PPLN Λ = 18.99 µm · 1550 → 775 nm · 2 px/µm

6.9 RF acoustic filters

L1 Phenomenon

A phone picks its radio bands out of the air with tiny acoustic filters; a 2018 count put more than 50 in a mid- to high-tier 4G phone (Microwave Journal, 2018-10-11). Many are surface-acoustic-wave filters on a lithium tantalate or lithium niobate crystal; the comb electrodes set the frequency. LT appears to dominate SAW filters (inference from product pages; no public share figure) inference; bulk-acoustic-wave (BAW) filters use aluminum nitride, not LN inference.

L2 Facts with sources

FactStatusSource
SAW filters are built on piezoelectric LT or LN substrates; 128-degree Y LN and 36-50-degree rotated Y LT are standard cuts; 4" and 6" waferscompany pageSumitomo Metal Mining
Shin-Etsu's piezo crystal page lists LT onlycompany pageShin-Etsu
Soitec POI (piezo-on-insulator) is offered as LT (LT6 150 mm, LT8 200 mm) and LN (LN6 150 mm)company pageSoitec
XBAR: 400 nm ZY-LN platelet, resonance about 4,800 MHz, coupling about 25%, resonance Q about 300reported[Plessky et al. 2019]
Murata states its high-frequency filters use LiNbO3company statement[Murata Manufacturing Co., Ltd.]
Filters per phone: "> 50" in mid/high-tier 4G phones, "> 70" expected with 5G (2018)trade pressMicrowave Journal, 2018-10-11
LT vs LN share of SAW filter volumeN/A: no public quantitative source found-
Interdigital transducer and SAW, top view, 14 px per µmsingle-electrode IDT, finger width λ/4
5 µmwaveguide (1550 nm)SAW, λ = 1.989 µm →
λac  1.989 µmIDT period (pitch)  1.989 µmfinger  0.497 µmv 3978.4 m/s
2.00 GHz
Cut
λ = v/f. v: free-surface SAW velocity of the cut from the partial-wave solver with the Kushibiki 1999 constants derived (solver: chapter 03). Crests drawn qualitatively; the photoelastic index change follows the strain sign.
5 µmwaveguide (1550 nm, false color)SAW, λ = 1.989 µm →
2.00 GHz
Cut
Acoustic wavelength = IDT period
 1.989 µm
Finger width
 0.497 µm
SAW velocity
3978.4 m/s
Doubling the frequency halves the finger pitch on screen (fixed 18 px per µm). Single-electrode IDT, finger width λ/4; λ = v/f with the free-surface SAW velocity of the cut from the partial-wave solver and the Kushibiki 1999 constants derived (solver: chapter 03). Crests drawn qualitatively; the photoelastic index change follows the strain sign.

L3 Gaps

  • Electromechanical coupling k2 and f*Q records for TFLN acoustic resonators are not given here; a mmWave TFLN acoustic review exists Lu 2025.

Sources

8 cited in 6.9
RefTitleLink
Kushibiki et al. 1999Accurate measurements of the acoustical physical constants of LiNbO/sub 3/ and LiTaO/sub 3/ single crystalsdoi:10.1109/58.796136
Lu 2025Recent advances in high-performance millimeter-Wave acoustic resonators and filters using thin-film lithium niobatedoi:10.1016/j.pquantelec.2025.100565
Microwave Journal, 2018-10-11Microwave Journal, 2018-10-11www.microwavejournal.com/articles/31149-sawbaw-new-market-entrants-offer-new-approaches
Murata Manufacturing Co., Ltd.Murata exhibits at OFC 2026 (news release, 2026-03-10)corporate.murata.com/en-us/newsroom/news/company/general/2026/0310
Plessky et al. 20195 GHz laterally‐excited bulk‐wave resonators (XBARs) based on thin platelets of lithium niobatedoi:10.1049/el.2018.7297
Shin-EtsuShin-Etsu Chemical, Oxide Single Crystals (LT)www.shinetsu.co.jp/en/products/electronics-materials/oxide-single-crystals
SoitecSoitec, Connect POIwww.soitec.com/en/products/poi
Sumitomo Metal MiningSumitomo Metal Mining, LT/LN product pagewww.smm.co.jp/en/business/material/products/lithium