lithium niobateLiNbO3
PPLN Λ = 18.99 µm · 1550 → 775 nm · 2 px/µm
lithium niobate / 06 Devices / 6.12

6.12 Records (provisional)

L1 Phenomenon

Highest reported value per metric in the literature searched to 2026-10-24, each with its date and paper.

Records, provisional: highest found per metric20 rows; each axis covers three decades around its own value
MetricLog axisValuePlatformDateFirst author, venueDOISource checkedDataset id
Dry-etched ring intrinsic Q10610710810929 million (1.3 dB/m)
ion-sliced, telecom
TFLN2024-07Zhu, Photon. Res. 12, A63, 202410.1364/prj.521172Yloss-q-zhu2024
Ring Q, CMP1071081091010Q > 108; about 0.28 dB/m
film thinned from bulk
TFLN2022Gao, Chin. Opt. Lett. 20, 011902, 202210.3788/col202220.011902Y(arXiv)loss-q-gao2022
Material-limited loss estimate1071081091010about 0.2 dB/m (material Q about 1.6×108)
annealed ion-sliced
TFLN2022-08Shams-Ansari, APL Photonics, 202210.1063/5.0095146Y (inferred limit)loss-q-shamsansari2022
Wafer-scale waveguide loss10−210−11100.27 dB/cm
DUV, 4- and 6-inch
TFLN2020Luke, Opt. Express, 202010.1364/oe.401959Ywafer-foundry-luke2020
Measured 3 dB EO bandwidth10102103104170 GHz (295 GHz at 6 dB)
measured to 325 GHz; model-verified
TFLN2022-09Zhang, Photon. Res. 10, 2380, 202210.1364/prj.468518Ymodulator-zhang2022
Telecom VπL, non-resonant10−210−11100.21 V cm
1 mm slow-light MZM, > 110 GHz
SiN-loaded TFLN2024-10-12Shen, Laser Photon. Rev. 19, 2401092, 202410.1002/lpor.202401092Ymodulator-shen2024
Telecom VπL, ridge-top electrodes10−210−11100.33 V cm
300 µm, 145 GHz extrapolated
TFLN2025-09Yu, Opt. Express 33, 41353, 202510.1364/oe.572384Ymodulator-yu2025
Single-wavelength symbol rate with a TFLN modulator10102103104440 GBd PS-16-ASK
221 GHz band-interleaved DAC
TFLN2025Deakin, OFC 2025 Th4B.7; Che, JLT 44, 1178, 202610.1364/ofc.2025.th4b.7Ysymbol-rate-deakin2025
Coherent net rate, single wavelength10−11101021.96 Tb/s
dual-polarization IQ, 110 GHz
TFLN2022Xu, Optica 9, 61, 202210.1364/OPTICA.449691Ysymbol-rate-xu2022
Line rate, IM/DD, any platform10102103104768 Gb/s (536 Gb/s net)
highest symbol rate in the paper 226 GBd
TFLT2026Xu, OFC 2026 Th4A.210.1364/ofc.2026.th4a.2Y(conf), atlastflt-xu2026-th4a2
Normalized SHG, waveguide1021031041059,600 %/W/cm2
double-layer
TFLN2024Li, Adv. Photon. Nexus 3, 066009, 202410.1117/1.APN.3.6.066009Yshg-li2024
SHG, microring1051061071085,000,000 %/W
z-cut PPLN ring
TFLN2020Lu, Optica 7, 1654, 202010.1364/OPTICA.403931Yshg-lu2020
OPA gain11010210371 dB (118 dB/cm) unsaturated
fs pump, 4 pJ
TFLN2022Jankowski, Optica 9, 273, 202210.1364/OPTICA.442550Yopa-opo-jankowski2022
CW OPO threshold11010210319.6 µW
PLACE microdisk
TFLN2021Gao, New J. Phys., 202110.1088/1367-2630/ac3d52Yopa-opo-gao2021
On-chip squeezing, measured10−11101024.9 dB
> 25 THz
TFLN2022Nehra, Science 377, 1333, 202210.1126/science.abo6213Yquantum-nehra2022
Integrated EO comb span10102103104> 450 nm, > 2,000 lines
triply resonant
TFLT2025Zhang, Nature 637, 1096, 202510.1038/s41586-024-08354-4Ytflt-zhang2025
TFLN-superconductor EO transduction10−11101021.02% total
bidirectional, cryogenic
TFLN2021Xu, Nat. Commun. 12, 4453, 202110.1038/s41467-021-24809-yYtransduction-xu2021
AO modulator VπL10−310−210−110.03 V cm
unsuspended, chalcogenide hybrid
TFLN2022Wan, Light Sci. Appl. 11, 145, 202210.1038/s41377-022-00840-6Yacousto-optics-wan2022
Photodiode bandwidth on LN10102103104140 GHz
InP-LN wafer level
InP on TFLN2025-04Xie, Light Sci. Appl. 14, 172, 202510.1038/s41377-025-01821-1Yheterogeneous-xie2025
Er amplifier, fiber-to-fiber net gain110102103> 28 dB at 1531 nm, NF 5.3 dB
bidirectional 1480 nm pump
Er:LNOI2026-08Yu, Laser Photon. Rev., 202610.1002/lpor.71753Yheterogeneous-yu2026
Values as reported; highest found in a literature search to 2026-10-24 or in eo-modulator-atlas commit eb97f96; not a census. Source checked: Y = number in the published abstract; Y(arXiv), Y(conf) = in that version; atlas = atlas row with evidence locator; "inferred limit" = estimate, not a device. Platform tag outlined solid where the platform is not plain TFLN. Conditions under each value. Dataset id: row of the records dataset in the data API (– = no dataset row).
Dry-etched ring intrinsic QTFLN
29 million (1.3 dB/m)
106107108109

