"akazawa2026","title":"Ultralow-power, high-speed programmable Si photonic circuits with InGaAsP membrane","first_author":"Akazawa","n_authors":9,"year":2026,"venue":"arXiv","doi":"","url":"https://arxiv.org/abs/2609.24611","countries":"JP","foundry_or_fab":"Takeda Sentanchi Super Cleanroom","wafer_supplier":"","discovered_via":"blog:OFS-69","redistribution":"restricted_local_only"},{"paper_id":"anderson2025","title":"Quantum critical electro-optic and piezo-electric nonlinearities","first_author":"Anderson","n_authors":11,"year":2025,"venue":"Science 390(6771), 394-399","doi":"10.1126/science.adx8657","url":"https://doi.org/10.1126/science.adx8657","countries":"US;BE","foundry_or_fab":"nano@stanford","wafer_supplier":"","discovered_via":"blog:OFS-69","redistribution":"open_license_ok"},{"paper_id":"anjali2025","title":"Design of Carrier-Depletion-based Modulators on Commercially Available SOI Substrates of Varying Device-Layer Thickness","first_author":"Anjali","n_authors":3,"year":2025,"venue":"arXiv","doi":"","url":"https://arxiv.org/abs/2510.25530","countries":"IN","foundry_or_fab":"","wafer_supplier":"","discovered_via":"web_search;author_group_followup","redistribution":"restricted_local_only"},{"paper_id":"arabjuneghani2022","title":"Thin-Film Lithium Niobate Optical Modulators with an Extrapolated Bandwidth of 170 GHz","first_author":"Juneghani","n_authors":9,"year":2022,"venue":"Advanced Photonics Research 4(1), 2200216","doi":"10.1002/adpr.202200216","url":"https://doi.org/10.1002/adpr.202200216","countries":"US","foundry_or_fab":"","wafer_supplier":"","discovered_via":"landmark","redistribution":"open_license_ok"},{"paper_id":"axline2026","title":"Stable, bidirectional electro-optic transduction in thin film lithium tantalate","first_author":"Axline","n_authors":9,"year":2026,"venue":"arXiv preprint","doi":"","url":"https://arxiv.org/abs/2606.12726","countries":"CH","foundry_or_fab":"","wafer_supplier":"NanoLN","discovered_via":"web_search;author_group_followup","redistribution":"open_license_ok"},{"paper_id":"bankwitz2026","title":"Voltage-Programmable Photon Statistics Using a High-Extinction Thin-film Lithium Niobate Modulator","first_author":"Bankwitz","n_authors":12,"year":2026,"venue":"npj Nanophotonics 3(1), 34","doi":"10.1038/s44310-026-00129-1","url":"https://doi.org/10.1038/s44310-026-00129-1","countries":"DE","foundry_or_fab":"","wafer_supplier":"","discovered_via":"web_search;author_group_followup","redistribution":"open_license_ok"},{"paper_id":"bao2026a","title":"Ultra-High Bandwidth Silicon Microring Modulator with T-Coil Inductive Peaking for >400 Gbps Transmission","first_author":"Bao","n_authors":7,"year":2026,"venue":"Optical Fiber Communication Conference (OFC) 2026, paper M2A.2","doi":"10.1364/ofc.2026.m2a.2","url":"https://doi.org/10.1364/ofc.2026.m2a.2","countries":"CN","foundry_or_fab":"","wafer_supplier":"","discovered_via":"ofc2026;local_corpus","redistribution":"restricted_local_only"},{"paper_id":"bao2026b","title":"A 4 Tbps 16-Channel DWDM Transmitter Using Extended-Depletion Silicon Photonic Microdisk Modulator Array","first_author":"Bao","n_authors":8,"year":2026,"venue":"Optical Fiber Communication Conference (OFC) 2026, paper W2A.12","doi":"10.1364/ofc.2026.w2a.12","url":"https://doi.org/10.1364/ofc.2026.w2a.12","countries":"CN","foundry_or_fab":"","wafer_supplier":"","discovered_via":"ofc2026;local_corpus","redistribution":"restricted_local_only"},{"paper_id":"behzadfar2026","title":"Ultimate Performance of Thin-Film Lithium Niobate Mach-Zehnder Modulators","first_author":"Behzadfar","n_authors":4,"year":2026,"venue":"arXiv","doi":"","url":"https://arxiv.org/abs/2609.16379","countries":"US","foundry_or_fab":"","wafer_supplier":"","discovered_via":"web_search;author_group_followup","redistribution":"open_license_ok"},{"paper_id":"berman2026","title":"Monolithic