lithium niobate / 05 Making / 5.3
5.3 Wafers
L1 Phenomenon
A poled boule is sliced, lapped, and polished into wafers; flats on the wafer edge encode the crystal axes. The cut names the crystal axis normal to the wafer surface. Optics uses x-cut and z-cut wafers; phone filters use a Y-cut rotated by 128 degrees about X, reported in 1976 as the optimum rotated cut for surface-acoustic-wave substrates.
Wafer cut and crystal axesX-cut, Y-prop
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x (prop.) = +Y
y (in plane) = +Z
normal = +X; flat drawn at the bottom template
y (in plane) = +Z
normal = +X; flat drawn at the bottom template
| Normal n (crystal X, Y, Z) | (+1.000, +0.000, +0.000) | derived |
| Propagation x | (+0.000, +1.000, +0.000) | derived |
| In-plane y | (+0.000, +0.000, +1.000) | derived |
| Euler α, β, γ | +180.0° +90.0° +90.0° | derived |
| r_eff TE, lateral field | +30.80 pm/V | derived |
| r_eff TE, vertical field | +0.00 pm/V | derived |
| r_eff TM, lateral field | +8.60 pm/V | derived |
| r_eff TM, vertical field | +0.00 pm/V | derived |
Cut
θ = 0°: Y-cut; 90°: Z-cut; 128°: the SAW cut P(title). Diameters 76.2, 100, 150, 200 mm; 128° Y LN 350 µm (4 inch) and 500 µm (6 inch) F. r: Turner 1966, clamped, 633 nm P-comp
Cut
- Wafer normal
- (+1.000, +0.000, +0.000)
- TE, lateral field
- +30.80 pm/V
- TE, vertical field
- +0.00 pm/V
- TM, lateral field
- +8.60 pm/V
- TM, vertical field
- +0.00 pm/V
- Propagation x
- (+0.000, +1.000, +0.000)
- In-plane y
- (+0.000, +0.000, +1.000)
- Euler α, β, γ
- +180.0° +90.0° +90.0°
Disc: wafer plane (flat edge: template); green: wafer normal; dashed: hexagonal prism with c along Z. Propagation along X for the rotated cuts; θ = 0° is the Y-cut and 90° the Z-cut. r: Turner 1966, clamped, 633 nm P-comp; r_eff derived.
Process viewer stepsopen in the Process viewer
| # | STEP | ROUTE |
|---|---|---|
| 05 | Orient, flat, and slice into x-cut wafers | ridge |
| 06 | Lap and polish (optical grade) | ridge |
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Step
5/23Orient, flat, and slice into x-cut wafers (ridge route)
L2 Model and data
| Cut | Normal | Main use | Source; status |
|---|---|---|---|
| x-cut | X | TFLN modulators: TE mode and in-plane field along Z use r33 | P |
| z-cut | Z | Bulk PPLN and APE waveguides (domains inverted through the thickness); TM modes in thin film | P, P |
| y-cut | Y | Proton exchange in benzoic acid damages the y-cut surface | P(abs) |
| 128° rotated Y, X-propagating (128 Y-X) | Y rotated 128° about X | SAW filters; optimum cut reported in 1976 | P(title), V |
| 36-50° rotated Y LiTaO3 | SAW (LT, not LN) | V |
| Wafer specification | Value | Source; status |
|---|---|---|
| Diameters in production | 4 and 6 inch (one SAW-wafer maker); 8-inch LN claimed in mass production by one grower | V, V |
| Thickness, 128 Y LN | 350 µm at 4 inch, 500 µm at 6 inch | Sumitomo Metal Mining V |
| Donor thickness used for LTOI | 525 µm (LiTaO3) | P |
| Flat lengths, TTV, bow, warp, LTV, roughness | not found in a primary or standard text as of 2026-10-25 | N/A |
| Standard covering SAW wafers | IEC 62276 (LN, LT, quartz, LBO, LGS); the 2012 edition added "reduced LN/LT" terms; edition 4.0 in 2025. Numerical limits not read | S |
| Optical vs acoustic grade (shown for LiTaO3) | Acoustic grade is chemically reduced (annealed in carbon powder), optical grade is not; both congruent, same cost; optical grade had a narrower XRD rocking curve | P |
L3 Details and open points
- Flat convention: the primary-flat orientation relative to +X or -X, and the sign of +Z on the polished face, differ between vendors; each wafer's vendor drawing fixes them; the wafer-cut figure draws a template default.
- Sign of Z: +Z is the face that becomes negative on compression under IEEE 176-1987; the pyroelectric sign follows once +Z is fixed P-comp.
- Reduced ("black") LN for SAW is mentioned in the IEC scope; its reduction conditions for LN were not read.