ion-sliced, telecom

Ring Q, CMPTFLN
Q > 108; about 0.28 dB/m
1071081091010

film thinned from bulk

Material-limited loss estimateTFLN
about 0.2 dB/m (material Q about 1.6×108)
1071081091010

annealed ion-sliced

Wafer-scale waveguide lossTFLN
0.27 dB/cm
10−210−1110

DUV, 4- and 6-inch

Measured 3 dB EO bandwidthTFLN
170 GHz (295 GHz at 6 dB)
10102103104

measured to 325 GHz; model-verified

Telecom VπL, non-resonantSiN-loaded TFLN
0.21 V cm
10−210−1110

1 mm slow-light MZM, > 110 GHz

Telecom VπL, ridge-top electrodesTFLN
0.33 V cm
10−210−1110

300 µm, 145 GHz extrapolated

Single-wavelength symbol rate with a TFLN modulatorTFLN
440 GBd PS-16-ASK
10102103104

221 GHz band-interleaved DAC

Coherent net rate, single wavelengthTFLN
1.96 Tb/s
10−1110102

dual-polarization IQ, 110 GHz

Line rate, IM/DD, any platformTFLT
768 Gb/s (536 Gb/s net)
10102103104

highest symbol rate in the paper 226 GBd

Normalized SHG, waveguideTFLN
9,600 %/W/cm2
102103104105

double-layer

SHG, microringTFLN
5,000,000 %/W
105106107108

z-cut PPLN ring

OPA gainTFLN
71 dB (118 dB/cm) unsaturated
110102103

fs pump, 4 pJ

On-chip squeezing, measuredTFLN
4.9 dB
10−1110102

> 25 THz

Integrated EO comb spanTFLT
> 450 nm, > 2,000 lines
10102103104

triply resonant

TFLN-superconductor EO transductionTFLN
1.02% total
10−1110102

bidirectional, cryogenic

AO modulator VπLTFLN
0.03 V cm
10−310−210−11

unsuspended, chalcogenide hybrid

Photodiode bandwidth on LNInP on TFLN
140 GHz
10102103104

InP-LN wafer level

Er amplifier, fiber-to-fiber net gainEr:LNOI
> 28 dB at 1531 nm, NF 5.3 dB
110102103

bidirectional 1480 nm pump

L2 Records table

Records table

Highest value found in a literature search to 2026-10-24 or in eo-modulator-atlas commit eb97f96. Platform labels: TFLN, SiN-loaded TFLN, LN on sapphire, bulk-bonded LN, Er:LNOI, InP on TFLN, TFLT.