Barium Titanate Nanophotonics and Electro-optics","first_author":"Berman","n_authors":3,"year":2026,"venue":"arXiv","doi":"","url":"https://arxiv.org/abs/2607.03690","countries":"US","foundry_or_fab":"NUFAB facility of the NUANCE Center","wafer_supplier":"La Luce Cristallina","discovered_via":"web_search;author_group_followup","redistribution":"open_license_ok"},{"paper_id":"bhasker2026","title":"400G per lane Differential Drive Electroabsorption Modulated Lasers (EML) with 99GHz 6-dB EO BW for next generation 3.2T IM-DD Applications","first_author":"Bhasker","n_authors":6,"year":2026,"venue":"Optical Fiber Communication Conference (OFC) 2026, paper Tu3J.6","doi":"10.1364/ofc.2026.tu3j.6","url":"https://doi.org/10.1364/ofc.2026.tu3j.6","countries":"US","foundry_or_fab":"Broadcom Inc.","wafer_supplier":"","discovered_via":"ofc2026;local_corpus","redistribution":"restricted_local_only"},{"paper_id":"boynton2020","title":"A heterogeneously integrated silicon photonic/lithium niobate travelling wave electro-optic modulator","first_author":"Boynton","n_authors":12,"year":2020,"venue":"Optics Express 28(2), 1868","doi":"10.1364/oe.28.001868","url":"https://doi.org/10.1364/oe.28.001868","countries":"US","foundry_or_fab":"Sandia National Laboratories","wafer_supplier":"NanoLN","discovered_via":"landmark","redistribution":"restricted_local_only"},{"paper_id":"cai2025","title":"Heterogeneously integrated lithium tantalate-on-silicon nitride modulators for high-speed communications","first_author":"Cai","n_authors":12,"year":2025,"venue":"Nature Communications 17(1), 3314","doi":"10.1038/s41467-026-69769-3","url":"https://doi.org/10.1038/s41467-026-69769-3","countries":"CH;DE;CN","foundry_or_fab":"Center of MicroNanoTechnology","wafer_supplier":"Shanghai Novel Si Integration Technology (NSIT); SIMIT-CAS (LTOI wafers)","discovered_via":"blog:OFS-61","redistribution":"open_license_ok"},{"paper_id":"cai2026","title":"Low Loss Electro-absorption Modulator with Extrapolated Bandwidth of 180 GHz Enabled by Ultra-thin Ge Process","first_author":"Cai","n_authors":7,"year":2026,"venue":"Optical Fiber Communication Conference (OFC) 2026, paper Tu3J.2","doi":"10.1364/ofc.2026.tu3j.2","url":"https://doi.org/10.1364/ofc.2026.tu3j.2","countries":"CN","foundry_or_fab":"","wafer_supplier":"","discovered_via":"ofc2026;local_corpus","redistribution":"restricted_local_only"},{"paper_id":"celik2022","title":"High-bandwidth CMOS-voltage-level electro-optic modulation of 780 nm light in thin-film lithium niobate","first_author":"Celik","n_authors":10,"year":2022,"venue":"Optics Express 30(13), 23177","doi":"10.1364/oe.460119","url":"https://doi.org/10.1364/oe.460119","countries":"US","foundry_or_fab":"nano@stanford","wafer_supplier":"","discovered_via":"landmark","redistribution":"restricted_local_only"},{"paper_id":"chaudhury2024","title":"Micro-Ring Modulator Linearity Enhancement for Analog and Digital Optical Links","first_author":"Chaudhury","n_authors":6,"year":2024,"venue":"IEEE Photonics Technology Letters 36(24), 1457-1460","doi":"10.1109/lpt.2024.3488699","url":"https://doi.org/10.1109/lpt.2024.3488699","countries":"US","foundry_or_fab":"Applied Nanotools Inc.","wafer_supplier":"","discovered_via":"web_search;author_group_followup","redistribution":"restricted_local_only"},{"paper_id":"chelladurai2025","title":"Barium titanate and lithium niobate permittivity and Pockels coefficients from megahertz to sub-terahertz frequencies","first_author":"Chelladurai","n_authors":10,"year":2025,"venue":"Nature Materials 24(6), 