05 Making it
From powder to chip
L1. Every lithium niobate device starts as two white powders, lithium carbonate and niobium pentoxide, melted near 1255 °C and pulled into a single crystal on a rotating seed. The crystal is sawn into wafers, and for modern photonics a layer about 600 nm thick is peeled off a wafer, bonded to oxidized silicon, and etched into waveguides narrower than a micrometre.
| # | STEP | TOOL | T_PROC | STATUS MIX |
|---|---|---|---|---|
| 01 | Weigh and react Li2CO3 + Nb2O5 to a congruent charge | crucible charge | n/a | 1r 3d 0t 1n a1 |
| 02 | Melt the charge | Cz puller | n/a | 1r 0d 1t 1n a1 |
| 03 | Czochralski growth (seed, neck, shoulder, body, tail) | Cz puller | 55–110 h | 5r 2d 2t 0n a5 |
| 04 | Anneal and pole the boule to a single domain | poling furnace | n/a | 1r 0d 1t 2n a1 |
| 05 | Orient, flat, and slice into x-cut wafers | wire saw | n/a | 2r 0d 1t 2n a1 |
| 06 | Lap and polish (optical grade) | CMP polisher | n/a | 0r 0d 0t 1n |
| 07 | Prepare the handle wafer (Si with thermal SiO2) | oxidation furnace | n/a | 2r 0d 0t 1n |
| 08 | He+ implantation into the LN donor | ion implanter | n/a | 6r 0d 1t 1n a6 |
| 09 | Clean, plasma-activate, flip, and bond donor to handle at room temperature | wafer bonder | n/a | 4r 0d 0t 0n a4 |
| 10 | Strengthening anneal, then split at the implanted plane | anneal oven | n/a | 4r 1d 0t 0n a4 |
| 11 | Edge removal and CMP of the split surface to target thickness | CMP polisher | n/a | 3r 1d 2t 0n a2 |
| 12 | Recovery anneal of the film (wafer supplier step) | anneal oven | n/a | 0r 0d 0t 1n |
| 13 | PECVD SiO2 hard mask | PECVD | n/a | 1r 0d 0t 1n |
| 14 | Spin ARC and DUV photoresist | spin coater | n/a | 2r 0d 0t 1n |
| 15 | DUV stepper exposure, step-and-repeat | stepper | < 1 min | 4r 1d 0t 0n |
| 16 | Develop; etch ARC (Ar/O2) and SiO2 (C3F8) | RIE | n/a | 2r 0d 0t 0n |
| 17 | Ar ICP-RIE of LN (ridge) | ICP RIE | 12.5 min | 6r 0d 1t 0n a2 |
| 18 | Strip resist and SiO2 hard mask in HF | wet bench | n/a | 1r 0d 0t 1n |
| 19 | PECVD SiO2 cladding | PECVD | n/a | 1r 0d 0t 0n |
| 20 | Au traveling-wave electrodes by lift-off | e-beam evaporator | n/a | 4r 0d 0t 1n a4 |
| 21 | Dice and polish facets | dicing saw | n/a | 0r 0d 1t 1n |
| 22 | Align and attach fibers to edge couplers | fiber aligner | n/a | 1r 0d 0t 1n a1 |
| 23 | RF probe or wire bond to the electrode pads | RF probe | n/a | 0r 0d 0t 1n |
U U
U U
U U
U U
U::::::::::::::::::::::::::::::::::::::::::::::U
UUUUUUUUUUUUUUUUUUUUUUUUUUUUUUUUUUUUUUUUUUUUUUUU | Step | 01/23 | |
| Route | Ridge, DUV + SiO2 mask (Luke 2020) | |
| Equipment | crucible charge: crucible with powder charge | |
| Process time | n/a not reported | n/a |
| composition Li2O | 48.45 mol% | reportedanalog |
| Li2CO3 per kg LN | 0.25 kg/kg | derived |
| Nb2O5 per kg LN | 0.899 kg/kg | derived |
| CO2 released per kg LN | 0.149 kg/kg | derived |
| calcination temperature | n/a | n/a |
boule scale: crystal 153 mm × 110 mm to scale; 1 row = 10 mm.
Badges: reported anchor or analog paper at the locator, derived computed from other step values, template not reported, illustrative; n/a: not reported, not drawn. Status mix: reported, derived, template, n/a, and analog count. Playback 6 s per step at 1×; real process time in the HUD. Stepper fields per 100 mm wafer: 6 (derived). Keys with the viewer focused: space, arrows, shift+arrows, [ ].
Sections
| No. | Section | Figures | Process viewer steps |
|---|---|---|---|
| 5.1 | Raw materials: Li2CO3 and Nb2O5 | From rock to chip | 01 |
| 5.2 | Growing the crystal | Czochralski growth and composition | 02 03 04 |
| 5.3 | Wafers | Wafer cut and crystal axes | 05 06 |
| 5.4 | Waveguides in bulk wafers (1974 to today) | Proton-exchange depth, Ti recipes | – |
| 5.5 | Thin film: lithium niobate on insulator (LNOI) | Ion slicing: implant depth and heat steps; CMP thickness and film colour | 07 08 09 10 11 12 |
| 5.6 | Wafer sizes and suppliers (as of 2026-10-24) | – | – |
| 5.7 | Patterning: lithography, masks, and etching | Pattern writing time; Argon etching: sidewall and redeposition; Loss by fabrication route | 13r 14r 15r 16r 17r 18r 13s 14s 15s 16s 17s |
| 5.8 | Cladding and annealing | – | 19r |
| 5.9 | Electrodes | – | 20r 18s |
| 5.10 | Periodic poling of thin films | Thin-film poling field | – |
| 5.11 | Dicing, facets, packaging, fiber attach | – | 21r 19s 22 23 |
| 5.12 | The Process viewer | Process viewer | – |
Step numbers follow the ridge route (r: ridge only, s: strip only). Each viewer value has a status badge: reported, derived, or template; analog values come from a paper other than the route's anchor or from LiTaO3.