MetricValueConditionsPlatformFirst author, venue, dateDOISource checked
Dry-etched ring intrinsic Q29 million (1.3 dB/m)ion-sliced, telecomTFLNZhu, Photon. Res. 12, A63, 202410.1364/prj.521172Y
Ring Q, CMPQ > 108; about 0.28 dB/mfilm thinned from bulkTFLNGao, Chin. Opt. Lett. 20, 011902, 202210.3788/col202220.011902Y(arXiv)
Material-limited loss estimateabout 0.2 dB/m (material Q about 1.6×108)annealed ion-slicedTFLNShams-Ansari, APL Photonics, 202210.1063/5.0095146Y (inferred limit)
Wafer-scale waveguide loss0.27 dB/cmDUV, 4- and 6-inchTFLNLuke, Opt. Express, 202010.1364/oe.401959Y
Measured 3 dB EO bandwidth170 GHz (295 GHz at 6 dB)measured to 325 GHz; model-verifiedTFLNZhang, Photon. Res. 10, 2380, 202210.1364/prj.468518Y
Telecom VπL, non-resonant0.21 V cm1 mm slow-light MZM, > 110 GHzSiN-loaded TFLNShen, Laser Photon. Rev. 19, 2401092, 202410.1002/lpor.202401092Y
Telecom VπL, ridge-top electrodes0.33 V cm300 µm, 145 GHz extrapolatedTFLNYu, Opt. Express 33, 41353, 202510.1364/oe.572384Y
Single-wavelength symbol rate with a TFLN modulator440 GBd PS-16-ASK221 GHz band-interleaved DACTFLNDeakin, OFC 2025 Th4B.7; Che, JLT 44, 1178, 202610.1364/ofc.2025.th4b.7Y
Coherent net rate, single wavelength1.96 Tb/sdual-polarization IQ, 110 GHzTFLNXu, Optica 9, 61, 202210.1364/OPTICA.449691Y
Line rate, IM/DD, any platform768 Gb/s (536 Gb/s net)highest symbol rate in the paper 226 GBdTFLTXu, OFC 2026 Th4A.210.1364/ofc.2026.th4a.2Y(conf), atlas
Normalized SHG, waveguide9,600 %/W/cm2double-layerTFLNLi, Adv. Photon. Nexus 3, 066009, 202410.1117/1.APN.3.6.066009Y
SHG, microring5,000,000 %/Wz-cut PPLN ringTFLNLu, Optica 7, 1654, 202010.1364/OPTICA.403931Y
OPA gain71 dB (118 dB/cm) unsaturatedfs pump, 4 pJTFLNJankowski, Optica 9, 273, 202210.1364/OPTICA.442550Y
CW OPO threshold19.6 µWPLACE microdiskTFLNGao, New J. Phys., 202110.1088/1367-2630/ac3d52Y
On-chip squeezing, measured4.9 dB> 25 THzTFLNNehra, Science 377, 1333, 202210.1126/science.abo6213Y
Integrated EO comb span> 450 nm, > 2,000 linestriply resonantTFLTZhang, Nature 637, 1096, 202510.1038/s41586-024-08354-4Y
TFLN-superconductor EO transduction1.02% totalbidirectional, cryogenicTFLNXu, Nat. Commun. 12, 4453, 202110.1038/s41467-021-24809-yY
AO modulator VπL0.03 V cmunsuspended, chalcogenide hybridTFLNWan, Light Sci. Appl. 11, 145, 202210.1038/s41377-022-00840-6Y
Photodiode bandwidth on LN140 GHzInP-LN wafer levelInP on TFLNXie, Light Sci. Appl. 14, 172, 202510.1038/s41377-025-01821-1Y
Er amplifier, fiber-to-fiber net gain> 28 dB at 1531 nm, NF 5.3 dBbidirectional 1480 nm pumpEr:LNOIYu, Laser Photon. Rev., 202610.1002/lpor.71753Y

L3 Provisional status

  • Records are provisional: literature coverage for 2024-2026 is incomplete. Source checked: Y = number in the published abstract; Y(arXiv), Y(conf), Y(preprint) = in that version's abstract; atlas = eo-modulator-atlas row with evidence locator.
  • Exclusions: simulated-only devices (e.g. "0.105 V cm, 235 GHz", Dadkhah 2026, simulation) are never records; extrapolated bandwidths are tagged "extrapolated".
  • Each record row is also a machine-readable row in the records dataset (data API), with DOI, date, platform label, conditions, verification code.

Sources

0 cited in 6.12

References for 6.12 are given inline: DOIs in the table above.