868-875","doi":"10.1038/s41563-025-02158-1","url":"https://doi.org/10.1038/s41563-025-02158-1","countries":"CH","foundry_or_fab":"Binnig and Rohrer Nanotechnology Center","wafer_supplier":"La Luce Cristallina (BTO thin film, acknowledgements); LN-on-insulator supplier not named","discovered_via":"drive_doc;local_corpus","redistribution":"open_license_ok"},{"paper_id":"chen2022","title":"High performance thin-film lithium niobate modulator on a silicon substrate using periodic capacitively loaded traveling-wave electrode","first_author":"Chen","n_authors":11,"year":2022,"venue":"APL Photonics 7, 026103","doi":"10.1063/5.0077232","url":"https://doi.org/10.1063/5.0077232","countries":"CN;HK","foundry_or_fab":"","wafer_supplier":"","discovered_via":"local_corpus","redistribution":"open_license_ok"},{"paper_id":"chen2023","title":"Compact slow‐light waveguide and modulator on thin‐film lithium niobate platform","first_author":"Chen","n_authors":7,"year":2023,"venue":"Nanophotonics 12(18), 3603","doi":"10.1515/nanoph-2023-0306","url":"https://doi.org/10.1515/nanoph-2023-0306","countries":"CN","foundry_or_fab":"","wafer_supplier":"NanoLN","discovered_via":"web_search;author_group_followup","redistribution":"open_license_ok"},{"paper_id":"chen2023a","title":"High-Efficiency Electro-Optic Modulator on Thin-Film Lithium Niobate with High-Permittivity Cladding","first_author":"Chen","n_authors":5,"year":2023,"venue":"Laser & Photonics Reviews 17(11), 2200927","doi":"10.1002/lpor.202200927","url":"https://doi.org/10.1002/lpor.202200927","countries":"CN","foundry_or_fab":"Zhejiang University Micro and Nano Processing Platform","wafer_supplier":"NanoLN","discovered_via":"web_search;author_group_followup","redistribution":"restricted_local_only"},{"paper_id":"chen2024","title":"Mono-drive single-sideband modulation via optical delay lines on thin-film lithium niobate","first_author":"Chen","n_authors":8,"year":2024,"venue":"Optica 12(5), 666","doi":"10.1364/optica.545383","url":"https://doi.org/10.1364/optica.545383","countries":"HK","foundry_or_fab":"Nanosystem Fabrication Facility","wafer_supplier":"NanoLN (written NONOLN in the paper)","discovered_via":"web_search;author_group_followup","redistribution":"restricted_local_only"},{"paper_id":"chen2025","title":"Ultra-Compact and Ultra-High Speed Topological Photonic Crystal Modulator Based on Thin Film Lithium Niobate","first_author":"Chen","n_authors":9,"year":2025,"venue":"Laser & Photonics Reviews 19(21), e00380","doi":"10.1002/lpor.202500380","url":"https://doi.org/10.1002/lpor.202500380","countries":"CN","foundry_or_fab":"","wafer_supplier":"NanoLN","discovered_via":"web_search;author_group_followup","redistribution":"restricted_local_only"},{"paper_id":"chen2026","title":"Thin-film lithium tantalate electro-optic modulator with balanced bandwidth-voltage and low DC drift","first_author":"Chen","n_authors":8,"year":2026,"venue":"Optics Express 34(9), 17229","doi":"10.1364/oe.595937","url":"https://doi.org/10.1364/oe.595937","countries":"CN","foundry_or_fab":"","wafer_supplier":"","discovered_via":"landmark","redistribution":"restricted_local_only"},{"paper_id":"chiang2025","title":"Ferroelectric Nematic Liquid Crystal-Based Silicon Photonic Modulator Demonstrated at 102 Gbit/s PAM-4","first_author":"Chiang","n_authors":8,"year":2025,"venue":"arXiv","doi":"","url":"https://arxiv.org/abs/2507.14724","countries":"US;TW","foundry_or_fab":"","wafer_supplier":"","discovered_via":"blog:OFS-69","redistribution":"open_license_ok"},{"paper_id":"churaev2023","title":"A heterogeneously integrated lithium niobate-on-silicon nitride photonic platform","first_author":"Churaev","n_authors":16,"year":2021,"venue":"Nature