lithium niobate / 02 Light
02 Light
Overview
| L1 Phenomenon | birefringence, Pockels effect, frequency conversion |
| L2 Model | index ellipsoid, r and d tensors, QPM, Sellmeier models with errata |
| L3 Computation | EO overlap and its normalization, coupled-mode χ(2), Lugiato-Lefever combs |
Sections
| No. | Section | L1 Phenomenon | L2 Model | L3 Computation | Headline numbers | Figures |
|---|---|---|---|---|---|---|
| 2.1 | Birefringence and the index ellipsoid | negative uniaxial; conoscope rings and isogyres; a transverse field makes the crystal biaxial | index ellipsoid, ne(θ), walk-off; Sellmeier models and the 5 mol% MgO erratum; dn/dT | exact plane-wave retardance; eigen-decomposition of the impermeability; model-to-model error budget | 2.2111 / 2.1376 derived no / ne, 1550 nm, 21 °C 1.938° derived largest walk-off, 1550 nm | conoscope under a transverse field; index models with errata; index ellipsoid and walk-off |
| 2.2 | The Pockels effect | Δn = −½n3rE; a TFLN MZM | 3m r tensor, clamped and free sets, device mapping | power-normalized FEM overlap of a real modulator cross-section | 28.8 / 30.8 pm/V P-comp r33, clamped, Kaminow 1980 / Turner 1966, 633 nm 2.90 V reported Vπ of a 9 mm TFLN MZM, Li et al. 2026 | MZM transfer curve; FEM overlap of a TFLN modulator; r tensor and index ellipsoid |
| 2.3 | Second-order nonlinear optics | SHG, SFG, DFG; coherence length; periodic poling | 3m d tensor, QPM, ηnorm, acceptance bandwidths | normalizations (%/W/cm2, %/W, absolute), overlap, coupled modes | 18.989 µm derived first-order period, SHG 1550 → 775 nm, bulk CLN 9600 %/W/cm2 reported highest normalized TFLN SHG efficiency in the held table | SHG growth along z; d tensor by cut; phase matching and acceptance; reported efficiencies |
| 2.4 | Parametric amplification and OPOs | gain from a pump; oscillation above threshold | phase-sensitive gain, resonator threshold, tuning | coupling conventions, on-chip vs fiber-coupled thresholds | ~30 µW reported OPO threshold, TFLN PPLN ring 118 dB/cm reported unsaturated parametric gain, dispersion-engineered PPLN | parametric gain; OPO threshold and output; OPO tuning |
| 2.5 | Third-order effects | optical Kerr effect, soliton combs | γ, cascaded χ(2), Lugiato-Lefever equation | Z-scan conditions, Raman, photorefraction in solitons | 9.33×10−20 m2/W P-db n2, 1064 nm, Z-scan | Kerr vs cascaded χ(2); soliton comb from the Lugiato-Lefever equation |
| 2.6 | EO combs and frequency shifters | a modulator in a ring at the FSR; photonic molecule | line slope vs βF; coupled-mode frequency shifter | modulation-index conventions, line-count thresholds | > 900 lines reported resonant EO comb, about 10 GHz spacing 28 GHz, ~90% reported frequency shift and on-chip efficiency | resonant EO comb lines; coupled-ring frequency shifter |
| 2.7 | Waveguides in TFLN | sub-micrometre LN film on oxide; tight confinement | x-cut vs z-cut, ring anisotropy, mode lattice, loss vs Q | loss mechanisms, full-vector FEM, loss measurement | 0.27 dB/cm reported wafer-scale DUV-patterned waveguides 1.3 dB/m reported dry-etched ring, Qi 29 million | rib cross-section and ring anisotropy; loss and Q records |
2.1
Birefringence and the index ellipsoid negative uniaxial; conoscope rings and isogyres; a transverse field makes the crystal biaxial 2.2111 / 2.1376 derived no / ne, 1550 nm, 21 °C 1.938° derivedlargest walk-off, 1550 nm conoscope under a transverse field; index models with errata; index ellipsoid and walk-off
2.2
The Pockels effect Δn = −½n3rE; a TFLN MZM 28.8 / 30.8 pm/V P-comp r33, clamped, Kaminow 1980 / Turner 1966, 633 nm 2.90 V reportedVπ of a 9 mm TFLN MZM, Li et al. 2026 MZM transfer curve; FEM overlap of a TFLN modulator; r tensor and index ellipsoid
2.3
Second-order nonlinear optics SHG, SFG, DFG; coherence length; periodic poling 18.989 µm derived first-order period, SHG 1550 → 775 nm, bulk CLN 9600 %/W/cm2 reportedhighest normalized TFLN SHG efficiency in the held table SHG growth along z; d tensor by cut; phase matching and acceptance; reported efficiencies
2.4
Parametric amplification and OPOs gain from a pump; oscillation above threshold ~30 µW reported OPO threshold, TFLN PPLN ring 118 dB/cm reportedunsaturated parametric gain, dispersion-engineered PPLN parametric gain; OPO threshold and output; OPO tuning
2.5
Third-order effects optical Kerr effect, soliton combs 9.33×10−20 m2/W P-db n2, 1064 nm, Z-scan Kerr vs cascaded χ(2); soliton comb from the Lugiato-Lefever equation
2.6
EO combs and frequency shifters a modulator in a ring at the FSR; photonic molecule > 900 lines reported resonant EO comb, about 10 GHz spacing 28 GHz, ~90% reportedfrequency shift and on-chip efficiency resonant EO comb lines; coupled-ring frequency shifter
2.7
Waveguides in TFLN sub-micrometre LN film on oxide; tight confinement 0.27 dB/cm reported wafer-scale DUV-patterned waveguides 1.3 dB/m reporteddry-etched ring, Qi 29 million rib cross-section and ring anisotropy; loss and Q records
Infrared light in the drawings: false color, dashed.