PPLN Λ = 6.82 µm · 1064 → 532 nm · 2 px/µm

5.9 Electrodes

L1 Phenomenon

Gold electrodes a few micrometres from the waveguide carry the microwave signal. They are made by lift-off: resist is patterned, metal is evaporated over it, and the resist is dissolved so that only the pattern stays.

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20Au traveling-wave electrodes by lift-offridge
18Ti/Au electrodes by DUV lift-off and e-beam evaporationstrip
                                                
                                                
                                                
                                                
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SiSiO2 (thermal)LNSiO2 claddingAu
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20/23Au traveling-wave electrodes by lift-off (ridge route)

L2 Model and data

ElectrodeValueSource; status
Ti/Au, DUV lift-off, e-beam evaporation5 nm Ti + 400 nm AuP
Au, lift-off, segmented TW electrodes800 nm Au; gap 5 µm; on 600 nm film, 350 nm etch, quartz handle; 1 µm SiO2 claddingP
Au, two lift-offs200 nm T-segments, 1.1 µm unloaded electrodes; signal width 75 µm; gap 1.8 µm; Si undercut by isotropic ICP etchP
DUV lift-off with a dielectric sacrificial layer (LiTaO3 analog)PECVD SiO2 thicker than the metal, patterned, BHF undercut, evaporate, lift offP
Cr/Au poling electrodes40 nm Cr + 30 nm Au, AZ-5214E lift-offP
Nb (superconducting)200-300 nm, e-beam evaporated at 2 × 10−8 torr, about 10 Å/s, PMMA lift-offP
Waveguide-electrode geometry (2018)w = 900 nm, rib 400 nm, slab 300 nm, gap 3.5 µm; loss about 3 dB/cm; about 5 dB/facetP

L3 Details and open points

  • Electrode-gap choice trades VπL against metal absorption; a 900 nm overcladding allowed a 1.8 µm gap without excess absorption P.
  • Thick Au lowers RF loss; segmented electrodes break the voltage-bandwidth limit (chapter 06).
  • The 2018 MZM at CMOS-compatible voltages used x-cut TFLN with Au electrodes beside etched ridges P(abs); its main-text Vπ and bandwidth were not read (abstract only).