Communications 14, 3499","doi":"10.1038/s41467-023-39047-7","url":"https://doi.org/10.1038/s41467-023-39047-7","countries":"CH","foundry_or_fab":"Binnig and Rohrer Nanotechnology Center;Center of MicroNanoTechnology","wafer_supplier":"NanoLN","discovered_via":"landmark","redistribution":"open_license_ok"},{"paper_id":"datta2020","title":"Low-loss composite photonic platform based on 2D semiconductor monolayers","first_author":"Datta","n_authors":12,"year":2019,"venue":"Nature Photonics 14(4), 256-262","doi":"10.1038/s41566-020-0590-4","url":"https://doi.org/10.1038/s41566-020-0590-4","countries":"US","foundry_or_fab":"Advanced Science Research Center NanoFabrication Facility;Cornell NanoScale Facility;Columbia Nano Initiative","wafer_supplier":"","discovered_via":"web_search;author_group_followup","redistribution":"restricted_local_only"},{"paper_id":"datta2024","title":"2D material platform for overcoming the amplitude–phase tradeoff in ring resonators","first_author":"Datta","n_authors":6,"year":2022,"venue":"Optica 11(1), 48","doi":"10.1364/optica.498484","url":"https://doi.org/10.1364/optica.498484","countries":"US;SG","foundry_or_fab":"Advanced Science Research Center NanoFabrication Facility;Columbia Nano Initiative","wafer_supplier":"","discovered_via":"web_search;author_group_followup","redistribution":"restricted_local_only"},{"paper_id":"deng2026","title":"Self-buffered epitaxy of barium titanate on oxide insulators enables high-performance electro-optic modulators","first_author":"Deng","n_authors":19,"year":2026,"venue":"Light: Science & Applications 15, 21 (2026)","doi":"10.1038/s41377-025-02081-9","url":"https://doi.org/10.1038/s41377-025-02081-9","countries":"CN","foundry_or_fab":"","wafer_supplier":"","discovered_via":"landmark;local_corpus","redistribution":"open_license_ok"},{"paper_id":"deng2026a","title":"A 336Gb/s/lane 2.47pJ/b Integrated Transmitter with Silicon Photonic TW-MZM and BW-Boost High-Linearity Driver","first_author":"Deng","n_authors":15,"year":2026,"venue":"Optical Fiber Communication Conference (OFC) 2026, paper M2B.3","doi":"10.1364/ofc.2026.m2b.3","url":"https://doi.org/10.1364/ofc.2026.m2b.3","countries":"CN","foundry_or_fab":"","wafer_supplier":"","discovered_via":"ofc2026;local_corpus","redistribution":"restricted_local_only"},{"paper_id":"derose2012","title":"High speed travelling wave carrier depletion silicon Mach-Zehnder modulator","first_author":"DeRose","n_authors":4,"year":2012,"venue":"2012 Optical Interconnects Conference, paper WC6, pp. 135-136","doi":"10.1109/oic.2012.6224486","url":"https://doi.org/10.1109/oic.2012.6224486","countries":"US","foundry_or_fab":"","wafer_supplier":"","discovered_via":"local_corpus","redistribution":"restricted_local_only"},{"paper_id":"didier2026","title":"Thin film lithium niobate on sapphire for integrated mid-infrared modulator","first_author":"Didier","n_authors":11,"year":2026,"venue":"Nature Communications 17(1), 3050","doi":"10.1038/s41467-026-69880-5","url":"https://doi.org/10.1038/s41467-026-69880-5","countries":"CH;CN","foundry_or_fab":"Binnig and Rohrer Nanotechnology Center;FIRST Center for Micro- and Nanoscience","wafer_supplier":"NGK Insulator, LTD (x-cut LN-on-sapphire wafers, 0.9 and 1.5 um films; as written in Methods)","discovered_via":"landmark","redistribution":"open_license_ok"},{"paper_id":"dong2026","title":"400G/lane PAM4 Modulation Using Silicon Mach-Zehnder 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2366","doi":"10.1364/prj.464650","url":"https://doi.org/10.1364/prj.464650","countries":"HK;CN","foundry_or_fab":"","wafer_supplier":"NanoLN","discovered_via":"web_search;author_group_followup","redistribution":"open_license_ok"},{"paper_id":"fukui2025","title":"17 