6.2 Traveling-wave design: velocity, impedance, RF loss
L1 Phenomenon
At 100 GHz the drive signal on the chip has a wavelength of about 1.4 mm (c / (f nRF) with nRF = 2.2 derived), shorter than the electrode. The electrode is therefore a transmission line: the microwave and the light race down the chip together. If they travel at the same speed and the microwave does not fade, every slice of the electrode adds phase in step, and the modulator stays fast however long it is.
- Index mismatch
- 0.000
- Velocity limit
- none
- Loss limit (6.4 dB)
- 306.2 GHz
- RF loss at f3dB
- –
L2 Line model, limits, levers
Model
Voltage on a line with propagation constant γ = α + j ω nRF / c, load reflection ΓL = (ZL - Z0)/(ZL + Z0), source reflection ΓS = (ZS - Z0)/(ZS + Z0):
The light sees the voltage at the time it reaches z, t = t0 + ng z / c. The modulation it accumulates, normalized to the electrode length:
EO response (dB) = 20 log10 |m(f) / m(0)|, with m(0) = VS ZL / (ZS + ZL). derived from transmission-line theory; the model class is the one in Chung, Chang, Adler 1991 [Chung et al. 1991] and Alferness 1982 [Alferness 1982].
Single-effect limits (derived here from the matched-load form, ZS = ZL = Z0):
| Limit | Condition | 3 dB point |
|---|---|---|
| Velocity mismatch only (α = 0) | |sin x / x| = 1/√(2) at x = π f L |nRF - ng| / c = 1.392 | f3dB L = 0.443 c / |nRF - ng| derived |
| RF loss only (nRF = ng) | (1 - exp(-a)) / a = 1/√(2) at a = α L = 0.738 Np | total electrode RF loss at f3dB = 6.4 dB derived |
Worked numbers derived, using the Chen 2022 (c) device (capacitively loaded, nRF 2.35, ng 2.2, Z0 50.5 ohm, RF loss 2.947 dB/cm at 67 GHz, L = 10 mm) reported:
- Velocity term alone: f3dB = 0.443 c / (0.15 × 10 mm) = 88.5 GHz.
- Loss term alone, loss scaling as √(f): 6.4 dB is reached at 67 GHz × (6.4 / 2.947)2 = 317 GHz.
- Reported 3 dB bandwidth: > 67 GHz (bound) reported.
Design levers:
- Velocity. In a quasi-TEM line nRF = c √(L' C') and Z0 = √(L' / C'); adding capacitance per length (T-rail loading) raises nRF and lowers Z0 together. Of 28 TFLN/TFLT device rows that report both indices, 23 have |nRF - ng| ≤ 0.10; the others are Chen 2022 (c) (0.15), Renaud 2022 (3um-738) (0.16), Mao 2022 (a) (0.28), Lin 2026 (a) (0.50, lumped), Chen 2023 (a) (ng 4.0, approx.) derived.
- RF loss. Narrow gaps raise conductor loss; T-rail segments keep the rails wide while bringing the field close to the waveguide reported. Low-k underfill was used to reduce RF loss and reach velocity matching with a narrow gap reported.
- Impedance. A source at 50 ohm into a lower-Z0 line divides the voltage; load mismatch adds a counter-propagating wave whose contribution averages out once ω (nRF + ng) L / c >> 1.
Slow light and loaded electrodes
In a slow-light waveguide the phase from a given index change grows with the optical group index, which lowers VπL; the electrode must then slow the microwave to the same group velocity. A 1 mm SiN-loaded TFLN MZM with slow-light waveguides and capacitively loaded slow-wave electrodes reached 0.21 V cm with bandwidth > 110 GHz reported.
L3 Atlas RF columns and measurement
- Atlas RF fields: RF index, optical group index, Z0, and RF loss in power dB/cm at a stated frequency (amplitude coefficients converted). A cross-section's RF index and impedance are not the effective values of a periodically loaded line, so cross-section values do not give the loaded-line nRF or Z0.
- Measured RF loss is usually quoted at one frequency; the √(f) scaling (conductor skin effect) is a model assumption, and dielectric loss scales as f.
- Instrument roll-off, probe and cable de-embedding, and the photodiode response enter measured EO S21 and are removed by the authors with stated or unstated calibrations.
Sources
| Ref | Title | Link |
|---|---|---|
| Alferness 1982 | Waveguide Electrooptic Modulators | doi:10.1109/tmtt.1982.1131213 |
| Chung et al. 1991 | Modeling and optimization of traveling-wave LiNbO/sub 3/ interferometric modulators | doi:10.1109/3.81370 |
| Kharel et al. 2021 | Breaking voltage–bandwidth limits in integrated lithium niobate modulators using micro-structured electrodes | doi:10.1364/OPTICA.416155 |
| Liu et al. 2025 | Ultrahigh‐Efficiency Dual‐Band Thin‐Film Lithium Niobate Modulator Incorporating Low‐k Underfill for 390 Gbit s −1 PAM8 Transmission | doi:10.1002/lpor.202402053 |
| Shen et al. 2024 | Highly Efficient Slow‐Light Mach–Zehnder Modulator Achieving 0.21 V cm Efficiency with Bandwidth Surpassing 110 GHz | doi:10.1002/lpor.202401092 |