GHz Lossless InP-Membrane Active Metasurface","first_author":"Fukui","n_authors":15,"year":2025,"venue":"Science Advances 11(49), eaea3538","doi":"10.1126/sciadv.aea3538","url":"https://doi.org/10.1126/sciadv.aea3538","countries":"JP","foundry_or_fab":"d.lab","wafer_supplier":"","discovered_via":"web_search;author_group_followup","redistribution":"open_license_ok"},{"paper_id":"gaier2025","title":"Wireless millimeterwave electro-optics on thin film lithium 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740-750","doi":"10.1038/s41566-025-01686-1","url":"https://doi.org/10.1038/s41566-025-01686-1","countries":"CA","foundry_or_fab":"Advanced Micro Foundry;CMC Microsystems","wafer_supplier":"","discovered_via":"blog:OFS-69","redistribution":"open_license_ok"},{"paper_id":"ghavami2023","title":"A new bandwidth-voltage trade-off paradigm in low-loss LNOI electro-optic modulators, using equalizer configuration","first_author":"Ghavami","n_authors":3,"year":2023,"venue":"arXiv","doi":"","url":"https://arxiv.org/abs/2311.16679","countries":"IR","foundry_or_fab":"","wafer_supplier":"","discovered_via":"web_search;author_group_followup","redistribution":"restricted_local_only"},{"paper_id":"giambra2021","title":"Wafer-Scale Integration of Graphene-Based Photonic Devices","first_author":"Giambra","n_authors":10,"year":2020,"venue":"ACS Nano 15(2), 3171-3187 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4001-4009","doi":"10.1515/nanoph-2021-0796","url":"https://doi.org/10.1515/nanoph-2021-0796","countries":"US","foundry_or_fab":"","wafer_supplier":"","discovered_via":"web_search;author_group_followup","redistribution":"open_license_ok"},{"paper_id":"guo2026","title":"Robust and Active Visible-Light Integrated Photonics on Thin-Film Lithium Tantalate for Underwater Optical Wireless Communications","first_author":"Guo","n_authors":12,"year":2026,"venue":"arXiv","doi":"","url":"https://arxiv.org/abs/2603.14346","countries":"CN","foundry_or_fab":"","wafer_supplier":"","discovered_via":"web_search;author_group_followup","redistribution":"restricted_local_only"},{"paper_id":"gupta2023","title":"Implementation, Modelling and Verification of High-Speed Mach-Zehnder Phase Modulators in an Open Access InP Foundry Platform","first_author":"Gupta","n_authors":7,"year":2023,"venue":"Journal of Lightwave Technology 41(11) 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359-364","doi":"10.1038/s41566-019-0378-6","url":"https://doi.org/10.1038/s41566-019-0378-6","countries":"CN","foundry_or_fab":"","wafer_supplier":"","discovered_via":"landmark","redistribution":"restricted_local_only"},{"paper_id":"heidari2022","title":"Integrated ultra-high-performance graphene optical modulator","first_author":"Heidari","n_authors":8,"year":2021,"venue":"Nanophotonics 11(17), 4011-4016","doi":"10.1515/nanoph-2021-0797","url":"https://doi.org/10.1515/nanoph-2021-0797","countries":"US","foundry_or_fab":"","wafer_supplier":"","discovered_via":"web_search;author_group_followup","redistribution":"open_license_ok"},{"paper_id":"hess2026","title":"O-Band Silicon-Plasmonic Resonant Ring Modulator Demonstrating Net-Rates of 400 Gbps","first_author":"Hess","n_authors":11,"year":2026,"venue":"Optical Fiber Communication Conference (OFC) 2026, paper 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24693","doi":"10.1364/oe.390315","url":"https://doi.org/10.1364/oe.390315","countries":"DE;US","foundry_or_fab":"Institute of Microelectronics","wafer_supplier":"","discovered_via":"landmark","redistribution":"restricted_local_only"},{"paper_id":"kim2025","title":"Low-loss monolithic barium titanate on insulator integrated photonics with intrinsic quality factor >1 million","first_author":"Kim","n_authors":3,"year":2025,"venue":"Optics Letters 51(14), 3984","doi":"10.1364/ol.601610","url":"https://doi.org/10.1364/ol.601610","countries":"US","foundry_or_fab":"","wafer_supplier":"","discovered_via":"blog:OFS-69","redistribution":"restricted_local_only"},{"paper_id":"kohli2023","title":"Plasmonic Ferroelectric Modulator Monolithically Integrated on SiN for 216 GBd Data Transmission","first_author":"Kohli","n_authors":14,"year":2023,"venue":"Journal of Lightwave Technology 41(12), 3825-3831","doi":"10.1109/jlt.2023.3260064","url":"https://doi.org/10.1109/jlt.2023.3260064","countries":"CH","foundry_or_fab":"Binnig and Rohrer Nanotechnology Center","wafer_supplier":"","discovered_via":"local_corpus","redistribution":"restricted_local_only"},{"paper_id":"kohli2025","title":"The plasmonic BTO-on-SiN platform – beyond 200 GBd modulation for optical communications","first_author":"Kohli","n_authors":16,"year":2025,"venue":"Light: Science & Applications 14, 399","doi":"10.1038/s41377-025-02116-1","url":"https://doi.org/10.1038/s41377-025-02116-1","countries":"CH","foundry_or_fab":"LIGENTEC;Lumiphase;Binnig and Rohrer Nanotechnology Center","wafer_supplier":"LIGENTEC (SiN wafers); Lumiphase (BTO growth and integration)","discovered_via":"local_corpus","redistribution":"open_license_ok"},{"paper_id":"kotz2026","title":"Silicon-Organic Hybrid (SOH) IQ Modulators with Sub-1 V π-Voltages Operating at 200 GBd 16QAM and 144 GBd 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100300-100311","doi":"10.1109/access.2022.3207764","url":"https://doi.org/10.1109/access.2022.3207764","countries":"US","foundry_or_fab":"","wafer_supplier":"NanoLN","discovered_via":"web_search;author_group_followup","redistribution":"restricted_local_only"},{"paper_id":"nelan2022a","title":"Integrated Lithium Niobate Intensity Modulator on a Silicon Handle With Slow-Wave Electrodes","first_author":"Nelan","n_authors":7,"year":2022,"venue":"IEEE Photonics Technology Letters 34(18), 981-984","doi":"10.1109/lpt.2022.3197085","url":"https://doi.org/10.1109/lpt.2022.3197085","countries":"US","foundry_or_fab":"","wafer_supplier":"NanoLN","discovered_via":"web_search;author_group_followup","redistribution":"restricted_local_only"},{"paper_id":"nenezic2026","title":"A variability-aware simulation and design workflow for wafer-scale, heterogeneously integrated lithium niobate 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225-231","doi":"10.1038/s41566-025-01832-9","url":"https://doi.org/10.1038/s41566-025-01832-9","countries":"BE","foundry_or_fab":"imec","wafer_supplier":"","discovered_via":"landmark;local_corpus","redistribution":"restricted_local_only"},{"paper_id":"oe2026","title":"Differential Drive EML with Tandem Modulator Structure for 200G/Lane and Beyond Applications","first_author":"Oe","n_authors":12,"year":2026,"venue":"Optical Fiber Communication Conference (OFC) 2026, paper Tu3J.4","doi":"10.1364/ofc.2026.tu3j.4","url":"https://doi.org/10.1364/ofc.2026.tu3j.4","countries":"JP","foundry_or_fab":"","wafer_supplier":"","discovered_via":"ofc2026;local_corpus","redistribution":"restricted_local_only"},{"paper_id":"ogiso2016","title":"100 Gb/s and 2 V Vπ InP Mach-Zehnder modulator with an n-i-p-n heterostructure","first_author":"Ogiso","n_authors":7,"year":2016,"venue":"Electronics Letters, vol. 52, no. 22, pp. 1866-1867 (27 October 2016 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10330","doi":"10.1038/s41467-025-65293-y","url":"https://doi.org/10.1038/s41467-025-65293-y","countries":"HK;CN","foundry_or_fab":"","wafer_supplier":"NanoLN","discovered_via":"web_search;author_group_followup","redistribution":"open_license_ok"},{"paper_id":"zhang2026a","title":"Ferroelectric Nematic Glass-Based Silicon Photonics Modulator for Net 400 Gbps IM/DD Transmission","first_author":"Zhang","n_authors":20,"year":2026,"venue":"Optical Fiber Communication Conference (OFC) 2026, paper M2B.4","doi":"10.1364/ofc.2026.m2b.4","url":"https://doi.org/10.1364/ofc.2026.m2b.4","countries":"CA;US","foundry_or_fab":"","wafer_supplier":"Polaris Electro-Optics, Inc.","discovered_via":"ofc2026;local_corpus","redistribution":"restricted_local_only"},{"paper_id":"zhang2026b","title":"Thin-Film Lithium Niobate Modulators with 110 GHz Bandwidth and 1.9 V·cm Efficiency on 200-mm Silicon Substrate","first_author":"Zhang","n_authors":12,"year":2026,"venue":"Optical Fiber Communication Conference (OFC) 2026, paper W1A.3","doi":"10.1364/ofc.2026.w1a.3","url":"https://doi.org/10.1364/ofc.2026.w1a.3","countries":"SG","foundry_or_fab":"","wafer_supplier":"NanoLN","discovered_via":"ofc2026;local_corpus","redistribution":"restricted_local_only"},{"paper_id":"zhang2026c","title":"Microwave Characteristics and Bandwidth of BaTiO3 Crystal Film Waveguide Electrooptic Modulator to Match the Light-Wave Standard (Invited)","first_author":"Zhang","n_authors":6,"year":2026,"venue":"physica status solidi (RRL) – Rapid Research Letters 20(1), e202500340","doi":"10.1002/pssr.202500340","url":"https://doi.org/10.1002/pssr.202500340","countries":"CN","foundry_or_fab":"","wafer_supplier":"","discovered_via":"web_search;author_group_followup","redistribution":"restricted_local_only"},{"paper_id":"zheng2026","title":"Micro-Transfer Printing of Lithium Niobate on 200 mm Silicon Photonics: A High-Speed Heterogeneous Wafer-Scale Platform","first_author":"Zheng","n_authors":24,"year":2026,"venue":"arXiv","doi":"","url":"https://arxiv.org/abs/2605.28971","countries":"BE","foundry_or_fab":"imec","wafer_supplier":"","discovered_via":"blog:OFS-104","redistribution":"restricted_local_only"},{"paper_id":"zhong2026","title":"Ultracompact and large-bandwidth silicon modulator in a CMOS-compatible foundry","first_author":"Zhong","n_authors":9,"year":2025,"venue":"Nature Communications 17, 1069","doi":"10.1038/s41467-025-67826-x","url":"https://doi.org/10.1038/s41467-025-67826-x","countries":"CN;SG","foundry_or_fab":"Advanced Micro Foundry","wafer_supplier":"","discovered_via":"web_search","redistribution":"restricted_local_only"},{"paper_id":"zhou2026","title":"400G/lane for Linear-drive Optics Applications","first_author":"Zhou","n_authors":7,"year":2026,"venue":"Optical Fiber Communication Conference (OFC) 2026, paper Th1C.3","doi":"10.1364/ofc.2026.th1c.3","url":"https://doi.org/10.1364/ofc.2026.th1c.3","countries":"US;CN","foundry_or_fab":"Liobate","wafer_supplier":"","discovered_via":"ofc2026;local_corpus","redistribution":"restricted_local_only"},{"paper_id":"zhu2022","title":"Spectral control of nonclassical light pulses using an integrated thin-film lithium niobate modulator","first_author":"Zhu","n_authors":14,"year":2021,"venue":"Light: Science & Applications 11(1), 327","doi":"10.1038/s41377-022-01029-7","url":"https://doi.org/10.1038/s41377-022-01029-7","countries":"US;SG","foundry_or_fab":"Center for Nanoscale Systems","wafer_supplier":"","discovered_via":"web_search;author_group_followup","redistribution":"restricted_local_only"},{"paper_id":"zwickel2020","title":"Verified equivalent-circuit model for slot-waveguide modulators","first_author":"Zwickel","n_authors":10,"year":2019,"venue":"Optics Express 28(9), 12951","doi":"10.1364/oe.383120","url":"https://doi.org/10.1364/oe.383120","countries":"DE;JP","foundry_or_fab":"","wafer_supplier":"","discovered_via":"web_search;author_group_followup","redistribution":"restricted_local_only"}]}